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21. 发明授权

US06372639B1 Method for constructing interconnects for sub-micron semiconductor devices and the resulting semiconductor devices 失效
标题翻译：用于构建亚微米半导体器件的互连的方法以及由此产生的半导体器件
公开(公告)号：US06372639B1
公开(公告)日：2002-04-16
申请号：US09576836
申请日：2000-05-23
申请人： William Stanton
发明人： William Stanton
IPC分类号： H02L8242
CPC分类号： H01L27/10888 , H01L21/76885 , H01L21/76897 , H01L27/10855 , H01L2924/0002 , Y10S257/905 , Y10S257/906 , Y10S257/908 , H01L2924/00
摘要： A workpiece and method are provided for forming N polysilicon interconnects coupled to N contact openings in a semiconductor device. The workpiece includes an active area and N potential contact openings covered with a dielectric layer, a first through hole etched in the dielectric layer to expose substantially all of the workpiece corresponding to the active area to thereby expose the N contact openings, a monolithic polysilicon plug deposited in the first through hole, and N−1 second through holes etched in the polysilicon plug and disposed between the N contact openings to thereby divide the polysilicon plug into the N polysilicon interconnects, where N is an integer greater than or equal to 2. According to one aspect of the invention, the workpiece includes N−1 conductors traversing the active area, the N contact openings are disposed adjacent to the N−1 conductors, and each of the N contact openings is separated from the other contact openings by one of the N−1 conductors.
摘要翻译：提供了一种工件和方法，用于形成耦合到半导体器件中的N个接触开口的N个多晶硅互连。工件包括有效面积和覆盖有电介质层的N个电势接触开口，在电介质层中蚀刻的第一通孔，以基本上暴露出与有源区相对应的所有工件，从而露出N个接触开口，单片多晶硅插塞沉积在第一通孔中，以及N-1个第二通孔，蚀刻在多晶硅插塞中并且设置在N个接触开口之间，从而将多晶硅插塞分成N个多晶硅互连，其中N是大于或等于2的整数。根据本发明的一个方面，工件包括穿过有源区的N-1个导体，N个接触开口邻近N-1个导体设置，并且N个接触开口中的每一个与其它接触开口分开一个的N-1导体。

22. 发明授权

US08365101B2 Photomask constructions having liners of specified compositions along sidewalls of multi-layered structures 有权
标题翻译：具有沿着多层结构侧壁的具有特定组成的衬垫的光掩模结构
公开(公告)号：US08365101B2
公开(公告)日：2013-01-29
申请号：US13050250
申请日：2011-03-17
申请人： William Stanton , Fei Wang
发明人： William Stanton , Fei Wang
IPC分类号： G06F17/50
CPC分类号： G03F1/00 , G03F1/58
摘要： Some embodiments include methods in which a mathematical representation of a photomask construction is defined, with such representation comprising a plurality of pillars that individually contain a plurality of distinct layers. Each of the layers has two or more characteristic parameters which are optimized through an optimization loop. Subsequently, specifications obtained from the optimization loop are utilized to form actual layers over an actual reticle base. Some embodiments include photomask constructions in which a radiation-patterning topography is across a reticle base, with such topography including multiple pillars that individually contain at least seven distinct layers.
摘要翻译：一些实施例包括定义光掩模结构的数学表示的方法，其中这种表示包括单独包含多个不同层的多个柱。每个层都有两个或更多个通过优化循环优化的特征参数。随后，利用从优化环获得的规格在实际的掩模版基础上形成实际的层。一些实施例包括光掩模结构，其中辐射图案化形貌横跨掩模版基底，其中这种形貌包括单独包含至少七个不同层的多个柱。

23. 发明申请

US20110165506A1 Photomasks and Methods Of Forming Photomasks 有权
标题翻译：光掩模和形成光掩模的方法
公开(公告)号：US20110165506A1
公开(公告)日：2011-07-07
申请号：US13050250
申请日：2011-03-17
申请人： William Stanton , Fei Wang
发明人： William Stanton , Fei Wang
IPC分类号： G03F1/00
CPC分类号： G03F1/00 , G03F1/58
摘要： Some embodiments include methods in which a mathematical representation of a photomask construction is defined, with such representation comprising a plurality of pillars that individually contain a plurality of distinct layers. Each of the layers has two or more characteristic parameters which are optimized through an optimization loop. Subsequently, specifications obtained from the optimization loop are utilized to form actual layers over an actual reticle base. Some embodiments include photomask constructions in which a radiation-patterning topography is across a reticle base, with such topography including multiple pillars that individually contain at least seven distinct layers.
摘要翻译：一些实施例包括定义光掩模结构的数学表示的方法，其中这种表示包括单独包含多个不同层的多个柱。每个层都有两个或更多个通过优化循环优化的特征参数。随后，利用从优化环获得的规格在实际的掩模版基础上形成实际的层。一些实施例包括光掩模结构，其中辐射图案化形貌横跨掩模版基底，其中这种形貌包括单独包含至少七个不同层的多个柱。

24. 发明申请

US20090186283A1 Photomasks and Methods Of Forming Photomasks 有权
标题翻译：光掩模和形成光掩模的方法
公开(公告)号：US20090186283A1
公开(公告)日：2009-07-23
申请号：US12018612
申请日：2008-01-23
申请人： William Stanton , Fei Wang
发明人： William Stanton , Fei Wang
IPC分类号： G03F1/00
CPC分类号： G03F1/00 , G03F1/58
摘要： Some embodiments include methods in which a mathematical representation of a photomask construction is defined, with such representation comprising a plurality of pillars that individually contain a plurality of distinct layers. Each of the layers has two or more characteristic parameters which are optimized through an optimization loop. Subsequently, specifications obtained from the optimization loop are utilized to form actual layers over an actual reticle base. Some embodiments include photomask constructions in which a radiation-patterning topography is across a reticle base, with such topography including multiple pillars that individually contain at least seven distinct layers.
摘要翻译：一些实施例包括定义光掩模结构的数学表示的方法，其中这种表示包括单独包含多个不同层的多个柱。每个层都有两个或更多个通过优化循环优化的特征参数。随后，利用从优化环获得的规格在实际的掩模版基础上形成实际的层。一些实施例包括光掩模结构，其中辐射图案化形貌横跨掩模版基底，其中这种形貌包括单独包含至少七个不同层的多个柱。

25. 发明申请

US20060115748A1 Sidelobe suppression in radiated patterning 有权
标题翻译：辐射图案中的旁瓣抑制
公开(公告)号：US20060115748A1
公开(公告)日：2006-06-01
申请号：US11336229
申请日：2006-01-20
申请人： William Stanton , Husayn Alvarez-Gomariz
发明人： William Stanton , Husayn Alvarez-Gomariz
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F1/36
摘要： Methods and apparatus for sidelobe suppression in a radiation patterning tool. Sidelobe artifacts are mitigated by identifying elements as a function of the radiation wavelength for forming desired profiles on a semiconductor wafer. Diffraction rings are calculated about each of the elements to identify sidelobe interference zones and intersections of diffraction rings are located. Sidelobe inhibitors are located at the identified locations. A method for forming a mask with the addition of sidelobe inhibitors as well as method for determining the location of placement of sidelobe inhibitors is also disclosed.
摘要翻译：辐射图案工具中旁瓣抑制的方法和装置。通过将元件识别为用于在半导体晶片上形成所需轮廓的辐射波长的函数来减轻旁瓣伪影。计算每个元素的衍射环以识别旁瓣干涉区，并且定位衍射环的交点。旁瓣抑制剂位于识别的位置。还公开了添加旁瓣抑制剂形成掩模的方法以及用于确定旁瓣抑制剂的放置位置的方法。

26. 发明申请

US20060110657A1 Battery assembly for use in an uninterruptible power supply system and method 审中-公开
标题翻译：电池组件用于不间断电源系统和方法
公开(公告)号：US20060110657A1
公开(公告)日：2006-05-25
申请号：US11273157
申请日：2005-11-14
申请人： William Stanton , Nathan Woodard
发明人： William Stanton , Nathan Woodard
IPC分类号： H01M10/50 , H01M2/10
CPC分类号： H01M2/1094 , H01M2/1072 , H01M10/121 , H01M10/613 , H01M10/615 , H01M10/627 , H01M10/63 , H01M10/653 , H01M10/6551 , H01M10/6553 , H01M10/6554 , H01M10/6571 , H01M10/6572 , H01M10/658
摘要： A battery includes a housing and at least one exposed terminal. A thermally conductive mechanism is positioned outside the housing but in close proximity to the terminal, defining a thermally conductive path from the terminal to a point further from the terminal. The mechanism can use thermally conductive brackets that may be electrically isolated from the battery terminals. A heat sink may be positioned to receive heat from the bracket. A heat pump can cooperate with the thermally conductive mechanism and the heat sink for aiding in the movement of heat. A heater can be positioned within the housing for heating the inside of the housing. The battery can be encased by an arrangement of vacuum insulated panels in a way which provides for forming an external electrical connection with the battery terminals. A backup battery assembly and associated uninterruptible power system are described for powering a primary load.
摘要翻译：电池包括壳体和至少一个暴露的端子。导热机构位于壳体的外部，但是紧邻端子，限定了从端子到远离端子的点的导热路径。该机构可以使用可与电池端子电隔离的导热支架。散热器可以被定位成从支架接收热量。热泵可以与导热机构和散热器配合以帮助热量运动。加热器可以定位在壳体内以加热壳体的内部。电池可以通过真空绝热面板的布置来封装，其方式是形成与电池端子的外部电连接。描述了备用电池组件和相关联的不间断电源系统，用于为主负载供电。

27. 发明申请

US20050008951A1 Methods of forming patterned reticles 失效
公开(公告)号：US20050008951A1
公开(公告)日：2005-01-13
申请号：US10912031
申请日：2004-08-04
申请人： H. Dulman , William Stanton , John Futrell
发明人： H. Dulman , William Stanton , John Futrell
IPC分类号： G03C5/00 , G03F1/00 , G03F1/36 , G03F9/00 , G06F17/50
CPC分类号： G03F1/36
摘要： The invention includes methods of forming patterned reticles. Design features can be introduced into a layout for a reticle prior to optical proximity correction, and then removed prior to taping a pattern onto the reticle. Design features can alternatively, or additionally, be introduced after optical proximity correction and asymmetrically relative to one or more parts of a reticle pattern. The introduced features can subsequently be taped to the reticle as part of the formation of the patterned reticle.

28. 发明授权

US06465138B1 Method for designing and making photolithographic reticle, reticle, and photolithographic process 失效
标题翻译：光刻掩模版，光罩和光刻工艺的设计和制造方法
公开(公告)号：US06465138B1
公开(公告)日：2002-10-15
申请号：US09377076
申请日：1999-08-19
申请人： William Stanton
发明人： William Stanton
IPC分类号： G03F900
CPC分类号： G03F1/32
摘要： There are provided methods for making a reticle for use in a photolithography process, comprising forming at least two printable features on a reticle substrate, and forming at least one sub-resolution connecting structure on the reticle substrate, the sub-resolution connecting structure connecting at least two of the printable reticle features, as well as reticles formed according to such methods. In addition, there are provided computer-implemented methods for designing such a reticle, as well as computer readable storage media, computer systems and computer programs for use in making such reticles. In addition, there are provided photolithographic processes using such a reticle. The reticle may be a binary mask, a phase shift mask, or an attenuated phase shift mask.
摘要翻译：提供了用于制造用于光刻工艺中的掩模版的方法，包括在掩模版基板上形成至少两个可印刷的特征，并在掩模版基板上形成至少一个分辨率连接结构，至少两个可印刷的掩模版特征，以及根据这种方法形成的掩模版。此外，提供了用于设计这种掩模版的计算机实现的方法，以及用于制作这种掩模版的计算机可读存储介质，计算机系统和计算机程序。此外，提供了使用这种掩模版的光刻工艺。掩模版可以是二进制掩模，相移掩模或衰减相移掩模。

29. 发明授权

US06369432B1 Enhanced capacitor shape 失效
标题翻译：增强电容器形状
公开(公告)号：US06369432B1
公开(公告)日：2002-04-09
申请号：US09028050
申请日：1998-02-23
申请人： Mark Jost , William Stanton , Christophe Pierrat
发明人： Mark Jost , William Stanton , Christophe Pierrat
IPC分类号： H01L2976
CPC分类号： H01L27/10852 , H01L21/3143 , H01L21/3212 , H01L27/10808 , H01L27/10855 , H01L28/84 , H01L28/91
摘要： A capacitor having a pear-shaped cross section is provided. In one embodiment, the pear-shaped capacitor is a stacked container capacitor used in a dynamic random access memory circuit with a bit-line-over- capacitor construction. Each capacitor is at a minimum bit line distance from all adjacent bit line contacts, and also at a minimum capacitor distance from all adjacent capacitors along a substantial portion of its perimeter.
摘要翻译：提供具有梨形截面的电容器。在一个实施例中，梨形电容器是用于具有位线电容器结构的动态随机存取存储器电路中的堆叠容器电容器。每个电容器处于与所有相邻位线触点的最小位线距离，并且在与其周边的实质部分的所有相邻电容器的最小电容器距离处。

30. 发明授权

US06258489B1 Mask design utilizing dummy features 有权
标题翻译：使用虚拟功能的面具设计
公开(公告)号：US06258489B1
公开(公告)日：2001-07-10
申请号：US09349983
申请日：1999-07-09
申请人： William Stanton , Vishnu K. Agarwal
发明人： William Stanton , Vishnu K. Agarwal
IPC分类号： G03F900
CPC分类号： G03F1/36
摘要： A photolithography mask includes dummy features adjacent to features to be printed (printable features). The dummy features are smaller than the resolution (which is approximately equal to the critical dimension) of the photolithography system so that the resist is not fully developed in the areas of the dummy features. Thus, the dummy features will not be etched into the surface below. However, the proximity effects caused by the dummy features will act to suppress sidelobes and/or increase the depth of focus. Dummy features may be provided adjacent to both isolated and densely-packed printable features, thereby equalizing the proximity effects acting on both types features so that isolated printable features will print approximately the same as densely-packed printable features and the printability of both isolated and closely-packed features will be enhanced. The size and shape of the dummy features may be adjusted for the particular application.
摘要翻译：光刻掩模包括与要打印的特征相邻的虚拟特征（可打印特征）。虚拟特征小于光刻系统的分辨率（其大致等于临界尺寸），使得抗蚀剂在虚拟特征的区域中未完全显影。因此，虚拟特征将不会被蚀刻到下面的表面中。然而，由虚拟特征引起的邻近效应将起到抑制旁瓣和/或增加焦点深度的作用。可以在隔离和密集打印的特征附近提供虚拟特征，从而平衡作用在两种类型特征上的邻近效应，使得可隔离的可打印特征将打印出与密集打印的可印刷特征大致相同的印刷特性和两者的印刷性包装功能将得到增强。虚拟特征的尺寸和形状可以针对特定应用进行调整。

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