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    • 1. 发明申请
    • THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURE
    • 薄膜晶体管阵列和制造方法
    • US20080067603A1
    • 2008-03-20
    • US11696097
    • 2007-04-03
    • Jong-Hyun ChoungHong-Sick ParkJoo-Ae YoonJeong-Min ParkDoo-Hee JungSun-Young HongBong-Kyun KimWon-Suk ShinByeong-Jin Lee
    • Jong-Hyun ChoungHong-Sick ParkJoo-Ae YoonJeong-Min ParkDoo-Hee JungSun-Young HongBong-Kyun KimWon-Suk ShinByeong-Jin Lee
    • H01L21/00H01L29/76
    • H01L27/1288H01L27/1214
    • A method of manufacturing a thin film transistor array panel, including: forming gate lines on a substrate; forming a gate insulating layer on the gate lines; forming semiconductor layers on the gate insulating layer; forming data lines and drain electrodes on the semiconductor layers; depositing a passivation layer on the data lines and the drain electrodes; forming a first photoresist layer including a first portion and a second portion that is thinner than the first portion on the passivation layer; forming a first preliminary contact hole exposing the data lines by etching the passivation layer by using the first photoresist layer as a mask; removing the second portion of the first photoresist; forming a first contact hole by expanding the first preliminary contact hole and opening portions by etching the passivation layer by using the first portion of the first photoresist layer as a mask; depositing a conductor layer; and forming pixel electrodes in the opening portions and a first contact assistant member in the first contact hole by removing the first photoresist layer and the conductor layer located thereon.
    • 一种制造薄膜晶体管阵列面板的方法,包括:在衬底上形成栅极线; 在栅极线上形成栅极绝缘层; 在所述栅极绝缘层上形成半导体层; 在半导体层上形成数据线和漏电极; 在数据线和漏电极上沉积钝化层; 形成第一光致抗蚀剂层,其包括比钝化层上的第一部分更薄的第一部分和第二部分; 通过使用第一光致抗蚀剂层作为掩模,形成通过蚀刻钝化层而暴露数据线的第一预接触孔; 去除第一光致抗蚀剂的第二部分; 通过使用第一光致抗蚀剂层的第一部分作为掩模,通过蚀刻钝化层来扩展第一预接触孔和开口部来形成第一接触孔; 沉积导体层; 以及通过去除位于其上的第一光致抗蚀剂层和导体层,在开口部分中形成像素电极和第一接触孔中的第一接触辅助部件。
    • 2. 发明授权
    • Thin film transistor array panel and method of manufacture
    • 薄膜晶体管阵列面板及其制造方法
    • US07776633B2
    • 2010-08-17
    • US11696097
    • 2007-04-03
    • Jong-Hyun ChoungHong-Sick ParkJoo-Ae YoonJeong-Min ParkDoo-Hee JungSun-Young HongBong-Kyun KimWon-Suk ShinByeong-Jin Lee
    • Jong-Hyun ChoungHong-Sick ParkJoo-Ae YoonJeong-Min ParkDoo-Hee JungSun-Young HongBong-Kyun KimWon-Suk ShinByeong-Jin Lee
    • H01L21/00
    • H01L27/1288H01L27/1214
    • A method of manufacturing a thin film transistor array panel, including: forming gate lines on a substrate; forming a gate insulating layer on the gate lines; forming semiconductor layers on the gate insulating layer; forming data lines and drain electrodes on the semiconductor layers; depositing a passivation layer on the data lines and the drain electrodes; forming a first photoresist layer including a first portion and a second portion that is thinner than the first portion on the passivation layer; forming a first preliminary contact hole exposing the data lines by etching the passivation layer by using the first photoresist layer as a mask; removing the second portion of the first photoresist; forming a first contact hole by expanding the first preliminary contact hole and opening portions by etching the passivation layer by using the first portion of the first photoresist layer as a mask; depositing a conductor layer; and forming pixel electrodes in the opening portions and a first contact assistant member in the first contact hole by removing the first photoresist layer and the conductor layer located thereon.
    • 一种制造薄膜晶体管阵列面板的方法,包括:在衬底上形成栅极线; 在栅极线上形成栅极绝缘层; 在所述栅极绝缘层上形成半导体层; 在半导体层上形成数据线和漏电极; 在数据线和漏电极上沉积钝化层; 形成第一光致抗蚀剂层,其包括比钝化层上的第一部分更薄的第一部分和第二部分; 通过使用第一光致抗蚀剂层作为掩模,形成通过蚀刻钝化层而暴露数据线的第一预接触孔; 去除第一光致抗蚀剂的第二部分; 通过使用第一光致抗蚀剂层的第一部分作为掩模,通过蚀刻钝化层来扩展第一预接触孔和开口部来形成第一接触孔; 沉积导体层; 以及通过去除位于其上的第一光致抗蚀剂层和导体层,在开口部分中形成像素电极和第一接触孔中的第一接触辅助部件。