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    • 28. 发明申请
    • Substrate Support with Gas Introduction Openings
    • 基板支持与气体介绍开放
    • US20120149194A1
    • 2012-06-14
    • US13401755
    • 2012-02-21
    • SAM H. KIMJohn M. WhiteSoo Young ChoiCarl A. SorensenRobin L. TinerBeom Soo Park
    • SAM H. KIMJohn M. WhiteSoo Young ChoiCarl A. SorensenRobin L. TinerBeom Soo Park
    • H01L21/28
    • H01L21/68742H01L21/6831
    • Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.
    • 本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。 当将大面积基板放置在基板支撑件上时,由于可能存在于基板和基板支撑件之间的气体袋,基板可能不能完全与基板支撑件齐平。 气袋可导致基板上的不均匀沉积。 因此,从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。 在沉积期间,静电电荷可能积聚并使衬底粘附到衬底支撑件上。 通过在衬底和衬底支撑件之间引入气体,可以克服静电力,使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。
    • 29. 发明申请
    • Plasma Uniformity Control By Gas Diffuser Hole Design
    • 通过气体扩散器孔设计的等离子体均匀性控制
    • US20110290183A1
    • 2011-12-01
    • US13207227
    • 2011-08-10
    • Soo Young ChoiJohn M. WhiteQunhua WangLi HouKi Woon KimShinichi KuritaTae Kyung WonSuhail AnwarBeom Soo ParkRobin L. Tiner
    • Soo Young ChoiJohn M. WhiteQunhua WangLi HouKi Woon KimShinichi KuritaTae Kyung WonSuhail AnwarBeom Soo ParkRobin L. Tiner
    • C23C16/455
    • H01J37/3244C23C16/345C23C16/455C23C16/45565C23C16/5096H01J37/32082H01J37/32091H01J37/32541H01J37/32596H01J2237/327H01J2237/3321H01J2237/3323H01J2237/3325Y10T29/49885Y10T29/49996
    • Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
    • 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板,以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔,以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度,直径,表面积和密度可以从扩散板的中心到边缘逐渐增加,以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径,深度和表面积的增加可以通过向下游侧弯曲扩散板,然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径,深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加,深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。