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21. 发明授权

US06884334B2 Vertically configured chamber used for multiple processes 有权
标题翻译：垂直配置的腔室用于多个过程
公开(公告)号：US06884334B2
公开(公告)日：2005-04-26
申请号：US10041058
申请日：2001-12-28
申请人： Konstantin Volodarsky , Boguslaw A. Nigorski , Rimma Volodarsky , Douglas W. Young , Cyprian Uzoh , Homayoun Talieh
发明人： Konstantin Volodarsky , Boguslaw A. Nigorski , Rimma Volodarsky , Douglas W. Young , Cyprian Uzoh , Homayoun Talieh
IPC分类号： C25D7/12 , H01L21/00 , H01L21/02 , H01L21/3063 , C25D5/00
CPC分类号： H01L21/6719 , C25D7/12 , C25D17/001 , H01L21/67028 , Y10S134/902
摘要： The present invention relates to a containment chamber that is used for carrying out multiple processing steps such as depositing on, polishing, etching, modifying, rinsing, cleaning, and drying a surface on the workpiece. In one example of the present invention, the chamber is used to electro chemically mechanically deposit a conductive material on a semiconductor wafer. The same containment chamber can then be used to rinse and clean the same wafer. As a result, the present invention eliminates the need for separate processing stations for depositing the conductive material and cleaning the wafer. Thus, with the present invention, costs and physical space are reduced while providing an efficient apparatus and method for carrying out multiple processes on the wafer surface using a containment chamber.
摘要翻译：本发明涉及一种用于进行多个处理步骤的容纳室，例如沉积，抛光，蚀刻，改性，漂洗，清洁和干燥工件上的表面。在本发明的一个实例中，室用于在半导体晶片上化学机械地沉积导电材料。然后可以使用相同的容纳室来冲洗和清洁相同的晶片。结果，本发明消除了对用于沉积导电材料和清洁晶片的单独处理站的需要。因此，利用本发明，降低了成本和物理空间，同时提供了使用容纳室在晶片表面上执行多个工艺的有效的装置和方法。

22. 发明申请

US20050040049A1 Anode assembly for plating and planarizing a conductive layer 审中-公开
标题翻译：用于电镀和平坦化导电层的阳极组件
公开(公告)号：US20050040049A1
公开(公告)日：2005-02-24
申请号：US10914490
申请日：2004-08-10
申请人： Rimma Volodarsky , Konstantin Volodarsky , Cyprian Uzoh , Homayoun Talieh , Douglas Young
发明人： Rimma Volodarsky , Konstantin Volodarsky , Cyprian Uzoh , Homayoun Talieh , Douglas Young
IPC分类号： B23H7/00 , C25D5/08 , C25D7/12 , C25D17/10 , H01L21/288 , H01L21/768
CPC分类号： C25D17/001 , C25D5/08 , C25D17/008 , C25D17/10 , H01L21/2885 , H01L21/7684 , H01L21/76877
摘要： A particular anode assembly can be used to supply a solution for any of a plating operation, a planarization operation, and a plating and planarization operation to be performed on a semiconductor wafer. The anode assembly includes a rotatable shaft disposed within a chamber in which the operation is performed, an anode housing connected to the shaft, and a porous pad support plate attached to the anode housing. The support plate has a top surface adapted to support a pad which is to face the wafer, and, together with the anode housing, defines an anode cavity. A consumable anode may be provided in the anode cavity to provide plating material to the solution. A solution delivery structure by which the solution can be delivered to said anode cavity is also provided. The solution delivery structure may be contained within the chamber in which the operation is performed. A shield can also be mounted between the shaft and an associated spindle to prevent leakage of the solution from the chamber.
摘要翻译：可以使用特定的阳极组件来提供用于在半导体晶片上进行的电镀操作，平面化操作和电镀和平面化操作中的任何一种的解决方案。阳极组件包括设置在其中执行操作的室内的可旋转轴，连接到轴的阳极壳体和附接到阳极壳体的多孔垫支撑板。支撑板具有适于支撑面向晶片的焊盘的顶表面，并且与阳极壳体一起限定阳极腔。可以在阳极腔中设置消耗性阳极以向溶液提供电镀材料。还提供了可以将溶液输送到所述阳极腔的溶液输送结构。溶液输送结构可以包含在进行操作的室内。护罩还可以安装在轴和相关主轴之间，以防止溶液从腔室泄漏。

23. 发明授权

US06352623B1 Vertically configured chamber used for multiple processes 有权
公开(公告)号：US06352623B1
公开(公告)日：2002-03-05
申请号：US09466014
申请日：1999-12-17
申请人： Konstantin Volodarsky , Boguslaw A. Nagorski , Rimma Volodarsky , Douglas W. Young , Cyprian Uzoh , Homayoun Talieh
发明人： Konstantin Volodarsky , Boguslaw A. Nagorski , Rimma Volodarsky , Douglas W. Young , Cyprian Uzoh , Homayoun Talieh
IPC分类号： C25B900
CPC分类号： H01L21/6719 , C25D7/12 , C25D17/001 , H01L21/67028 , Y10S134/902
摘要： The present invention relates to a containment chamber that is used for carrying out multiple processing steps such as depositing on, polishing, etching, modifying, rinsing, cleaning, and drying a surface on the workpiece. In one example of the present invention, the chamber is used to electro chemically mechanically deposit a conductive material on a semiconductor wafer. The same containment chamber can then be used to rinse and clean the same wafer. As a result, the present invention eliminates the need for separate processing stations for depositing the conductive material and cleaning the wafer. Thus, with the present invention, costs and physical space are reduced while providing an efficient apparatus and method for carrying out multiple processes on the wafer surface using a containment chamber.

24. 发明授权

US5803799A Wafer polishing head 失效
标题翻译：晶圆抛光头
公开(公告)号：US5803799A
公开(公告)日：1998-09-08
申请号：US879862
申请日：1997-06-20
申请人： Konstantin Volodarsky , David E. Weldon
发明人： Konstantin Volodarsky , David E. Weldon
IPC分类号： B24B37/30 , B24B5/00 , B24B29/00
CPC分类号： B24B37/30
摘要： A polishing head for polishing a semiconductor wafer includes a housing, a wafer carrier movably mounted to the housing, and a wafer retainer movably mounted to the housing. The wafer carrier forms a wafer supporting surface, and the wafer retainer is shaped to retain a wafer in place on the wafer-supporting surface. A first fluid actuator is coupled to the wafer carrier to bias the wafer carrier in a selected direction with respect to the housing, and a second fluid actuator is coupled to the wafer retainer to bias the wafer retainer in a second selected direction with respect to the housing. First and second fluid conduits are coupled to the first and second actuators, respectively, such that fluid pressures in the first and second actuators are separately and independently adjustable with respect to one another. Biasing forces on the retainer can thereby be dynamically adjusted with respect to biasing forces on the carrier during the polishing operation.
摘要翻译：用于抛光半导体晶片的抛光头包括壳体，可移动地安装到壳体的晶片载体和可移动地安装到壳体的晶片保持架。晶片载体形成晶片支撑表面，并且晶片保持器成形为将晶片保持在晶片支撑表面上的适当位置。第一流体致动器耦合到晶片载体，以相对于壳体在选定的方向上偏置晶片载体，并且第二流体致动器耦合到晶片保持器，以将晶片保持器相对于第二选定方向偏置住房。第一和第二流体管道分别联接到第一和第二致动器，使得第一和第二致动器中的流体压力彼此独立且可独立地调节。因此，可以在抛光操作期间相对于载体上的偏压力动态地调节保持器上的偏压力。

25. 发明授权

US5800248A Control of chemical-mechanical polishing rate across a substrate surface 失效
标题翻译：控制衬底表面的化学机械抛光速率
公开(公告)号：US5800248A
公开(公告)日：1998-09-01
申请号：US638464
申请日：1996-04-26
申请人： Anil K. Pant , Douglas W. Young , Anthony S. Meyer , Konstantin Volodarsky , David E. Weldon
发明人： Anil K. Pant , Douglas W. Young , Anthony S. Meyer , Konstantin Volodarsky , David E. Weldon
IPC分类号： B24B37/04 , B24B49/00 , B24B57/02 , B24B1/00
CPC分类号： B24B49/00 , B24B37/04 , B24B57/02
摘要： A technique for controlling a polishing rate across a substrate surface when performing CMP, in order to obtain uniform polishing of the substrate surface. A support housing which underlies a polishing pad includes a plurality of openings for dispensing a pressurized fluid. The openings are arranged into a pre-configured pattern for dispensing the fluid to the underside of the pad opposite the substrate surface being polished. The openings are configured into a number of groupings, in which a separate channel is used for each grouping so that fluid pressure for each group of openings can be separately and independently controlled.
摘要翻译：一种用于在进行CMP时控制衬底表面的抛光速率的技术，以便获得衬底表面的均匀抛光。在抛光垫下面的支撑壳体包括用于分配加压流体的多个开口。开口被布置成预先配置的图案，用于将流体分配到衬垫的与待抛光的衬底表面相对的底面。开口被配置成多个分组，其中每个分组使用单独的通道，使得每组开口的流体压力可以单独和独立地控制。

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