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1. 发明授权

US07549142B2 Method and device for checking lithography data 有权
标题翻译：用于检查光刻数据的方法和装置
公开(公告)号：US07549142B2
公开(公告)日：2009-06-16
申请号：US11423075
申请日：2006-06-08
申请人： Husayn Alvarez-Gomariz , John R. C. Futrell
发明人： Husayn Alvarez-Gomariz , John R. C. Futrell
IPC分类号： G06F17/50 , G06F17/10 , G06F19/00 , G03F1/00 , G21K5/00 , G06T17/00
CPC分类号： G03F1/36 , Y10S715/964
摘要： Devices and methods are provided that include advantages such as the ability to identify sizes, shapes and locations of frequently unwanted additional features that occur as a result of photolithographic interference. The additional feature information is obtained through use of simulation methods with reduced processing time or solving a system of equations. This allows a user to quickly find information about additional feature printing before the features are printed, and before the reticle is made.
摘要翻译：提供的装置和方法包括诸如识别作为光刻干涉的结果而出现的频繁不想要的附加特征的尺寸，形状和位置的能力的优点。通过使用减少处理时间的模拟方法或求解方程组来获得附加特征信息。这允许用户在打印功能之前，以及在制作掩模版之前，快速查找有关附加功能打印的信息。

2. 发明授权

US07549143B2 Method and device for checking lithography data 有权
公开(公告)号：US07549143B2
公开(公告)日：2009-06-16
申请号：US11423082
申请日：2006-06-08
申请人： Husayn Alvarez-Gomariz , John R. C. Futrell
发明人： Husayn Alvarez-Gomariz , John R. C. Futrell
IPC分类号： G06F17/50 , G06F19/00 , G03F1/00 , G21K5/00
CPC分类号： G03F1/36 , Y10S715/964
摘要： Devices and methods are provided that include advantages such as the ability to identify sizes, shapes and locations of frequently unwanted additional features that occur as a result of photolithographic interference. The additional feature information is obtained through use of simulation methods with reduced processing time or solving a system of equations. This allows a user to quickly find information about additional feature printing before the features are printed, and before the reticle is made.

3. 发明授权

US07273684B2 Mask having transmissive elements and a common sidelobe inhibitor for sidelobe suppression in radiated patterning 有权
标题翻译：掩模具有透射元件和共同的旁瓣抑制剂，用于辐射图案化中的旁瓣抑制
公开(公告)号：US07273684B2
公开(公告)日：2007-09-25
申请号：US11336229
申请日：2006-01-20
申请人： William A. Stanton , Husayn Alvarez-Gomariz
发明人： William A. Stanton , Husayn Alvarez-Gomariz
IPC分类号： G03F1/00
CPC分类号： G03F1/36
摘要： A mask having transmissive elements and one or more sidelobe inhibitors for sidelobe suppression during a radiation-patterning process is provided. Sidelobe artifacts are mitigated by identifying elements as a function of the radiation wavelength for forming desired profiles on a semiconductor wafer. A diffraction rings is calculated around each of the elements to identify sidelobe interference zones and intersections of diffraction rings are located. When a guard ring around one of the intersections Sidelobe inhibitor is located at the a common sidelobe common overlap region of the guard rings. A method for forming a mask with the addition of sidelobe inhibitors as well as a method for determining the location of placement of sidelobe inhibitors is also disclosed.
摘要翻译：提供了具有透射元件的掩模和用于在辐射图案化工艺期间旁瓣抑制的一个或多个旁瓣抑制剂。通过将元件识别为用于在半导体晶片上形成所需轮廓的辐射波长的函数来减轻旁瓣伪影。围绕每个元素计算衍射环以识别旁瓣干涉区，并且定位衍射环的交点。当保护环围绕一个交叉点旁瓣抑制剂位于保护环的共同旁瓣共同重叠区域时。还公开了添加旁瓣抑制剂形成掩模的方法以及用于确定旁瓣抑制剂的放置位置的方法。

4. 发明授权

US07276315B2 Methods for generating or designing sidelobe inhibitors for radiation patterning tools 有权
标题翻译：用于产生或设计用于辐射图案工具的旁瓣抑制剂的方法
公开(公告)号：US07276315B2
公开(公告)日：2007-10-02
申请号：US10609097
申请日：2003-06-27
申请人： William A. Stanton , Husayn Alvarez-Gomariz
发明人： William A. Stanton , Husayn Alvarez-Gomariz
IPC分类号： G03F1/00 , G06F17/50
CPC分类号： G03F1/36
摘要： Design methods and a computer-readable medium having computer-executable instructions thereon for sidelobe suppression in a radiation-patterning tool or mask. Sidelobe artifacts are mitigated by identifying elements as a function of the radiation wavelength for forming desired profiles on a semiconductor wafer. A diffraction ring is calculated around each of the elements to identify sidelobe interference zones and intesections of diffraction rings are located. When a guard ring around one of the intersections would otherwise overlap with a guard ring around another one of the intersections, a common sidelobe inhibitor is located at the common overlap region of the guard rings. A method for forming a mask with the addition of sidelobe inhibitors as well as a method for determining the location of placement of sidelobe inhibitors is also disclosed.
摘要翻译：设计方法和计算机可读介质，其上具有用于辐射图案化工具或掩模中的旁瓣抑制的计算机可执行指令。通过将元件识别为用于在半导体晶片上形成所需轮廓的辐射波长的函数来减轻旁瓣伪影。围绕每个元件计算衍射环，以识别旁瓣干涉区域，并设置衍射环的内部。当围绕其中一个十字路口的保护环将与另一个交叉点处的保护环重叠时，常见的旁瓣抑制剂位于保护环的公共重叠区域。还公开了添加旁瓣抑制剂形成掩模的方法以及用于确定旁瓣抑制剂的放置位置的方法。

5. 发明申请

US20060235663A1 METHOD AND DEVICE FOR CHECKING LITHOGRAPHY DATA 有权
标题翻译：用于检查LITHOGRAPHY数据的方法和装置
公开(公告)号：US20060235663A1
公开(公告)日：2006-10-19
申请号：US11423075
申请日：2006-06-08
申请人： Husayn Alvarez-Gomariz , John Futrell
发明人： Husayn Alvarez-Gomariz , John Futrell
IPC分类号： G06F17/10 , G06F7/60
CPC分类号： G03F1/36 , Y10S715/964
摘要： Devices and methods are provided that include advantages such as the ability to identify sizes, shapes and locations of frequently unwanted additional features that occur as a result of photolithographic interference. The additional feature information is obtained through use of simulation methods with reduced processing time or solving a system of equations. This allows a user to quickly find information about additional feature printing before the features are printed, and before the reticle is made.
摘要翻译：提供的装置和方法包括诸如识别作为光刻干涉的结果而出现的频繁不想要的附加特征的尺寸，形状和位置的能力的优点。通过使用减少处理时间的模拟方法或求解方程组来获得附加特征信息。这允许用户在打印功能之前，以及在制作掩模版之前，快速查找有关附加功能打印的信息。

6. 发明申请

US20060234140A1 METHOD AND DEVICE FOR CHECKING LITHOGRAPHY DATA 有权
公开(公告)号：US20060234140A1
公开(公告)日：2006-10-19
申请号：US11423082
申请日：2006-06-08
申请人： Husayn Alvarez-Gomariz , John Futrell
发明人： Husayn Alvarez-Gomariz , John Futrell
IPC分类号： G06F17/50 , G03F1/00 , G21K5/00 , G06K9/00
CPC分类号： G03F1/36 , Y10S715/964
摘要： Devices and methods are provided that include advantages such as the ability to identify sizes, shapes and locations of frequently unwanted additional features that occur as a result of photolithographic interference. The additional feature information is obtained through use of simulation methods with reduced processing time or solving a system of equations. This allows a user to quickly find information about additional feature printing before the features are printed, and before the reticle is made.

7. 发明授权

US07096452B2 Method and device for checking lithography data 有权
标题翻译：用于检查光刻数据的方法和装置
公开(公告)号：US07096452B2
公开(公告)日：2006-08-22
申请号：US10609153
申请日：2003-06-24
申请人： Husayn Alvarez-Gomariz , John R. C. Futrell
发明人： Husayn Alvarez-Gomariz , John R. C. Futrell
IPC分类号： G06F17/50 , G06K9/46
CPC分类号： G03F1/36 , Y10S715/964
摘要： Devices and methods are provided that include advantages such as the ability to identify sizes, shapes and locations of frequently unwanted additional features that occur as a result of photolithographic interference. The additional feature information is obtained through use of simulation methods with reduced processing time or solving a system of equations. This allows a user to quickly find information about additional feature printing before the features are printed, and before the reticle is made. In one example, a portion of a region such as a semiconductor lithography pattern is subtracted from consideration in identifying potential optical interactions. In one example, a ring-like region remains and is analyzed.
摘要翻译：提供的装置和方法包括诸如识别作为光刻干涉的结果而出现的频繁不想要的附加特征的尺寸，形状和位置的能力的优点。通过使用减少处理时间的模拟方法或求解方程组来获得附加特征信息。这允许用户在打印功能之前，以及在制作掩模版之前，快速查找有关附加功能打印的信息。在一个示例中，在识别潜在的光学相互作用时，从考虑中减去诸如半导体光刻图案的区域的一部分。在一个示例中，环状区域保留并被分析。

8. 发明申请

US20060115748A1 Sidelobe suppression in radiated patterning 有权
标题翻译：辐射图案中的旁瓣抑制
公开(公告)号：US20060115748A1
公开(公告)日：2006-06-01
申请号：US11336229
申请日：2006-01-20
申请人： William Stanton , Husayn Alvarez-Gomariz
发明人： William Stanton , Husayn Alvarez-Gomariz
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F1/36
摘要： Methods and apparatus for sidelobe suppression in a radiation patterning tool. Sidelobe artifacts are mitigated by identifying elements as a function of the radiation wavelength for forming desired profiles on a semiconductor wafer. Diffraction rings are calculated about each of the elements to identify sidelobe interference zones and intersections of diffraction rings are located. Sidelobe inhibitors are located at the identified locations. A method for forming a mask with the addition of sidelobe inhibitors as well as method for determining the location of placement of sidelobe inhibitors is also disclosed.
摘要翻译：辐射图案工具中旁瓣抑制的方法和装置。通过将元件识别为用于在半导体晶片上形成所需轮廓的辐射波长的函数来减轻旁瓣伪影。计算每个元素的衍射环以识别旁瓣干涉区，并且定位衍射环的交点。旁瓣抑制剂位于识别的位置。还公开了添加旁瓣抑制剂形成掩模的方法以及用于确定旁瓣抑制剂的放置位置的方法。

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