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1. 发明申请

US20090064934A1 SOURCE GAS FLOW PATH CONTROL IN PECVD SYSTEM TO CONTROL A BY-PRODUCT FILM DEPOSITION ON INSIDE CHAMBER 有权
标题翻译： PECVD系统中的源气体流路控制，用于控制室内副产物膜沉积
公开(公告)号：US20090064934A1
公开(公告)日：2009-03-12
申请号：US12205363
申请日：2008-09-05
申请人： BEOM SOO PARK , Young Jin Choi , Robin L. Tiner , Sam H. Kim , Soo Young Choi , John M. White , Dong-Kil Yim
发明人： BEOM SOO PARK , Young Jin Choi , Robin L. Tiner , Sam H. Kim , Soo Young Choi , John M. White , Dong-Kil Yim
IPC分类号： C23C16/513
CPC分类号： C23C16/45502 , C23C16/4401
摘要： The present invention generally comprises a method and an apparatus for guiding the flow of processing gases away from chamber walls and slit valve opening. By controlling the flow path of the process gases within a processing chamber, undesirable deposition upon chamber walls and within slit valve openings may be reduced. By reducing deposition in slit valve openings, flaking may be reduced. By reducing deposition on chamber walls, the time between chamber cleaning may be increased. Thus, guiding the flow of processing gases within the processing chamber may increase substrate throughput.
摘要翻译：本发明通常包括一种用于将处理气体的流动引导离开室壁和狭缝阀开口的方法和装置。通过控制处理室内的处理气体的流动路径，可以减少在室壁上和狭缝阀开口内的不期望的沉积。通过减少狭缝阀开口中的沉积，可能会降低剥落。通过减少室壁上的沉积，可以增加室清洁之间的时间。因此，引导处理室内的处理气体的流动可以增加衬底生产量。

2. 发明授权

US08430961B2 Source gas flow path control in PECVD system to control a by-product film deposition on inside chamber 有权
标题翻译： PECVD系统中的源气体流路控制，用于控制室内副产物膜沉积
公开(公告)号：US08430961B2
公开(公告)日：2013-04-30
申请号：US12205363
申请日：2008-09-05
申请人： Beom Soo Park , Young Jin Choi , Robin L. Tiner , Sam H. Kim , Soo Young Choi , John M. White , Dong-Kil Yim
发明人： Beom Soo Park , Young Jin Choi , Robin L. Tiner , Sam H. Kim , Soo Young Choi , John M. White , Dong-Kil Yim
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： C23C16/45502 , C23C16/4401
摘要： The present invention generally comprises a method and an apparatus for guiding the flow of processing gases away from chamber walls and slit valve opening. By controlling the flow path of the process gases within a processing chamber, undesirable deposition upon chamber walls and within slit valve openings may be reduced. By reducing deposition in slit valve openings, flaking may be reduced. By reducing deposition on chamber walls, the time between chamber cleaning may be increased. Thus, guiding the flow of processing gases within the processing chamber may increase substrate throughput.
摘要翻译：本发明通常包括一种用于将处理气体的流动引导离开室壁和狭缝阀开口的方法和装置。通过控制处理室内的处理气体的流动路径，可以减少在室壁上和狭缝阀开口内的不期望的沉积。通过减少狭缝阀开口中的沉积，可能会降低剥落。通过减少室壁上的沉积，可以增加室清洁之间的时间。因此，引导处理室内的处理气体的流动可以增加衬底生产量。

3. 发明授权

US08853098B2 Substrate support with gas introduction openings 有权
标题翻译：衬底支撑与气体导入孔
公开(公告)号：US08853098B2
公开(公告)日：2014-10-07
申请号：US13401755
申请日：2012-02-21
申请人： Sam H. Kim , John M. White , Soo Young Choi , Carl A. Sorensen , Robin L. Tiner , Beom Soo Park
发明人： Sam H. Kim , John M. White , Soo Young Choi , Carl A. Sorensen , Robin L. Tiner , Beom Soo Park
IPC分类号： H01L21/00 , H01L21/44 , H01L21/31 , H01L21/469 , H01L21/687 , H01L21/683
CPC分类号： H01L21/68742 , H01L21/6831
摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.
摘要翻译：本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。当将大面积基板放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全与基板支撑件齐平。气袋可导致基板上的不均匀沉积。因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。在沉积期间，静电电荷可能积聚并使衬底粘附到衬底支撑件上。通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。

4. 发明申请

US20100184290A1 SUBSTRATE SUPPORT WITH GAS INTRODUCTION OPENINGS 审中-公开
标题翻译：基础支持与气体介绍开幕
公开(公告)号：US20100184290A1
公开(公告)日：2010-07-22
申请号：US12686483
申请日：2010-01-13
申请人： Sam H. Kim , John M. White , Soo Young Choi , Carl A. Sorensen , Robin L. Tiner , Beom Soo Park
发明人： Sam H. Kim , John M. White , Soo Young Choi , Carl A. Sorensen , Robin L. Tiner , Beom Soo Park
IPC分类号： H01L21/28
CPC分类号： H01L21/68742 , H01L21/6831
摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.
摘要翻译：本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。当将大面积基板放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全与基板支撑件齐平。气袋可导致基板上的不均匀沉积。因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。在沉积期间，静电电荷可能积聚并使衬底粘附到衬底支撑件上。通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。

5. 发明申请

US20120009347A1 PRECISE TEMPERATURE CONTROL FOR TEOS APPLICATION BY HEAT TRANSFER FLUID 审中-公开
标题翻译：通过热传递流体对TEOS应用的精密温度控制
公开(公告)号：US20120009347A1
公开(公告)日：2012-01-12
申请号：US12831731
申请日：2010-07-07
申请人： Dongsuh Lee , Weijie Wang , William N. Sterling , Sam H. Kim , Soo Young Choi , Beom Soo Park , Beom Soo Kim , Qunhua Wang
发明人： Dongsuh Lee , Weijie Wang , William N. Sterling , Sam H. Kim , Soo Young Choi , Beom Soo Park , Beom Soo Kim , Qunhua Wang
IPC分类号： C23C16/52 , B01F15/06 , C23C16/00 , B01F15/02
CPC分类号： B01F5/0077 , B01F5/0688 , B01F15/065 , B01F2015/061 , C23C16/45512
摘要： Embodiments of the invention generally provide a mixing block for mixing precursors and/or cleaning agent which has the advantage of maintaining the temperature and improving the mixing effect of the precursors, cleaning agent or the mixture thereof to eliminate the substrate-to-substrate variation, thereby providing improved process uniformity.
摘要翻译：本发明的实施方案通常提供用于混合前体和/或清洁剂的混合块，其具有保持温度并改善前体，清洁剂或其混合物的混合效果以消除基材对基底变化的优点，从而提供改进的工艺均匀性。

6. 发明申请

US20130071581A1 PLASMA MONITORING AND MINIMIZING STRAY CAPACITANCE 审中-公开
标题翻译：等离子体监测和最小化流动电容
公开(公告)号：US20130071581A1
公开(公告)日：2013-03-21
申请号：US13622955
申请日：2012-09-19
申请人： Jonghoon Baek , Sam H. Kim , Beom Soo Park , John M. White , Shinichi Kunita , Hsiao-Lin Yang
发明人： Jonghoon Baek , Sam H. Kim , Beom Soo Park , John M. White , Shinichi Kunita , Hsiao-Lin Yang
IPC分类号： H05H1/46
CPC分类号： H05H1/46 , H01J37/32091 , H01J37/32183 , H01J37/32935
摘要： The present invention generally relates to a capacitively coupled plasma (CCP) processing chamber, a manner to reduce or prevent stray capacitance, and a manner to measure plasma conditions within the processing chamber. As CCP processing chambers increase in size, there is a tendency for stray capacitance to negatively impact the process. Additionally, RF ground straps may break. By increasing the spacing between the chamber backing plate and the chamber wall, stray capacitance may be minimized. Additionally, the plasma may be monitored by measuring the conditions of the plasma at the backing plate rather than at the match network. In so measuring, the plasma harmonic data may be analyzed to reveal plasma processing conditions within the chamber.
摘要翻译：本发明一般涉及电容耦合等离子体（CCP）处理室，减少或防止杂散电容的方式，以及测量处理室内等离子体状态的方式。随着CCP处理室的尺寸增加，杂散电容的趋势将对工艺产生负面影响。另外，射频接地带可能会断开。通过增加腔室背板和室壁之间的间隔，杂散电容可以最小化。此外，可以通过测量背板上的等离子体的条件而不是在匹配网络来监测等离子体。在这样的测量中，可以分析等离子体谐波数据以显示室内的等离子体处理条件。

7. 发明授权

US08875657B2 Balancing RF bridge assembly 有权
标题翻译：平衡射频桥组件
公开(公告)号：US08875657B2
公开(公告)日：2014-11-04
申请号：US13014113
申请日：2011-01-26
申请人： Jonghoon Baek , Sam H. Kim , Beom Soo Park
发明人： Jonghoon Baek , Sam H. Kim , Beom Soo Park
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , C23C16/505
CPC分类号： C23C16/505
摘要： Embodiments disclosed herein generally relate to a PECVD apparatus. When the RF power source is coupled to the electrode at multiple locations, the current and voltage may be different at the multiple locations. In order to ensure that both the current and voltage are substantially identical at the multiple locations, an RF bridge assembly may be coupled between the multiple locations at a location just before connection to the electrode. The RF bridge assembly substantially equalizes the voltage distribution and current distribution between multiple locations. Therefore, a substantially identical current and voltage is applied to the electrode at the multiple locations.
摘要翻译：本文公开的实施例一般涉及PECVD装置。当RF电源在多个位置耦合到电极时，电流和电压在多个位置可能是不同的。为了确保电流和电压在多个位置处基本上相同，RF桥组件可以在连接到电极之前的位置处耦合在多个位置之间。 RF桥组件基本上均衡多个位置之间的电压分布和电流分布。因此，在多个位置处对电极施加基本相同的电流和电压。

8. 发明申请

US20110185972A1 BALANCING RF BRIDGE ASSEMBLY 有权
标题翻译：平衡射频桥组件
公开(公告)号：US20110185972A1
公开(公告)日：2011-08-04
申请号：US13014113
申请日：2011-01-26
申请人： Jonghoon Baek , Sam H. Kim , Beom Soo Park
发明人： Jonghoon Baek , Sam H. Kim , Beom Soo Park
IPC分类号： C23C16/505 , C23C16/455
CPC分类号： C23C16/505
摘要： Embodiments disclosed herein generally relate to a PECVD apparatus. When the RF power source is coupled to the electrode at multiple locations, the current and voltage may be different at the multiple locations. In order to ensure that both the current and voltage are substantially identical at the multiple locations, an RF bridge assembly may be coupled between the multiple locations at a location just before connection to the electrode. The RF bridge assembly substantially equalizes the voltage distribution and current distribution between multiple locations. Therefore, a substantially identical current and voltage is applied to the electrode at the multiple locations.
摘要翻译：本文公开的实施例一般涉及PECVD装置。当RF电源在多个位置耦合到电极时，电流和电压在多个位置可能是不同的。为了确保电流和电压在多个位置处基本上相同，RF桥组件可以在连接到电极之前的位置处耦合在多个位置之间。 RF桥组件基本上均衡多个位置之间的电压分布和电流分布。因此，在多个位置处对电极施加基本相同的电流和电压。

9. 发明授权

US4958481A Box-cording apparatus 失效
标题翻译：盒装设备
公开(公告)号：US4958481A
公开(公告)日：1990-09-25
申请号：US264279
申请日：1988-10-18
申请人： Sam H. Kim
发明人： Sam H. Kim
IPC分类号： B65B20060101 , B65B13/02 , B65B67/00
CPC分类号： B65B13/02 , B65B67/00
摘要： A box-cording apparatus used to cord up a packing box. The apparatus comprises a frame means having a base frame and support members slidably installed thereon, a driving means for moving the support members back and forth, and a frame rotating means having a shaft and a control means for the rotation of the shaft. The support members are bound together with parts of the box loaded on the base frame during the cording work and then pulled and received in the base frame, getting free from the corded parts of the box.
摘要翻译： PCT No.PCT / KR88 / 00005 Sec。 371日期：1988年10月18日 102（e）日期1988年10月18日PCT提交1988年2月19日PCT公布。出版物WO88 / 06124 日期1988年8月25日。一种用于打包包装盒的盒装设备。该装置包括框架装置，该框架装置具有底座和可滑动地安装在其上的支撑构件，用于前后移动支撑构件的驱动装置和具有轴的框架旋转装置和用于轴的旋转的控制装置。在绳索加工期间，支撑构件与装载在基架上的箱体的一部分结合在一起，然后被拉入并接收在基架中，从箱体的有线部分脱离。

10. 发明授权

US07007919B2 Slit valve method and apparatus 失效
标题翻译：狭缝阀方法和装置
公开(公告)号：US07007919B2
公开(公告)日：2006-03-07
申请号：US10418682
申请日：2003-04-17
申请人： Wendell Blonigan , Emanuel Beer , Dongchoon Suh , Jaime Munoz , Sam H. Kim
发明人： Wendell Blonigan , Emanuel Beer , Dongchoon Suh , Jaime Munoz , Sam H. Kim
IPC分类号： F16K3/16
CPC分类号： H01L21/67126 , F16K51/02
摘要： An actuator assembly for a slit valve door is configured to maintain a slit valve in a closed condition notwithstanding a high pressure differential between adjacent chambers that the slit valve isolates from each other. The slit valve door actuator assembly includes an actuator which moves the slit valve door between open and closed positions, and a locking mechanism to keep the slit valve door in a position to seal the slit valve in resistance to high gas pressure against the slit valve door. The locking mechanism may include a hard stop which is selectively movable into position to block retracting movement of the slit valve door.
摘要翻译：用于狭缝阀门的致动器组件被配置为使狭缝阀保持在闭合状态，尽管狭缝阀彼此分离的相邻室之间具有高压差。狭缝阀门致动器组件包括使狭缝阀门在打开和关闭位置之间移动的致动器，以及锁定机构，以将狭缝阀门保持在密封狭缝阀的位置，以抵抗狭缝阀门的高气压。锁定机构可以包括硬挡块，其可选择性地移动到位置以阻挡狭缝阀门的缩回运动。

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