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    • 26. 发明授权
    • Thin film transistor array panel for liquid crystal display having pixel electrode
    • 具有像素电极的液晶显示器的薄膜晶体管阵列面板
    • US07289171B2
    • 2007-10-30
    • US11551450
    • 2006-10-20
    • Dong-Gyu KimHyang-Shik KongJang-Soo Kim
    • Dong-Gyu KimHyang-Shik KongJang-Soo Kim
    • G02F1/136G02F1/1343
    • G02F1/136213G02F1/1337G02F1/133784G02F1/134336G02F1/136227G02F2201/123
    • A TFT array panel includes an insulating substrate, a gate line and a storage electrode line formed thereon. The gate line and the storage electrode line are covered with a gate insulating layer, and a semiconductor island is formed on the gate insulating layer. A pair of ohmic contacts are formed on the semiconductor island, and a data line and a drain electrode are formed thereon. The data line and the drain electrode are covered with a passivation layer having a contact hole exposing the drain electrode. A pixel electrode is formed on the passivation layer and connected to the drain electrode through the contact hole. The TFT array panel is covered with an alignment layer rubbed approximately in a direction from the upper left corner to the lower right corner of the TFT array panel or the pixel electrodes. The pixel electrode has approximately a rectangular shape and overlaps the gate line and the data line. The pixel electrode has an expansion located near the upper left corner of the pixel electrode to increase the width of the corresponding overlapping area between the pixel electrode and the gate line and/or the data line.
    • TFT阵列面板包括绝缘基板,栅极线和形成在其上的存储电极线。 栅极线和存储电极线被栅极绝缘层覆盖,并且在栅极绝缘层上形成半导体岛。 在半导体岛上形成一对欧姆接触,在其上形成数据线和漏电极。 数据线和漏电极被具有暴露漏电极的接触孔的钝化层覆盖。 像素电极形成在钝化层上,并通过接触孔与漏电极连接。 TFT阵列面板被大致沿着从TFT阵列板的左上角到右下角或像素电极的方向摩擦的取向膜覆盖。 像素电极具有大致矩形形状并且与栅极线和数据线重叠。 像素电极具有位于像素电极的左上角附近的扩展部,以增加像素电极与栅极线和/或数据线之间的对应重叠区域的宽度。
    • 30. 发明授权
    • Thin film transistor array panel
    • 薄膜晶体管阵列面板
    • US06650379B2
    • 2003-11-18
    • US10280055
    • 2002-10-25
    • Bum-Kee BaekHyang-Shik KongDal-Moe Kim
    • Bum-Kee BaekHyang-Shik KongDal-Moe Kim
    • G02F113
    • G02F1/13458G02F1/136227G02F1/1368H01L27/124H01L27/1288
    • Disclosed is a simplified manufacturing method for liquid crystal displays. A gate wire including a gate line, a gate pad and a gate electrode is formed on an insulating substrate. Next, a gate insulating layer covering the gate wire, a semiconductor layer, an ohmic contact layer, and a data conductive layer are sequentially deposited, and a photoresist pattern is formed on the data conductive layer. Following this step, the data conductive layer, using the photoresist pattern as an etch mask, is etched to form a data wire including a data line, a source electrode, a drain electrode, and a data pad. Next, the photoresist pattern is reflowed to cover the portion between the source electrode and the drain electrode, and a portion of the ohmic contact layer adjacent to a periphery of the data wire. Subsequently, portions of the ohmic contact layer and the semiconductor layer, which are not covered by the photoresist pattern, are etched, and the photoresist pattern is removed. Next, a portion of the ohmic contact layer, which is not covered by the data wire, is etched to expose a portion of the semiconductor layer between the source electrode and the drain electrode that is a channel portion of a thin film transistor. Finally, a protection layer, a pixel electrode, a redundant gate pad and a redundant data pad are formed.
    • 公开了一种用于液晶显示器的简化制造方法。 在绝缘基板上形成包括栅极线,栅极焊盘和栅电极的栅极线。 接下来,依次沉积覆盖栅极线,半导体层,欧姆接触层和数据导电层的栅极绝缘层,并且在数据导电层上形成光致抗蚀剂图案。 在该步骤之后,蚀刻使用光致抗蚀剂图案作为蚀刻掩模的数据导电层,以形成包括数据线,源电极,漏电极和数据焊盘的数据线。 接下来,光致抗蚀剂图案被回流以覆盖源电极和漏电极之间的部分,以及与数据线周边相邻的欧姆接触层的一部分。 随后,蚀刻未被光致抗蚀剂图案覆盖的欧姆接触层和半导体层的部分,并除去光致抗蚀剂图案。 接下来,蚀刻未被数据线覆盖的欧姆接触层的一部分,以暴露作为薄膜晶体管的沟道部分的源极和漏极之间的半导体层的一部分。 最后,形成保护层,像素电极,冗余栅极焊盘和冗余数据焊盘。