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21. 发明授权

US4509321A Apparatus for manufacturing fasciated yarn 失效
标题翻译：用于制造折叠纱线的装置
公开(公告)号：US4509321A
公开(公告)日：1985-04-09
申请号：US491414
申请日：1983-05-04
申请人： Koji Kajita , Takashi Nakayama , Seiichi Yamagata
发明人： Koji Kajita , Takashi Nakayama , Seiichi Yamagata
IPC分类号： D01H1/115 , D01H5/28
CPC分类号： D01H1/115
摘要： Apparatus for manufacturing fasciated spun yarn by false-twisting and detwisting a bundle of fibers is provided. The apparatus has a fiber-diffusing section which utilizes differential fluid flow to separate and transfer free fibers in a stable manner for subsequent wrapping about the fiber bundle as the bundle is detwisted.
摘要翻译：提供了通过假捻和一束纤维来制造折叠纺纱的装置。该装置具有纤维扩散部分，其利用差分流体流以稳定的方式分离和转移自由纤维，以便随着束被缠绕而在纤维束周围缠绕。

22. 发明授权

US4429523A Process for making fasciated spun yarn 失效
标题翻译：纺制短纤纱的工艺
公开(公告)号：US4429523A
公开(公告)日：1984-02-07
申请号：US396063
申请日：1982-07-07
申请人： Koji Kajita , Takashi Nakayama , Seiichi Yamagata
发明人： Koji Kajita , Takashi Nakayama , Seiichi Yamagata
IPC分类号： D01H1/00 , D01H1/115 , D01H5/28 , D02G3/22
CPC分类号： D01H1/115
摘要： A process for making a fasciated spun yarn by drafting and pneumatically false twisting a bundle of staple fibers is disclosed. In the method, the width W (mm) of a bundle of fibers measured just upstream of the nip point of a pair of second rollers of a drafting zone and a yarn count N (Nm) of the spun yarn are set to satisfy the following equation: ##EQU1## and the overfeed ratio of the bundle of fibers during the false twisting operation is 5% at most. The fasciated spun yarn made by this process has a straight shape, resembles a ring-spun yarn and has sufficiently stable strength.
摘要翻译：公开了一种用于通过牵伸和气动假捻扭曲一束短纤维来制造短纤纱的方法。在该方法中，在牵伸区的一对第二辊的夹紧点的上游测定的纤维束的宽度W（mm）和纺纱的纱线数N（Nm）设定为满足以下方程：，假捻操作期间纤维束的过量比最多为5％。由该方法制成的纺丝纱线具有直线形状，类似于环锭纱线，并且具有足够稳定的强度。

23. 发明授权

US4323436A Purification of aqueous solution of potassium chloride 失效
标题翻译：纯化氯化钾水溶液
公开(公告)号：US4323436A
公开(公告)日：1982-04-06
申请号：US217745
申请日：1980-12-18
申请人： Eiji Itoi , Takashi Nakayama , Makoto Nakao , Yukio Matsumura
发明人： Eiji Itoi , Takashi Nakayama , Makoto Nakao , Yukio Matsumura
IPC分类号： C01D3/04 , C01D3/14 , C01D3/16 , C25B1/46
CPC分类号： C01D3/14 , C25B1/46
摘要： A purification of an aqueous solution of potassium chloride which is used for producing potassium hydroxide by an electrolysisin an electrolytic cell using a cation exchange membrane is carried out by incorporating an oxidizing reagent to remove additives as an anticaking reagent.
摘要翻译：通过使用阳离子交换膜通过电解槽电解生产氢氧化钾用于制造氢氧化钾的水溶液的纯化是通过引入氧化试剂来除去作为抗结块剂的添加剂进行的。

24. 发明授权

US09675930B2 Control method of plasma by magnetic field in an exhaust gas treating apparatus and an exhaust gas treating apparatus using the same 有权
公开(公告)号：US09675930B2
公开(公告)日：2017-06-13
申请号：US12752537
申请日：2010-04-01
申请人： Toshio Awaji , Takashi Nakayama , Toshio Tanaka
发明人： Toshio Awaji , Takashi Nakayama , Toshio Tanaka
IPC分类号： B01D53/32 , H05H1/50
CPC分类号： B01D53/32 , B01D2257/204 , B01D2257/2066 , B01D2258/0216 , B01D2259/818 , H05H1/50 , H05H2245/1215
摘要： A plasma control method for an exhaust gas treating apparatus includes providing an exhaust gas treating apparatus having a plasma discharge space, a coil disposed on an outer circumference of the plasma discharge space, an upper electrode, and a lower electrode; generating plasma in the plasma discharge space; controlling the state of the plasma generated in the plasma discharge space by generating a magnetic field in the plasma discharge space between the upper electrode and the lower electrode; and cooling the reaction tube using a water cooled jacket disposed around the reaction tube. The magnetic field is generated by applying a current to the coil.

25. 发明授权

US08877134B2 Exhaust gas treating system 有权
标题翻译：废气处理系统
公开(公告)号：US08877134B2
公开(公告)日：2014-11-04
申请号：US12068302
申请日：2008-02-05
申请人： Toshio Awaji , Takashi Nakayama
发明人： Toshio Awaji , Takashi Nakayama
IPC分类号： B01J19/08 , B01D53/70 , H05H1/24 , B01D53/32
CPC分类号： B01D53/32 , B01D53/70 , B01D2251/206 , B01D2251/304 , B01D2251/402 , B01D2251/404 , B01D2251/604 , B01D2257/204 , B01D2257/2066 , B01D2259/818 , H05H1/24 , H05H1/48 , H05H2245/121 , Y10S422/906
摘要： The present invention, aiming at providing an exhaust gas treating system capable of increasing the exhaust gas treating volume, through increase of the diameter of the reaction tube, stabilizing the state of generation of plasma without requiring any water membrane, and improving the harmful matters removing performance by extending the plasma length, comprises a reaction tube 1 for introducing exhaust gas G, an upper electrode 2 disposed in the air on the top side of the reaction tube 1, a lower electrode 3 disposed on the bottom side of the reaction tube 1, and a spray nozzle 4 for spraying an electrolytic solution D between the upper electrode 2 and the lower electrode 3, so as to form a path of electric current between the electrodes 2, 3 and generate plasma P in the reaction tube 1, by spraying an electrolytic solution D between the upper electrode 2 and the lower electrode 3.
摘要翻译：本发明旨在提供一种能够通过增加反应管的直径来提高废气处理体积的废气处理系统，稳定等离子体的产生状态而不需要任何水膜，并且改善除去有害物质通过延长等离子体长度的性能包括用于引入废气G的反应管1，设置在反应管1的上侧的空气中的上部电极2，设置在反应管1的底侧的下部电极3 以及用于在上部电极2和下部电极3之间喷射电解液D的喷嘴4，以在电极2,3之间形成电流路径，并通过喷射产生等离子体P 上电极2和下电极3之间的电解液D。

26. 发明授权

US08380348B2 Robot 有权
标题翻译：机器人
公开(公告)号：US08380348B2
公开(公告)日：2013-02-19
申请号：US12812189
申请日：2009-01-13
申请人： Norio Neki , Koji Okazaki , Takashi Nakayama , Masaaki Muromachi , Satoshi Kaneko , Yuta Kimura
发明人： Norio Neki , Koji Okazaki , Takashi Nakayama , Masaaki Muromachi , Satoshi Kaneko , Yuta Kimura
IPC分类号： G06F19/00
CPC分类号： B25J19/005 , G05D1/0891 , H01M2/1022 , H01M10/42 , H01M10/46 , H02J7/0045
摘要： Provided is a robot capable of appropriately adjusting a position and the like of a main body in view of executing a specified task involving an interaction with a target object. While the position and posture of the main body (10) are being controlled according to a second target path, the robot (1) moves from a first specified area to a second specified area and stands there. In this state, a second position deviation (=the deviation of the position of the main body from a second target path) and a second posture deviation (=the deviation of the posture of the main body from a second target posture) are determined. According to the determination result, the second target path is corrected so that the subsequent position deviation and the like may be smaller.
摘要翻译：考虑到执行涉及与目标对象的交互的指定任务，能够适当地调整主体的位置等的机器人。当根据第二目标路径控制主体（10）的位置和姿势时，机器人（1）从第一指定区域移动到第二指定区域并且站在那里。在该状态下，确定第二位置偏差（=主体与第二目标路径的位置的偏差）和第二姿势偏差（=主体的姿势与第二目标姿态的偏差）。根据确定结果，校正第二目标路径，使得随后的位置偏差等可以更小。

27. 发明授权

US08335285B2 Communication apparatus 有权
标题翻译：通讯设备
公开(公告)号：US08335285B2
公开(公告)日：2012-12-18
申请号：US12432981
申请日：2009-04-30
申请人： Takashi Nakayama
发明人： Takashi Nakayama
IPC分类号： H03D1/04
CPC分类号： H04B1/1036 , H04B1/715 , H04L27/0006 , H04L27/2626 , H04L27/2647
摘要： A communication apparatus includes a radio-frequency transmission-reception processing unit configured to perform radio-frequency processing to a transmitted signal and a received signal; a baseband processing unit configured to perform baseband processing; a signal detecting unit configured to detect a signal from which a signal transmitted from another communication system is detected; and an interference-to-another-communication-system avoiding unit configured to suppress an interfering signal to the other communication system in radio-frequency transmission processing by the radio-frequency transmission-reception processing unit if the signal detecting unit detects a signal.
摘要翻译：通信装置包括对发送信号和接收信号进行射频处理的射频发送接收处理部，基带处理单元，被配置为执行基带处理; 信号检测单元，被配置为检测从其检测到从另一通信系统发送的信号的信号; 以及干扰对另一通信系统避免单元，被配置为如果所述信号检测单元检测到信号，则通过所述射频发送接收处理单元在射频发送处理中抑制对所述另一通信系统的干扰信号。

28. 发明授权

US08231852B2 Silicon wafer and method for producing the same 有权
标题翻译：硅晶片及其制造方法
公开(公告)号：US08231852B2
公开(公告)日：2012-07-31
申请号：US12779968
申请日：2010-05-14
申请人： Wataru Itou , Takashi Nakayama , Shigeru Umeno , Hiroaki Taguchi , Yasuo Koike
发明人： Wataru Itou , Takashi Nakayama , Shigeru Umeno , Hiroaki Taguchi , Yasuo Koike
IPC分类号： C01B33/02 , H01L21/00
CPC分类号： H01L21/3225 , C30B15/00 , C30B29/06 , C30B33/005
摘要： It is possible to provide a silicon wafer that as well as being free of COPs and dislocation clusters, has defects (grown-in defects including silicon oxides), which are not overt in an as-grown state, such as OSF nuclei and oxygen precipitate nuclei existing in the PV region, to be vanished or reduced, by adopting a method for producing a silicon wafer, the method comprising the steps of: growing a single crystal silicon ingot by the Czochralski method; cutting a silicon wafer out of the ingot; subjecting the wafer to an RTP at 1,250° C. or more for 10 seconds or more in an oxidizing atmosphere; and removing a grown-in defect region including silicon oxides in the vicinity of wafer surface layer after the RTP.
摘要翻译：可以提供不含COP和位错簇的硅晶片，在生长状态下没有明显的缺陷（包括氧化硅的生长缺陷），例如OSF核和氧沉淀物通过采用硅晶片的制造方法，存在于PV区域中的原子核将被消除或减少，该方法包括以下步骤：通过切克劳斯基法生长单晶硅锭; 从硅锭切出硅晶片; 在氧化气氛中将晶片经受1,250℃或更高10秒钟以上的RTP; 并且在RTP之后去除晶片表面层附近的包含氧化硅的生长缺陷区域。

29. 发明授权

US08134538B2 Touch panel input device and processing execution method 有权
标题翻译：触摸屏输入设备和处理执行方式
公开(公告)号：US08134538B2
公开(公告)日：2012-03-13
申请号：US12356956
申请日：2009-01-21
申请人： Takashi Nakayama
发明人： Takashi Nakayama
IPC分类号： G06F3/041
CPC分类号： G06F3/04886 , G01C21/3611 , G01C21/3664
摘要： A touch panel input device and a processing execution method eliminates wasteful operations of a user and increases user convenience. If a state determination unit (multiple key press detection unit) detects that multiple operation keys displayed on a touch panel screen were multiply pressed, an operation control unit (first processing execution control unit) controls execution of processing corresponding to any one of the plural operation keys. A waiting unit sets a state, which causes processing to wait for a user to make a selection instruction to select and execute processing corresponding to the other operation key. If the selection instruction is accepted, the operation control unit (second processing execution control unit) controls execution of processing corresponding to the selection instruction so as to select and execute the processing corresponding to the other operation key, following the multiple key press.
摘要翻译：触摸面板输入装置和处理执行方法消除了用户浪费的操作并且增加了用户的便利性。如果状态确定单元（多键按压检测单元）检测到在触摸面板屏幕上显示的多个操作键被多次按压，则操作控制单元（第一处理执行控制单元）控制与多个操作中的任何一个相对应的处理的执行钥匙等待单元设置状态，这导致处理等待用户进行选择指令以选择并执行与其他操作键相对应的处理。如果选择指令被接受，则操作控制单元（第二处理执行控制单元）控制与选择指令相对应的处理的执行，以便在多次按键之后选择并执行与其他操作键相对应的处理。

30. 发明申请

US20110096799A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND TUNABLE WAVELENGTH LASER LIGHT SOURCE 有权
标题翻译：半导体发光元件和可调光波长光源
公开(公告)号：US20110096799A1
公开(公告)日：2011-04-28
申请号：US12298971
申请日：2007-04-20
申请人： Hiroshi Mori , Takashi Nakayama , Atsushi Yamada
发明人： Hiroshi Mori , Takashi Nakayama , Atsushi Yamada
IPC分类号： H01S3/10 , H01L33/20
CPC分类号： H01S5/141 , H01L33/0045 , H01S5/0261 , H01S5/0612 , H01S5/101 , H01S5/1085 , H01S5/22 , H01S5/227
摘要： The present invention provides a semiconductor light emitting element that can obtain oscillation at desired wavelengths. The semiconductor light emitting element comprises a semiconductor substrate 11, an active layer 12 for emitting and propagating light, which is formed in a stripe shape above the semiconductor substrate 11, buried layers 13a, 13b formed on both lateral sides of the active layer 12, a cladding layer 16 formed above the active layer 12 and the buried layers 13a, 13b, a first electrode 17a formed above the cladding layer 16, and a second electrode 17b formed below the semiconductor substrate 11. The active layer 12 opens on one end facet 14a among the two end facets formed by cleavage so that the active layer 12 makes a predetermined angle to the normal direction of the one end facet 14a. A partially heating means 15 for heating a predetermined length portion of the active layer 12 along the direction of light propagation is formed on a first electrode at a position thermally isolated from the one end facet 14a.
摘要翻译：本发明提供一种半导体发光元件，其能够获得期望波长的振荡。半导体发光元件包括半导体衬底11，用于发射和传播光的有源层12，其形成在半导体衬底11上方的条形形状，形成在有源层12的两个侧面上的掩埋层13a，13b，在有源层12上形成的包覆层16和埋层13a，13b，形成在包层16上方的第一电极17a，以及形成在半导体衬底11下面的第二电极17b。活性层12在一端面上开口通过切割形成的两个端面中的14a，使得有源层12与一个端面14a的法线方向成预定的角度。在与一个端面14a热隔离的位置上的第一电极上形成有用于沿着光传播方向加热有源层12的预定长度部分的部分加热装置15。

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