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    • 1. 发明授权
    • Substrate cleaning method
    • 基材清洗方法
    • US07678199B2
    • 2010-03-16
    • US11470353
    • 2006-09-06
    • Shogo MizotaMinami TeruomiKenji YokomizoTaira Masaki
    • Shogo MizotaMinami TeruomiKenji YokomizoTaira Masaki
    • B08B3/04
    • H01L21/02052H01L21/02057Y10S134/902
    • A method is provided for reducing the amount of film fragments discharged into a processing liquid circulation system during removal of films from wafers, thereby reducing the frequency of filter cleaning or filter replacement. The method includes exposing a wafer containing a film formed thereon in a process chamber of a substrate processing system to a processing liquid, where the wafer is not rotated or is rotated at a first speed and the processing liquid is discharged from the process chamber to a processing liquid circulation system. Subsequently, exposure of the wafer to the processing liquid is discontinued and the wafer is rotated at a second speed greater than the first speed to centrifugally remove fragments of the film from the wafer. Next, the wafer is exposed to the same or a different processing liquid and the processing liquid is discharged from the process chamber to a processing liquid drain.
    • 提供了一种减少在从晶片去除薄膜期间排出到处理液循环系统中的薄膜碎片的量的方法,从而降低了过滤器清洁或过滤器更换的频率。 该方法包括将其上形成的膜的晶片暴露于基板处理系统的处理室中的处理液体中,其中晶片不以第一速度旋转或旋转,并且处理液体从处理室排出到 处理液体循环系统。 随后,停止将晶片暴露于处理液体,并以大于第一速度的第二速度转动晶片,从晶片离心分离膜片。 接下来,将晶片暴露于相同或不同的处理液体,并且处理液体从处理室排出到处理液体排出口。
    • 2. 发明申请
    • SUBSTRATE CLEANING METHOD
    • 基板清洗方法
    • US20080053489A1
    • 2008-03-06
    • US11470353
    • 2006-09-06
    • Shogo MizotaMinami TeruomiKenji YokomizoTaira Masaki
    • Shogo MizotaMinami TeruomiKenji YokomizoTaira Masaki
    • B08B7/00
    • H01L21/02052H01L21/02057Y10S134/902
    • A method is provided for reducing the amount of film fragments discharged into a processing liquid circulation system during removal of films from wafers, thereby reducing the frequency of filter cleaning or filter placement. The method includes exposing a wafer containing a film formed thereon in a process chamber of a substrate processing system to a processing liquid, where the wafer is not rotated or is rotated at a first speed and the processing liquid is discharged from the process chamber to a processing liquid circulation system. Subsequently, exposure of the wafer to the processing liquid is discontinued and the wafer is rotated at a second speed greater than the first speed to centrifugally remove fragments of the film from the wafer. Next, the wafer is exposed to the same or a different processing liquid and the processing liquid is discharged from the process chamber to a processing liquid drain.
    • 提供了一种减少在从晶片去除薄膜期间排出到处理液循环系统中的薄膜碎片的量的方法,从而降低了过滤器清洁或过滤器放置的频率。 该方法包括将其上形成的膜的晶片暴露于基板处理系统的处理室中的处理液体中,其中晶片不以第一速度旋转或旋转,并且处理液体从处理室排出到 处理液体循环系统。 随后,停止将晶片暴露于处理液体,并以大于第一速度的第二速度转动晶片,从晶片离心分离膜片。 接下来,将晶片暴露于相同或不同的处理液体,并且处理液体从处理室排出到处理液体排出口。