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21. 发明授权

US07994021B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07994021B2
公开(公告)日：2011-08-09
申请号：US11881285
申请日：2007-07-25
申请人： Hidekazu Miyairi , Hironobu Shoji , Akihisa Shimomura , Eiji Higa , Tomoaki Moriwaka , Shunpei Yamazaki
发明人： Hidekazu Miyairi , Hironobu Shoji , Akihisa Shimomura , Eiji Higa , Tomoaki Moriwaka , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L27/1266 , H01L27/1288 , H01L29/66765
摘要： A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.
摘要翻译：提供一种形成半导体器件的方法，包括形成在第一衬底的一个面上吸收光的层的步骤，在吸收光的层上提供第二衬底的步骤，提供掩模以对抗的步骤第一基板的另一面，以及通过用激光束照射通过掩模吸收光的层，将吸收光的层的一部分转印到第二基板的步骤。

22. 发明授权

US07989316B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07989316B2
公开(公告)日：2011-08-02
申请号：US12824775
申请日：2010-06-28
申请人： Akihisa Shimomura , Tatsuya Mizoi , Hidekazu Miyairi , Koichiro Tanaka
发明人： Akihisa Shimomura , Tatsuya Mizoi , Hidekazu Miyairi , Koichiro Tanaka
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L21/02002 , H01L21/02038 , H01L21/3043 , H01L21/76254 , H01L27/1214 , H01L29/66772 , H01L51/5206 , H01L2251/554
摘要： To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first.
摘要翻译：提供一种制造半导体器件的方法，其中在多个位置处转移的半导体膜之间的空间变窄。具有第一突起的第一接合衬底附接到基底衬底。然后，第一接合基板在第一突起处分离，使得第一半导体膜形成在基底基板上。接下来，具有第二突起的第二接合基板被附接到基底基板，使得第二突起被放置在与形成第一半导体膜的区域不同的区域中。随后，第二接合基板在第二突起处分离，使得第二半导体膜形成在基底基板上。在第二接合基板中，与第二接合基板垂直的方向（深度方向）上的每个第二突起的宽度大于首先形成的第一半导体膜的膜厚。

23. 发明授权

US07943885B2 Laser irradiation method and method of manufacturing semiconductor device 有权
标题翻译：激光照射方法及制造半导体器件的方法
公开(公告)号：US07943885B2
公开(公告)日：2011-05-17
申请号：US11433569
申请日：2006-05-15
申请人： Koichiro Tanaka , Hidekazu Miyairi , Aiko Shiga , Akihisa Shimomura , Atsuo Isobe
发明人： Koichiro Tanaka , Hidekazu Miyairi , Aiko Shiga , Akihisa Shimomura , Atsuo Isobe
IPC分类号： B23K26/06
CPC分类号： H01L21/02675 , B23K26/0604 , B23K26/0608 , B23K26/0732 , B23K26/0736 , B23K26/0738 , B23K26/352 , B23K2101/40 , H01L21/02532 , H01L21/02592 , H01L21/268 , H01L21/283 , H01L27/1285 , H01L27/1296 , H01L27/14625
摘要： By laser beam being slantly incident to the diffractive optics, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the device has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.
摘要翻译：通过激光束倾斜入射到衍射光学器件，发生像散等像，并且激光束的形状在照射表面或其附近被制成线性的。由于该装置具有非常简单的配置，所以光学调节更容易，并且该装置的尺寸变得紧凑。此外，由于光束相对于照射体倾斜入射，所以可以防止返回光束。

24. 发明授权

US07881350B2 Laser apparatus, laser irradiation method, and manufacturing method of semiconductor device 有权
标题翻译：激光装置，激光照射方法以及半导体装置的制造方法
公开(公告)号：US07881350B2
公开(公告)日：2011-02-01
申请号：US11730973
申请日：2007-04-05
申请人： Hidekazu Miyairi , Akihisa Shimomura , Tamae Takano , Masaki Koyama
发明人： Hidekazu Miyairi , Akihisa Shimomura , Tamae Takano , Masaki Koyama
IPC分类号： H01S3/10
CPC分类号： B23K26/08 , B23K26/704 , H01S3/005 , H01S3/225 , Y10S117/904
摘要： It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that can perform uniform a process with a laser beam to an object uniformly. The present invention provides a laser apparatus comprising an optical system for sampling a part of a laser beam emitted from an oscillator, a sensor for generating an electric signal including fluctuation in energy of the laser beam as a data from the part of the laser beam, a means for performing signal processing to the electrical signal to grasp a state of the fluctuation in energy of the laser beam, and controlling a relative speed of an beam spot of the laser beam to an object in order to change in phase with the fluctuation in energy of the laser beam.
摘要翻译：本发明的目的是提供一种可以使激光束对物体均匀地进行均匀处理的半导体器件的激光装置，激光照射方法和制造方法。本发明提供了一种激光装置，其包括用于对从振荡器发射的激光束的一部分进行取样的光学系统，用于产生包括激光束的能量波动的电信号作为来自激光束的一部分的数据的传感器，用于对电信号执行信号处理以掌握激光束的能量波动的状态的装置，以及将激光束的光点相对于物体的相对速度控制为与第一激光束激光束的能量。

25. 发明授权

US07795734B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07795734B2
公开(公告)日：2010-09-14
申请号：US11636598
申请日：2006-12-11
申请人： Atsuo Isobe , Shunpei Yamazaki , Chiho Kokubo , Koichiro Tanaka , Akihisa Shimomura , Tatsuya Arao , Hidekazu Miyairi
发明人： Atsuo Isobe , Shunpei Yamazaki , Chiho Kokubo , Koichiro Tanaka , Akihisa Shimomura , Tatsuya Arao , Hidekazu Miyairi
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/1281 , H01L27/3244 , H01L29/04 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： To provide a semiconductor device composed of a semiconductor element or a group of semiconductor elements, in which a crystalline semiconductor film having as few grain boundaries as possible in a channel formation region is formed on an insulating surface, which can operate at high speed, which have high current drive performance, and which are less fluctuated between elements. The method of the present invention includes: forming an insulating film with an opening on a substrate having an insulating surface; forming on the insulating film and over the opening an amorphous semiconductor film or a polycrystalline semiconductor film that has randomly-formed grain boundaries; forming a crystalline semiconductor film by melting the semiconductor film, pouring the melted semiconductor into the opening of the insulating film, and crystallizing or re-crystallizing the semiconductor film; and removing the crystalline semiconductor film except a portion of the crystalline semiconductor film that is in the opening to form a gate insulating film, which is in contact with the top face of the crystalline semiconductor film, and a gate electrode.
摘要翻译：为了提供一种由半导体元件或一组半导体元件组成的半导体器件，其中在绝缘表面上形成可在沟道形成区域中具有尽可能少的晶界的结晶半导体膜，其可以高速操作，其中具有高电流驱动性能，并且元件之间波动较小。本发明的方法包括：在具有绝缘表面的基板上形成具有开口的绝缘膜; 在绝缘膜上和开口上形成非晶半导体膜或随机形成晶界的多晶半导体膜; 通过熔化半导体膜形成晶体半导体膜，将熔融的半导体注入到绝缘膜的开口中，并使半导体膜结晶或再结晶; 以及去除除了开口中的结晶半导体膜的部分之外的晶体半导体膜以形成与晶体半导体膜的顶面接触的栅极绝缘膜和栅电极。

26. 发明授权

US07749818B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07749818B2
公开(公告)日：2010-07-06
申请号：US10352233
申请日：2003-01-28
申请人： Atsuo Isobe , Shunpei Yamazaki , Chiho Kokubo , Koichiro Tanaka , Akihisa Shimomura , Tatsuya Arao , Hidekazu Miyairi , Mai Akiba
发明人： Atsuo Isobe , Shunpei Yamazaki , Chiho Kokubo , Koichiro Tanaka , Akihisa Shimomura , Tatsuya Arao , Hidekazu Miyairi , Mai Akiba
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/1281 , H01L27/148 , H01L29/04 , H01L29/66757 , H01L29/785 , H01L29/78621 , H01L29/78675
摘要： An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel formation regions, and is capable of preventing conspicuous drops in TFT mobility, reduction in the ON current, and increases in the OFF current, all due to grain boundaries. Stripe shape or rectangular shape unevenness or opening is formed. Continuous wave laser light is then irradiated to a semiconductor film formed on an insulating film. Note that although it is most preferable to use continuous wave laser light at this point, pulse wave oscillation laser light may also be used.
摘要翻译：本发明的目的是提供一种制造半导体器件的方法以及通过使用能够防止在TFT沟道形成区域中形成晶界的激光结晶化方法而制造的半导体器件，并且是能够防止TFT迁移率的显着下降，导通电流的降低，以及由于晶界而导致的关断电流的增加。形成条纹形状或矩形形状不均匀或开口。然后将连续波激光照射到形成在绝缘膜上的半导体膜。另外，尽管在这一点上最好使用连续波激光，但也可以使用脉波振荡激光。

27. 发明授权

US07737506B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07737506B2
公开(公告)日：2010-06-15
申请号：US11513054
申请日：2006-08-31
申请人： Atsuo Isobe , Shunpei Yamazaki , Chiho Kokubo , Koichiro Tanaka , Akihisa Shimomura , Tatsuya Arao , Hidekazu Miyairi , Mai Akiba
发明人： Atsuo Isobe , Shunpei Yamazaki , Chiho Kokubo , Koichiro Tanaka , Akihisa Shimomura , Tatsuya Arao , Hidekazu Miyairi , Mai Akiba
IPC分类号： H01L29/76 , H01L29/778 , H01L27/01
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/1281 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel formation regions, and is capable of preventing conspicuous drops in TFT mobility, reduction in the ON current, and increases in the OFF current, all due to grain boundaries. Depressions and projections with stripe shape or rectangular shape are formed. Continuous wave laser light is then irradiated to a semiconductor film formed on an insulating film along the depressions and projections with stripe shape of the insulating film, or along a longitudinal axis direction or a transverse axis direction of the rectangular shape. Note that although it is most preferable to use continuous wave laser light at this point, pulse wave laser light may also be used.
摘要翻译：本发明的目的是提供一种制造半导体器件的方法以及通过使用能够防止在TFT沟道形成区域中形成晶界的激光结晶化方法而制造的半导体器件，并且是能够防止TFT迁移率的显着下降，导通电流的降低，以及由于晶界而导致的关断电流的增加。形成具有条状或矩形形状的凹凸和凹凸。然后将连续波激光照射到沿绝缘膜条纹形状的凹凸形状的绝缘膜上形成的半导体膜上，或者沿着矩形的长轴方向或横轴方向照射。另外，尽管在这一点上最好使用连续波激光，但也可以使用脉波激光。

28. 发明授权

US07736917B2 Laser beam irradiation method and method of manufacturing a thin firm transistor 有权
标题翻译：激光束照射方法和制造薄晶体管的方法
公开(公告)号：US07736917B2
公开(公告)日：2010-06-15
申请号：US11704206
申请日：2007-02-09
申请人： Akihisa Shimomura , Kenji Kasahara , Aiko Shiga , Hidekazu Miyairi , Koichiro Tanaka , Koji Dairiki
发明人： Akihisa Shimomura , Kenji Kasahara , Aiko Shiga , Hidekazu Miyairi , Koichiro Tanaka , Koji Dairiki
IPC分类号： H01L21/66
CPC分类号： H01L21/02686 , H01L21/02683 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/6675 , H01L29/78672 , Y10S438/949
摘要： A laser beam irradiation method that achieves uniform crystallization, even if a film thickness of an a-Si film or the like fluctuates, is provided. The present invention provides a laser beam irradiation method in which a non-single crystal semiconductor film is formed on a substrate having an insulating surface and a laser beam having a wavelength longer than 350 nm is irradiated to the non-single crystal semiconductor film, thus crystallizing the non-single crystal silicon film. The non-single crystal semiconductor film has a film thickness distribution within the surface of the substrate, and a differential coefficient of a laser beam absorptivity with respect to the film thickness of the non-single crystal semiconductor film is positive.
摘要翻译：即使a-Si膜的膜厚等发生波动，也能够实现均匀结晶化的激光束照射方法。本发明提供一种激光束照射方法，其中在具有绝缘面的基板上形成非单晶半导体膜，并且将具有波长超过350nm的激光束照射到非单晶半导体膜上，因此使非单晶硅膜结晶。非单晶半导体膜在基板的表面内具有膜厚分布，并且相对于非单晶半导体膜的膜厚度的激光束吸收率的微分系数为正。

29. 发明授权

US07589032B2 Laser apparatus, laser irradiation method, semiconductor manufacturing method, semiconductor device, and electronic equipment 有权
标题翻译：激光装置，激光照射方法，半导体制造方法，半导体装置和电子设备
公开(公告)号：US07589032B2
公开(公告)日：2009-09-15
申请号：US10237172
申请日：2002-09-09
申请人： Shunpei Yamazaki , Koichiro Tanaka , Hidekazu Miyairi , Aiko Shiga , Akihisa Shimomura , Mai Akiba
发明人： Shunpei Yamazaki , Koichiro Tanaka , Hidekazu Miyairi , Aiko Shiga , Akihisa Shimomura , Mai Akiba
IPC分类号： H01L21/26
CPC分类号： H01L21/02683 , B23K26/0823 , B23K2101/40 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L27/3244 , Y10S438/973
摘要： Continuous wave laser apparatus with enhanced processing efficiency is provided as well as a method of manufacturing a semiconductor device using the laser apparatus. The laser apparatus has: a laser oscillator; a unit for rotating a process object; a unit for moving the center of the rotation along a straight line; and an optical system for processing laser light that is outputted from the laser oscillator to irradiate with the laser light a certain region within the moving range of the process object. The laser apparatus is characterized in that the certain region is on a line extended from the straight line and that the position at which the certain region overlaps the process object is moved by rotating the process object while moving the center of the rotation along the straight line.
摘要翻译：提供了具有增强的处理效率的连续波激光装置以及使用该激光装置的半导体装置的制造方法。激光装置具有：激光振荡器; 用于旋转过程对象的单元; 沿着直线移动旋转中心的单元; 以及用于处理从激光振荡器输出的激光的光学系统，用于将激光照射到处理对象的移动范围内的特定区域。所述激光装置的特征在于，所述特定区域处于从所述直线延伸的线上，并且所述特定区域与所述加工对象重叠的位置通过使所述加工对象旋转而沿着所述直线移动所述旋转中心而被移动。

30. 发明授权

US07538350B2 Semiconductor thin film device 有权
标题翻译：半导体薄膜器件
公开(公告)号：US07538350B2
公开(公告)日：2009-05-26
申请号：US11698864
申请日：2007-01-29
申请人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
发明人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
IPC分类号： H01L29/786
CPC分类号： H01L21/02683 , H01L21/2022 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696
摘要： It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.
摘要翻译：提供一种使用能够防止在TFT沟道区域中形成晶界的激光晶体化方法的半导体器件制造系统的问题，并且进一步防止由于晶界引起的TFT迁移率的明显降低，导通电流降低或截止电流增加。在基板上形成绝缘膜，在绝缘膜上形成半导体膜。由此，优选形成半导体膜中通过激光在结晶期间通过应力集中施加的区域。具体地，在半导体膜上形成条状或矩形凹凸。连续振荡激光沿着条纹凹凸或长轴或短轴方向照射。

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