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1. 发明授权

US07294517B2 Light emitting device and method of fabricating the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07294517B2
公开(公告)日：2007-11-13
申请号：US10172749
申请日：2002-06-17
申请人： Toru Takayama , Hirokazu Yamagata , Akihiko Koura , Shunpei Yamazaki
发明人： Toru Takayama , Hirokazu Yamagata , Akihiko Koura , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L27/3258
摘要： It is characteristic of an organic material suited to an interlayer insulating film to transmit vapor therethrough and to be liable to absorb moisture, and the material has a disadvantage that it is extremely susceptible to oxygen and moisture to be readily deteriorated no matter whether it is low-molecular or high-molecular. Further, alkali metal or alkaline earth metal is used for a positive electrode or a negative electrode of a light emitting element, and these are liable to be oxidized by oxygen. Thus moisture is responsible for deterioration of a light emitting element and for failure such as dark spots or the like. A light emitting device is provided to comprise an interlayer insulating film comprising a high molecular chemical compound and formed on a TFT formed on an insulating surface, a light emitting element, which is provided on the interlayer insulating film, and in which a light emitting layer comprising an organic chemical compound is formed between a pair of electrodes, and an inorganic insulating film containing silicon and nitrogen as its main components or a carbon film possessing a SP3 coupling and containing hydrogen formed between the interlayer insulating film and the light emitting element.
摘要翻译：适用于层间绝缘膜的有机材料的特征在于透过蒸气并易于吸收水分，并且该材料具有这样的缺点，即不管其是否低，氧气和水分都容易劣化分子或高分子。此外，碱金属或碱土金属用于发光元件的正极或负极，并且它们易于被氧氧化。因此，水分导致发光元件的劣化和诸如黑点等的故障。提供了一种发光器件，其包括：层间绝缘膜，其包含高分子化合物，形成在形成于绝缘表面上的TFT上;发光元件，其设置在层间绝缘膜上，并且其中发光层在一对电极之间形成有机化合物，以及含有硅和氮作为主要成分的无机绝缘膜或具有SP 3 O 3耦合的碳膜，并且包含形成在层间绝缘层胶片和发光元件。

2. 发明授权

US5840366A Method of forming thin film 失效
标题翻译：薄膜形成方法
公开(公告)号：US5840366A
公开(公告)日：1998-11-24
申请号：US520298
申请日：1995-08-28
申请人： Shigeru Mizuno , Akihiko Koura
发明人： Shigeru Mizuno , Akihiko Koura
IPC分类号： C23C16/02 , C23C16/14 , H01L21/285
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/14
摘要： A W film having good surface morphology and high reflectance is formed while avoiding any degradation of the characteristics such as specific resistivity. The method for forming a thin film is carried out by depositing a W film on a heated substrate using CVD. The raw material gas is WF.sub.6, and the reducing gases are SiH.sub.4 and H.sub.2. In the first stage of the film formation, the reaction between WF.sub.6 and SiH.sub.4 forms nuclei on the surface of the substrate. In the second stage, following the first stage, the reaction between WF.sub.6 and H.sub.2 forms the W film. The second stage is controlled to form crystal grains of a predetermined size. The first stage and the second stage are alternately repeated as many times as necessary.
摘要翻译：形成具有良好的表面形态和高反射率的W膜，同时避免诸如电阻率等特性的任何劣化。形成薄膜的方法是通过使用CVD在加热的基板上沉积W膜来进行的。原料气为WF6，还原气为SiH4和H2。在成膜的第一阶段，WF6和SiH4之间的反应在基材的表面上形成核。在第二阶段，在第一阶段之后，WF6和H2之间的反应形成W膜。控制第二阶段以形成预定尺寸的晶粒。第一阶段和第二阶段根据需要交替重复多次。

3. 发明申请

US20060151314A1 Sputtering system and manufacturing method of thin film 审中-公开
标题翻译：溅射系统及薄膜制造方法
公开(公告)号：US20060151314A1
公开(公告)日：2006-07-13
申请号：US11373273
申请日：2006-03-13
申请人： Kunihiko Fukuchi , Akihiko Koura , Tetsunori Maruyama , Toru Takayama
发明人： Kunihiko Fukuchi , Akihiko Koura , Tetsunori Maruyama , Toru Takayama
IPC分类号： C23C14/00
CPC分类号： H01J37/3429 , C23C14/34 , C23C14/564
摘要： It is an object to provide a sputtering system that enables forming a high-quality thin film including no impurity, and it is also an object of the present invention to provide a method for manufacturing a high-quality thin film with the sputtering system. The present invention provides a sputtering system including a target material and a part coated with a spray material including the same material as the target material. The present invention also provides a method for manufacturing a thin film including one of a target material, oxide of the target material, and nitride of the target material, which includes preparing a sputtering system including the target material and a part coated with a spray material including the same material as the target material, and applying high-frequency power in an atmosphere including rare gas.
摘要翻译：本发明的目的是提供一种能够形成不含杂质的高质量薄膜的溅射系统，本发明的目的还在于提供一种利用溅射系统制造高品质薄膜的方法。本发明提供一种溅射系统，其包括目标材料和涂覆有包含与靶材料相同的材料的喷涂材料的部分。本发明还提供一种制造薄膜的方法，该薄膜包括目标材料，目标材料的氧化物和目标材料的氮化物中的一种，其包括制备包括目标材料的溅射系统和涂覆有喷涂材料的部分包括与目标材料相同的材料，以及在包括稀有气体的气氛中施加高频功率。

4. 发明授权

US06620658B2 Method of manufacturing a semiconductor device 失效
公开(公告)号：US06620658B2
公开(公告)日：2003-09-16
申请号：US10071211
申请日：2002-02-11
申请人： Atsuo Isobe , Toru Takayama , Tatsuya Arao , Akihiko Koura
发明人： Atsuo Isobe , Toru Takayama , Tatsuya Arao , Akihiko Koura
IPC分类号： H01L2100
CPC分类号： H01L29/78603 , H01L27/12 , H01L27/1214 , H01L27/1259 , H01L29/4908 , H01L29/66757
摘要： A gate insulating film of a TFT is formed without increasing a substrate temperature so that a substrate having a low heat resistance such as a plastic substrate can be used. Further, a structure in which an S value of the above TFT is improved and an off leak current is reduced is used to realize the improvement of reliability of a semiconductor device. In the case where the gate insulating film is formed, it is formed by sputtering so that a region having 0.4 atomic % to 1.6 atomic % is present at concentration measurement of hydrogen in the film by an HFS analysis (hydrogen forward scattering analysis). Then, an insulating film is formed thereon by sputtering so that a region having 0.2 atomic % or less is present at concentration measurement of hydrogen in the film by an HFS analysis. When a TFT is manufactured using such a structure of the gate insulating film, there are obtained TFT characteristics such that a subthreshold coefficient is low and a leak current flowing between a gate electrode and a source electrode or a leak current flowing between a gate electrode and a drain electrode is suppressed.

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