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21. 发明申请

US20110061813A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20110061813A1
公开(公告)日：2011-03-17
申请号：US12883761
申请日：2010-09-16
申请人： Hachishiro Iizuka , Yuki Mochizuki , Jun Abe
发明人： Hachishiro Iizuka , Yuki Mochizuki , Jun Abe
IPC分类号： H01L21/465
CPC分类号： H01J37/32834 , H01J37/32091
摘要： A plasma processing apparatus includes a shower head that supplies a gas toward a substrate in a shower pattern through a plurality of gas discharge holes provided in a facing surface of the shower head facing a mounting table; a multiple number of gas exhaust holes provided in the facing surface of the shower head; a vertically movable ring-shaped member that is installed along a circumference of the mounting table and is configured to form, at a raised position, a processing space surrounded by the mounting table, the shower head and the ring-shaped member; a multiplicity of gas supply holes opened in an inner wall of the ring-shaped member to supply a gas into the processing space; and a plurality of gas exhaust holes opened in an inner wall of the ring-shaped member to evacuate the processing space.
摘要翻译：一种等离子体处理装置，包括：喷淋头，其通过设置在面对安装台的淋浴头的面对面上的多个气体排出孔向喷射模式的基板供给气体; 多个排气孔设置在淋浴喷头的相对面上; 沿着所述安装台的圆周安装的可垂直移动的环形构件，所述可垂直移动的环形构件被构造成在升高位置形成由所述安装台，所述淋浴喷头和所述环形构件包围的处理空间; 多个气体供给孔，其在所述环状部件的内壁上开口，向所述处理空间供给气体; 以及在所述环状构件的内壁中开口的多个排气孔，以对所述处理空间进行抽真空。

22. 发明申请

US20090314435A1 PLASMA PROCESSING UNIT 审中-公开
标题翻译：等离子体加工单元
公开(公告)号：US20090314435A1
公开(公告)日：2009-12-24
申请号：US12551869
申请日：2009-09-01
申请人： Taro IKEDA , Hachishiro Iizuka , Kaoru Yamamoto
发明人： Taro IKEDA , Hachishiro Iizuka , Kaoru Yamamoto
IPC分类号： H01L21/306
CPC分类号： H01J37/32431 , H01J2237/20
摘要： A plasma processing unit of the present invention includes: a processing chamber having a dielectric wall; and a stage provided in the processing chamber, the stage having a placement surface onto which an object to be processed is placed. An induction plasma is generated in the processing chamber via the dielectric wall. The plasma processing unit is provided with a dielectric member capable of detachably covering at least the placement surface of the stage.
摘要翻译：本发明的等离子体处理单元包括：具有电介质壁的处理室; 以及设置在所述处理室中的台，所述台具有放置所述待处理物体的放置面。通过电介质壁在处理室中产生感应等离子体。等离子体处理单元设置有能够至少可拆卸地覆盖台的放置表面的电介质构件。

23. 发明申请

US20090245971A1 COUPLING MEMBER AND PLASMA PROCESSING APPARATUS 有权
标题翻译：联轴器和等离子体加工设备
公开(公告)号：US20090245971A1
公开(公告)日：2009-10-01
申请号：US12412939
申请日：2009-03-27
申请人： Hachishiro Iizuka , Shojiro Yahata
发明人： Hachishiro Iizuka , Shojiro Yahata
IPC分类号： F16B23/00 , B23K10/00
CPC分类号： F16B35/041 , F16B33/006 , Y10S411/90
摘要： A coupling member is employed to couple components of a plasma processing apparatus which processes a substrate by using a plasma. The coupling member includes a threaded rod portion which passes through one component and is screwed and fixed to another component, a head portion which supports the one component and has a diameter larger than that of the threaded rod portion, and an elastic portion which is interposed between the threaded rod portion and the head portion, wherein the elastic portion has a larger strain to an external force than those of the threaded rod portion and the head portion.
摘要翻译：耦合构件用于耦合通过使用等离子体处理衬底的等离子体处理装置的部件。联接构件包括穿过一个部件并螺纹固定到另一部件的螺杆部分，支撑一个部件并且具有大于螺杆部分的直径的头部，以及插入在螺纹杆部分和头部之间，其中弹性部分具有比螺纹杆部分和头部部分更大的外力应变。

24. 发明申请

US20060180078A1 Gas reaction system and semiconductor processing apparatus 失效
标题翻译：气体反应系统和半导体加工装置
公开(公告)号：US20060180078A1
公开(公告)日：2006-08-17
申请号：US10565676
申请日：2004-07-23
申请人： Hachishiro Iizuka
发明人： Hachishiro Iizuka
IPC分类号： B05C5/00 , C23C14/00
CPC分类号： C23C16/45565 , C23C16/4486 , C23C16/45568
摘要： A gas reaction system is disclosed which comprises a vaporizer (230) for generating a reaction gas by vaporizing a liquid material and a reaction chamber (221A) wherein the reaction gas is reacted. The vaporizer (230) is integrally formed with a component member which defines the reaction chamber (221A). The reaction gas generated in the vaporizer (230) is directly introduced into the reaction chamber (221A). The vaporization chamber (232) of the vaporizer (230) is a space between an upper plate (230A) and a cap (230B) attached to the upper surface of the upper plate (230A). A narrow passage (233) is formed between the cap (230B) and the upper plate (230A) which passage (233) communicates with the vaporization chamber (232).
摘要翻译：公开了一种气体反应系统，其包括用于通过蒸发液体材料产生反应气体的蒸发器（230）和反应气体反应的反应室（221A）。蒸发器（230）与限定反应室（221A）的部件一体地形成。在蒸发器（230）中产生的反应气体直接引入反应室（221A）。蒸发器（230）的蒸发室（232）是上板（230A）和附接到上板（230A）的上表面的盖（230B）之间的空间。在通道（233）与蒸发室（232）连通的盖（230B）和上板（230A）之间形成窄通道（233）。

25. 发明授权

US08758550B2 Shower head and plasma processing apparatus having same 有权
标题翻译：淋浴头和等离子体处理装置
公开(公告)号：US08758550B2
公开(公告)日：2014-06-24
申请号：US12719502
申请日：2010-03-08
申请人： Hachishiro Iizuka
发明人： Hachishiro Iizuka
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32541 , H01J37/3244
摘要： A shower head is provided, in a processing chamber in which a substrate is processed, to face a mounting table for mounting the substrate thereon. The shower head includes: a facing surface that faces the mounting table to supply a gas to the substrate in a form of shower through a plurality of gas injection holes formed on the facing surface; an opposing surface provided opposite to the facing surface; a plurality of gas exhaust holes extending between the facing surface and the opposing surface to perform gas exhaust from the facing surface toward the opposing surface; and a plurality of electrodes provided on the opposing surface, an ion-confining voltage being applied to the electrodes.
摘要翻译：在处理基板的处理室中设置有一个淋浴头，以面对用于将基板安装在其上的安装台。淋浴头包括：面对安装台的面对表面，以通过形成在相对表面上的多个气体喷射孔以淋浴的形式将气体供应到基板; 与相对表面相对设置的相对表面; 多个排气孔，其在所述相对表面和所述相对表面之间延伸，以从所述相对表面朝向所述相对表面进行排气; 以及设置在相对表面上的多个电极，施加到电极的离子限制电压。

26. 发明授权

US08747609B2 Plasma processing apparatus and shower head 有权
标题翻译：等离子处理装置和淋浴头
公开(公告)号：US08747609B2
公开(公告)日：2014-06-10
申请号：US12888664
申请日：2010-09-23
申请人： Hachishiro Iizuka , Jun Abe , Yuki Mochizuki
发明人： Hachishiro Iizuka , Jun Abe , Yuki Mochizuki
IPC分类号： H01L21/3065 , C23F1/00 , C23C16/00
CPC分类号： H01J37/3244 , H01J37/3266
摘要： A plasma processing apparatus includes a shower head that is installed within a processing chamber for processing a substrate therein so as to face a mounting table for mounting the substrate thereon and supplies a gas toward the substrate in a shower pattern through a plurality of gas discharge holes provided in a facing surface of the shower head facing the mounting table; a plurality of gas exhaust holes formed through the shower head to be extended from the facing surface of the shower head to an opposite surface from the facing surface; a multiple number of rod-shaped magnet pillars standing upright in a gas exhaust space communicating with the gas exhaust holes on the side of the opposite surface; and a driving unit that varies a distance between the magnet pillars and the gas exhaust holes by moving at least a part of the magnet pillars.
摘要翻译：一种等离子体处理装置，包括安装在用于处理基板的处理室内的淋浴喷头，面对用于将基板安装在其上的安装台，并通过多个气体排出孔向喷射基板喷射气体设置在所述淋浴喷头的面向所述安装台的面对面上; 多个排气孔，其形成为穿过所述淋浴喷头，从所述喷淋头的相对表面延伸到与所述相对表面相反的表面; 多个杆状磁体柱直立放置在与相对表面侧的排气孔连通的排气空间中; 以及驱动单元，其通过移动至少一部分磁体柱来改变磁体柱和排气孔之间的距离。

27. 发明申请

US20120103523A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20120103523A1
公开(公告)日：2012-05-03
申请号：US13282665
申请日：2011-10-27
申请人： Hachishiro Iizuka
发明人： Hachishiro Iizuka
IPC分类号： C23F1/08
CPC分类号： H01J37/321 , H01J37/3211 , H01J37/3244 , H01J37/32458 , H01J37/32522
摘要： The present disclosure provides a plasma processing apparatus capable of improving uniformity of a process on a substrate surface. The plasma processing apparatus performs a process on a substrate accommodated in a processing chamber by generating inductively coupled plasma in the processing chamber. The plasma processing apparatus includes a processing chamber main body having a top opening and formed in a container shape; an upper lid, configured to cover the top opening, having a ceiling plate formed by alternately and concentrically arranging annular dielectric members and metal members, all having different diameters, and by airtightly sealing gaps between the dielectric members and the metal members; gas introduction units provided at the metal members, for supplying a processing gas into the processing chamber; and a high frequency coil provided on an upper portion of the dielectric members and provided at the outside of the processing chamber.
摘要翻译：本发明提供能够提高基板表面上的工艺的均匀性的等离子体处理装置。等离子体处理装置通过在处理室中产生电感耦合等离子体，对容纳在处理室中的基板进行处理。等离子体处理装置包括具有顶部开口并形成为容器形状的处理室主体; 上盖，构造成覆盖顶部开口，具有通过交替地并且同心地布置环形电介质构件和金属构件而形成的顶板，所述环形电介质构件和金属构件全部具有不同的直径，并且通过气密密封电介质构件和金属构件之间的间隙; 设置在金属构件上的气体导入单元，用于将处理气体供给到处理室中; 以及高频线圈，其设置在所述电介质部件的上部并设置在所述处理室的外部。

28. 发明授权

US08052364B2 Coupling member and plasma processing apparatus 有权
标题翻译：耦合构件和等离子体处理装置
公开(公告)号：US08052364B2
公开(公告)日：2011-11-08
申请号：US12412939
申请日：2009-03-27
申请人： Hachishiro Iizuka , Shojiro Yahata
发明人： Hachishiro Iizuka , Shojiro Yahata
IPC分类号： F16B25/10
CPC分类号： F16B35/041 , F16B33/006 , Y10S411/90
摘要： A coupling member is employed to couple components of a plasma processing apparatus which processes a substrate by using a plasma. The coupling member includes a threaded rod portion which passes through one component and is screwed and fixed to another component, a head portion which supports the one component and has a diameter larger than that of the threaded rod portion, and an elastic portion which is interposed between the threaded rod portion and the head portion, wherein the elastic portion has a larger strain to an external force than those of the threaded rod portion and the head portion.
摘要翻译：耦合构件用于耦合通过使用等离子体处理衬底的等离子体处理装置的部件。联接构件包括穿过一个部件并螺纹固定到另一部件的螺杆部分，支撑一个部件并且具有大于螺杆部分的直径的头部，以及插入在螺纹杆部分和头部之间，其中弹性部分具有比螺纹杆部分和头部部分更大的外力应变。

29. 发明申请

US20100307686A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工设备
公开(公告)号：US20100307686A1
公开(公告)日：2010-12-09
申请号：US12793859
申请日：2010-06-04
申请人： Hachishiro Iizuka , Yuki Mochizuki
发明人： Hachishiro Iizuka , Yuki Mochizuki
IPC分类号： C23F1/08 , C23C16/44
CPC分类号： H01L21/67115 , H01L21/67103
摘要： Provided is a substrate processing apparatus capable of effectively heating each component without generating an abnormal electric discharge. The substrate processing apparatus 10 includes: a depressurizable processing chamber 11; a susceptor 12 provided within the processing chamber 11; a shower head 27 provided at a ceiling portion of the processing chamber 11 so as to face the susceptor 12; a focus ring 24 provided at an outer peripheral portion of a top surface of the susceptor 12; and a ring-shaped infrared radiant heater 26 provided in a vicinity of the focus ring 24. The heater 26 includes an infrared radiator 26a and a quartz ring 26b for sealing the infrared radiator 26a therein.
摘要翻译：提供一种能够有效地加热各部件而不产生异常放电的基板处理装置。基板处理装置10包括：可减压处理室11; 设置在处理室11内的基座12; 设置在处理室11的顶部以便与基座12相对的淋浴头27; 设置在基座12的上表面的外周部的聚焦环24; 以及设置在聚焦环24附近的环状红外辐射加热器26.加热器26包括用于将红外辐射体26a密封在其中的红外辐射体26a和石英环26b。

30. 发明授权

US07666260B2 Vaporizer and semiconductor processing apparatus 失效
标题翻译：汽化器和半导体加工设备
公开(公告)号：US07666260B2
公开(公告)日：2010-02-23
申请号：US10556355
申请日：2004-05-11
申请人： Hachishiro Iizuka
发明人： Hachishiro Iizuka
IPC分类号： C23C16/00
CPC分类号： C23C16/4486
摘要： A vaporizer includes a vaporizing chamber configured to vaporize a liquid material and thereby form a gas material. A spray portion is configured to spray the liquid material in the vaporizing chamber. A delivery part is configured to deliver the gas material from the vaporizing chamber to a gas outlet. A heating portion is configured to heat the vaporizer. The delivery part includes a filter member covering the gas outlet and configured to allow the gas material to pass therethrough. A shield plate is disposed to cover the filter member on a side farther from the gas outlet.
摘要翻译：蒸发器包括被配置为蒸发液体材料并由此形成气体材料的蒸发室。喷射部分被配置为将液体材料喷射到蒸发室中。输送部分构造成将气体材料从蒸发室输送到气体出口。加热部分构造成加热蒸发器。输送部分包括覆盖气体出口并构造成允许气体材料通过的过滤器构件。屏蔽板设置成在距离气体出口更远的一侧覆盖过滤构件。

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