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21. 发明申请

US20070034874A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070034874A1
公开(公告)日：2007-02-15
申请号：US11584524
申请日：2006-10-23
申请人： Tatsuya Arao , Takeshi Noda , Takuya Matsuo , Hidehito Kitakado , Masanori Kyoho
发明人： Tatsuya Arao , Takeshi Noda , Takuya Matsuo , Hidehito Kitakado , Masanori Kyoho
IPC分类号： H01L29/04 , H01L21/84
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/1259 , H01L29/6675 , H01L29/78621 , H01L29/78648
摘要： A semiconductor device that can be manufactured with a reduced cost by decreasing the number of masks is disclosed, and a method for manufacturing the semiconductor device is disclosed. The method for manufacturing the semiconductor device comprises the steps of: forming a semiconductor layer 3 having a source and a drain regions 10, 11, and LDD regions 16, 17; a gate insulating film 5; and a gate electrode 6; forming a first and a second interlayer insulating films 24, 25 over the gate electrode 6 and the gate insulating film 5; forming contact holes 25a, 25c to these interlayer insulating films so as to be located over each of the source region and the drain region; and an opening portion 25b to these interlayer insulating films so as to be located over the gate electrode and the LDD region; forming a second gate electrode 26b by a conductive film in the opening portion so as to cover the gate electrode and the LDD region; and a pixel electrode 26a over the second interlayer insulating film; removing the gate insulating film in the contact hole; and forming wirings 27, 28 connected to each the source region and the drain region.
摘要翻译：公开了可以通过减少掩模数而降低成本的半导体器件，并且公开了一种用于制造半导体器件的方法。制造半导体器件的方法包括以下步骤：形成具有源极和漏极区域10,11以及LDD区域16,17的半导体层3; 栅极绝缘膜5; 和栅电极6; 在栅极电极6和栅极绝缘膜5上形成第一和第二层间绝缘膜24,25; 向这些层间绝缘膜形成接触孔25a，25c，以便位于源极区域和漏极区域之上; 和这些层间绝缘膜的开口部分25b，以便位于栅电极和LDD区之上; 通过开口部中的导电膜形成第二栅电极26b，以覆盖栅电极和LDD区; 以及在第二层间绝缘膜上的像素电极26a; 去除接触孔中的栅极绝缘膜; 以及形成连接到每个源极区域和漏极区域的布线27,28。

22. 发明申请

US20060261253A1 Photoelectric conversion device and manufacturing method thereof 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20060261253A1
公开(公告)日：2006-11-23
申请号：US11436086
申请日：2006-05-18
申请人： Tatsuya Arao , Atsushi Hirose , Kazuo Nishi , Yuusuke Sugawara
发明人： Tatsuya Arao , Atsushi Hirose , Kazuo Nishi , Yuusuke Sugawara
IPC分类号： H01L31/00
CPC分类号： G01J1/18 , G01J1/44 , G01J2001/4406 , G09G3/3611 , G09G2320/0626 , G09G2360/144 , G09G2360/145 , H01L27/14609 , H01L27/14618 , H01L27/14643 , H01L27/14692 , H01L31/101 , H01L31/105 , H01L2924/0002 , H01L2924/00
摘要： It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means, where a bias which is connected to the photodiode and the amplifier circuit is switched by the bias switching means when intensity of incident light exceeds predetermined intensity, and accordingly, light which is less than the predetermined intensity is detected by the photodiode and light which is more than the predetermined intensity is detected by the thin film transistor of the amplifier circuit. By the present invention, light ranging from weak light to strong light can be detected.
摘要翻译：本发明的目的是提供一种检测从弱光到强光的光的光电转换装置。本发明涉及具有光电转换层的光电二极管的光电转换装置，包括薄膜晶体管的放大电路和偏置开关装置，其中连接到光电二极管和放大器电路的偏压通过偏置开关意味着当入射光的强度超过预定强度时，由光电二极管检测到小于预定强度的光，并且由放大电路的薄膜晶体管检测出大于预定强度的光。通过本发明，可以检测从弱光到强光的光。

23. 发明申请

US20050199878A1 Thin film transistor, semiconductor device, and method for manufacturing the same 有权
标题翻译：薄膜晶体管，半导体器件及其制造方法
公开(公告)号：US20050199878A1
公开(公告)日：2005-09-15
申请号：US11071255
申请日：2005-03-04
申请人： Tatsuya Arao , Hiroyuki Miyake
发明人： Tatsuya Arao , Hiroyuki Miyake
IPC分类号： G09F9/30 , H01L21/336 , H01L21/84 , H01L29/786 , H01L31/0392
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/127 , H01L27/1288 , H01L27/1296
摘要： A semiconductor element is operated without being affected even when the substrate is largely affected by heat shrink such as a large substrate. Furthermore, a thin film semiconductor circuit and a thin film semiconductor device each having the semiconductor element. Also, a semiconductor element is operated without being affected even if there is slight mask deviation. In view of them, a plurality of gate electrodes formed so as to overlap a lower concentration impurity region of a semiconductor layer than drain regions on a drain region side. Also, source regions and the drain regions corresponding to the respective gate electrodes are formed so that current flows in opposite directions each other through channel regions corresponding to the gate electrodes. Further, the number of the channel regions in which a current flows in a first direction is equal to the number of the channel regions in which a current flows in a direction opposite to the first direction.
摘要翻译：即使当基板受到诸如大基板的热收缩的很大影响时，也不会影响半导体元件。此外，每个都具有半导体元件的薄膜半导体电路和薄膜半导体器件。此外，即使存在轻微的掩模偏差，也不会影响半导体元件的影响。鉴于它们，多个栅电极被形成为与漏极区侧的漏极区重叠的半导体层的较低浓度杂质区。此外，形成与各个栅电极对应的源极区域和漏极区域，使得电流通过与栅电极对应的沟道区域彼此相反的方向流动。此外，电流沿第一方向流动的通道区域的数量等于电流沿与第一方向相反的方向流动的沟道区域的数量。

24. 发明授权

US06933527B2 Semiconductor device and semiconductor device production system 失效
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US06933527B2
公开(公告)日：2005-08-23
申请号：US10330025
申请日：2002-12-27
申请人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
发明人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L29/104 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L21/02683 , H01L21/2022 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696
摘要： It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.
摘要翻译：提供一种使用能够防止在TFT沟道区域中形成晶界的激光晶体化方法的半导体器件制造系统的问题，并且进一步防止由于晶界引起的TFT迁移率的明显降低，导通电流降低或截止电流增加。在基板上形成绝缘膜，在绝缘膜上形成半导体膜。由此，优选形成半导体膜中通过激光在结晶期间通过应力集中施加的区域。具体地，在半导体膜上形成条状或矩形凹凸。连续振荡激光沿着条纹凹凸或长轴或短轴方向照射。

25. 发明申请

US20050082537A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050082537A1
公开(公告)日：2005-04-21
申请号：US10963822
申请日：2004-10-14
申请人： Tatsuya Arao , Takeshi Noda , Takuya Matsuo , Hidehito Kitakado , Masanori Kyoho
发明人： Tatsuya Arao , Takeshi Noda , Takuya Matsuo , Hidehito Kitakado , Masanori Kyoho
IPC分类号： G02F1/1343 , G02F1/1368 , H01L21/20 , H01L21/28 , H01L21/336 , H01L21/77 , H01L21/86 , H01L27/12 , H01L29/423 , H01L29/49 , H01L29/786 , H01L29/04
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/1259 , H01L29/6675 , H01L29/78621 , H01L29/78648
摘要： A semiconductor device that can be manufactured with a reduced cost by decreasing the number of masks is disclosed, and a method for manufacturing the semiconductor device is disclosed. The method for manufacturing the semiconductor device comprises the steps of: forming a semiconductor layer 3 having a source and a drain regions 10, 11, and LDD regions 16, 17; a gate insulating film 5; and a gate electrode 6; forming a first and a second interlayer insulating films 24, 25 over the gate electrode 6 and the gate insulating film 5; forming contact holes 25a, 25c to these interlayer insulating films so as to be located over each of the source region and the drain region; and an opening portion 25b to these interlayer insulating films so as to be located over the gate electrode and the LDD region; forming a second gate electrode 26b by a conductive film in the opening portion so as to cover the gate electrode and the LDD region; and a pixel electrode 26a over the second interlayer insulating film; removing the gate insulating film in the contact hole; and forming wirings 27, 28 connected to each the source region and the drain region.
摘要翻译：公开了可以通过减少掩模数而降低成本的半导体器件，并且公开了一种用于制造半导体器件的方法。制造半导体器件的方法包括以下步骤：形成具有源极和漏极区域10,11以及LDD区域16,17的半导体层3; 栅极绝缘膜5; 和栅电极6; 在栅极电极6和栅极绝缘膜5上形成第一和第二层间绝缘膜24,25; 向这些层间绝缘膜形成接触孔25a，25c，以便位于源极区域和漏极区域之上; 和这些层间绝缘膜的开口部分25b，以便位于栅电极和LDD区之上; 通过开口部中的导电膜形成第二栅电极26b，以覆盖栅电极和LDD区; 以及在第二层间绝缘膜上的像素电极26a; 去除接触孔中的栅极绝缘膜; 以及形成连接到每个源极区域和漏极区域的布线27,28。

26. 发明申请

US20050051776A1 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20050051776A1
公开(公告)日：2005-03-10
申请号：US10867226
申请日：2004-06-15
申请人： Noriko Miyagi , Masayuki Sakakura , Tatsuya Arao , Ritsuko Nagao , Yoshifumi Tanada
发明人： Noriko Miyagi , Masayuki Sakakura , Tatsuya Arao , Ritsuko Nagao , Yoshifumi Tanada
IPC分类号： G09G3/32 , H01L27/32 , H01L29/04 , H01L51/52
CPC分类号： H01L27/124 , G02F1/133345 , G09G3/3233 , G09G2300/0842 , G09G2300/0861 , H01L23/5228 , H01L27/1222 , H01L27/1248 , H01L27/3276 , H01L27/3279 , H01L33/40 , H01L51/5206 , H01L51/5212 , H01L51/5221 , H01L51/5228 , H01L51/5234 , H01L2251/5315
摘要： An object of the present invention is to decrease substantial resistance of an electrode such as a transparent electrode or a wiring, and furthermore, to provide a display device for which is possible to apply same voltage to light-emitting elements. In the invention, a auxiliary wiring that is formed in one layer in which a conductive film of a semiconductor element such as an electrode, wiring, a signal line, a scanning line, or a power supply line is connected to an electrode typified by a second electrode, and a wiring. It is preferable that the auxiliary wiring is formed into a conductive film to include low resistive material, especially, formed to include lower resistive material than the resistance of an electrode and a wiring that is required to reduce the resistance.
摘要翻译：本发明的一个目的是降低诸如透明电极或布线的电极的实质电阻，此外，提供一种可以向发光元件施加相同电压的显示装置。在本发明中，形成在电极，布线，信号线，扫描线或电源线等半导体元件的导电膜的一层中形成的辅助布线连接到以第二电极和布线。优选地，辅助布线形成为包括低电阻材料的导电膜，特别地，形成为包括比电阻的阻抗更低的电阻材料和降低电阻所需的布线。

27. 发明授权

US06646287B1 Semiconductor device with tapered gate and insulating film 有权
标题翻译：具有锥形栅极和绝缘膜的半导体器件
公开(公告)号：US06646287B1
公开(公告)日：2003-11-11
申请号：US09714891
申请日：2000-11-17
申请人： Koji Ono , Hideomi Suzawa , Tatsuya Arao
发明人： Koji Ono , Hideomi Suzawa , Tatsuya Arao
IPC分类号： H01L29786
CPC分类号： H01L27/1222 , G02F1/13624 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/127 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L33/08 , H01L33/62 , H01L2029/7863 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and the reliability of the semiconductor device, the manufacturing cost is reduced and the yield is increased by reducing the number of process steps. A semiconductor device has a semiconductor layer, an insulating film formed contacting the semiconductor layer, and a gate electrode having a tapered portion on the insulating film, in the semiconductor device, the semiconductor layer has a channel forming region, a first impurity region for forming a source region or a drain region and containing a single conductivity type impurity element, and a second impurity region for forming an LDD region contacting the channel forming region, a portion of the second impurity region is formed overlapping a gate electrode, and the concentration of the single conductivity type impurity element contained in the second impurity region becomes larger with distance from the channel forming region.
摘要翻译：在半导体器件（通常为有源矩阵显示器件）中，根据电路的功能，布置在各个电路中的TFT的结构是合适的，并且随着半导体器件的工作特性和可靠性的提高，制造降低成本，并通过减少工艺步骤的数量来提高产量。半导体器件具有半导体层，与半导体层接触形成的绝缘膜和在绝缘膜上具有锥形部分的栅电极，在半导体器件中，半导体层具有沟道形成区，形成第一杂质区源极区域或漏极区域，并且包含单一导电型杂质元素，以及用于形成与沟道形成区域接触的LDD区域的第二杂质区域，第二杂质区域的一部分与栅电极重叠，并且浓度包含在第二杂质区域中的单一导电型杂质元素随着与沟道形成区域的距离而变大。

28. 发明授权

US06620658B2 Method of manufacturing a semiconductor device 失效
公开(公告)号：US06620658B2
公开(公告)日：2003-09-16
申请号：US10071211
申请日：2002-02-11
申请人： Atsuo Isobe , Toru Takayama , Tatsuya Arao , Akihiko Koura
发明人： Atsuo Isobe , Toru Takayama , Tatsuya Arao , Akihiko Koura
IPC分类号： H01L2100
CPC分类号： H01L29/78603 , H01L27/12 , H01L27/1214 , H01L27/1259 , H01L29/4908 , H01L29/66757
摘要： A gate insulating film of a TFT is formed without increasing a substrate temperature so that a substrate having a low heat resistance such as a plastic substrate can be used. Further, a structure in which an S value of the above TFT is improved and an off leak current is reduced is used to realize the improvement of reliability of a semiconductor device. In the case where the gate insulating film is formed, it is formed by sputtering so that a region having 0.4 atomic % to 1.6 atomic % is present at concentration measurement of hydrogen in the film by an HFS analysis (hydrogen forward scattering analysis). Then, an insulating film is formed thereon by sputtering so that a region having 0.2 atomic % or less is present at concentration measurement of hydrogen in the film by an HFS analysis. When a TFT is manufactured using such a structure of the gate insulating film, there are obtained TFT characteristics such that a subthreshold coefficient is low and a leak current flowing between a gate electrode and a source electrode or a leak current flowing between a gate electrode and a drain electrode is suppressed.

29. 发明授权

US09178069B2 Semiconductor device and semiconductor device production system 有权
公开(公告)号：US09178069B2
公开(公告)日：2015-11-03
申请号：US12533401
申请日：2009-07-31
申请人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
发明人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
IPC分类号： H01L21/268 , H01L29/786 , H01L21/3213 , H01L21/02 , B23K26/073 , H01L21/20 , H01L21/84 , H01L29/66 , H01L27/12
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

30. 发明授权

US08772778B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08772778B2
公开(公告)日：2014-07-08
申请号：US13396717
申请日：2012-02-15
申请人： Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
发明人： Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L27/1222 , G02F1/13454 , H01L27/124 , H01L27/1255 , H01L27/127 , H01L29/42384 , H01L29/4908 , H01L29/78621 , H01L2029/7863
摘要： A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.
摘要翻译：提供了一种高可靠性的半导体显示装置。半导体显示装置中的半导体层具有沟道形成区域，LDD区域，源极区域和漏极区域，并且LDD区域与第一栅极电极重叠，夹着栅极绝缘膜。

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