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21. 发明授权

US06168962A Method of manufacturing a semiconductor light emitting device 失效
标题翻译：制造半导体发光器件的方法
公开(公告)号：US06168962A
公开(公告)日：2001-01-02
申请号：US09012193
申请日：1998-01-23
申请人： Norikazu Itoh , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Tsuyoshi Tsutsui
发明人： Norikazu Itoh , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Tsuyoshi Tsutsui
IPC分类号： H01L21302
CPC分类号： H01L33/0095
摘要： Disclosed is a method of manufacturing a semiconductor light emitting device. Semiconductor overlying layers are formed on a substrate in a state of a wafer so that a light emitting area is provided therein. The semiconductor overlying layers includes first and second conductivity type layers. Part of the semiconductor overlying layers including the first conductivity type layer on a surface thereof is removed so as to expose part of the second conductivity type layer. Electrodes are formed, for each chip, respectively in connection with the surface of the first conductivity type layer and the surface of the exposed second conductivity type layer. The wafer is divided into individual chips. The exposed areas of the second conductivity type semiconductor layer is provided only part of a peripheral area of the chip so that the first conductivity type semiconductor layer is directly separated during dividing the wafer into individual chips. With such a method, when dividing a wafer into chips, the inefficiency of the space (etched areas do not contribute to light emission) is eliminated in etch-removing the semiconductor overlying layers at areas to be divided, thereby improving chip yield and hence reducing cost.
摘要翻译：公开了半导体发光器件的制造方法。在晶片的状态下在基板上形成半导体覆盖层，以便在其中提供发光区域。半导体覆盖层包括第一和第二导电类型层。除去包括其表面上的第一导电类型的半导体覆盖层的一部分，以暴露部分第二导电类型层。对于每个芯片，分别与第一导电类型层的表面和暴露的第二导电类型层的表面分别形成电极。晶片分为单个芯片。第二导电类型半导体层的暴露区域仅提供芯片的周边区域的一部分，使得在将晶片分成单个芯片期间，第一导电类型半导体层被直接分离。通过这样的方法，当将晶片分成芯片时，在要分割的区域上的半导体覆盖层的蚀刻去除中消除了空间（蚀刻区域对光发射没有贡献）的低效率，从而提高了芯片产量并因此降低了成本。

22. 发明授权

US5939735A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US5939735A
公开(公告)日：1999-08-17
申请号：US993091
申请日：1997-12-18
申请人： Tsuyoshi Tsutsui , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Norikazu Itoh
发明人： Tsuyoshi Tsutsui , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Norikazu Itoh
IPC分类号： H01L33/10 , H01L33/32 , H01L33/46 , H01S5/00 , H01S5/323 , H01L33/00
CPC分类号： H01L33/46 , H01L33/007 , H01L2924/0002 , H01L2933/0083
摘要： A semiconductor light emitting device includes a substrate and semiconductor overlying layers formed on the substrate. A light emitting layer is formed in the semiconductor layer so as to emit light. The substrate is transmittable of the light emitted by the light emitting layer. A light reflecting layer is formed on a part of a back surface of the substrate. As a result, a semiconductor light emitting device is obtainable by easily dividing a wafer having thereon a light emitting film through recognizing, from a wafer back side, semiconductor layer chip pattern formed overlying the main surface of the wafer.
摘要翻译：半导体发光器件包括衬底和形成在衬底上的半导体覆盖层。在半导体层中形成发光层以发光。基板可透射由发光层发射的光。在基板的背面的一部分上形成光反射层。结果，半导体发光器件可以通过从晶片背面识别形成在晶片的主表面上的半导体层芯片图案容易地分割其上具有发光膜的晶片而获得。

23. 发明授权

US5798536A Light-emitting semiconductor device and method for manufacturing the same 失效
标题翻译：发光半导体器件及其制造方法
公开(公告)号：US5798536A
公开(公告)日：1998-08-25
申请号：US785037
申请日：1997-01-17
申请人： Tsuyoshi Tsutsui
发明人： Tsuyoshi Tsutsui
IPC分类号： H01L33/38 , H01L33/40 , H01L33/62 , H01L33/00
CPC分类号： H01L33/38 , H01L24/73 , H01L33/62 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01047 , H01L2924/01056 , H01L2924/01057 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/12041 , H01L2924/3025 , H01L33/385 , H01L33/40
摘要： Desclosed is a light-emitting semiconductor device has a light-emitting chip. The light-emitting chip has an insulator substrate and a semiconductor layer formed overlying the substrate. First and second conductivity type regions are formed in the semiconductor layer. The second conductivity type region has an exposed surface formed by removing part of the semiconductor layer. A top electrode is formed on a surface of the first conductivity type region. An end electrode is formed on an exposed surface of the second conductivity type region. A first electrode lead is mounted with the light-emitting chip and has a projecting portion extending along an adjacent surface of the light-emitting chip. A second electrode lead extends parallel to the first electrode lead. A conductor wire is electrically connected between the second electrode lead and the top electrode. The end electrode and the projecting portion are electrically connected through an electrically-conductive resin.
摘要翻译：被封闭的是具有发光芯片的发光半导体器件。发光芯片具有绝缘体基板和形成在基板上的半导体层。第一和第二导电类型区域形成在半导体层中。第二导电类型区域具有通过去除半导体层的一部分而形成的暴露表面。在第一导电类型区域的表面上形成顶部电极。端电极形成在第二导电类型区域的暴露表面上。第一电极引线安装有发光芯片，并且具有沿着发光芯片的相邻表面延伸的突出部分。第二电极引线平行于第一电极引线延伸。导体线电连接在第二电极引线和顶部电极之间。端电极和突出部分通过导电树脂电连接。

24. 发明授权

US06197609B1 Method for manufacturing semiconductor light emitting device 失效
标题翻译：半导体发光元件的制造方法
公开(公告)号：US06197609B1
公开(公告)日：2001-03-06
申请号：US09391625
申请日：1999-09-07
申请人： Tsuyoshi Tsutsui , Masayuki Sonobe , Norikazu Ito
发明人： Tsuyoshi Tsutsui , Masayuki Sonobe , Norikazu Ito
IPC分类号： H01L2100
CPC分类号： H01L33/0095
摘要： Semiconductor layers forming a light emitting layer and including an n-type layer and p-type layer are formed onto a substrate, then the n-type layer is exposed by removing a part of the laminated semiconductor layers. p-side electrode and n-side electrode are then respectively formed on the p-type layer on the surface of the laminated semiconductor layers and the exposed n-type layer, respectively in an electrically connected manner, followed by dicing of the substrate from the exposed n-type layer to the substrate at portions at which breaking of the substrate is performed. Then a protection film is provided on the entire surface of the laminated semiconductor layers as to expose the p-side and n-side electrodes, and breaking of the substrate is performed at dicing portions into individual chips. Consequently, semiconductor light emitting devices can be obtained by breaking the wafer into individual chips without etching the protection film and without damaging the protection film at the time of breaking. Also, the light emitting devices can be improved.
摘要翻译：形成发光层并且包括n型层和p型层的半导体层形成在衬底上，然后通过去除一部分层叠半导体层而露出n型层。 p侧电极和n侧电极分别以电连接的方式分别形成在层叠半导体层的表面上的p型层和暴露的n型层上，接着从基板在进行基板断裂的部分，将裸露的n型层涂覆在基板上。然后在层叠半导体层的整个表面上设置保护膜，以露出p侧和n侧电极，并且在切割部分将基板的断裂进行到单独的芯片。因此，半导体发光器件可以通过将晶片分解为单独的芯片而不蚀刻保护膜并且在破坏时不损坏保护膜来获得。而且，可以改善发光器件。

25. 发明授权

US06194241B1 Semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06194241B1
公开(公告)日：2001-02-27
申请号：US09059388
申请日：1998-04-14
申请人： Tsuyoshi Tsutsui , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Norikazu Itoh
发明人： Tsuyoshi Tsutsui , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Norikazu Itoh
IPC分类号： H01L2100
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/0262
摘要： A semiconductor layered portion is formed of a gallium-nitride semiconductor overlying a substrate and having an n-type layer and a p-type layer to form a light emitting layer having a pn junction or a doublehetero junction. A gradient layer is provided at an interfacial portion between an lower layer and an upper layer of the semiconductor layered portion, wherein the gradient layer has a composition varied from a composition from said lower layer to a composition of the upper layer. With this structure, a semiconductor light emitting device which is excellent in light emitting efficiency is provided by reducing crystal lattice mismatch between semiconductor layers formed different in lattice constant on a substrate.
摘要翻译：半导体层叠部分由覆盖在衬底上并具有n型层和p型层的氮化镓半导体形成，以形成具有pn结或双重结的发光层。梯度层设置在半导体层叠部分的下层和上层之间的界面部分处，其中梯度层具有从所述下层的组成和上层的组成不同的组成。利用这种结构，通过减少在衬底上形成的晶格常数不同的半导体层之间的晶格失配，提供了发光效率优异的半导体发光器件。

26. 发明授权

US06191437B1 Semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06191437B1
公开(公告)日：2001-02-20
申请号：US09381285
申请日：1999-09-21
申请人： Masayuki Sonobe , Shunji Nakata , Tsuyoshi Tsutsui , Norikazu Itoh
发明人： Masayuki Sonobe , Shunji Nakata , Tsuyoshi Tsutsui , Norikazu Itoh
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/007
摘要： An n-type layer (3) and a p-type layer (5) which are made of a gallium nitride based compound semiconductor are provided on a substrate (1) so that a light emitting layer forming portion (10) for forming a light emitting layer is provided. A gallium nitride based compound semiconductor layer containing oxygen is used for at least one layer of the light emitting layer forming portion (10). In the case where a buffer layer (2) made of the gallium nitride based compound semiconductor or aluminum nitride is provided between the substrate (1) and the light emitting layer forming portion (10), the buffer layer (2) and/or at least one layer of the light emitting layer forming portion (10) may contain oxygen. By such a structure, crystal defects of the semiconductor layer of the light emitting layer forming portion (10) can be decreased and a luminance can highly be enhanced. Thus, it is possible to obtain a blue color type semiconductor light emitting device having a high luminance.
摘要翻译：在基板（1）上设置由氮化镓类化合物半导体构成的n型层（3）和p型层（5），使得形成光的发光层形成部（10）提供发光层。含有氧的氮化镓系化合物半导体层用于至少一层发光层形成部（10）。在基板（1）和发光层形成部分（10）之间设置由氮化镓基化合物半导体或氮化铝制成的缓冲层（2）的情况下，缓冲层（2）和/或在发光层形成部（10）的至少一层可以含有氧。通过这样的结构，可以减少发光层形成部分（10）的半导体层的晶体缺陷，并且可以高度提高亮度。因此，可以获得具有高亮度的蓝色型半导体发光器件。

27. 发明授权

US6060730A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US6060730A
公开(公告)日：2000-05-09
申请号：US110940
申请日：1998-07-07
申请人： Tsuyoshi Tsutsui
发明人： Tsuyoshi Tsutsui
IPC分类号： H01L21/28 , H01L33/32 , H01L33/40 , H01L29/78
CPC分类号： H01L33/32 , H01L33/025
摘要： There is provided a semiconductor laminated portion in which gallium nitride based compound semiconductor layers including an n-type layer and a p-type layer are laminated for forming an emitting layer on a substrate. Then, an n-side electrode and a p-side electrode are provided so as to be electrically connected to the n-type layer and p-type layer of the semiconductor laminated portion, respectively. The n-type layer includes at least an n-type first layer and an n.sup.+ -type second layer so that the carrier concentration of the portion to be provided with the n-side electrode is higher than the carrier concentration of the portion in contact with the emitting layer. Consequently, the ohmic contact characteristics of the n-type layer and n-side electrode are improved to reduce a forward voltage, resulting in a semiconductor light emitting device with high light emitting efficiency.
摘要翻译：提供了一种半导体层叠部分，其中层叠有包括n型层和p型层的氮化镓基化合物半导体层，以在衬底上形成发光层。然后，分别设置n侧电极和p侧电极，以与半导体层叠部分的n型层和p型层电连接。 n型层至少包括n型第一层和n +型第二层，使得设置有n侧电极的部分的载流子浓度高于与接触的部分的载流子浓度发光层。因此，提高了n型层和n侧电极的欧姆接触特性以减小正向电压，从而导致发光效率高的半导体发光器件。

28. 发明授权

US08889437B2 Light-emitting device, light-emitting device package, method of manufacturing light-emitting device, and method of packaging light-emitting device 有权
标题翻译：发光装置，发光装置封装，发光装置的制造方法以及封装发光装置的方法
公开(公告)号：US08889437B2
公开(公告)日：2014-11-18
申请号：US13297809
申请日：2011-11-16
申请人： Tsuyoshi Tsutsui
发明人： Tsuyoshi Tsutsui
IPC分类号： H01L21/00 , H01L33/50
CPC分类号： H01L33/507 , H01L33/486 , H01L33/50 , H01L33/501 , H01L33/502 , H01L33/505 , H01L2224/48091 , H01L2224/48247 , H01L2224/73204 , H01L2224/8592 , H01L2933/0041 , H01L2924/00014
摘要： A light-emitting device including a phosphor layer, a light-emitting device package employing the light-emitting device, a method of manufacturing the light-emitting device, and a method of packaging the light-emitting device. The light-emitting device includes: a light-transmissive substrate having a top surface, a bottom surface, and side surfaces; a light-emitting unit formed on the top surface of the light-transmissive substrate; and a phosphor layer covering all the side surfaces of the light-transmissive substrate. According to the present invention, chromaticity inferiorities of light emitted from side surfaces of a substrate may be reduced.
摘要翻译：包括荧光体层的发光器件，使用发光器件的发光器件封装，制造发光器件的方法以及封装发光器件的方法。发光装置包括：具有顶表面，底表面和侧表面的透光基底; 形成在所述透光性基板的上表面的发光单元; 以及覆盖透光性基板的所有侧面的荧光体层。根据本发明，可以减少从衬底的侧表面发射的光的色度劣化。

29. 发明授权

US08735935B2 Small size light emitting device and manufacturing method of the same 有权
标题翻译：小尺寸发光装置及其制造方法相同
公开(公告)号：US08735935B2
公开(公告)日：2014-05-27
申请号：US13070014
申请日：2011-03-23
申请人： Tomio Inoue , Tsuyoshi Tsutsui , Jae Joon Yoon , Ok Hee Shin
发明人： Tomio Inoue , Tsuyoshi Tsutsui , Jae Joon Yoon , Ok Hee Shin
IPC分类号： H01L33/00
CPC分类号： H01L33/52 , B29C39/42 , H01L24/97 , H01L33/0095 , H01L33/483 , H01L2224/48091 , H01L2224/48465 , H01L2924/12035 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： There is provided a light emitting device including: a package body having first and second circumferential surfaces and a plurality of side surfaces formed therebetween, the package body defined into first and second level areas including the first and second circumferential surfaces, respectively; first and second external terminal blocks each having an electrical contact part; an LED chip disposed between the first and second external terminal blocks in the first level area and having an electrode surface where first and second electrodes are formed; and wires electrically connected to first and second electrodes of the LED chip to the electrical contact parts of the first and second external terminal blocks, respectively.
摘要翻译：提供了一种发光器件，包括：封装体，其具有第一和第二周向表面和形成在其间的多个侧表面，所述封装体分别限定在包括第一和第二周向表面的第一和第二水平区域中; 每个具有电接触部分的第一和第二外部接线端子; LED芯片，设置在第一电平区域中的第一和第二外部端子块之间，并且具有形成第一和第二电极的电极表面; 以及分别与LED芯片的第一和第二电极电连接到第一和第二外部端子块的电接触部分的导线。

30. 发明申请

US20120184056A1 METHOD AND APPARATUS FOR MANUFACTURING WHITE LIGHT-EMITTING DEVICE 有权
标题翻译：制造白色发光装置的方法和装置
公开(公告)号：US20120184056A1
公开(公告)日：2012-07-19
申请号：US13338678
申请日：2011-12-28
申请人： Cheol-jun YOO , Seong-jae Hong , Tsuyoshi Tsutsui , Shin-kun Kim
发明人： Cheol-jun YOO , Seong-jae Hong , Tsuyoshi Tsutsui , Shin-kun Kim
IPC分类号： H01L33/50 , B05C11/00 , B05C13/02
CPC分类号： B05C1/027 , H01L21/6715 , H01L21/6838 , H01L33/0079 , H01L33/50 , H01L2933/0041
摘要： Methods and apparatus for manufacturing a semiconductor light-emitting device that emits white light by forming a phosphor layer on an emission surface of the semiconductor light-emitting device at a wafer-level. The method includes: forming a plurality of light-emitting devices on a wafer; thinning the wafer, on which the plurality of light-emitting devices are formed; disposing the thinned wafer on a carrier film; and forming a phosphor layer on an emission surface of the plurality of light-emitting devices on the wafer.
摘要翻译：制造通过在晶片级在半导体发光元件的发射表面上形成荧光层而发出白光的半导体发光器件的制造方法和装置。该方法包括：在晶片上形成多个发光器件; 使形成有多个发光装置的晶片变薄; 将薄的晶片设置在载体膜上; 以及在所述晶片上的所述多个发光器件的发射表面上形成荧光体层。

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