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    • 22. 发明申请
    • PHOTOSENSITIVE INSULATION RESIN COMPOSITION AND CURED PRODUCT THEREOF
    • 光敏绝缘树脂组合物及其固化产品
    • US20090239080A1
    • 2009-09-24
    • US12439006
    • 2007-07-23
    • Atsushi ItoHirofumi GotoHirofumi Sasaki
    • Atsushi ItoHirofumi GotoHirofumi Sasaki
    • G03F7/004B32B27/06
    • G03F7/0385C08F212/08C08F212/14Y10T428/31504C08F220/10
    • An object of the present invention is to provide a cured product which is excellent in characteristics such as an electric insulation property, a heat impact resistance, an adhesive property and the like and to provide a photosensitive insulation resin composition from which the above cured product can be obtained and which is suited to uses such as an interlayer insulation film, a surface protecting layer and the like in semiconductor elements. The photosensitive insulation resin composition according to the present invention is characterized by comprising (A) a copolymer comprising 10 to 99 mole % of a constitutional unit (A1) represented by the following Formula (1) and 90 to 1 mole % of a constitutional unit (A2) represented by the following Formula (2) (provided that the total of all constitutional units constituting the above copolymer (A) is 100 mole %): (wherein R1 represents an alkyl group having 1 to 4 carbon atoms, an alkoxy group or an aryl group; R2 represents a hydrogen atom or methyl; m is an integer of 1 to 3, and n is an integer of 0 to 3; and m+n≦5; R3 represents an alkyl group having 1 to 4 carbon atoms, an alkoxy group or an aryl group; R4 represents a hydrogen atom or methyl; and k is an integer of 0 to 3), (B) a compound (B1) having an oxetanyl group, (C) a photosensitive acid generator, (D) a solvent and (F) cross-linked fine particles.
    • 本发明的目的是提供一种电绝缘性,耐热冲击性,粘合性等特性优异的固化物,并提供一种感光绝缘树脂组合物,其中上述固化产物可由 可以得到并适用于半导体元件中的层间绝缘膜,表面保护层等的用途。 本发明的感光性绝缘性树脂组合物的特征在于,包含(A)由下述通式(1)表示的结构单元(A1)和10〜99摩尔%的由下式(1)表示的结构单元(A1)和90〜1摩尔% (A2)(条件是构成上述共聚物(A)的全部构成单元的总量为100摩尔%):(其中,R1表示碳原子数1〜4的烷基,烷氧基 或芳基; R 2表示氢原子或甲基; m表示1〜3的整数,n表示0〜3的整数,m + n <= 5,R 3表示碳原子数1〜4的烷基 原子,烷氧基或芳基; R4表示氢原子或甲基; k表示0〜3的整数),(B)具有氧杂环丁烷基的化合物(B1),(C)感光性酸发生剂, (D)溶剂和(F)交联的细颗粒。
    • 27. 发明申请
    • Electronic device and method of making same
    • 电子设备及其制作方法
    • US20060205225A1
    • 2006-09-14
    • US11360394
    • 2006-02-24
    • Kenichi TochiMasahiro MiyazakiTakao NoguchiHiroshi YamazakiKen UnnoHirofumi Sasaki
    • Kenichi TochiMasahiro MiyazakiTakao NoguchiHiroshi YamazakiKen UnnoHirofumi Sasaki
    • H01L21/302H01L21/461
    • H01L41/332Y10T29/42Y10T29/43Y10T29/435Y10T29/49126Y10T29/49155
    • The present invention provides an electronic device with improved characteristics and a method of making the electronic device. In a method of making an electronic device (piezoelectric device) 74 according to the present invention, an outer edge R1 of a piezoelectric film 52A formed on an electrode film 46A of a laminate 60 is located inside an outer edge R2 of the electrode film 46A. For this reason, in removal of a monocrystalline Si substrate 14 from a multilayer board 61, where an etching solution permeates between polyimide 72 and laminate 60, the etching solution circumvents the electrode film 46A before it reaches the piezoelectric film 52A. Namely, a route A of the etching solution to the piezoelectric film 52A is significantly extended by the electrode film 46A. In the method of making the electronic device 74, therefore, the etching solution is less likely to reach the piezoelectric film 52A. It significantly suppresses a situation of dissolution of the piezoelectric film 52A and realizes improvement in characteristics of the piezoelectric device 74 made.
    • 本发明提供了具有改进特性的电子设备和制造该电子设备的方法。 在制造根据本发明的电子设备(压电器件)74的方法中,形成在层压体60的电极膜46A上的压电膜52A的外边缘R 1位于 电极膜46A。为此,为了从多层基板61去除单晶硅基板14,其中蚀刻溶液渗透在聚酰亚胺72和层压体60之间,蚀刻溶液在其到达压电体之前绕过电极膜46A 也就是说,通过电极膜46A,使压电膜52A的蚀刻溶液的路线A显着延长。因此,在制造电子器件74的方法中,蚀刻溶液不太可能达到 压电膜52A。显着抑制压电膜52A的溶解的情况,实现了制造的压电元件74的特性的提高。
    • 30. 发明授权
    • Semiconductor integrated circuit device
    • 半导体集成电路器件
    • US06693334B2
    • 2004-02-17
    • US10201284
    • 2002-07-24
    • Hirofumi Sasaki
    • Hirofumi Sasaki
    • H01L2976
    • H01L27/118H01L21/76838H01L23/5225H01L23/552H01L2924/0002H01L2924/00
    • A shield portion 5 has such a multi-layer wiring construction comprised of three wiring layers as to correspond to a macro cell and also via contacts formed with a predetermined spacing therebetween and is supplied with a predetermined potential (for example, a ground potential) but not connected to a power wiring or a ground wiring in the macro cell. This configuration makes it possible to hold the wiring layers of the shield portion at roughly the same potential. Accordingly, noise originated from the wiring layer as a signal line is blocked in propagation by the shield portion and so does not affect a signal flowing through a wiring layer.
    • 屏蔽部分5具有这样的多层布线结构,其由三个布线层构成,对应于宏单元,并且还通过以预定间隔形成的触点,并且被提供有预定电位(例如,地电位),但是 未连接到宏单元中的电源接线或接地线。 这种构造使得可以将屏蔽部分的布线层保持在大致相同的电位。 因此,作为信号线的布线层产生的噪声在屏蔽部分的传播中被阻挡,因此不影响流过布线层的信号。