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    • 21. 发明申请
    • THERMAL WAFER PROCESSOR
    • 热处理器
    • US20080006617A1
    • 2008-01-10
    • US11428742
    • 2006-07-05
    • Randy A. HarrisGregory J. WilsonPaul R. McHugh
    • Randy A. HarrisGregory J. WilsonPaul R. McHugh
    • F27B5/14
    • F27B17/0025H01L21/67109H01L21/6719
    • A thermal processor may include a cooling jacket positionable around a process chamber within a process vessel or jar. A heater can move into a position substantially between the process chamber vessel and the cooling jacket. A holder having multiple workpiece holding positions is provided for holding a batch or workpieces or wafers. The process chamber vessel is moveable to a position where it substantially encloses the holder, so that wafers in the holder may be processed in a controlled environment. A cooling shroud may be provided to absorb heat from the heater before or after thermal processing. The thermal processor is compact and thermally shielded, and may be used in an automated processing system having other types of processors.
    • 热处理器可以包括可在处理容器或罐内的处理室周围定位的冷却套。 加热器可以进入基本上处理室容器和冷却套之间的位置。 提供具有多个工件保持位置的保持器,用于保持批次或工件或晶片。 处理室容器可移动到其基本上包围保持器的位置,使得保持器中的晶片可以在受控环境中进行处理。 可以提供冷却罩以在热处理之前或之后从加热器吸收热量。 热处理器是紧凑的和热屏蔽的,并且可以用于具有其他类型的处理器的自动处理系统中。
    • 25. 发明申请
    • WORKPIECE WETTING AND CLEANING
    • 工作湿润和清洁
    • US20120052204A1
    • 2012-03-01
    • US12873002
    • 2010-08-31
    • Bryan PuchKyle M. HansonMarvin BerntPaul R. McHughGregory J. Wilson
    • Bryan PuchKyle M. HansonMarvin BerntPaul R. McHughGregory J. Wilson
    • C23C16/56
    • H01L21/6719H01L21/67057H01L21/67126
    • In a workpiece processor, a head is moveable onto a bowl to form a process chamber. A workpiece can be cleaned in the processor by immersing the workpiece into a liquid bath in the bowl and then boiling the liquid. Vacuum may be applied to the chamber to reduce the pressure within the chamber, thereby reducing the boiling temperature of the liquid and allowing processing at lower temperatures. In a separate method for prewetting a workpiece, a humid gas is provided into the process chamber and condenses on the workpiece. In another separate method for wetting a workpiece, liquid water is provided into the bowl, with the workpiece above the liquid water. Water vapor is created in the process chamber by applying vacuum to the process chamber. The vapor wets the workpiece. The workpiece is then further wetted by submerging the workpiece into the liquid water.
    • 在工件处理器中,头可移动到碗上以形成处理室。 工件可以通过将工件浸入碗中的液体浴中,然后煮沸液体而在处理器中进行清洁。 真空可以施加到室以减小室内的压力,从而降低液体的沸腾温度并允许在较低温度下进行加工。 在用于预润湿工件的单独方法中,将湿气提供到处理室中并在工件上冷凝。 在用于润湿工件的另一种分开的方法中,液体水被提供到碗中,工件在液态水上方。 通过对处理室施加真空,在处理室中产生水蒸汽。 蒸汽润湿工件。 然后通过将工件浸入液体水中来进一步润湿工件。
    • 26. 发明申请
    • APPARATUS AND METHODS FOR ELECTROCHEMICAL PROCESSING OF MICROFEATURE WAFERS
    • 微电子蒸汽电化学处理装置及方法
    • US20110042224A1
    • 2011-02-24
    • US12917997
    • 2010-11-02
    • Paul R. McHughGregory J. WilsonDaniel J. Woodruff
    • Paul R. McHughGregory J. WilsonDaniel J. Woodruff
    • H01L21/02C25D5/02
    • C25D7/12C25D7/123C25D17/001C25D17/10C25F3/30
    • Apparatus and methods for electrochemically processing microfeature wafers. The apparatus can have a vessel including a processing zone in which a microfeature wafer is positioned for electrochemical processing. The apparatus further includes at least one counter electrode in the vessel that can operate as an anode or a cathode depending upon the particular plating or electropolishing application. The apparatus further includes a supplementary electrode and a supplementary virtual electrode. The supplementary electrode is configured to operate independently from the counter electrode in the vessel, and it can be a thief electrode and/or a de-plating electrode depending upon the type of process. The supplementary electrode can further be used as another counter electrode during a portion of a plating cycle or polishing cycle. The supplementary virtual electrode is located in the processing zone, and it is configured to counteract an electric field offset relative to the wafer associated with an offset between the wafer and the counter electrode in the vessel when the wafer is in the processing zone.
    • 用于电化学处理微片的装置和方法。 该装置可以具有容器,该容器包括处理区域,微处理区域定位用于电化学处理。 该装置还包括容器中的至少一个对电极,其可以根据具体的电镀或电解抛光应用而作为阳极或阴极操作。 该装置还包括辅助电极和辅助虚拟电极。 辅助电极被配置为独立于容器中的对电极操作,并且其可以是根据工艺类型的小电极和/或去镀电极。 在电镀循环或抛光循环的一部分期间,辅助电极可以进一步用作另一个对电极。 辅助虚拟电极位于处理区域中,并且其被配置为当晶片处于处理区域时,相对于与晶片和对置电极之间的偏移相关联的晶片抵消相对于晶片的电场偏移。
    • 27. 发明授权
    • Apparatus and methods for electrochemical processing of microfeature wafers
    • 微晶片电化学处理的装置和方法
    • US07842173B2
    • 2010-11-30
    • US11699768
    • 2007-01-29
    • Paul R. McHughGregory J. WilsonDaniel J. Woodruff
    • Paul R. McHughGregory J. WilsonDaniel J. Woodruff
    • C25B9/00
    • C25D7/12C25D7/123C25D17/001C25D17/10C25F3/30
    • Apparatus and methods for electrochemically processing microfeature wafers. The apparatus can have a vessel including a processing zone in which a microfeature wafer is positioned for electrochemical processing. The apparatus further includes at least one counter electrode in the vessel that can operate as an anode or a cathode depending upon the particular plating or electropolishing application. The apparatus further includes a supplementary electrode and a supplementary virtual electrode. The supplementary electrode is configured to operate independently from the counter electrode in the vessel, and it can be a thief electrode and/or a de-plating electrode depending upon the type of process. The supplementary electrode can further be used as another counter electrode during a portion of a plating cycle or polishing cycle. The supplementary virtual electrode is located in the processing zone, and it is configured to counteract an electric field offset relative to the wafer associated with an offset between the wafer and the counter electrode in the vessel when the wafer is in the processing zone.
    • 用于电化学处理微片的装置和方法。 该装置可以具有容器,该容器包括处理区域,微处理区域定位用于电化学处理。 该装置还包括容器中的至少一个对电极,其可以根据具体的电镀或电解抛光应用而作为阳极或阴极操作。 该装置还包括辅助电极和辅助虚拟电极。 辅助电极被配置为独立于容器中的对电极操作,并且其可以是根据工艺类型的小电极和/或去镀电极。 在电镀循环或抛光循环的一部分期间,辅助电极可以进一步用作另一个对电极。 辅助虚拟电极位于处理区域中,并且其被配置为当晶片处于处理区域时,相对于与晶片和对置电极之间的偏移相关联的晶片抵消相对于晶片的电场偏移。
    • 30. 发明授权
    • Thermal wafer processor
    • 热晶片处理器
    • US07371998B2
    • 2008-05-13
    • US11428742
    • 2006-07-05
    • Randy A. HarrisGregory J. WilsonPaul R. McHugh
    • Randy A. HarrisGregory J. WilsonPaul R. McHugh
    • F27B5/04F27B5/14F27B11/02F27D3/12F27D1/12
    • F27B17/0025H01L21/67109H01L21/6719
    • A thermal processor may include a cooling jacket positionable around a process chamber within a process vessel or jar. A heater can move into a position substantially between the process chamber vessel and the cooling jacket. A holder having multiple workpiece holding positions is provided for holding a batch or workpieces or wafers. The process chamber vessel is moveable to a position where it substantially encloses the holder, so that wafers in the holder may be processed in a controlled environment. A cooling shroud may be provided to absorb heat from the heater before or after thermal processing. The thermal processor is compact and thermally shielded, and may be used in an automated processing system having other types of processors.
    • 热处理器可以包括可在处理容器或罐内的处理室周围定位的冷却套。 加热器可以进入基本上处理室容器和冷却套之间的位置。 提供具有多个工件保持位置的保持器,用于保持批次或工件或晶片。 处理室容器可移动到其基本上包围保持器的位置,使得保持器中的晶片可以在受控环境中进行处理。 可以提供冷却罩以在热处理之前或之后从加热器吸收热量。 热处理器是紧凑的和热屏蔽的,并且可以用于具有其他类型的处理器的自动处理系统中。