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21. 发明授权

US07948171B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US07948171B2
公开(公告)日：2011-05-24
申请号：US11352185
申请日：2006-02-10
申请人： Masayuki Sakakura , Takeshi Noda , Hideaki Kuwabara , Shunpei Yamazaki
发明人： Masayuki Sakakura , Takeshi Noda , Hideaki Kuwabara , Shunpei Yamazaki
IPC分类号： H01L51/50 , H01L51/52
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3248 , H01L51/0011 , H01L51/5052 , H01L51/5206 , H01L51/5209 , H01L51/5218 , H01L51/56 , H01L2251/5315
摘要： A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.
摘要翻译：将提供一种有源矩阵发光器件的制造方法，其中有源矩阵发光器件可以在较短的时间内以较低的成本与常规的低成本制造。本发明的特征在于，与配置在有源矩阵型发光元件的像素区域中的每个TFT的半导体层接触或电连接的金属电极采用分层结构。此外，金属电极被部分蚀刻并用作发光元件的第一电极。缓冲层，含有有机化合物的层和第二电极层层叠在第一电极上。

22. 发明申请

US20110019933A1 INFORMATION PROCESSING APPARATUS, LINE NOISE REDUCTION PROCESSING METHOD, AND COMPUTER-READABLE STORAGE MEDIUM 有权
标题翻译：信息处理装置，线路噪声减少处理方法和计算机可读存储介质
公开(公告)号：US20110019933A1
公开(公告)日：2011-01-27
申请号：US12834230
申请日：2010-07-12
申请人： Takeshi Noda
发明人： Takeshi Noda
IPC分类号： G06K9/40
CPC分类号： G06K9/40 , G06T5/002 , G06T5/20 , G06T2207/10116 , G06T2207/20028 , G06T2207/20192
摘要： An information processing apparatus performs first filter processing to combine pixels of an image along a predetermined direction. A line noise image is extracted by executing second filter processing for the processed image along a direction different from the predetermined direction. The extracted line noise image is subtracted from the image to acquire a line noise reduced image.
摘要翻译：信息处理装置执行第一滤波处理以组合沿预定方向的图像的像素。通过对于经处理的图像沿与预定方向不同的方向执行第二滤波处理来提取线噪声图像。从图像中减去提取的线噪声图像，以获得线噪声降低图像。

23. 发明授权

US07851989B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US07851989B2
公开(公告)日：2010-12-14
申请号：US11386187
申请日：2006-03-22
申请人： Takeshi Noda
发明人： Takeshi Noda
IPC分类号： H05B33/00
CPC分类号： H01L33/26 , H01L51/5048 , H01L51/5203 , H01L51/5209 , H05B33/24
摘要： It is an object of the present invention to provide a light-emitting device in which, even when a material with high reflectivity such as aluminum is used for an electrode, a layer containing oxygen can be formed over the electrode without increasing contact resistance and a manufacturing method thereof. According to the present invention, a feature thereof is a light-emitting element having an electrode composed of a stacked structure where a conductive film having high reflectivity such as aluminum, silver, and an alloy containing aluminum or an alloy containing silver, and a conductive film composed of a refractory metal material is provided over the conductive film, or a light-emitting device having the light-emitting element.
摘要翻译：本发明的目的是提供一种发光装置，其中即使当具有诸如铝的高反射率的材料用于电极时，可以在电极上形成包含氧的层，而不增加接触电阻，并且其制造方法。根据本发明，其特征在于，具有由具有高反射率的导电膜如铝，银以及包含铝的合金或含有银的合金的叠层结构的电极和导电性的发光元件在导电膜上设置由难熔金属材料构成的膜，或者具有发光元件的发光装置。

24. 发明授权

US07777230B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US07777230B2
公开(公告)日：2010-08-17
申请号：US12155788
申请日：2008-06-10
申请人： Hidekazu Miyake , Takuo Kaitoh , Takeshi Noda , Toshio Miyazawa
发明人： Hidekazu Miyake , Takuo Kaitoh , Takeshi Noda , Toshio Miyazawa
IPC分类号： H01L27/14
CPC分类号： H01L27/124 , G02F1/1368
摘要： The present invention provides a display device having thin film transistors which can reduce an OFF current in spite of the extremely simple constitution. In the display device having thin film transistors on a substrate, each thin film transistor includes a gate electrode which is connected with a gate signal line, a semiconductor layer which is formed astride the gate electrode by way of an insulation film, a drain electrode which is connected with a drain signal line and is formed on the semiconductor layer, and a source electrode which is formed on the semiconductor layer in a state that the source electrode faces the drain electrode in an opposed manner, and a side of the drain electrode which faces the source electrode does not overlap the gate electrode as viewed in a plan view, and a side of the source electrode which faces the drain electrode does not overlap the gate electrode as viewed in a plan view.
摘要翻译：本发明提供了一种具有薄膜晶体管的显示装置，尽管结构非常简单，但可以减小关断电流。在基板上具有薄膜晶体管的显示装置中，每个薄膜晶体管包括与栅极信号线连接的栅电极，通过绝缘膜跨越栅电极的半导体层，漏电极与漏极信号线连接并形成在半导体层上，并且以与源电极相对的方式形成在漏电极的状态的半导体层上形成的源电极和漏电极的一侧如平面图所示，面源极电极不与栅电极重叠，源极电极的面对漏电极的一侧与平面图中的栅电极不重叠。

25. 发明申请

US20100109014A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20100109014A1
公开(公告)日：2010-05-06
申请号：US12611951
申请日：2009-11-04
申请人： Takahiro KAMO , Takeshi Noda
发明人： Takahiro KAMO , Takeshi Noda
IPC分类号： H01L33/00 , H01L29/786 , H01L21/336
CPC分类号： H01L27/1214 , H01L29/66765 , H01L29/78621 , H01L29/78627 , H01L29/78678 , H01L29/78696
摘要： A display device includes: a conductive layer on which gate electrodes are formed; a first insulation layer which is formed on the conductive layer; a semiconductor layer which is formed on the first insulation layer and is provided for forming semiconductor films which contain poly-crystalline silicon above the gate electrodes; and a second insulation layer which is formed on the semiconductor layer. Here, the semiconductor film includes a channel region which overlaps with the gate electrode as viewed in a plan view. In the channel region, a portion of the semiconductor film which is in contact with the second insulation layer exhibits higher impurity concentration than a portion of the semiconductor film which is in contact with the first insulation layer.
摘要翻译：显示装置包括：形成栅电极的导电层; 形成在导电层上的第一绝缘层; 半导体层，形成在第一绝缘层上，用于形成在栅电极上方含有多晶硅的半导体膜; 以及形成在所述半导体层上的第二绝缘层。这里，半导体膜包括与平面图中的栅电极重叠的沟道区域。在沟道区域中，与第二绝缘层接触的半导体膜的一部分比与第一绝缘层接触的半导体膜的部分显示更高的杂质浓度。

26. 发明申请

US20100032674A1 Display Device 有权
标题翻译：显示设备
公开(公告)号：US20100032674A1
公开(公告)日：2010-02-11
申请号：US12536097
申请日：2009-08-05
申请人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Takumi Shigaki
发明人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Takumi Shigaki
IPC分类号： H01L33/00
CPC分类号： G02F1/13624 , G02F2202/104
摘要： An object of the present invention is to provide a display device where small thin film transistors with a lower off current can be formed. The present invention provides a display device where thin film transistors are formed on a substrate, and in the above described thin film transistors, a gate electrode is formed on a semiconductor layer with a gate insulating film in between, the above described thin film transistors are formed of at least a first thin film transistor and a second thin film transistor, and the above described semiconductor layer is divided into individual regions for each film transistor, the above described semiconductor layer is provided with a common region shared either by the drain region of the above described first thin film transistor and the source region of the above described second thin film transistor or by the source region of the above described first thin film transistor and the drain region of the above described second thin film transistor, in the first thin film transistor and the second thin film transistor, the semiconductor layer is provided with LDD regions where the impurity concentration is lower than in the above described drain region and the above described source region, between the channel region and the drain region, as well as between the channel region and the source region, and the above described gate electrode is formed so as to overlap with the above described common region in the above described semiconductor layer and face at least the above described channel region and the above described LDD regions of the above described first thin film transistor and the above described channel region and the above described LDD regions of the above described second thin film transistor.
摘要翻译：本发明的目的是提供一种可以形成具有较低截止电流的小型薄膜晶体管的显示装置。本发明提供了一种在基板上形成薄膜晶体管的显示装置，在上述薄膜晶体管中，在半导体层之间形成有栅极绝缘膜的栅电极，上述薄膜晶体管由至少第一薄膜晶体管和第二薄膜晶体管形成，并且上述半导体层被分成用于每个薄膜晶体管的各个区域，上述半导体层设置有共同区域，其共同区域由上述第一薄膜晶体管和上述第二薄膜晶体管的源极区域或上述第一薄膜晶体管的源极区域和上述第二薄膜晶体管的漏极区域在第一薄膜晶体管和第二薄膜晶体管，半导体层设置有LDD区，其中杂质c 浓度低于上述漏极区域和上述源极区域，沟道区域和漏极区域之间以及沟道区域和源极区域之间，并且上述栅极电极形成为重叠在上述半导体层中具有上述公共区域并且至少面向上述第一薄膜晶体管的上述沟道区域和上述LDD区域以及上述沟道区域和上述上述LDD区域描述的第二薄膜晶体管。

27. 发明授权

US07605680B2 Electromagnetic actuator 失效
标题翻译：电磁执行器
公开(公告)号：US07605680B2
公开(公告)日：2009-10-20
申请号：US11661606
申请日：2005-09-07
申请人： Yasuhiro Matsumoto , Nobutaka Kubota , Takeshi Noda , Kazuhiro Matsuo , Kenji Kato , Mitsutaka Homma , Takao Wakabayashi
发明人： Yasuhiro Matsumoto , Nobutaka Kubota , Takeshi Noda , Kazuhiro Matsuo , Kenji Kato , Mitsutaka Homma , Takao Wakabayashi
IPC分类号： H01F7/00
CPC分类号： H01F7/1615 , H01F7/081 , H01F2007/1692
摘要： A highly efficient electromagnetic actuator which can reduce leakage of the magnetic flux is provided. The electromagnetic actuator comprises a first coil 31, a movable body 2 adapted to move on the central axis of the first coil 31, a first stator 11 covering the top face, bottom face and outer peripheral face of the first coil 31, and a permanent magnet 15 adapted to firmly latch the movable body 2 at one end point of its movable range. A second stator 12 adapted to control the magnetic flux generated from the permanent magnet 15 is provided in succession with the first stator 11. By providing the second stator 12, when releasing the movable body 2 from its firmly latched state, the permanent magnet 15 is not inversely excited or demagnetized.
摘要翻译：提供了一种可以减少磁通泄漏的高效电磁致动器。电磁致动器包括第一线圈31，适于在第一线圈31的中心轴线上移动的可移动体2，覆盖第一线圈31的顶面，底面和外周面的第一定子11和永久磁体15适于在可移动范围的一个端点处牢固地将可移动体2锁定。适于控制从永磁体15产生的磁通量的第二定子12与第一定子11连续地设置。通过设置第二定子12，当将可动体2从其牢固的锁定状态释放时，永磁体15是没有反向激发或退磁。

28. 发明申请

US20090230397A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090230397A1
公开(公告)日：2009-09-17
申请号：US12405396
申请日：2009-03-17
申请人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
发明人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
IPC分类号： H01L27/12 , H01L21/77
CPC分类号： H01L27/1251 , H01L27/1229 , H01L27/1285
摘要： A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.
摘要翻译：显示装置包括TFT基板，其中在绝缘基板的表面上设置有多个具有非晶半导体的有源层的第一TFT元件和多个具有多晶半导体的有源层的第二TFT元件，其中所述第一TFT元件和所述第二TFT元件各自具有在所述绝缘基板的表面上依次堆叠的栅电极，栅极绝缘膜和所述有源层的结构，以及源电极和漏电极都连接到通过有源层上方的接触层的有源层和第二TFT元件的有源层在接触层堆叠的位置具有大于60nm的厚度。

29. 发明申请

US20090218574A1 Display device and manufacturing method therefor 审中-公开
标题翻译：显示装置及其制造方法
公开(公告)号：US20090218574A1
公开(公告)日：2009-09-03
申请号：US12379095
申请日：2009-02-12
申请人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda , Takeshi Kuriyagawa
发明人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda , Takeshi Kuriyagawa
IPC分类号： H01L33/00
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/66765 , H01L29/78621
摘要： A display device includes a thin film transistor above a substrate, in which the thin film transistor is configured to include a gate electrode, a gate insulating film formed to cover the gate electrode, a semiconductor layer formed to stride over the gate electrode on the gate insulating film, an inter-layer insulating film formed to cover the semiconductor layer, and a pair of electrodes formed to be connected to each of sides of the semiconductor layer interposing the gate electrode therebetween through contact holes formed through the inter-layer insulating film, high concentration impurity layers are formed at each connecting portion of the electrodes of the semiconductor layer, and an annular low-concentration impurity layer is formed to surround at least one of the high concentration impurity layers.
摘要翻译：显示装置包括在基板上方的薄膜晶体管，其中薄膜晶体管被配置为包括栅极电极，形成为覆盖栅电极的栅极绝缘膜，形成为跨越栅极上的栅极电极的半导体层绝缘膜，形成为覆盖半导体层的层间绝缘膜，以及一对电极，其形成为通过穿过该层间绝缘膜形成的接触孔而将半导体层的每一侧连接在其间的栅电极，在半导体层的电极的每个连接部分处形成高浓度杂质层，并且形成环状低浓度杂质层以包围至少一个高浓度杂质层。

30. 发明申请

US20070176161A1 Light emitting device 审中-公开
标题翻译：发光装置
公开(公告)号：US20070176161A1
公开(公告)日：2007-08-02
申请号：US10590041
申请日：2006-01-17
申请人： Satoshi Seo , Takeshi Noda , Shunpei Yamazaki
发明人： Satoshi Seo , Takeshi Noda , Shunpei Yamazaki
IPC分类号： H01L29/06
CPC分类号： H01L51/5278 , H01L27/3211 , H01L27/3244 , H01L27/3267 , H01L51/5044 , H01L51/5218 , H01L51/5265
摘要： It is an object of the invention to provide a light emitting device which can display a superior image in which luminescent color from each light emitting layer is beautifully displayed and power consumption is lowered in a light emitting element in which light emitting layers are stacked. One feature of the invention is that, in a light emitting element which comprises light emitting layers stacked between electrodes, each distance between each light emitting layer and an electrode is approximately oddly multiplied ¼ wavelength by controlling a thickness of a layer provided therebetween to enhance luminous output efficiency. Another feature of the invention is that a drive voltage is lowered using a high conductive material for the layer compared with a conventional element.
摘要翻译：发明内容本发明的目的在于提供一种发光装置，其能够显示优异的图像，其中来自每个发光层的发光颜色被精美地显示，并且功率消耗在层叠有发光层的发光元件中降低。本发明的一个特征在于，在包含层叠在电极之间的发光层的发光元件中，通过控制其间设置的层的厚度来增强发光，每个发光层和电极之间的距离几乎是奇数倍的1/4波长输出效率。本发明的另一个特征是与常规元件相比，使用用于该层的高导电材料驱动电压降低。

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