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21. 外观设计

USD701329S1 Substrate support 有权
标题翻译：基材支持
公开(公告)号：USD701329S1
公开(公告)日：2014-03-18
申请号：US29413676
申请日：2012-02-17
申请人： Robin L. Tiner , Shinichi Kurita
设计人： Robin L. Tiner , Shinichi Kurita

22. 外观设计

USD685335S1 Substrate support 有权
标题翻译：基材支持
公开(公告)号：USD685335S1
公开(公告)日：2013-07-02
申请号：US29379883
申请日：2010-11-24
申请人： Robin L. Tiner
设计人： Robin L. Tiner

23. 外观设计

USD680946S1 Gas flow diffuser faceplate 有权
标题翻译：气流扩散面板
公开(公告)号：USD680946S1
公开(公告)日：2013-04-30
申请号：US29353504
申请日：2010-01-09
申请人： Suhail Anwar , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner
设计人： Suhail Anwar , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner

24. 发明授权

US08430961B2 Source gas flow path control in PECVD system to control a by-product film deposition on inside chamber 有权
标题翻译： PECVD系统中的源气体流路控制，用于控制室内副产物膜沉积
公开(公告)号：US08430961B2
公开(公告)日：2013-04-30
申请号：US12205363
申请日：2008-09-05
申请人： Beom Soo Park , Young Jin Choi , Robin L. Tiner , Sam H. Kim , Soo Young Choi , John M. White , Dong-Kil Yim
发明人： Beom Soo Park , Young Jin Choi , Robin L. Tiner , Sam H. Kim , Soo Young Choi , John M. White , Dong-Kil Yim
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： C23C16/45502 , C23C16/4401
摘要： The present invention generally comprises a method and an apparatus for guiding the flow of processing gases away from chamber walls and slit valve opening. By controlling the flow path of the process gases within a processing chamber, undesirable deposition upon chamber walls and within slit valve openings may be reduced. By reducing deposition in slit valve openings, flaking may be reduced. By reducing deposition on chamber walls, the time between chamber cleaning may be increased. Thus, guiding the flow of processing gases within the processing chamber may increase substrate throughput.
摘要翻译：本发明通常包括一种用于将处理气体的流动引导离开室壁和狭缝阀开口的方法和装置。通过控制处理室内的处理气体的流动路径，可以减少在室壁上和狭缝阀开口内的不期望的沉积。通过减少狭缝阀开口中的沉积，可能会降低剥落。通过减少室壁上的沉积，可以增加室清洁之间的时间。因此，引导处理室内的处理气体的流动可以增加衬底生产量。

25. 外观设计

USD675172S1 Substrate support 有权
公开(公告)号：USD675172S1
公开(公告)日：2013-01-29
申请号：US29379881
申请日：2010-11-24
申请人： Robin L. Tiner
设计人： Robin L. Tiner

26. 外观设计

USD669032S1 Flow blocking shadow frame support 有权
标题翻译：流阻挡影框支持
公开(公告)号：USD669032S1
公开(公告)日：2012-10-16
申请号：US29353503
申请日：2010-01-09
申请人： Suhail Anwar , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner
设计人： Suhail Anwar , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner

27. 发明申请

US20120231181A1 INSULATION COVERAGE OF CVD ELECTRODE 审中-公开
标题翻译： CVD电极的绝缘覆盖
公开(公告)号：US20120231181A1
公开(公告)日：2012-09-13
申请号：US13405488
申请日：2012-02-27
申请人： Suhail Anwar , Robin L. Tiner
发明人： Suhail Anwar , Robin L. Tiner
IPC分类号： C23C16/505 , B32B3/04 , C23C16/50
CPC分类号： C23C16/52 , C23C16/452 , C23C16/505 , C23C28/30 , Y10T428/24264
摘要： Embodiments of the present invention relate to apparatus and methods for preventing arcing between a RF hot chamber components and grounded chamber body. One embodiment of the present invention provides an insulation cover for using in a plasma processing chamber. The insulation cover comprises a frame having an inner window for accommodating a gas distribution showerhead therein. The frame has an L-shaped cross section and configured to shield both a vertical portion and a horizontal portion of a chamber component from the gas distribution showerhead.
摘要翻译：本发明的实施例涉及用于防止RF热室部件和接地室主体之间的电弧的装置和方法。本发明的一个实施例提供一种用于在等离子体处理室中使用的绝缘盖。绝缘盖包括具有用于在其中容纳气体分配喷头的内窗的框架。框架具有L形横截面，并且构造成将腔室部件的垂直部分和水平部分与气体分配喷头相屏蔽。

28. 发明申请

US20120149194A1 Substrate Support with Gas Introduction Openings 有权
标题翻译：基板支持与气体介绍开放
公开(公告)号：US20120149194A1
公开(公告)日：2012-06-14
申请号：US13401755
申请日：2012-02-21
申请人： SAM H. KIM , John M. White , Soo Young Choi , Carl A. Sorensen , Robin L. Tiner , Beom Soo Park
发明人： SAM H. KIM , John M. White , Soo Young Choi , Carl A. Sorensen , Robin L. Tiner , Beom Soo Park
IPC分类号： H01L21/28
CPC分类号： H01L21/68742 , H01L21/6831
摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.
摘要翻译：本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。当将大面积基板放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全与基板支撑件齐平。气袋可导致基板上的不均匀沉积。因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。在沉积期间，静电电荷可能积聚并使衬底粘附到衬底支撑件上。通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。

29. 发明申请

US20110290183A1 Plasma Uniformity Control By Gas Diffuser Hole Design 有权
标题翻译：通过气体扩散器孔设计的等离子体均匀性控制
公开(公告)号：US20110290183A1
公开(公告)日：2011-12-01
申请号：US13207227
申请日：2011-08-10
申请人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
发明人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
IPC分类号： C23C16/455
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译：提供了用于在处理室中分配气体的气体扩散板的实施例。气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性。从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。扩散板的弯曲可以通过热处理或真空工艺来实现。从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

30. 外观设计

USD627625S1 Shadow frame support 有权
标题翻译：阴影框支持
公开(公告)号：USD627625S1
公开(公告)日：2010-11-23
申请号：US29353472
申请日：2010-01-08
申请人： Suhail Anwar , John M. White , Jeffrey A. Kho , Robin L. Tiner
设计人： Suhail Anwar , John M. White , Jeffrey A. Kho , Robin L. Tiner

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