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21. 发明授权

US07485573B2 Process of making a semiconductor device using multiple antireflective materials 失效
标题翻译：制造使用多种抗反射材料的半导体器件的工艺
公开(公告)号：US07485573B2
公开(公告)日：2009-02-03
申请号：US11356027
申请日：2006-02-17
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： H01L21/4763
CPC分类号： G03F7/091 , Y10S438/952
摘要： A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.
摘要翻译：一种光刻结构，主要由以下部分组成：设置在基板上的有机抗反射材料; 气相沉积的RCHX材料，其中R是选自Si，Ge，B，Sn，Fe和Ti中的一种或多种元素，并且其中X不存在或者是选自以下的一种或多种元素： O，N，S和F; 以及设置在RCHX材料上的光致抗蚀剂材料。本发明还涉及制造光刻结构的方法，并且使用该结构来图案化衬底。

22. 发明申请

US20080254633A1 MULTIPLE EXPOSURE LITHOGRAPHY METHOD INCORPORATING INTERMEDIATE LAYER PATTERNING 失效
标题翻译：包含中间层图案的多次曝光平移方法
公开(公告)号：US20080254633A1
公开(公告)日：2008-10-16
申请号：US11733412
申请日：2007-04-10
申请人： Sean D. Burns , Allen H. Gabor , Scott D. Halle , Dirk Pfeiffer
发明人： Sean D. Burns , Allen H. Gabor , Scott D. Halle , Dirk Pfeiffer
IPC分类号： H01L21/311 , H01L21/469
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338 , H01L21/32139
摘要： A method of patterning a semiconductor substrate includes creating a first set of patterned features in a first inorganic layer; creating a second set of patterned features in one of the first inorganic layer and a second inorganic layer; and transferring, into an organic underlayer, both the first and second sets of patterned features, wherein the first and second sets of patterned features are combined into a composite set of patterned features that are transferable into the substrate by using the organic underlayer as a mask.
摘要翻译：图案化半导体衬底的方法包括在第一无机层中形成第一组图案化特征; 在所述第一无机层和第二无机层之一中产生第二组图案特征; 以及将第一组和第二组图案特征转移到有机底层中，其中第一组和第二组图案化特征被组合成通过使用有机底层作为掩模可转移到衬底中的图案化特征的复合组合。

23. 发明授权

US07147976B2 Binary OPC for assist feature layout optimization 失效
公开(公告)号：US07147976B2
公开(公告)日：2006-12-12
申请号：US11251981
申请日：2005-10-17
申请人： Lars W. Liebmann , Richard A. Ferguson , Allen H. Gabor , Mark A. Lavin
发明人： Lars W. Liebmann , Richard A. Ferguson , Allen H. Gabor , Mark A. Lavin
IPC分类号： G03F9/00 , G06F17/50
CPC分类号： G03F1/36
摘要： A method of forming a photolithographic mask layout with Sub-Resolution Assist Feature (SRAF) elements on a mask for correcting for proximity effects for a pattern imaged comprising the steps of developing a layout of mask features for printing main pattern features. Provide a table of SRAF element data including spacing of main pattern features and SRAF elements, applying SRAF elements to the mask layout as a function of spacing of main pattern features and SRAF elements, legalizing the SRAF elements as a function of style options, and providing a target pattern comprising a modified layout for the mask, identifying problem edge segments of an SRAF element of the target pattern at risk of causing a printing defect, applying a selected bias to the problem edge segments to modify the pattern where there are areas of SRAF element loss, and providing an output of a modified pattern with modified SRAF elements removing the areas of SRAF element loss. The system can provide SRAF elements to the mask layout as a function of spacing of main pattern features and SRAF elements may be based on data from the SRAF table; or the system can applying model based OPC for exposure dose values based on data from the SRAF table.

24. 发明授权

US09360858B2 Alignment data based process control system 有权
标题翻译：基于对齐数据的过程控制系统
公开(公告)号：US09360858B2
公开(公告)日：2016-06-07
申请号：US13204955
申请日：2011-08-08
申请人： Christopher P. Ausschnitt , Timothy A. Brunner , Allen H. Gabor , Oleg Gluschenkov , Vinayan C. Menon
发明人： Christopher P. Ausschnitt , Timothy A. Brunner , Allen H. Gabor , Oleg Gluschenkov , Vinayan C. Menon
IPC分类号： G06F19/00 , G05B19/401
CPC分类号： G05B19/401 , G05B2219/2602 , G05B2219/45031
摘要： Deformation of a substrate due to one or more processing steps is determined by measuring substrate alignment data at lithographic processing steps before and after the one or more processing steps. Any abnormal pattern in the alignment data differential is identified by comparing the calculated alignment data differential with previous data accumulated in a database. By comparing the abnormal pattern with previously identified tool-specific patterns for alignment data differential, a processing step that introduces the abnormal pattern and/or the nature of the abnormal processing can be identified, and appropriate process control measures can be taken to rectify any anomaly in the identified processing step.
摘要翻译：通过在一个或多个处理步骤之前和之后的光刻处理步骤中测量衬底对准数据来确定由于一个或多个处理步骤导致的衬底的变形。通过将计算的对准数据差异与在数据库中累积的先前数据进行比较来识别对准数据差异中的任何异常模式。通过将异常模式与先前识别的针对对准数据差异的工具特定模式进行比较，可以识别引入异常模式和/或异常处理性质的处理步骤，并且可以采取适当的过程控制措施来纠正任何异常在所识别的处理步骤中。

25. 发明申请

US20130017486A1 PROCESS OF MAKING A LITHOGRAPHIC STRUCTURE USING ANTIREFLECTIVE MATERIALS 有权
标题翻译：使用抗反射材料制作光刻结构的方法
公开(公告)号：US20130017486A1
公开(公告)日：2013-01-17
申请号：US13617634
申请日：2012-09-14
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： G03F7/004 , B32B7/02 , B32B27/06 , G03F7/20
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate, and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译：一种光刻结构，包括：设置在基板上的有机抗反射材料和设置在有机抗反射材料上的硅抗反射材料。硅抗反射材料包括具有SiO x主链，发色团和对193nm或157nm辐射基本上透明的透明有机基团的交联聚合物。组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。本发明还涉及制备光刻结构的方法。

26. 发明授权

US08293454B2 Process of making a lithographic structure using antireflective materials 有权
标题翻译：使用抗反射材料制作平版印刷结构的工艺
公开(公告)号：US08293454B2
公开(公告)日：2012-10-23
申请号：US12199253
申请日：2008-11-18
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： B32B9/04 , G03F7/075
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译：一种光刻结构，包括：设置在基板上的有机抗反射材料; 以及设置在有机抗反射材料上的硅抗反射材料。硅抗反射材料包括具有SiO x主链，发色团和对193nm或157nm辐射基本透明的透明有机基团的交联聚合物。组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。本发明还涉及制备光刻结构的方法。

27. 发明授权

US07479355B1 Mask design for enhancing line end resolution 失效
标题翻译：面膜设计，提高线端分辨率
公开(公告)号：US07479355B1
公开(公告)日：2009-01-20
申请号：US12037968
申请日：2008-02-27
申请人： Zheng G. Chen , Allen H. Gabor
发明人： Zheng G. Chen , Allen H. Gabor
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： G03F1/36
摘要： A mask design for enhancing line end resolution is provided. In an embodiment, a mask for use in patterning an underlying layer comprises opaque regions and transparent regions arranged to define a line having an end, a slit extending laterally through the line a spaced distance from the end of the line, and a feature extending above or below the space adjacent to the end of the line.
摘要翻译：提供了一种增强线端分辨率的面具设计。在一个实施例中，用于图案化底层的掩模包括不透明区域和布置成限定具有端部的线的透明区域，沿着与线路端部间隔开的距离横向延伸穿过线的狭缝以及在该线路的上方延伸的特征或者在与行尾相邻的空间之下。

28. 发明授权

US07465615B1 Polyconductor line end formation and related mask 有权
标题翻译：多导体线端部形成和相关掩模
公开(公告)号：US07465615B1
公开(公告)日：2008-12-16
申请号：US11935714
申请日：2007-11-06
申请人： Shahid A. Butt , Allen H. Gabor , Donald J. Samuels
发明人： Shahid A. Butt , Allen H. Gabor , Donald J. Samuels
IPC分类号： H04L21/00
CPC分类号： G03F7/70441 , G03F1/36 , H01L21/0335 , H01L21/32139 , H01L21/76838
摘要： Methods of forming adjacent polyconductor line ends and a mask therefor are disclosed. In one embodiment, the method includes forming a polyconductor layer over an isolation region; forming a mask over the polyconductor layer, the mask including shapes to create the polyconductor line ends and a correction element to ensure a designed proximity of the polyconductor line ends; and etching the polyconductor layer using the patterned photoresist mask to create the adjacent polyconductor line ends, wherein the correction element is removed during the etching.
摘要翻译：公开了形成相邻多导体线端的方法及其掩模。在一个实施例中，该方法包括在隔离区域上形成多导体层; 在所述多导体层上形成掩模，所述掩模包括形成多导体线端的形状和校正元件，以确保多导体线的设计接近端; 以及使用图案化的光致抗蚀剂掩模蚀刻多导体层以产生相邻的多导体线端，其中在蚀刻期间去除校正元件。

29. 发明授权

US09046788B2 Method for monitoring focus on an integrated wafer 有权
标题翻译：用于监控集成晶圆的方法
公开(公告)号：US09046788B2
公开(公告)日：2015-06-02
申请号：US12122929
申请日：2008-05-19
申请人： Allen H. Gabor , Wai-Kin Li
发明人： Allen H. Gabor , Wai-Kin Li
IPC分类号： G03B27/52 , G03B27/68 , G03F7/20
CPC分类号： G03F7/70333 , G03F7/70508 , G03F7/70641
摘要： A method and apparatus are provided for improving the focusing of a substrate such as a wafer during the photolithography imaging procedure of a semiconductor manufacturing process. The invention is particularly useful for step-and-scan system and the CD of two features in each exposure field are measured in fields exposed at varying focus to form at least two Bossung curves. Exposure focus instructions are calculated based on the intersection point of the curves and the wafer is then scanned and imaged based on the calculated exposure focus instructions. In another aspect of the invention, when multiple wafers are being processed operational variances may cause a drift in the focus. The focus drift can be easily corrected by measuring the critical dimension of each of the features and comparing the difference to determine if any focus offset is needed to return the focus to the original calculated focus value.
摘要翻译：提供了一种用于在半导体制造工艺的光刻成像过程期间改善诸如晶片之类的衬底的聚焦的方法和装置。本发明对于步进扫描系统特别有用，并且每个曝光场中的两个特征的CD在以不同焦点曝光的场中测量以形成至少两个Bossung曲线。基于曲线的交点，然后基于计算出的曝光聚焦指令对晶片进行扫描和成像，计算曝光对焦指令。在本发明的另一方面，当正在处理多个晶片时，操作方差可能导致焦点漂移。可以通过测量每个特征的临界尺寸并比较差异来确定是否需要任何聚焦偏移以将焦点返回到原始计算的聚焦值，从而容易地校正聚焦漂移。

30. 发明申请

US20120126294A1 WAFER FILL PATTERNS AND USES 有权
标题翻译： WAFER FILL PATTERNS和用途
公开(公告)号：US20120126294A1
公开(公告)日：2012-05-24
申请号：US12949148
申请日：2010-11-18
申请人： Martin Burkhardt , Matthew E. Colburn , Allen H. Gabor , Oleg Gluschenkov , Scott D. Halle , Howard S. Landis , Helen Wang
发明人： Martin Burkhardt , Matthew E. Colburn , Allen H. Gabor , Oleg Gluschenkov , Scott D. Halle , Howard S. Landis , Helen Wang
IPC分类号： H01L29/78 , H01L21/28 , H01L29/06 , H01L21/302
CPC分类号： H01L29/78 , H01L21/28123 , H01L21/32139 , H01L22/12 , H01L22/26
摘要： A method of forming a semiconductor device having a substrate, an active region and an inactive region includes: forming a hardmask layer over the substrate; transferring a first pattern into the hardmask layer in the active region of the semiconductor device; forming one or more fills in the inactive region; forming a cut-away hole within, covering, or partially covering, the one or more fills to expose a portion of the hardmask layer, the exposed portion being within the one or more fills; and exposing the hardmask layer to an etchant to divide the first pattern into a second pattern including at least two separate elements.
摘要翻译：一种形成具有衬底，有源区和非活性区的半导体器件的方法包括：在衬底上形成硬掩模层; 将第一图案转移到半导体器件的有源区中的硬掩模层中; 在非活性区域中形成一个或多个填充物; 在所述一个或多个填充物内部，覆盖或部分地覆盖所述硬掩模层的一部分以暴露所述硬掩模层的一部分内的切除孔，所述暴露部分在所述一个或多个填充物内; 以及将所述硬掩模层暴露于蚀刻剂以将所述第一图案划分成包括至少两个分离元件的第二图案。

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