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1. 发明授权

US08758511B2 Film forming apparatus and vaporizer 失效
标题翻译：成膜装置和蒸发器
公开(公告)号：US08758511B2
公开(公告)日：2014-06-24
申请号：US11660091
申请日：2005-08-12
申请人： Hachishiro Iizuka , Akira Yasumuro , Koichiro Kimura , Norihiko Tsuji
发明人： Hachishiro Iizuka , Akira Yasumuro , Koichiro Kimura , Norihiko Tsuji
IPC分类号： C23C16/448 , C23C16/455 , C23C16/00 , C23C16/44 , C23C16/458
CPC分类号： C23C16/4402 , C23C16/4401 , C23C16/4486 , C23C16/45561 , C23C16/4585
摘要： A film forming apparatus including a raw material supplying section for supplying a raw material of a liquid or a gas-liquid mixture, a raw material vaporizing section for vaporizing the raw material to form a raw material gas, and a film forming section for conducting a film forming treatment using the formed raw material gas, and a filter on the transport path for the raw material gas from the raw material vaporizing section to the film forming section. An outer edge of the filter is pressed to the inner surface of the transport path over the whole perimeter thereof by a cyclic supporting member, which is less prone to be deformed by a loading in the pressing direction than the outer edge, and is fixed to the inner surface of the transport path in a compressed state between the inner surface of the transport path and the supporting member.
摘要翻译：一种成膜装置，包括用于供给液体或气液混合物的原料的原料供给部，用于蒸发原料以形成原料气体的原料蒸发部，以及用于导入使用所形成的原料气体的成膜处理，以及从原料蒸发部到成膜部的原料气体的输送路径上的过滤器。过滤器的外边缘通过循环支撑构件在其整个周边上被压靠在输送路径的内表面上，循环支撑构件通过沿着挤压方向的加载不如外边缘而变形，并被固定到传送路径的内表面处于压缩状态，在传送路径的内表面和支撑构件之间。

2. 发明授权

US08674607B2 Plasma processing apparatus and processing gas supply structure thereof 有权
标题翻译：等离子体处理装置及其处理气体供应结构
公开(公告)号：US08674607B2
公开(公告)日：2014-03-18
申请号：US13115193
申请日：2011-05-25
申请人： Hachishiro Iizuka
发明人： Hachishiro Iizuka
IPC分类号： H01J7/24
CPC分类号： H01J37/32449 , H01J37/321 , H01J37/3244 , H01J2237/3343 , Y10T137/8593
摘要： There is provided a plasma processing apparatus for generating inductively coupled plasma in a processing chamber and performing a process on a substrate accommodated in the processing chamber. The plasma processing apparatus includes an upper cover installed to cover a top opening of the processing chamber and having a dielectric window; a high frequency coil installed above the dielectric window at an outer side of the processing chamber; a gas supply mechanism supported by the upper cover and installed under the dielectric window. Here, the gas supply mechanism includes a layered body including plates having through holes. Further, the gas supply mechanism is configured to supply a processing gas into the processing chamber in a horizontal direction via groove-shaped gas channels installed between the plates or between the plate and the dielectric window, and end portions of the groove-shaped gas channels are opened to edges of the through holes.
摘要翻译：提供了一种用于在处理室中产生感应耦合等离子体并在容纳在处理室中的基板上进行处理的等离子体处理装置。等离子体处理装置包括安装成覆盖处理室的顶部开口并具有电介质窗口的上盖; 高频线圈，设置在所述处理室的外侧的所述电介质窗口的上方; 由上盖支撑并安装在电介质窗下的气体供给机构。这里，气体供给机构包括具有通孔的板的层叠体。此外，气体供给机构构成为通过安装在板之间或板与介电窗口之间的槽状气体通道，在水平方向上将处理气体供给到处理室，并且槽状气体通道的端部通向通孔的边缘。

3. 发明授权

US08366828B2 Shower head and substrate processing apparatus 有权
标题翻译：淋浴头和基材加工设备
公开(公告)号：US08366828B2
公开(公告)日：2013-02-05
申请号：US12406339
申请日：2009-03-18
申请人： Hachishiro Iizuka
发明人： Hachishiro Iizuka
IPC分类号： C23C16/455 , C23C16/52 , C23F16/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45574 , H01J37/3244 , H01J37/32449
摘要： A shower head is provided in a processing chamber for processing a substrate therein to face a mounting table for mounting thereon the substrate and formed of a laminated body in which a plurality of plate-shaped members are laminated. The shower head serves to supply one or more gases in a shower shape toward the substrate. The shower head includes a first gas supply unit for supplying a first gas toward the substrate through first gas injection openings provided in the laminated body, a second gas supply unit for supplying a second gas through second gas injection openings provided in the laminated body and a plurality of gas exhaust holes, formed through the laminated body, for exhausting a gas through a portion of the laminated body, the portion facing the mounting table.
摘要翻译：淋浴头设置在处理室中，用于在其中处理基板以面对安装台，用于安装在基板上，并由多个板状构件层叠的层叠体形成。喷头用于向衬底供应一种或多种淋浴形式的气体。淋浴头包括：第一气体供给单元，用于通过设置在层叠体中的第一气体注入口向基板供给第一气体;第二气体供给单元，其通过设置在层叠体中的第二气体注入开口供给第二气体;第二气体供给单元，通过层叠体形成的多个排气孔，用于通过层叠体的一部分排出气体，面向安装台的部分。

4. 发明申请

US20120090783A1 PLASMA PROCESSING APPARATUS AND PROCESSING GAS SUPPLY STRUCTURE THEREOF 有权
标题翻译：等离子体加工设备及其加工气体供应结构
公开(公告)号：US20120090783A1
公开(公告)日：2012-04-19
申请号：US13271399
申请日：2011-10-12
申请人： Hachishiro Iizuka
发明人： Hachishiro Iizuka
IPC分类号： H01L21/3065 , C23C16/50
CPC分类号： H01J37/321 , H01J37/3244 , Y10T137/8593
摘要： There is provided a plasma processing apparatus for performing a process on a substrate by generating inductively coupled plasma. The plasma processing apparatus includes an upper lid, provided to cover a top opening of the processing chamber, having a dielectric window; multiple gas inlets provided at the upper lid; a high frequency coil positioned above the dielectric window at an outside of the processing chamber; and a gas supply device supported by the upper lid and provided under the dielectric window. Here, the gas supply device includes a single sheet of plate having through holes, multiple groove-shaped gas paths are formed between the plate and the dielectric window, end portions of the groove-shaped gas paths are opened to edges of the through holes and communicate with the gas inlets, and the gas supply device is configured to supply the processing gas into the processing chamber via the through holes.
摘要翻译：提供了一种等离子体处理装置，用于通过产生电感耦合等离子体在衬底上进行处理。等离子体处理装置包括设置成覆盖处理室的顶部开口的上盖，其具有电介质窗口; 设置在上盖的多个气体入口; 位于所述处理室外侧的所述电介质窗口上方的高频线圈; 以及由上盖支撑并设置在电介质窗下的气体供给装置。这里，气体供给装置包括具有通孔的单片板，在板和电介质窗之间形成有多个槽状气体通路，槽状气体通路的端部向通孔的边缘开口，与气体入口连通，气体供给装置经由通孔将处理气体供给到处理室。

5. 发明授权

US08152925B2 Baffle plate and substrate processing apparatus 有权
标题翻译：挡板和基板处理装置
公开(公告)号：US08152925B2
公开(公告)日：2012-04-10
申请号：US12483545
申请日：2009-06-12
申请人： Hachishiro Iizuka
发明人： Hachishiro Iizuka
IPC分类号： C23C16/455 , C23C16/52 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01J37/32623 , H01J37/32633
摘要： A baffle plate, provided in a processing chamber for processing a substrate therein such that the baffle plate is disposed around a mounting table for mounting the substrate thereon, has a plurality of gas exhaust holes, through which a gas is exhausted from the processing chamber. The baffle plate has a stacked structure including a plurality of plate-shaped members. The baffle plate includes a pressure adjustment gas supply passageway to supply a pressure adjustment gas for adjusting a pressure in the processing chamber.
摘要翻译：一种挡板，设置在处理室中，用于在其中处理基板，使得挡板设置在用于将基板安装在其上的安装台周围，具有多个排气孔，气体从处理室排出。挡板具有包括多个板状构件的堆叠结构。挡板包括压力调节气体供应通道，以供应用于调节处理室中的压力的压力调节气体。

6. 发明授权

US07413611B2 Gas reaction system and semiconductor processing apparatus 失效
标题翻译：气体反应系统和半导体加工装置
公开(公告)号：US07413611B2
公开(公告)日：2008-08-19
申请号：US10565676
申请日：2004-07-23
申请人： Hachishiro Iizuka
发明人： Hachishiro Iizuka
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/4486 , C23C16/45568
摘要： A gas reaction system is disclosed which comprises a vaporizer (230) for generating a reaction gas by vaporizing a liquid material and a reaction chamber (221A) wherein the reaction gas is reacted. The vaporizer (230) is integrally formed with a component member which defines the reaction chamber (221A). The reaction gas generated in the vaporizer (230) is directly introduced into the reaction chamber (221A). The vaporization chamber (232) of the vaporizer (230) is a space between an upper plate (230A) and a cap (230B) attached to the upper surface of the upper plate (230A). A narrow passage (233) is formed between the cap (230B) and the upper plate (230A) which passage (233) communicates with the vaporization chamber (232).
摘要翻译：公开了一种气体反应系统，其包括用于通过蒸发液体材料产生反应气体的蒸发器（230）和反应气体反应的反应室（221A）。蒸发器（230）与限定反应室（221A）的部件一体地形成。在蒸发器（230）中产生的反应气体直接引入反应室（221A）。蒸发器（230）的蒸发室（232）是上板（230A）和附接到上板（230A）的上表面的盖（230B）之间的空间。在通道（233）与蒸发室（232）连通的盖（230B）和上板（230A）之间形成窄通道（233）。

7. 发明申请

US20070101940A1 Vaporizer and semiconductor processing apparatus 失效
标题翻译：汽化器和半导体加工设备
公开(公告)号：US20070101940A1
公开(公告)日：2007-05-10
申请号：US10556355
申请日：2004-05-11
申请人： Hachishiro Iizuka
发明人： Hachishiro Iizuka
IPC分类号： C23C16/00
CPC分类号： C23C16/4486
摘要： A vaporizer includes a vaporizing chamber (110) configured to vaporize a liquid material and thereby form a gas material. A spray portion (120) is configured to spray the liquid material in the vaporizing chamber. A delivery part (130) is configured to deliver the gas material from the vaporizing chamber to a gas outlet (131SO). A heating portion (112, 132) is configured to heat the vaporizer. The delivery part (130) includes a filter member (113) covering the gas outlet and configured to allow the gas material to pass therethrough. A shield plate (134) is disposed to cover the filter member on a side farther from the gas outlet.
摘要翻译：蒸发器包括被配置为蒸发液体材料并由此形成气体材料的蒸发室（110）。喷射部分（120）构造成喷射蒸发室中的液体材料。输送部分（130）构造成将气体材料从蒸发室输送到气体出口（131S0）。加热部分（112,132）构造成加热蒸发器。输送部分（130）包括覆盖气体出口并构造成允许气体材料通过的过滤器部件（113）。屏蔽板（134）设置成在离气体出口更远的一侧覆盖过滤构件。

8. 发明授权

US08852387B2 Plasma processing apparatus and shower head 有权
标题翻译：等离子处理装置和淋浴头
公开(公告)号：US08852387B2
公开(公告)日：2014-10-07
申请号：US13036369
申请日：2011-02-28
申请人： Hachishiro Iizuka , Jun Abe , Akihiro Yokota , Takeshi Ohse
发明人： Hachishiro Iizuka , Jun Abe , Akihiro Yokota , Takeshi Ohse
IPC分类号： H01L21/3065 , C23C16/455 , C23F1/08 , H05H1/24
CPC分类号： C23F1/08 , C23C16/455 , H01L21/3065 , H05H1/24
摘要： There is provided a plasma processing apparatus including: a shower head installed within a processing chamber for processing a substrate and facing a mounting table for mounting the substrate; a multiple number of gas exhaust holes formed through the shower head to be extended from a facing surface of the shower head to an opposite surface to the facing surface; a multiple number of openable and closable trigger holes formed through the shower head to be extended from the facing surface of the shower head to the opposite surface, and configured to allow plasma leakage from the facing surface to the opposite surface; and a partition wall installed in a gas exhaust space provided on the side of the opposite surface of the shower head to divide the gas exhaust space into a multiple number of regions, each region communicating with one or more trigger holes.
摘要翻译：提供了一种等离子体处理装置，包括：淋浴喷头，安装在处理室内，用于处理基板并面对用于安装基板的安装台; 多个排气孔形成在淋浴喷头上，从喷淋头的相对表面延伸到相对表面; 多个可打开和可闭合的触发孔，其通过淋浴喷头形成，从喷淋头的相对表面延伸到相对表面，并且构造成允许等离子体从面对表面泄漏到相对表面; 以及安装在设置在所述淋浴喷头的相对表面侧的排气空间中的分隔壁，以将所述排气空间分成多个区域，每个区域与一个或多个触发孔连通。

9. 发明授权

US08608903B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08608903B2
公开(公告)日：2013-12-17
申请号：US12913135
申请日：2010-10-27
申请人： Yohei Yamazawa , Chishio Koshimizu , Masashi Saito , Kazuki Denpoh , Jun Yamawaku , Hachishiro Iizuka
发明人： Yohei Yamazawa , Chishio Koshimizu , Masashi Saito , Kazuki Denpoh , Jun Yamawaku , Hachishiro Iizuka
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/321 , H01L21/31116 , H01L21/31122 , H01L21/31138
摘要： A plasma processing apparatus includes: a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit, provided in the chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a processing gas to the chamber; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the chamber. The apparatus further includes a correction coil, provided at a position outside the chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution in the chamber; and an antenna-coil distance control unit for controlling a distance between the RF antenna and the correction coil while supporting the correction coil substantially in parallel with the RF antenna.
摘要翻译：一种等离子体处理装置，包括：包括电介质窗的处理室; 设置在电介质窗外部的线圈状RF天线; 基板支撑单元，设置在所述室中，用于在其上安装目标基板; 处理气体供应单元，用于将处理气体供应到所述室; 以及RF电源单元，用于向RF天线提供RF功率，以通过腔室中的感应耦合产生处理气体的等离子体。该装置还包括校正线圈，其设置在室外的位置处，其中校正线圈将通过电磁感应与RF天线耦合，用于控制腔室中的等离子体密度分布; 以及天线线圈距离控制单元，用于在支撑基本上与RF天线并联的校正线圈的同时控制RF天线和校正线圈之间的距离。

10. 发明申请

US20110291568A1 PLASMA PROCESSING APPARATUS AND PROCESSING GAS SUPPLY STRUCTURE THEREOF 有权
标题翻译：等离子体加工设备及其加工气体供应结构
公开(公告)号：US20110291568A1
公开(公告)日：2011-12-01
申请号：US13115193
申请日：2011-05-25
申请人： Hachishiro Iizuka
发明人： Hachishiro Iizuka
IPC分类号： H05H1/24 , F15D1/00
CPC分类号： H01J37/32449 , H01J37/321 , H01J37/3244 , H01J2237/3343 , Y10T137/8593
摘要： There is provided a plasma processing apparatus for generating inductively coupled plasma in a processing chamber and performing a process on a substrate accommodated in the processing chamber. The plasma processing apparatus includes an upper cover installed to cover a top opening of the processing chamber and having a dielectric window; a high frequency coil installed above the dielectric window at an outer side of the processing chamber; a gas supply mechanism supported by the upper cover and installed under the dielectric window. Here, the gas supply mechanism includes a layered body including plates having through holes. Further, the gas supply mechanism is configured to supply a processing gas into the processing chamber in a horizontal direction via groove-shaped gas channels installed between the plates or between the plate and the dielectric window, and end portions of the groove-shaped gas channels are opened to edges of the through holes.
摘要翻译：提供了一种用于在处理室中产生感应耦合等离子体并在容纳在处理室中的基板上进行处理的等离子体处理装置。等离子体处理装置包括安装成覆盖处理室的顶部开口并具有电介质窗口的上盖; 高频线圈，设置在所述处理室的外侧的所述电介质窗口的上方; 由上盖支撑并安装在电介质窗下的气体供给机构。这里，气体供给机构包括具有通孔的板的层叠体。此外，气体供给机构构成为通过安装在板之间或板与介电窗口之间的槽状气体通道，在水平方向上将处理气体供给到处理室，并且槽状气体通道的端部通向通孔的边缘。

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