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21. 发明授权

US06368776B1 Treatment apparatus and treatment method 有权
标题翻译：治疗仪器及治疗方法
公开(公告)号：US06368776B1
公开(公告)日：2002-04-09
申请号：US09270806
申请日：1999-03-17
申请人： Koji Harada , Junichi Nagata , Yasunori Kawakami , Masatoshi Kaneda , Norio Semba , Yoshio Kimura , Masami Akimoto , Yasuhiro Sakamoto , Nobuyuki Jinnai
发明人： Koji Harada , Junichi Nagata , Yasunori Kawakami , Masatoshi Kaneda , Norio Semba , Yoshio Kimura , Masami Akimoto , Yasuhiro Sakamoto , Nobuyuki Jinnai
IPC分类号： G03C500
CPC分类号： H01L21/67253 , H01L21/67109 , H01L21/6715 , H01L21/67248
摘要： A gas supplied from a gas source is exposed to an atmosphere above a liquid surface in a tank saving the liquid and thereafter is supplied around a wafer in a treatment chamber through a gas supply passage and a supply port. The gas supplied around the wafer uniformly flows from around the wafer toward above the center of the wafer and thereafter is discharged from an exhaust port which is formed at the top of the treatment chamber. Meanwhile, with respect to the wafer, heat treatment is performed by a heating mechanism and a predetermined PEB is carried out. The humidified gas is supplied into the treatment chamber, thereby preventing drying in the treatment chamber. Therefore, water in resist is not taken out, resulting in that a required resist pattern can be formed on the wafer.
摘要翻译：从气源供给的气体暴露在储存液体的槽内的液面以上的气氛中，然后通过气体供给通路和供给口在处理室内的晶片供给。在晶片周围供给的气体均匀地从晶片周围朝向晶片的中心方向流动，之后从形成在处理室顶部的排气口排出。同时，相对于晶片，通过加热机构进行热处理，进行规定的PEB。将加湿气体供给到处理室，防止处理室内的干燥。因此，抗蚀剂中的水不会被取出，导致可以在晶片上形成所需的抗蚀剂图案。

22. 发明授权

US06337501B1 Semiconductor device having bipolar transistor and MOS transistor 有权
标题翻译：具有双极晶体管和MOS晶体管的半导体器件
公开(公告)号：US06337501B1
公开(公告)日：2002-01-08
申请号：US09538490
申请日：2000-03-30
申请人： Yutaka Fukuda , Atsuo Onozaki , Junichi Nagata , Kiyoshi Yamamoto
发明人： Yutaka Fukuda , Atsuo Onozaki , Junichi Nagata , Kiyoshi Yamamoto
IPC分类号： H01L2701
CPC分类号： H01L27/1203 , H01L27/0722
摘要： A semiconductor device in which a bipolar transistor and a MOS transistor are formed in a common element region, which can prevent a circuit layout pattern from being large due to a wiring. A semiconductor device having an element region formed by the N−-type layer, which is isolated and insulated from the other regions. A P+-type base region, an N−-type emitter region, an N+-type collector region, and a P+-type excess carrier removing region for removing excess carrier in the P+-type base region, are commonly formed in particular one N−-type layer. Thus, a bipolar transistor is defined. Furthermore, a gate oxide film is formed on the surface of the N−-type layer where between the P+-type base region and the P+-type excess carrier removing region. A polysilicon layer is formed on the gate oxide film. Thus, a P+-type MOS transistor is defined by using the P+-type base region as a source and the P+-type excess carrier removing region a drain. The P+-type base region, the P+-type excess carrier removing region, the N−-type emitter region, the N+-type collector region, and the polysilicon layer are respectively connected to metallic electrodes. Since the bipolar transistor and the MOS transistor are commonly formed in an element region, and one of regions is commonly used, it can prevent a circuit layout pattern from being large due to a wiring for connecting the bipolar transistor and the MOS transistor.
摘要翻译：在公共元件区域中形成双极晶体管和MOS晶体管的半导体器件，其可以防止由布线引起的电路布局图案大。一种具有由N型层形成的元件区域的半导体器件，其与其它区域隔离并绝缘。通常在P +型基区中除去P +型基区中的过量载体的P +型碱基区，N型发射极区，N +型集电极区和P +型过剩载流子除去区， - 类型层。因此，定义了双极晶体管。此外，在P +型基极区域和P +型过载载流子除去区域之间的N型层的表面上形成栅极氧化膜。在栅极氧化膜上形成多晶硅层。因此，通过使用P +型基极区域作为源极和P +型过剩载流子去除区域是漏极来限定P +型MOS晶体管。 P +型基极区，P +型过剩载流子除去区，N型发射极区，N +型集电极区，多晶硅层分别与金属电极连接。由于双极晶体管和MOS晶体管通常形成在元件区域中，并且通常使用一个区域，所以由于用于连接双极晶体管和MOS晶体管的布线，可以防止电路布局图案变大。

23. 发明授权

US08704556B2 Integrated circuit-based drive circuit for driving voltage-controlled switching device and method of manufacturing the drive circuit 有权
标题翻译：用于驱动压控开关装置的集成电路驱动电路和制造驱动电路的方法
公开(公告)号：US08704556B2
公开(公告)日：2014-04-22
申请号：US13324153
申请日：2011-12-13
申请人： Yoshiyuki Hamanaka , Tsuneo Maebara , Junichi Nagata , Tomoyuki Muraho , Akito Itou
发明人： Yoshiyuki Hamanaka , Tsuneo Maebara , Junichi Nagata , Tomoyuki Muraho , Akito Itou
IPC分类号： H03K3/00
CPC分类号： H03K17/6877 , H02M7/5387 , H03K17/567 , H03K17/602 , H03K2017/0806
摘要： A drive circuit supplies a charging current via a charging path to drive the control terminal of a voltage-controlled switching device, with a resistor and a switching device being connected in series in the charging path. A control circuit in an integrated circuit of the drive circuit operates an internal switching device such as to selectively enable/interrupt the charging current and to regulate the voltage drop across the resistor to a fixed value. The switching device connected in the charging path can be readily changed from the internal switching device to an external switching device, in accordance with the operating requirements of the driven switching device.
摘要翻译：驱动电路通过充电路径提供充电电流，以驱动电压控制开关装置的控制端，电阻器和开关装置串联连接在充电路径中。驱动电路的集成电路中的控制电路操作内部开关器件，以便选择性地使能/中断充电电流并且将电阻器两端的电压降调整到固定值。连接在充电路径中的开关装置可以根据从动开关装置的操作要求容易地从内部开关装置改变到外部开关装置。

24. 发明授权

US08350601B2 Device for driving switching elements 有权
标题翻译：用于驱动开关元件的装置
公开(公告)号：US08350601B2
公开(公告)日：2013-01-08
申请号：US12961836
申请日：2010-12-07
申请人： Junichi Nagata , Tsuneo Maebara
发明人： Junichi Nagata , Tsuneo Maebara
IPC分类号： H03B1/00
CPC分类号： H03K17/168
摘要： A drive unit controls the operation of a corresponding power switching element such as IGBT which forms an inverter and a converter. The drive unit controls the operation of the corresponding power switching element to supply an operation current to a motor generator. First and second switching elements in the drive unit are simultaneously turned on when an operation signal transferred from a control device is switched to a turning-on instruction operation signal. The voltage at the gate terminal of the power switching element is shifted to a divided voltage obtained by dividing a voltage of the power source by first and second resistances connected in series in the drive unit. When a mirror time period of the power switching element is elapsed, the second switching element only is turned off in order to shift the gate voltage of the power switching element to the voltage of the power source.
摘要翻译：驱动单元控制相应的功率开关元件（例如形成逆变器的IGBT）和转换器的操作。驱动单元控制对应的功率开关元件的操作以向电动发电机提供操作电流。当从控制装置传送的操作信号切换到接通指令操作信号时，驱动单元中的第一和第二开关元件同时导通。功率开关元件的栅极端子处的电压被移动到通过将电源的电压除以在驱动单元中串联连接的第一和第二电阻而获得的分压。当经过功率开关元件的反射镜时间周期时，为了将功率开关元件的栅极电压移动到电源的电压，仅切断第二开关元件。

25. 发明申请

US20080231340A1 Level shift circuit 有权
标题翻译：电平移位电路
公开(公告)号：US20080231340A1
公开(公告)日：2008-09-25
申请号：US12076521
申请日：2008-03-19
申请人： Satoshi Shiraki , Hiroyuki Ban , Junichi Nagata
发明人： Satoshi Shiraki , Hiroyuki Ban , Junichi Nagata
IPC分类号： H03L5/00
CPC分类号： H03K19/018571 , H01L27/0251 , H03K5/003 , H03K19/00361
摘要： A level shift circuit includes a first capacitor circuit including capacitors connected in series between a ground and a predetermined potential, a first trigger circuit coupled to the predetermined potential side of the first capacitor circuit, an input terminal coupled to the ground side of the first capacitor circuit, a second capacitor circuit including capacitors connected in series between the ground and the predetermined potential, a second trigger circuit coupled to the predetermined potential side of the second capacitor circuit, an inverter coupled between the input terminal and the ground potential side of the second capacitor circuit, and a SR latch circuit having a first input coupled to an output of the first trigger circuit and a second input coupled to an output of the second trigger circuit.
摘要翻译：电平移位电路包括：第一电容器电路，包括串联连接在接地和预定电位之间的电容器;耦合到第一电容器电路的预定电位侧的第一触发电路;耦合到第一电容器的接地侧的输入端子电路，包括串联连接在接地和预定电位之间的电容器的第二电容器电路，耦合到第二电容器电路的预定电位侧的第二触发电路，耦合在第二电容器的输入端子和地电位侧之间的反相器电容器电路和SR锁存电路，其具有耦合到第一触发电路的输出的第一输入和耦合到第二触发电路的输出的第二输入。

26. 发明授权

US07400125B2 Power supply circuit with series regulator 有权
标题翻译：电源电路带串联调节器
公开(公告)号：US07400125B2
公开(公告)日：2008-07-15
申请号：US11328418
申请日：2006-01-10
申请人： Akio Kojima , Junichi Nagata
发明人： Akio Kojima , Junichi Nagata
IPC分类号： G05F1/40 , G05F1/56
CPC分类号： G05F1/575
摘要： A series-regulator type of power supply circuit is provided. In the circuit, the emitter and collector of a transistor are connected to power input/output terminals. A control circuit controls a base current of the transistor based on the output voltage detected at the power output terminal and a given target voltage. A resistor circuit connects the base and the collector of the transistor. A bypass circuit connects the emitter and the base of the transistor and passes a bypass current. The accepting circuit connected to the power output terminal accepts (absorbs) current from an output current. An amount of the acceptance current is equal to or larger than an amount of the bypass current and a product of the bypass current and a resistance value of the resistance circuit is equal to or more than a difference between a voltage at the power input terminal and the target voltage.
摘要翻译：提供串联稳压器型电源电路。在电路中，晶体管的发射极和集电极连接到电源输入/输出端子。控制电路基于在功率输出端检测到的输出电压和给定的目标电压来控制晶体管的基极电流。电阻电路连接晶体管的基极和集电极。旁路电路连接晶体管的发射极和基极，并传递旁路电流。连接到电力输出端子的接受电路从输出电流接受（吸收）电流。接受电流的量等于或大于旁路电流的量，并且旁路电流与电阻电路的电阻值的乘积等于或大于电力输入端子处的电压和目标电压。

27. 发明申请

US20080090095A1 Adhesiveless Copper Clad Laminates And Method For Manufacturing Thereof 审中-公开
标题翻译：无粘性铜包覆层及其制造方法
公开(公告)号：US20080090095A1
公开(公告)日：2008-04-17
申请号：US11661308
申请日：2005-08-24
申请人： Junichi Nagata , Yoshiyuki Asakawa
发明人： Junichi Nagata , Yoshiyuki Asakawa
IPC分类号： H05K1/09 , B32B15/08 , C23C14/14 , H05K3/38 , C23C28/02
CPC分类号： C23C28/00 , C23C14/20 , C23C28/021 , C23C28/023 , H05K1/0393 , H05K3/388 , Y10T428/12535 , Y10T428/12569 , Y10T428/12826 , Y10T428/1291 , Y10T428/12944 , Y10T428/24967 , Y10T428/265 , Y10T428/31681
摘要： The present invention provides adhesiveless copper clad laminates, which does not have defects on a copper film part due to a pin hole generated at the time of forming a base metal layer on an insulating film by dry plating process, has excellent adhesion between the insulating film and the base metal layer and corrosion resistance, and has a copper film layer having high insulation reliability, and provides a method for manufacturing such adhesiveless copper clad laminates. In adhesiveless copper clad laminates according to the present invention provided by forming a base metal layer directly at least on one plane of an insulating film without having an adhesive in between, and then by forming a copper film layer on the base metal layer, the base metal layer having a film thickness of 3 to 50 nm is formed by dry plating method and mainly contains a chrome-molybdenum-nickel alloy wherein the chrome ratio is 4 to 22 weight %, the molybdenum ratio is 5 to 40 weight %, and the balance is nickel.
摘要翻译：本发明提供了由于在通过干式电镀工艺在绝缘膜上形成基底金属层时产生的针孔而在铜膜部分上没有缺陷的无粘合铜包覆层压板在绝缘膜上具有优异的粘附性和基体金属层和耐腐蚀性，并且具有绝缘可靠性高的铜膜层，并且提供了制造这种无粘合剂覆铜层压板的方法。在根据本发明的无粘合铜包覆层压板中，通过直接在绝缘膜的至少一个平面上形成基底金属层而不在其间形成粘合剂，然后通过在基底金属层上形成铜膜层而提供，通过干式电镀法形成膜厚为3〜50nm的金属层，主要含有铬比为4〜22重量％，钼比例为5〜40重量％的铬钼镍合金，平衡是镍。

28. 发明授权

US06785106B2 Integrate circuit device 有权
标题翻译：集成电路器件
公开(公告)号：US06785106B2
公开(公告)日：2004-08-31
申请号：US10050745
申请日：2002-01-16
申请人： Junichi Nagata
发明人： Junichi Nagata
IPC分类号： H02H318
CPC分类号： G01R31/2884
摘要： An integrated circuit device includes an output terminal for connection with a terminal of an external load, and first and second power supply terminals for connection with a terminal of an external power supply. A switching element is connected between the output terminal and the first power supply terminal. The switching element, the external load, and the external power supply form a load current flow path. An impedance circuit is connected between the output terminal and the second power supply terminal. An abnormality detection circuit operates for monitoring a voltage at the output terminal, and detecting an abnormal condition on the basis of the monitored voltage. A drive control circuit operates for driving and controlling the switching element.
摘要翻译：集成电路装置包括用于与外部负载的端子连接的输出端子，以及用于与外部电源的端子连接的第一和第二电源端子。开关元件连接在输出端子和第一电源端子之间。开关元件，外部负载和外部电源形成负载电流流路。阻抗电路连接在输出端子和第二电源端子之间。异常检测电路用于监测输出端子处的电压，并且基于所监视的电压检测异常状况。驱动控制电路用于驱动和控制开关元件。

29. 发明授权

US06531855B2 DC power supply with output voltage detection and control 失效
标题翻译：直流电源具有输出电压检测和控制
公开(公告)号：US06531855B2
公开(公告)日：2003-03-11
申请号：US09892534
申请日：2001-06-28
申请人： Takeshi Miki , Junichi Nagata , Hiroyuki Ban
发明人： Takeshi Miki , Junichi Nagata , Hiroyuki Ban
IPC分类号： G05F140
CPC分类号： G05F1/575 , Y10S323/901
摘要： A series circuit including a capacitor and a resistor for detecting variation of the output voltage of dc power supply is further provided. During startup, a charge current corresponding to the rising rate of the output voltage flows through the series circuit. This reduces the base current of the power transistor to suppress the rising rate to suppress overshoot and undershoot. A clamp circuit is provided to the differential amplifier for detecting the error voltage. This prevents the saturation in the differential amplifier or limit the voltage variation amplitude to accelerate the operation of the operational amplifier and suppress undershoot. A delay circuit for disabling to driving circuit for the power transistor for the initial interval may be further provided to suppress the initial rapid rise of the output voltage.
摘要翻译：还提供一种包括用于检测直流电源的输出电压的变化的电容器和电阻器的串联电路。在启动期间，与输出电压的上升率相对应的充电电流流过串联电路。这降低了功率晶体管的基极电流，以抑制上升速率以抑制过冲和下冲。钳位电路提供给差分放大器，用于检测误差电压。这样可以防止差分放大器的饱和或者限制电压变化幅度，从而加速运算放大器的工作并抑制下冲。可以进一步提供用于禁止用于初始间隔的功率晶体管的驱动电路的延迟电路，以抑制输出电压的初始快速上升。

30. 发明授权

US06475266B2 Exhaust gas recovery method and apparatus 失效
标题翻译：废气回收方法及装置
公开(公告)号：US06475266B2
公开(公告)日：2002-11-05
申请号：US09809222
申请日：2001-03-16
申请人： Kenji Hayashi , Junichi Nagata , Shinichi Funabashi
发明人： Kenji Hayashi , Junichi Nagata , Shinichi Funabashi
IPC分类号： B01D5314
CPC分类号： B01D53/14 , B01D8/00 , B01D2257/704 , Y02A50/235
摘要： An exhaust gas recovery method and apparatus including: a first process in which volatile organic compound gas in exhaust gas from a exhaust gas discharging source is absorbed into water by a scrubber; a second process in which water including the volatile organic compound, which is obtained in the first process, is frozen and the volatile organic compound herein concentrated such that the water including the volatile organic compound is separated into water including a high concentration of the volatile organic compound, level of concentration being higher than that of the water including the volatile organic compound which is obtained in the first process, and ice; a third process in which cold of the ice obtained in the second process is used; and a fourth process in which the water including a high concentration of the volatile organic compound, which is obtained in the second process, is reused, is provided.
摘要翻译：一种排气回收方法及装置，其特征在于，包括：排气排出源排气中的挥发性有机化合物气体通过洗涤器吸收到水中的第一工序; 将第一种方法得到的包含挥发性有机化合物的水冷冻并将本文的挥发性有机化合物浓缩，使包含挥发性有机化合物的水分离成包含高浓度挥发性有机物的水的第二种方法化合物，浓度高于包含在第一种方法中获得的挥发性有机化合物的水的浓度，以及冰; 使用在第二过程中获得的冰冷的第三过程; 并且提供了其中包含在第二过程中获得的高浓度的挥发性有机化合物的水被再次使用的第四过程。

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