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1. 发明申请

US20070221122A1 Method for Producing Silicon Carbide (Sic) Single Crystal and Silicon Carbide (Sic) Single Crystal Obtained By Such Method 失效
标题翻译：通过这种方法获得的碳化硅（Sic）单晶和碳化硅（Sic）单晶的生产方法
公开(公告)号：US20070221122A1
公开(公告)日：2007-09-27
申请号：US10599035
申请日：2005-12-26
申请人： Yasuo Kitaoka , Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara
发明人： Yasuo Kitaoka , Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara
IPC分类号： C30B29/36 , C30B21/06 , C30B19/00
CPC分类号： C30B29/36 , C30B9/00 , C30B9/10 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： The present invention provides a producing method with which large silicon carbide (SiC) single crystal can be produced at low cost. Silicon carbide single crystal is produced or grown by dissolving and reacting silicon (Si) and carbon (C) in an alkali metal flux. The alkali metal preferably is lithium (Li). With this method, silicon carbide single crystal can be produced even under low-temperature conditions of 1500° C. or lower, for example. The photograph of FIG. 3B is an example of a silicon carbide single crystal obtained by the method of the present invention.
摘要翻译：本发明提供可以以低成本制造大型碳化硅（SiC）单晶的制造方法。通过使硅（Si）和碳（C）在碱金属助熔剂中溶解和反应来生产或生长碳化硅单晶。碱金属优选为锂（Li）。通过该方法，即使在例如1500℃以下的低温条件下也可以制造碳化硅单晶。图的照片图3B是通过本发明的方法获得的碳化硅单晶的实例。

2. 发明授权

US08187507B2 GaN crystal producing method, GaN crystal, GaN crystal substrate, semiconductor device and GaN crystal producing apparatus 有权
标题翻译： GaN晶体制造方法，GaN晶体，GaN晶体衬底，半导体器件和GaN晶体制造装置
公开(公告)号：US08187507B2
公开(公告)日：2012-05-29
申请号：US12514836
申请日：2007-11-14
申请人： Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Masashi Yoshimura , Minoru Kawahara , Yasuo Kitaoka , Masanori Morishita
发明人： Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Masashi Yoshimura , Minoru Kawahara , Yasuo Kitaoka , Masanori Morishita
IPC分类号： H01B1/06 , C01G15/00
CPC分类号： C30B29/406 , C30B19/02 , Y10T117/1024
摘要： A method for producing a GaN crystal capable of achieving at least one of the prevention of nucleation and the growth of a high-quality non-polar surface is provided. The production method of the present invention is a method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, including an adjustment step of adjusting the carbon content of the melt, and a reaction step of causing the gallium and nitrogen to react with each other. According to the production method of the present invention, nucleation can be prevented, and as shown in FIG. 4, a non-polar surface can be grown.
摘要翻译：提供一种能够实现防止成核和高质量非极性表面生长中的至少一种的GaN晶体的制造方法。本发明的制造方法是在至少含有碱金属和镓的熔融物中制造GaN晶体的方法，包括调整熔融物的碳含量的调整工序，以及使镓和氮的反应工序互相反应。根据本发明的制造方法，能够防止成核，如图1所示，如图4所示，可以生长非极性表面。

3. 发明申请

US20100059717A1 GaN CRYSTAL PRODUCING METHOD, GaN CRYSTAL, GaN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND GaN CRYSTAL PRODUCING APPARATUS 有权
标题翻译： GaN晶体生产方法，GaN晶体，GaN晶体衬底，半导体器件和GaN晶体生产设备
公开(公告)号：US20100059717A1
公开(公告)日：2010-03-11
申请号：US12514836
申请日：2007-11-14
申请人： Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Masashi Yoshimura , Minoru Kawahara , Yasuo Kitaoka , Masanori Morishita
发明人： Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Masashi Yoshimura , Minoru Kawahara , Yasuo Kitaoka , Masanori Morishita
IPC分类号： C30B9/00 , C01B21/06 , H01B1/24
CPC分类号： C30B29/406 , C30B19/02 , Y10T117/1024
摘要： A method for producing a GaN crystal capable of achieving at least one of the prevention of nucleation and the growth of a high-quality non-polar surface is provided. The production method of the present invention is a method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, including an adjustment step of adjusting the carbon content of the melt, and a reaction step of causing the gallium and nitrogen to react with each other. According to the production method of the present invention, nucleation can be prevented, and as shown in FIG. 4, a non-polar surface can be grown.
摘要翻译：提供一种能够实现防止成核和高质量非极性表面生长中的至少一种的GaN晶体的制造方法。本发明的制造方法是在至少含有碱金属和镓的熔融物中制造GaN晶体的方法，包括调整熔融物的碳含量的调整工序，以及使镓和氮的反应工序互相反应。根据本发明的制造方法，能够防止成核，如图1所示，如图4所示，可以生长非极性表面。

4. 发明申请

US20090205561A1 METHOD FOR PRODUCING SILICON CARBIDE (SiC) CRYSTAL AND SILICON CARBIDE (SiC) CRYSTAL OBTAINED BY THE SAME 审中-公开
标题翻译：生产碳化硅（SiC）晶体和碳化硅（SiC）晶体的方法
公开(公告)号：US20090205561A1
公开(公告)日：2009-08-20
申请号：US12305313
申请日：2007-06-26
申请人： Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara , Yasuo Kitaoka
发明人： Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara , Yasuo Kitaoka
IPC分类号： C30B9/10
CPC分类号： C30B29/36 , C01B32/956 , C30B9/10
摘要： A production method is provided that enables to produce a large-sized bulk silicon carbide (SiC) crystal of high quality at low cost. A large-sized bulk silicon carbide (SiC) crystal of high quality can be obtained at a lower temperature by reacting silicon (Si) and carbon (C) produced from a lithium carbide such as dilithium acetylide (Li2C2) with each other in an alkali metal melt and thereby producing or growing a silicon carbide (SiC) crystal. FIG. 17 shows a high-resolution TEM (HR-TEM) image of the resultant 2H—SiC crystal. A preferable lithium carbide is dilithium acetylide (Li2C2). A preferable alkali metal melt is a melt of lithium alone.
摘要翻译：提供一种能够以低成本制造高质量的大尺寸体积碳化硅（SiC）晶体的制造方法。通过使硅（Si）与碳化锂（Li 2 C 2）等碳化锂制成的碳（C）在碱中相互反应，可以在较低的温度下获得高质量的大尺寸体积碳化硅（SiC）金属熔化，从而生产或生长碳化硅（SiC）晶体。图。图17示出了所得2H-SiC晶体的高分辨率TEM（HR-TEM）图像。优选的碳化锂是二乙炔锂（Li2C2）。优选的碱金属熔体是单独的锂的熔体。

5. 发明授权

US07419545B2 Method for producing silicon carbide (SiC) single crystal and silicon carbide (SiC) single crystal obtained by such method 失效
标题翻译：通过这种方法制备碳化硅（SiC）单晶和碳化硅（SiC）单晶的方法
公开(公告)号：US07419545B2
公开(公告)日：2008-09-02
申请号：US10599035
申请日：2005-12-26
申请人： Yasuo Kitaoka , Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara
发明人： Yasuo Kitaoka , Yusuke Mori , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara
IPC分类号： C30B15/20
CPC分类号： C30B29/36 , C30B9/00 , C30B9/10 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： The present invention provides a producing method with which large silicon carbide (SiC) single crystal can be produced at low cost. Silicon carbide single crystal is produced or grown by dissolving and reacting silicon (Si) and carbon (C) in an alkali metal flux. The alkali metal preferably is lithium (Li). With this method, silicon carbide single crystal can be produced even under low-temperature conditions of 1500° C. or lower, for example. The photograph of FIG. 3B is an example of a silicon carbide single crystal obtained by the method of the present invention.
摘要翻译：本发明提供可以以低成本制造大型碳化硅（SiC）单晶的制造方法。通过使硅（Si）和碳（C）在碱金属助熔剂中溶解和反应来生产或生长碳化硅单晶。碱金属优选为锂（Li）。通过该方法，即使在例如1500℃以下的低温条件下也可以制造碳化硅单晶。图的照片图3B是通过本发明的方法获得的碳化硅单晶的实例。

6. 发明申请

US20080011224A1 METHOD FOR PRODUCING HEXAGONAL BORON NITRIDE SINGLE CRYSTAL AND HEXAGONAL BORON NITRIDE SINGLE CRYSTAL 有权
标题翻译：生产六角形硼酸单晶和六面体硼砂单晶的方法
公开(公告)号：US20080011224A1
公开(公告)日：2008-01-17
申请号：US11837557
申请日：2007-08-13
申请人： Makoto Iwai , Katsuhiro Imai , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara , Hiroaki Isobe
发明人： Makoto Iwai , Katsuhiro Imai , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara , Hiroaki Isobe
IPC分类号： C30B29/38 , C30B1/00 , C30B23/00
CPC分类号： C30B29/403 , C30B9/00 , C30B9/12
摘要： An object of the present invention is to provide a novel method of growing hexagonal boron nitride single crystal. It is found that hexagonal boron nitride single crystal is grown in calcium nitride flux by heating, or heating and then slowly cooling, boron nitride and calcium series material in atmosphere containing nitrogen. Bulk of hexagonal boron nitride single crystal can thereby successfully be grown.
摘要翻译：本发明的目的是提供一种生长六方氮化硼单晶的新方法。发现六方氮化硼单晶通过在含氮气氛中加热或加热然后缓慢冷却氮化硼和钙系列材料而在氮化钙焊剂中生长。从而能够成功生长六方晶系氮化硼单晶体。

7. 发明授权

US07815733B2 Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal 有权
标题翻译：生产六方氮化硼单晶和六方氮化硼单晶的方法
公开(公告)号：US07815733B2
公开(公告)日：2010-10-19
申请号：US11837557
申请日：2007-08-13
申请人： Makoto Iwai , Katsuhiro Imai , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara , Hiroaki Isobe
发明人： Makoto Iwai , Katsuhiro Imai , Takatomo Sasaki , Fumio Kawamura , Minoru Kawahara , Hiroaki Isobe
IPC分类号： C30B11/00 , C30B28/12
CPC分类号： C30B29/403 , C30B9/00 , C30B9/12
摘要： A method of growing hexagonal boron nitride single crystal is provided. Hexagonal boron nitride single crystal is grown in calcium nitride flux by heating, or heating and then slowly cooling, boron nitride and a calcium series material in an atmosphere containing nitrogen. Bulk hexagonal boron nitride single crystal can thereby successfully be grown.
摘要翻译：提供了生长六方氮化硼单晶的方法。六方氮化硼单晶通过在含氮气氛中加热或加热然后缓慢冷却氮化硼和钙系列材料而在氮化钙焊剂中生长。从而可以成功地生长大块六方氮化硼单晶。

8. 发明申请

US20080008642A1 Process For Producing Aluminum Nitride Crystal And Aluminum Nitride Crystal Obtained Thereby 审中-公开
标题翻译：由此获得的氮化铝结晶和氮化铝晶体的制造方法
公开(公告)号：US20080008642A1
公开(公告)日：2008-01-10
申请号：US11661013
申请日：2005-08-24
申请人： Yusuke Mori , Takatamo Sasaki , Fumio Kawamura , Yoshimura Masashi , Minoru Kawahara , Hiroaki Isobe
发明人： Yusuke Mori , Takatamo Sasaki , Fumio Kawamura , Yoshimura Masashi , Minoru Kawahara , Hiroaki Isobe
IPC分类号： C01B21/072 , C30B29/38 , C30B9/10
CPC分类号： C30B29/403 , C30B9/00 , C30B9/10
摘要： The present invention provides a method for producing aluminum nitride crystals under mild pressure and temperature conditions. In the production method of aluminum nitride crystals, aluminum nitride crystals are formed and grown in the presence of nitrogen-containing gas by allowing aluminum and the nitrogen to react with each other in a flux containing the following component (A) and component (B), or a flux containing the following component (B). (A) At least one element selected from the group consisting of the alkali metal and the alkaline-earth metal. (B) At least one element selected from the group consisting of tin (Sn), gallium (Ga), indium (In), bismuth (Bi) and mercury (Hg).
摘要翻译：本发明提供了在温和的压力和温度条件下制备氮化铝晶体的方法。在氮化铝晶体的制造方法中，通过使含有以下成分（A）和成分（B）的助熔剂中的铝和氮彼此反应，在含氮气体的存在下，形成氮化铝晶体，，或含有以下组分（B）的助熔剂。（A）选自由碱金属和碱土金属组成的组中的至少一种元素。（B）选自锡（Sn），镓（Ga），铟（In），铋（Bi）和汞（Hg）中的至少一种元素。

9. 发明授权

US08588042B2 Recording-and-reproducing apparatus and content-managing method 有权
标题翻译：记录再现装置和内容管理方法
公开(公告)号：US08588042B2
公开(公告)日：2013-11-19
申请号：US13018544
申请日：2011-02-01
申请人： Satoshi Katsuo , Yuka Yamamoto , Minoru Kawahara , Hisao Tanaka , Noboru Oya , Tsutomu Shimosato , Motohiro Terao
发明人： Satoshi Katsuo , Yuka Yamamoto , Minoru Kawahara , Hisao Tanaka , Noboru Oya , Tsutomu Shimosato , Motohiro Terao
IPC分类号： G11B7/085
CPC分类号： G11B27/105 , G11B27/034 , G11B27/329 , G11B2220/61
摘要： A recording-and-reproducing apparatus for managing content data recorded on a removable recording medium includes: a device configured to acquire reproduction information required for reproducing the content data; a device configured to generate a first management file for individually managing the content data; a device configured to register control information for the content data in a second management file collectively managing the content data. Further, the apparatus includes a device configured to read out the control information in the second management file recorded on the recording medium; a memory in which the control information of the second management file read out by the read-out device is expanded; a device configured to compare the control information in the second management file expanded in the memory and the content data recorded on the recording medium; and a device configured to update the control information in the second management file expanded in the memory.
摘要翻译：用于管理记录在可移动记录介质上的内容数据的记录和再现装置包括：被配置为获取再现内容数据所需的再现信息的设备; 被配置为生成用于单独管理所述内容数据的第一管理文件的设备; 被配置为在共同管理内容数据的第二管理文件中注册用于内容数据的控制信息的设备。此外，该装置包括被配置为读出记录在记录介质上的第二管理文件中的控制信息的装置; 其中由读出装置读出的第二管理文件的控制信息被扩展的存储器; 配置为比较在存储器中扩展的第二管理文件中的控制信息和记录在记录介质上的内容数据的装置; 以及被配置为更新在存储器中扩展的第二管理文件中的控制信息的设备。

10. 发明授权

US07950354B2 Oil-cooled engine 有权
标题翻译：油冷发动机
公开(公告)号：US07950354B2
公开(公告)日：2011-05-31
申请号：US12206025
申请日：2008-09-08
申请人： Minoru Kawahara , Shingo Izumi , Takahiro Kajihara
发明人： Minoru Kawahara , Shingo Izumi , Takahiro Kajihara
IPC分类号： F01P3/00 , F01M1/02
CPC分类号： F01P3/02 , F01P2003/006
摘要： An oil-release space (18) is formed along a lower side portion (17) of a cylinder lateral and peripheral wall (3) below an oil-cooling jacket (4). A reinforcing plate (19) spans between the lower side portion (17) of the cylinder lateral and peripheral wall (3) and a bottom wall (10) of a push-rod chamber (8) below the oil-release space (18). The oil-release space (18) is communicated with an oil outlet (20) of an oil-return passage (7). Engine oil that has passed through the oil-return passage (7) is released from the oil outlet (20) into the oil-release space (18). The engine oil released into the oil-release space (18) is guided by an upper surface of the reinforcing plate (19) to drop from a led-out end (25) on a rear side of the reinforcing plate (19) onto a rear side space (24).
摘要翻译：沿着油冷套（4）下方的气缸侧壁和周壁（3）的下侧部分（17）形成有油释放空间（18）。加强板（19）跨越汽缸侧壁和周壁（3）的下侧部分（17）和排油空间（18）下方的推杆室（8）的底壁（10）之间，。排油空间18与回油通路（7）的出油口（20）连通。已经通过回油通道（7）的发动机油从出油口（20）释放到排油空间（18）中。释放到释放空间（18）中的发动机油被加强板（19）的上表面引导，从加强板（19）的后侧的引出端（25）落下到后侧空间（24）。

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