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21. 发明申请

US20080290359A1 Light emitting device and manufacturing method of the same 审中-公开
标题翻译：发光器件及其制造方法相同
公开(公告)号：US20080290359A1
公开(公告)日：2008-11-27
申请号：US12081888
申请日：2008-04-23
申请人： Tomio Inoue , Tsuyoshi Tsutsui , Jae Joon Yoon , Ok Hee Shin
发明人： Tomio Inoue , Tsuyoshi Tsutsui , Jae Joon Yoon , Ok Hee Shin
IPC分类号： H01L33/00
CPC分类号： H01L33/52 , B29C39/42 , H01L24/97 , H01L33/0095 , H01L33/483 , H01L2224/48091 , H01L2224/48465 , H01L2924/12035 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： There is provided a light emitting device including: a package body having first and second circumferential surfaces and a plurality of side surfaces formed therebetween, the package body defined into first and second level areas including the first and second circumferential surfaces, respectively; first and second external terminal blocks each having an electrical contact part; an LED chip disposed between the first and second external terminal blocks in the first level area and having an electrode surface where first and second electrodes are formed; and wires electrically connected to first and second electrodes of the LED chip to the electrical contact parts of the first and second external terminal blocks, respectively.
摘要翻译：提供了一种发光器件，包括：封装体，其具有第一和第二周向表面和形成在其间的多个侧表面，所述封装体分别限定在包括第一和第二周向表面的第一和第二水平区域中; 每个具有电接触部分的第一和第二外部接线端子; LED芯片，设置在第一电平区域中的第一和第二外部端子块之间，并且具有形成第一和第二电极的电极表面; 以及分别与LED芯片的第一和第二电极电连接到第一和第二外部端子块的电接触部分的导线。

22. 发明授权

US06610589B2 Semiconductor light emitting device and method of manufacturing the same 有权
公开(公告)号：US06610589B2
公开(公告)日：2003-08-26
申请号：US10163428
申请日：2002-06-07
申请人： Tsuyoshi Tsutsui
发明人： Tsuyoshi Tsutsui
IPC分类号： H01L2128
CPC分类号： H01L33/38 , H01L24/45 , H01L2224/05073 , H01L2224/05166 , H01L2224/05644 , H01L2224/45144 , H01L2224/48463 , H01L2224/48644 , H01L2224/49107 , H01L2924/01012 , H01L2924/01013 , H01L2924/01028 , H01L2924/01079 , H01L2924/12036 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor lamination including an n-type layer and a p-type layer composed of a gallium nitride based compound semiconductor and forming a light emitting region is formed on the surface of a substrate. A p-side electrode is formed through a diffusion metal layer on the surface of the semiconductor lamination. Also, an n-side electrode is formed on the n-type layer exposed by etching off a part of the semiconductor lamination. The n-side electrode is formed of an ohmic contact electrode and a bonding electrode. The bonding electrode is formed in such a manner as to cover the surface and the sides of the ohmic contact electrode. As a result, a semiconductor light emitting device made of a gallium nitride based compound semiconductor is produced having an electrode structure of a superior ohmic contact characteristic and a superior wire bonding characteristic.

23. 发明授权

US06395572B1 Method of producing semiconductor light-emitting element 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US06395572B1
公开(公告)日：2002-05-28
申请号：US09518504
申请日：2000-03-03
申请人： Tsuyoshi Tsutsui , Kotaro Ogura
发明人： Tsuyoshi Tsutsui , Kotaro Ogura
IPC分类号： H01L2100
CPC分类号： H01L33/22
摘要： Semiconductor light-emitting elements are produced by providing a wafer substrate of GaP, epitaxially growing on this substrate a semiconductor layered structure including an n-type layer and a p-type layer of GaP for providing a light-emitting layer, forming top electrodes on the semiconductor layered structure each over a portion of the area corresponding to one of the chips into which the substrate is to be later divided, forming a bottom electrode on the bottom surface of the substrate, dicing the wafer substrate into the individual chips, and thereafter carrying out a surface-roughening process on externally exposed portions of the semiconductor structure by means of hydrochloric acid. Each of the top electrodes is of a three-layer structure with a contact metal layer which may be of an alloy of Au and makes an ohmic contact with the GaP of the semiconductor layered structure, a Mo layer on the contact metal layer and an Au layer on the Mo layer.
摘要翻译：半导体发光元件是通过提供GaP晶片衬底，在该衬底上外延生长的半导体层状结构，包括n型层和用于提供发光层的GaP的p型层，形成顶部电极将半导体分层结构分别与对应于要分离基板的芯片之一对应的区域的一部分上，在基板的底面上形成底部电极，将晶片基板切割成各个芯片，之后通过盐酸对半导体结构的外露部分进行表面粗糙化处理。每个顶电极具有三层结构，其接触金属层可以是Au的合金，并与半导体层状结构的GaP，欧姆接触，接触金属层上的Mo层和Au Mo层上。

24. 发明授权

US06248607B1 Method for manufacturing semiconductor light emitting device 失效
标题翻译：半导体发光元件的制造方法
公开(公告)号：US06248607B1
公开(公告)日：2001-06-19
申请号：US09391624
申请日：1999-09-07
申请人： Tsuyoshi Tsutsui
发明人： Tsuyoshi Tsutsui
IPC分类号： H01L2100
CPC分类号： H01L33/0095 , H01L33/007 , Y10S438/906 , Y10S438/909
摘要： In a method for manufacturing semiconductor light emitting device, when a gallium nitride based compound semiconductor layers which include at least an n-type layer and p-type layer and which form a light emitting layer, are laminated on a substrate and heat treatment is performed for activation of the p-type layer of the laminated semiconductor layers, the heat treatment is performed under an atmosphere including oxygen. With this arrangement, the heat treatment for activating the p-type layer of the laminated semiconductor layers comprising gallium nitride based compound semiconductor can be performed in a short time and moreover to reliably perform activation.
摘要翻译：在制造半导体发光器件的方法中，当将至少包含n型层和p型层并形成发光层的氮化镓基化合物半导体层层叠在基板上并进行热处理时为了激活层叠半导体层的p型层，在包括氧的气氛下进行热处理。通过这种布置，可以在短时间内执行用于激活包含氮化镓基化合物半导体的层叠半导体层的p型层的热处理，而且可靠地进行激活。

25. 发明授权

US06168962A Method of manufacturing a semiconductor light emitting device 失效
标题翻译：制造半导体发光器件的方法
公开(公告)号：US06168962A
公开(公告)日：2001-01-02
申请号：US09012193
申请日：1998-01-23
申请人： Norikazu Itoh , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Tsuyoshi Tsutsui
发明人： Norikazu Itoh , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Tsuyoshi Tsutsui
IPC分类号： H01L21302
CPC分类号： H01L33/0095
摘要： Disclosed is a method of manufacturing a semiconductor light emitting device. Semiconductor overlying layers are formed on a substrate in a state of a wafer so that a light emitting area is provided therein. The semiconductor overlying layers includes first and second conductivity type layers. Part of the semiconductor overlying layers including the first conductivity type layer on a surface thereof is removed so as to expose part of the second conductivity type layer. Electrodes are formed, for each chip, respectively in connection with the surface of the first conductivity type layer and the surface of the exposed second conductivity type layer. The wafer is divided into individual chips. The exposed areas of the second conductivity type semiconductor layer is provided only part of a peripheral area of the chip so that the first conductivity type semiconductor layer is directly separated during dividing the wafer into individual chips. With such a method, when dividing a wafer into chips, the inefficiency of the space (etched areas do not contribute to light emission) is eliminated in etch-removing the semiconductor overlying layers at areas to be divided, thereby improving chip yield and hence reducing cost.
摘要翻译：公开了半导体发光器件的制造方法。在晶片的状态下在基板上形成半导体覆盖层，以便在其中提供发光区域。半导体覆盖层包括第一和第二导电类型层。除去包括其表面上的第一导电类型的半导体覆盖层的一部分，以暴露部分第二导电类型层。对于每个芯片，分别与第一导电类型层的表面和暴露的第二导电类型层的表面分别形成电极。晶片分为单个芯片。第二导电类型半导体层的暴露区域仅提供芯片的周边区域的一部分，使得在将晶片分成单个芯片期间，第一导电类型半导体层被直接分离。通过这样的方法，当将晶片分成芯片时，在要分割的区域上的半导体覆盖层的蚀刻去除中消除了空间（蚀刻区域对光发射没有贡献）的低效率，从而提高了芯片产量并因此降低了成本。

26. 发明授权

US5939735A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US5939735A
公开(公告)日：1999-08-17
申请号：US993091
申请日：1997-12-18
申请人： Tsuyoshi Tsutsui , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Norikazu Itoh
发明人： Tsuyoshi Tsutsui , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Norikazu Itoh
IPC分类号： H01L33/10 , H01L33/32 , H01L33/46 , H01S5/00 , H01S5/323 , H01L33/00
CPC分类号： H01L33/46 , H01L33/007 , H01L2924/0002 , H01L2933/0083
摘要： A semiconductor light emitting device includes a substrate and semiconductor overlying layers formed on the substrate. A light emitting layer is formed in the semiconductor layer so as to emit light. The substrate is transmittable of the light emitted by the light emitting layer. A light reflecting layer is formed on a part of a back surface of the substrate. As a result, a semiconductor light emitting device is obtainable by easily dividing a wafer having thereon a light emitting film through recognizing, from a wafer back side, semiconductor layer chip pattern formed overlying the main surface of the wafer.
摘要翻译：半导体发光器件包括衬底和形成在衬底上的半导体覆盖层。在半导体层中形成发光层以发光。基板可透射由发光层发射的光。在基板的背面的一部分上形成光反射层。结果，半导体发光器件可以通过从晶片背面识别形成在晶片的主表面上的半导体层芯片图案容易地分割其上具有发光膜的晶片而获得。

27. 发明授权

US5798536A Light-emitting semiconductor device and method for manufacturing the same 失效
标题翻译：发光半导体器件及其制造方法
公开(公告)号：US5798536A
公开(公告)日：1998-08-25
申请号：US785037
申请日：1997-01-17
申请人： Tsuyoshi Tsutsui
发明人： Tsuyoshi Tsutsui
IPC分类号： H01L33/38 , H01L33/40 , H01L33/62 , H01L33/00
CPC分类号： H01L33/38 , H01L24/73 , H01L33/62 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01047 , H01L2924/01056 , H01L2924/01057 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/12041 , H01L2924/3025 , H01L33/385 , H01L33/40
摘要： Desclosed is a light-emitting semiconductor device has a light-emitting chip. The light-emitting chip has an insulator substrate and a semiconductor layer formed overlying the substrate. First and second conductivity type regions are formed in the semiconductor layer. The second conductivity type region has an exposed surface formed by removing part of the semiconductor layer. A top electrode is formed on a surface of the first conductivity type region. An end electrode is formed on an exposed surface of the second conductivity type region. A first electrode lead is mounted with the light-emitting chip and has a projecting portion extending along an adjacent surface of the light-emitting chip. A second electrode lead extends parallel to the first electrode lead. A conductor wire is electrically connected between the second electrode lead and the top electrode. The end electrode and the projecting portion are electrically connected through an electrically-conductive resin.
摘要翻译：被封闭的是具有发光芯片的发光半导体器件。发光芯片具有绝缘体基板和形成在基板上的半导体层。第一和第二导电类型区域形成在半导体层中。第二导电类型区域具有通过去除半导体层的一部分而形成的暴露表面。在第一导电类型区域的表面上形成顶部电极。端电极形成在第二导电类型区域的暴露表面上。第一电极引线安装有发光芯片，并且具有沿着发光芯片的相邻表面延伸的突出部分。第二电极引线平行于第一电极引线延伸。导体线电连接在第二电极引线和顶部电极之间。端电极和突出部分通过导电树脂电连接。

28. 发明授权

US08889437B2 Light-emitting device, light-emitting device package, method of manufacturing light-emitting device, and method of packaging light-emitting device 有权
标题翻译：发光装置，发光装置封装，发光装置的制造方法以及封装发光装置的方法
公开(公告)号：US08889437B2
公开(公告)日：2014-11-18
申请号：US13297809
申请日：2011-11-16
申请人： Tsuyoshi Tsutsui
发明人： Tsuyoshi Tsutsui
IPC分类号： H01L21/00 , H01L33/50
CPC分类号： H01L33/507 , H01L33/486 , H01L33/50 , H01L33/501 , H01L33/502 , H01L33/505 , H01L2224/48091 , H01L2224/48247 , H01L2224/73204 , H01L2224/8592 , H01L2933/0041 , H01L2924/00014
摘要： A light-emitting device including a phosphor layer, a light-emitting device package employing the light-emitting device, a method of manufacturing the light-emitting device, and a method of packaging the light-emitting device. The light-emitting device includes: a light-transmissive substrate having a top surface, a bottom surface, and side surfaces; a light-emitting unit formed on the top surface of the light-transmissive substrate; and a phosphor layer covering all the side surfaces of the light-transmissive substrate. According to the present invention, chromaticity inferiorities of light emitted from side surfaces of a substrate may be reduced.
摘要翻译：包括荧光体层的发光器件，使用发光器件的发光器件封装，制造发光器件的方法以及封装发光器件的方法。发光装置包括：具有顶表面，底表面和侧表面的透光基底; 形成在所述透光性基板的上表面的发光单元; 以及覆盖透光性基板的所有侧面的荧光体层。根据本发明，可以减少从衬底的侧表面发射的光的色度劣化。

29. 发明授权

US08735935B2 Small size light emitting device and manufacturing method of the same 有权
标题翻译：小尺寸发光装置及其制造方法相同
公开(公告)号：US08735935B2
公开(公告)日：2014-05-27
申请号：US13070014
申请日：2011-03-23
申请人： Tomio Inoue , Tsuyoshi Tsutsui , Jae Joon Yoon , Ok Hee Shin
发明人： Tomio Inoue , Tsuyoshi Tsutsui , Jae Joon Yoon , Ok Hee Shin
IPC分类号： H01L33/00
CPC分类号： H01L33/52 , B29C39/42 , H01L24/97 , H01L33/0095 , H01L33/483 , H01L2224/48091 , H01L2224/48465 , H01L2924/12035 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： There is provided a light emitting device including: a package body having first and second circumferential surfaces and a plurality of side surfaces formed therebetween, the package body defined into first and second level areas including the first and second circumferential surfaces, respectively; first and second external terminal blocks each having an electrical contact part; an LED chip disposed between the first and second external terminal blocks in the first level area and having an electrode surface where first and second electrodes are formed; and wires electrically connected to first and second electrodes of the LED chip to the electrical contact parts of the first and second external terminal blocks, respectively.
摘要翻译：提供了一种发光器件，包括：封装体，其具有第一和第二周向表面和形成在其间的多个侧表面，所述封装体分别限定在包括第一和第二周向表面的第一和第二水平区域中; 每个具有电接触部分的第一和第二外部接线端子; LED芯片，设置在第一电平区域中的第一和第二外部端子块之间，并且具有形成第一和第二电极的电极表面; 以及分别与LED芯片的第一和第二电极电连接到第一和第二外部端子块的电接触部分的导线。

30. 发明申请

US20120184056A1 METHOD AND APPARATUS FOR MANUFACTURING WHITE LIGHT-EMITTING DEVICE 有权
标题翻译：制造白色发光装置的方法和装置
公开(公告)号：US20120184056A1
公开(公告)日：2012-07-19
申请号：US13338678
申请日：2011-12-28
申请人： Cheol-jun YOO , Seong-jae Hong , Tsuyoshi Tsutsui , Shin-kun Kim
发明人： Cheol-jun YOO , Seong-jae Hong , Tsuyoshi Tsutsui , Shin-kun Kim
IPC分类号： H01L33/50 , B05C11/00 , B05C13/02
CPC分类号： B05C1/027 , H01L21/6715 , H01L21/6838 , H01L33/0079 , H01L33/50 , H01L2933/0041
摘要： Methods and apparatus for manufacturing a semiconductor light-emitting device that emits white light by forming a phosphor layer on an emission surface of the semiconductor light-emitting device at a wafer-level. The method includes: forming a plurality of light-emitting devices on a wafer; thinning the wafer, on which the plurality of light-emitting devices are formed; disposing the thinned wafer on a carrier film; and forming a phosphor layer on an emission surface of the plurality of light-emitting devices on the wafer.
摘要翻译：制造通过在晶片级在半导体发光元件的发射表面上形成荧光层而发出白光的半导体发光器件的制造方法和装置。该方法包括：在晶片上形成多个发光器件; 使形成有多个发光装置的晶片变薄; 将薄的晶片设置在载体膜上; 以及在所述晶片上的所述多个发光器件的发射表面上形成荧光体层。

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