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    • 24. 发明授权
    • Semiconductor device and method of fabricating the same
    • 半导体装置及其制造方法
    • US06331727B1
    • 2001-12-18
    • US09369470
    • 1999-08-06
    • Hiroomi NakajimaToshihiro Sakamoto
    • Hiroomi NakajimaToshihiro Sakamoto
    • H01L2978
    • H01L29/66287H01L29/0649H01L29/732
    • This invention includes a semiconductor substrate of one conductivity type having a semiconductor layer of an opposite conductivity type from an upper surface to a predetermined depth and first and second projections on the semiconductor layer of the opposite conductivity type, a first insulating film formed on an upper surface of the semiconductor substrate of one conductivity type from a portion except for the first and second projections to a predetermined level not reaching upper surfaces of the first and second projections, a semiconductor film of one conductivity type formed on at least the upper surface of the first projection, a first semiconductor film of the opposite conductivity type formed on at least the upper surface of the second projection, and a second semiconductor film of the opposite conductivity type formed in a predetermined position on an upper surface of the semiconductor film of one conductivity type. This structure allows an emitter to be formed without any alignment. In this invention, a p-type silicon layer corresponding to a base region and an n-type silicon layer corresponding to an emitter region are formed to be self-aligned with an element region (n-type heavily doped impurity region) corresponding to a collector layer. This makes alignment margin between these regions unnecessary and reduction of the element area possible. Unlike in conventional devices, almost no parasitic capacitances exist between an emitter electrode and a base electrode. This achieves high operating speed.
    • 本发明包括一种导电类型的半导体衬底,具有从上表面到预定深度的相反导电类型的半导体层,以及在相反导电类型的半导体层上的第一和第二突起,形成在上部 一个导电类型的半导体衬底的表面从除了第一和第二突起之外的部分到达未到达第一和第二突起的上表面的预定水平,至少形成在第一和第二突起的上表面上的一种导电类型的半导体膜 第一投影,形成在至少第二投影的上表面上的相反导电类型的第一半导体膜,以及形成在半导体膜的上表面上的一个导电性的预定位置的相反导电类型的第二半导体膜 类型。 这种结构允许在没有任何对准的情况下形成发射器。 在本发明中,对应于基极区域的p型硅层和对应于发射极区域的n型硅层形成为与对应于发射极区域的元素区域(n型重掺杂杂质区域)自对准 收集层。 这使得这些区域之间的对准边缘不必要,并且元件区域的减少成为可能。 与常规器件不同,发射电极和基极之间几乎不存在寄生电容。 这实现了高的运行速度。
    • 25. 发明授权
    • Method of producing an infrared transmitting barium fluoride sintered
body
    • 制造红外透射钡氟化钡烧结体的方法
    • US5658504A
    • 1997-08-19
    • US443894
    • 1995-05-17
    • Kenichiro ShibataAkihito FujiiToshihiro Sakamoto
    • Kenichiro ShibataAkihito FujiiToshihiro Sakamoto
    • C04B35/553B29D11/00
    • C04B35/553
    • The present invention provides a method of producing an infrared ray transmitting material, a large-sized one which can be manufactured at a low price, consisting of a polycrystal not liable to cleavage, which makes only a slight absorption of infrared rays all over the region of 8-11 .mu.m wave lengths, thus being highly transmissive. The material is a polycrystalline barium fluoride sintered body excellent in transmission to infrared region of 8-11 .mu.m wave lengths, one that is most excellent in the infrared transmission and being produced by a method of hot press sintering and an HIP treatment in combination, one that gives somewhat inferior transmission but which is low-priced produced by a method of CIP molding and normal pressure sintering in combination, and one that is regarded as an intermediate between the aforementioned two by a method comprising the CIP molding, normal-pressure sintering and the HIP treatment in combination, in all cases entirely without the addition of any binder or sintering aid.
    • 本发明提供一种红外线透射材料的制造方法,该红外线透射材料是能够以低价格制造的大尺寸的红外线透射材料的方法,其由不易分裂的多晶体构成,其仅在该区域上仅仅吸收红外线 8-11μm波长,因此具有高度的透光性。 该材料是透光率高达8-11μm波长的红外区域的透光性优异的多晶钡氟化物烧结体,其特征在于红外线透过率最优异,并且通过热压烧结和HIP处理的组合制造, 通过CIP成型和常压烧结的方法组合产生低价格的低通量,通过包括CIP成型,常压烧结的方法被认为是上述两者之间的中间体 和HIP处理组合,在所有情况下完全不添加任何粘合剂或烧结助剂。