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21. 发明申请

US20100093157A1 METHOD FOR PRODUCING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR CRYSTAL 有权
标题翻译：用于生产III族氮化物化合物半导体晶体的方法
公开(公告)号：US20100093157A1
公开(公告)日：2010-04-15
申请号：US12448207
申请日：2007-12-10
申请人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： H01L21/20
CPC分类号： C30B19/02 , C30B9/10 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02625
摘要： A GaN single crystal 20 is grown on a crystal growth surface of a seed crystal (GaN layer 13) through the flux method in a nitrogen (N2) atmosphere at 3.7 MPa and 870° C. employing a flux mixture including Ga, Na, and Li at about 870° C. Since the back surface of the template 10 is R-plane of the sapphire substrate 11, the template 10 is readily corroded or dissolved in the flux mixture from the back surface thereof. Therefore, the template 10 is gradually dissolved or corroded from the back surface thereof, resulting in separation from the semiconductor or dissolution in the flux. When the GaN single crystal 20 is grown to a sufficient thickness, for example, about 500 μm or more, the temperature of the crucible is maintained at 850° C. to 880° C., whereby the entirety of the sapphire substrate 11 is dissolved in the flux mixture.
摘要翻译：在氮（N 2）气氛中，在3.7MPa和870℃下，通过助熔剂法在GaN晶体生长面（GaN层13）上生长GaN单晶20，使用包含Ga，Na和 Li在约870℃。由于模板10的背面是蓝宝石衬底11的R平面，所以模板10容易被腐蚀或溶解在焊剂混合物的背面。因此，模板10从其背面逐渐溶解或腐蚀，导致与半导体的分离或焊剂的溶解。当GaN单晶20生长至足够的厚度，例如约500μm或更大时，坩埚的温度保持在850℃至880℃，从而整个蓝宝石衬底11溶解在助焊剂混合物中。

22. 发明申请

US20100059717A1 GaN CRYSTAL PRODUCING METHOD, GaN CRYSTAL, GaN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND GaN CRYSTAL PRODUCING APPARATUS 有权
标题翻译： GaN晶体生产方法，GaN晶体，GaN晶体衬底，半导体器件和GaN晶体生产设备
公开(公告)号：US20100059717A1
公开(公告)日：2010-03-11
申请号：US12514836
申请日：2007-11-14
申请人： Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Masashi Yoshimura , Minoru Kawahara , Yasuo Kitaoka , Masanori Morishita
发明人： Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Masashi Yoshimura , Minoru Kawahara , Yasuo Kitaoka , Masanori Morishita
IPC分类号： C30B9/00 , C01B21/06 , H01B1/24
CPC分类号： C30B29/406 , C30B19/02 , Y10T117/1024
摘要： A method for producing a GaN crystal capable of achieving at least one of the prevention of nucleation and the growth of a high-quality non-polar surface is provided. The production method of the present invention is a method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, including an adjustment step of adjusting the carbon content of the melt, and a reaction step of causing the gallium and nitrogen to react with each other. According to the production method of the present invention, nucleation can be prevented, and as shown in FIG. 4, a non-polar surface can be grown.
摘要翻译：提供一种能够实现防止成核和高质量非极性表面生长中的至少一种的GaN晶体的制造方法。本发明的制造方法是在至少含有碱金属和镓的熔融物中制造GaN晶体的方法，包括调整熔融物的碳含量的调整工序，以及使镓和氮的反应工序互相反应。根据本发明的制造方法，能够防止成核，如图1所示，如图4所示，可以生长非极性表面。

23. 发明授权

US07580651B2 Image forming apparatus and method of controlling energy saving mode 失效
标题翻译：图像形成装置及节能模式的控制方法
公开(公告)号：US07580651B2
公开(公告)日：2009-08-25
申请号：US11129338
申请日：2005-05-16
申请人： Yoshiyuki Namizuka , Hiroshi Hosaka , Keiichiroh Katoh , Mitsuhisa Kanaya , Yuji Takahashi , Fumio Kawamura , Jun Doi , Masayoshi Miyamoto , Tetsuya Kawaguchi , Hiroshi Soga
发明人： Yoshiyuki Namizuka , Hiroshi Hosaka , Keiichiroh Katoh , Mitsuhisa Kanaya , Yuji Takahashi , Fumio Kawamura , Jun Doi , Masayoshi Miyamoto , Tetsuya Kawaguchi , Hiroshi Soga
IPC分类号： G03G21/00 , G03G15/00
CPC分类号： G06F1/32 , H04N1/00342 , H04N1/00885 , H04N1/00888 , H04N1/00896 , H04N1/00928 , H04N2201/0094
摘要： A method of controlling an energy saving mode in an image forming apparatus having hardware resources used in an image forming process and programs for performing the image forming process includes a step of letting the image forming apparatus enter into an energy saving mode in a standby state in which the image forming apparatus is not used, and a step of recovering at least part of functions of the image forming apparatus in response to setting of a data carrier in the image forming apparatus, said data carrier being in a possession of an operator.
摘要翻译：一种在图像形成处理中使用的具有硬件资源的图像形成装置中的节能模式的控制方法和进行图像形成处理的程序的方法包括以下步骤：使图像形成装置进入待机状态的节能模式不使用图像形成装置的步骤，以及响应于图像形成装置中的数据载体的设置而恢复图像形成装置的功能的至少一部分的步骤，所述数据载体由操作者拥有。

24. 发明申请

US20090205561A1 METHOD FOR PRODUCING SILICON CARBIDE (SiC) CRYSTAL AND SILICON CARBIDE (SiC) CRYSTAL OBTAINED BY THE SAME 审中-公开
标题翻译：生产碳化硅（SiC）晶体和碳化硅（SiC）晶体的方法
公开(公告)号：US20090205561A1
公开(公告)日：2009-08-20
申请号：US12305313
申请日：2007-06-26
申请人： Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara , Yasuo Kitaoka
发明人： Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara , Yasuo Kitaoka
IPC分类号： C30B9/10
CPC分类号： C30B29/36 , C01B32/956 , C30B9/10
摘要： A production method is provided that enables to produce a large-sized bulk silicon carbide (SiC) crystal of high quality at low cost. A large-sized bulk silicon carbide (SiC) crystal of high quality can be obtained at a lower temperature by reacting silicon (Si) and carbon (C) produced from a lithium carbide such as dilithium acetylide (Li2C2) with each other in an alkali metal melt and thereby producing or growing a silicon carbide (SiC) crystal. FIG. 17 shows a high-resolution TEM (HR-TEM) image of the resultant 2H—SiC crystal. A preferable lithium carbide is dilithium acetylide (Li2C2). A preferable alkali metal melt is a melt of lithium alone.
摘要翻译：提供一种能够以低成本制造高质量的大尺寸体积碳化硅（SiC）晶体的制造方法。通过使硅（Si）与碳化锂（Li 2 C 2）等碳化锂制成的碳（C）在碱中相互反应，可以在较低的温度下获得高质量的大尺寸体积碳化硅（SiC）金属熔化，从而生产或生长碳化硅（SiC）晶体。图。图17示出了所得2H-SiC晶体的高分辨率TEM（HR-TEM）图像。优选的碳化锂是二乙炔锂（Li2C2）。优选的碱金属熔体是单独的锂的熔体。

25. 发明申请

US20090169444A1 Apparatus for Producing Group III Nitride Based Compound Semiconductor 审中-公开
标题翻译：用于生产基于III族氮化物的化合物半导体的装置
公开(公告)号：US20090169444A1
公开(公告)日：2009-07-02
申请号：US12225716
申请日：2007-04-05
申请人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： B01J19/00
CPC分类号： C30B9/00 , C30B29/403
摘要： An object of the invention is to prevent, in the flux method, diffusion of substances that constitute the atmosphere of the outer vessel into the reactor.The apparatus for producing a group III nitride based compound semiconductor, the apparatus including a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, and an outer vessel for accommodating the reactor and the heating apparatus, characterized in that diffusion of substances that constitute the atmosphere of the outer vessel into the reactor is prevented.
摘要翻译：本发明的目的是在助焊剂方法中防止构成外容器气氛的物质扩散到反应器中。用于制造III族氮化物基化合物半导体的装置，该装置包括在熔融状态下保持III族金属和不同于III族金属的金属的反应器，用于加热反应器的加热装置和用于容纳反应器和加热装置，其特征在于防止构成外部容器的气体的物质扩散到反应器中。

26. 发明申请

US20090095212A1 Method for manufacturing single crystal of nitride 有权
标题翻译：氮化物单晶制造方法
公开(公告)号：US20090095212A1
公开(公告)日：2009-04-16
申请号：US12284470
申请日：2008-09-22
申请人： Mikiya Ichimura , Katsuhiro Imai , Chikashi Ihara , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Mikiya Ichimura , Katsuhiro Imai , Chikashi Ihara , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B7/00
CPC分类号： C30B9/00 , C30B29/403 , C30B29/406
摘要： A seed crystal 9 is immersed in a melt 10 containing a flux and a single crystal material in a growth vessel 7 to produce a nitride single crystal 8 on the seed crystal 9. A difference (TS−TB) of temperatures at a gas-liquid interface of the melt (TS) and at the lowermost part of the melt (TB) is set to 1° C. or larger and 8° C. or lower. Preferably, the substrate of seed crystal is vertically placed.
摘要翻译：将晶种9浸入生长容器7中含有助熔剂和单晶材料的熔体10中，以在晶种9上产生氮化物单晶8.气液中的温度差（TS-TB）熔体（TS）和熔体（TB）的最下部的界面设定为1℃以上8℃以下。优选地，将晶种的衬底垂直放置。

27. 发明授权

US07507292B2 Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared thereby 失效
标题翻译：由此制备III族元素氮化物单晶和III族元素氮化物透明单晶的方法
公开(公告)号：US07507292B2
公开(公告)日：2009-03-24
申请号：US10522488
申请日：2003-06-30
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Kunimichi Omae , Tomoya Iwahashi , Masanori Morishita
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Kunimichi Omae , Tomoya Iwahashi , Masanori Morishita
IPC分类号： C30B11/06
CPC分类号： C30B19/02 , C30B9/10 , C30B9/12 , C30B29/403
摘要： A method for producing a Group III element nitride single crystal, which comprises reacting at least one Group III element selected from the group consisting of gallium(Ga), aluminum(Al) and indium(In) with nitrogen(N) in a mixed flux of sodium(Na) and at least one of an alkali metal (except Na) and an alkaline earth metal. The method allows the production, with a good yield, of the single crystal of a group III element nitride which is transparent, is reduced in the density of dislocation, has a bulk form, and is large. In particular, a gallium nitride single crystal produced by the method has high quality and takes a large and transparent bulk form, and thus has a high practical value.
摘要翻译：一种III族元素氮化物单晶的制造方法，其特征在于，在混合助熔剂中使至少一种选自镓（Ga），铝（Al）和铟（In）的III族元素与氮（N）的钠（Na）和至少一种碱金属（除了Na）和碱土金属之外。该方法允许以良好的产率生产透明的III族元素氮化物的单晶，其位错密度降低，具有散装形式，并且大。特别地，通过该方法制造的氮化镓单晶具有高质量并且具有大而透明的散装形式，因此具有很高的实用价值。

28. 发明申请

US20080223286A1 Method for producing a semiconductor crystal 有权
标题翻译：半导体晶体的制造方法
公开(公告)号：US20080223286A1
公开(公告)日：2008-09-18
申请号：US12073178
申请日：2008-02-29
申请人： Seiji Nagai , Shiro Yamazaki , Takayuki Sato , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Seiji Nagai , Shiro Yamazaki , Takayuki Sato , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B23/00
CPC分类号： C30B29/403 , C30B9/00 , C30B9/10
摘要： Objects of the invention are to further enhance crystallinity and crystallinity uniformity of a semiconductor crystal produced through the flux method, and to effectively enhance the production yield of the semiconductor crystal. The c-axis of a seed crystal including a GaN single-crystal layer is aligned in a horizontal direction (y-axis direction), one a-axis of the seed crystal is aligned in the vertical direction, and one m-axis is aligned in the x-axis direction. Thus, three contact points at which a supporting tool contacts the seed crystal are present on m-plane. The supporting tool has two supporting members, which extend in the vertical direction. One supporting member has an end part, which is inclined at 30° with respect to the horizontal plane α. The reasons for supporting a seed crystal at m-plane thereof are that m-plane exhibits a crystal growth rate, which is lower than that of a-plane, and that desired crystal growth on c-plane is not inhibited. Actually, a plurality of seed crystals and supporting tools are periodically placed along the y-axis direction.
摘要翻译：本发明的目的是进一步提高通过助焊剂法生产的半导体晶体的结晶度和结晶度均匀性，并有效提高半导体晶体的制造成品率。包括GaN单晶层的晶种的c轴在水平方向（y轴方向）上排列，晶种的一个a轴在垂直方向上排列，并且一个m轴对齐在x轴方向。因此，在m平面上存在支撑工具与晶种接触的三个接触点。支撑工具具有在垂直方向上延伸的两个支撑构件。一个支撑构件具有相对于水平面α倾斜30°的端部。在m面支撑晶种的原因在于，m面的晶体生长速度低于a面的晶体生长速度，c面上的期望的晶体生长没有被抑制。实际上，沿着y轴方向周期性地放置多个晶种和支撑工具。

29. 发明授权

US07419545B2 Method for producing silicon carbide (SiC) single crystal and silicon carbide (SiC) single crystal obtained by such method 失效
标题翻译：通过这种方法制备碳化硅（SiC）单晶和碳化硅（SiC）单晶的方法
公开(公告)号：US07419545B2
公开(公告)日：2008-09-02
申请号：US10599035
申请日：2005-12-26
申请人： Yasuo Kitaoka , Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara
发明人： Yasuo Kitaoka , Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara
IPC分类号： C30B15/20
CPC分类号： C30B29/36 , C30B9/00 , C30B9/10 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： The present invention provides a producing method with which large silicon carbide (SiC) single crystal can be produced at low cost. Silicon carbide single crystal is produced or grown by dissolving and reacting silicon (Si) and carbon (C) in an alkali metal flux. The alkali metal preferably is lithium (Li). With this method, silicon carbide single crystal can be produced even under low-temperature conditions of 1500° C. or lower, for example. The photograph of FIG. 3B is an example of a silicon carbide single crystal obtained by the method of the present invention.
摘要翻译：本发明提供可以以低成本制造大型碳化硅（SiC）单晶的制造方法。通过使硅（Si）和碳（C）在碱金属助熔剂中溶解和反应来生产或生长碳化硅单晶。碱金属优选为锂（Li）。通过该方法，即使在例如1500℃以下的低温条件下也可以制造碳化硅单晶。图的照片图3B是通过本发明的方法获得的碳化硅单晶的实例。

30. 发明授权

US07381268B2 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride 有权
公开(公告)号：US07381268B2
公开(公告)日：2008-06-03
申请号：US10587223
申请日：2005-04-27
申请人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Hidekazu Umeda , Yasuhito Takahashi
发明人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Hidekazu Umeda , Yasuhito Takahashi
IPC分类号： C30B35/00
CPC分类号： C30B29/403 , C30B9/10 , C30B29/406 , C30B35/00 , Y10T117/1064 , Y10T117/1096
摘要： A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material (131) and gas containing nitrogen are introduced into a reactor vessel (120), to which heat is applied by a heater (110), and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device (180) to the reactor vessel (120) through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel (102) through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel (120) without passing through the pressure-resistant vessel (102), the mixture of impurities attached to the pressure-resistant vessel (102) and the like into the site of the crystal growth can be prevented. Further, since the gas flows through the reactor vessel (120), there is no aggregation of an evaporating alkali metal, etc., at the gas inlet or the like, and such an alkali metal does not flow into the gas supplying device (180). As a result, the quality of Group III nitride crystals obtained can be improved.

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