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21. 发明授权

US08451418B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US08451418B2
公开(公告)日：2013-05-28
申请号：US13283674
申请日：2011-10-28
申请人： Jun Gotoh , Hirotaka Imayama , Shinichi Komura , Masato Shimura
发明人： Jun Gotoh , Hirotaka Imayama , Shinichi Komura , Masato Shimura
IPC分类号： G02F1/1339
CPC分类号： H01L33/0041 , G02F1/134309 , G02F1/136286 , G02F1/1368 , G02F2201/123 , G02F2201/40
摘要： A liquid crystal display device having a high definition screen in which a pixel electrode is formed in a region surrounded by a gate line and a drain line, and a trapezoidal protrusion having an upper surface and inclined surfaces is formed below the gate line. Since a TFT is formed over a trapezoidal protrusion and a channel portion is formed over the upper surface and the inclined surfaces of the trapezoidal protrusion, the width of the channel portion can be enlarged compared to that of a channel portion formed over a plane. The pixel electrode is in contact with a source electrode at the inclined surface of the trapezoidal protrusion. This configuration allows the TFT and a contact of the pixel electrode and a source electrode to be formed over part of the trapezoidal protrusion.
摘要翻译：一种具有高清晰度屏幕的液晶显示装置，其中栅极线形成在栅极线和漏极线所围绕的区域中的像素电极和具有上表面和倾斜表面的梯形突起。由于TFT形成在梯形突起上，并且在梯形突起的上表面和倾斜表面上形成通道部分，所以与通过平面形成的通道部分相比，可以扩大通道部分的宽度。像素电极在梯形突起的倾斜表面处与源电极接触。该构造允许TFT和像素电极与源电极的接触部分形成在梯形突起的一部分上。

22. 发明授权

US08284364B2 Active matrix display device 有权
标题翻译：主动矩阵显示装置
公开(公告)号：US08284364B2
公开(公告)日：2012-10-09
申请号：US12765105
申请日：2010-04-22
申请人： Ichiro Yamakawa , Kazuhiko Horikoshi , Naotoshi Akamatsu , Jun Gotoh , Hiroaki Asuma
发明人： Ichiro Yamakawa , Kazuhiko Horikoshi , Naotoshi Akamatsu , Jun Gotoh , Hiroaki Asuma
IPC分类号： G02F1/1333
CPC分类号： G02F1/136286 , G02F1/136213 , G02F1/136227
摘要： Provided is a technology for preventing current leak of a charge holding capacitor which constitutes a pixel of a display device so as to prevent deterioration of display image quality of the display device. The display device includes a first contact hole connecting a first wiring layer and a second wiring layer which is formed over the first wiring layer, a second contact hole connecting the second wiring layer and a third wiring layer which is formed over the second wiring layer, and an electrode layer formed between the plurality of insulating films disposed between the second wiring layer and the third wiring layer, wherein at a position in a substrate surface direction, a distance between a electrode layer and the second contact hole is larger than a distance between the electrode layer and the first contact hole.
摘要翻译：提供了一种用于防止构成显示装置的像素的电荷保持电容器的电流泄漏的技术，以防止显示装置的显示图像质量的劣化。该显示装置包括连接第一布线层和形成在第一布线层上的第二布线层的第一接触孔，连接第二布线层的第二接触孔和形成在第二布线层上的第三布线层，以及形成在所述第二布线层和所述第三布线层之间的所述多个绝缘膜之间的电极层，其中，在基板表面方向的位置处，电极层与所述第二接触孔之间的距离大于电极层和第一接触孔。

23. 发明申请

US20100309421A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20100309421A1
公开(公告)日：2010-12-09
申请号：US12785890
申请日：2010-05-24
申请人： Jun Gotoh , Takanori Nakayama
发明人： Jun Gotoh , Takanori Nakayama
IPC分类号： G02F1/1345
CPC分类号： H01L22/32 , G02F1/1309 , G02F1/1339 , G02F1/136259 , G02F1/1368 , G02F2001/136254 , H01L27/124 , H01L27/3276
摘要： In a liquid crystal display device it is desirable to test in the state of TFT substrates, without reducing the number of TFT substrates to be obtained from one mother TFT substrate, and without increasing the overall size of the TFT substrates. Test terminals are formed on the outside of terminals for driving the liquid crystal display device. The test terminals of the specific TFT substrate are formed in another TFT substrate just below the specific TFT substrate. The area in which the test lines are formed is a space in which a sealing material is formed, between the display area and an end of the lower TFT substrate. Thus, the size of the TFT substrates is not actually increased. A test line area is not separately formed and not discarded, so that the number of TFT substrates to be obtained from one mother TFT substrate is not reduced.
摘要翻译：在液晶显示装置中，期望在TFT基板的状态下进行测试，而不会减少从一个母TFT基板获得的TFT基板的数量，并且不增加TFT基板的整体尺寸。测试端子形成在用于驱动液晶显示装置的端子的外侧。特定TFT基板的测试端子形成在特定TFT基板正下方的另一TFT基板中。在显示区域和下部TFT基板的一端之间，形成测试线的区域是形成密封材料的空间。因此，TFT基板的尺寸实际上没有增加。测试线区域不是单独形成并且不被丢弃，所以从一个母TFT基板获得的TFT基板的数量不会减少。

24. 发明申请

US20100309416A1 LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：液晶显示装置
公开(公告)号：US20100309416A1
公开(公告)日：2010-12-09
申请号：US12790063
申请日：2010-05-28
申请人： Jun GOTOH
发明人： Jun GOTOH
IPC分类号： G02F1/1337
CPC分类号： G02F1/1337 , G02F1/133514 , G02F1/133516 , G02F2001/133388 , G02F2001/133519
摘要： There is provided a liquid crystal display device having color filters on a side of a TFT substrate, in which an orientation film is formed by inkjet printing. The formation of an orientation film by inkjet printing is more advantageous than the conventional flexographic printing in terms of the production cost. It is necessary, however, to reduce the viscosity of the orientation film to be applied by inkjet printing. For this reason, first and second orientation film stoppers are formed between a display area and a sealing portion in a TFT substrate, to prevent the orientation film from flowing to an end of the TFT substrate. The orientation film stoppers are formed by the overlapping of color filters. A profile of the orientation film is defined by the first orientation film stopper. The second orientation film stopper is formed to ensure that the orientation film does not flow to the outside.
摘要翻译：在TFT基板的一侧设置有通过喷墨印刷形成取向膜的滤色器的液晶显示装置。通过喷墨印刷形成取向膜在生产成本方面比常规柔版印刷更有利。然而，有必要降低通过喷墨印刷施加的取向膜的粘度。为此，在TFT基板的显示区域和密封部分之间形成第一和第二取向膜阻挡件，以防止取向膜流向TFT基板的一端。取向膜止动器由滤色器的重叠形成。取向膜的轮廓由第一取向膜止动件限定。形成第二取向膜止动件以确保取向膜不流到外部。

25. 发明申请

US20100271582A1 ACTIVE MATRIX DISPLAY DEVICE 有权
标题翻译：主动矩阵显示设备
公开(公告)号：US20100271582A1
公开(公告)日：2010-10-28
申请号：US12765105
申请日：2010-04-22
申请人： Ichiro YAMAKAWA , Kazuhiko Horikoshi , Naotoshi Akamatsu , Jun Gotoh , Hiroaki Asuma
发明人： Ichiro YAMAKAWA , Kazuhiko Horikoshi , Naotoshi Akamatsu , Jun Gotoh , Hiroaki Asuma
IPC分类号： G02F1/1333
CPC分类号： G02F1/136286 , G02F1/136213 , G02F1/136227
摘要： Provided is a technology for preventing current leak of a charge holding capacitor which constitutes a pixel of a display device so as to prevent deterioration of display image quality of the display device. The display device includes a first contact hole connecting a first wiring layer and a second wiring layer which is formed over the first wiring layer, a second contact hole connecting the second wiring layer and a third wiring layer which is formed over the second wiring layer, and an electrode layer formed between the plurality of insulating films disposed between the second wiring layer and the third wiring layer, wherein at a position in a substrate surface direction, a distance between a electrode layer and the second contact hole is larger than a distance between the electrode layer and the first contact hole.
摘要翻译：提供了一种用于防止构成显示装置的像素的电荷保持电容器的电流泄漏的技术，以防止显示装置的显示图像质量的劣化。该显示装置包括连接第一布线层和形成在第一布线层上的第二布线层的第一接触孔，连接第二布线层的第二接触孔和形成在第二布线层上的第三布线层，以及形成在所述第二布线层和所述第三布线层之间的所述多个绝缘膜之间的电极层，其中，在基板表面方向的位置处，电极层与所述第二接触孔之间的距离大于电极层和第一接触孔。

26. 发明申请

US20100201932A1 LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
标题翻译：液晶显示装置
公开(公告)号：US20100201932A1
公开(公告)日：2010-08-12
申请号：US12700768
申请日：2010-02-05
申请人： Jun GOTOH , Miyo Ishii , Daisuke Sonoda
发明人： Jun GOTOH , Miyo Ishii , Daisuke Sonoda
IPC分类号： G02F1/1343
CPC分类号： G02F1/13439 , G02F1/133784 , G02F1/134363 , G02F1/13458 , G02F1/136227
摘要： An IPS liquid crystal display device having comb-teeth-shaped pixel electrodes which can prevent image retention while ensuring reliability of through hole portions and reliability of terminal area is provided. In an IPS liquid crystal display device having comb-teeth-shaped pixel electrodes, image retention occurs when rubbing is not applied to a gap defined between the comb-teeth-shaped electrodes. The pixel electrodes, through holes which supply a voltage to the pixel electrodes and a terminal area are formed of an ITO film. By setting a film thickness of only the ITO film for forming the pixel electrodes smaller than a film thickness of the ITO film formed at the through holes and a film thickness of the ITO film for forming the terminal area, it is possible to sufficiently apply rubbing to a gap between the comb-teeth-shaped electrodes which constitute the pixel electrodes.
摘要翻译：提供具有梳齿形像素电极的IPS液晶显示装置，其可以在确保通孔部分的可靠性和终端区域的可靠性的同时防止图像保持。在具有梳齿状像素电极的IPS液晶显示装置中，当不对在梳齿状电极之间限定的间隙进行摩擦时，发生图像保持。像素电极，向像素电极提供电压的通孔和端子区域由ITO膜形成。通过设置仅形成像素电极的ITO膜的膜厚小于形成在通孔处的ITO膜的膜厚度和用于形成端子区域的ITO膜的膜厚度，可以充分地施加摩擦到构成像素电极的梳齿状电极之间的间隙。

27. 发明授权

US07232716B2 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07232716B2
公开(公告)日：2007-06-19
申请号：US10891522
申请日：2004-07-15
申请人： Hironaru Yamaguchi , Kiyoshi Ogata , Takuo Tamura , Jun Gotoh , Masakazu Saito , Kazuo Takeda
发明人： Hironaru Yamaguchi , Kiyoshi Ogata , Takuo Tamura , Jun Gotoh , Masakazu Saito , Kazuo Takeda
IPC分类号： H01L21/66 , H01L21/268
CPC分类号： H01L21/02686 , G02F1/13454 , H01L21/02595 , H01L21/2026 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film, and the grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of an amorphous silicon film formed on a subsequent substrate is measured. A value of energy density of laser beam irradiation for the subsequent amorphous silicon film is calculated on the basis of the two average film thicknesses. Accordingly, a uniform polysilicon film of large grain sizes is formed on the whole surface of a large-size substrate to provide polysilicon TFTs in a large area.
摘要翻译：测量在基板上形成的非晶硅膜的平均膜厚。然后，用激光束照射非晶硅膜以形成多晶硅膜，并测量多晶硅膜的晶粒尺寸分布。基于在多晶硅膜的两点A和B测量的晶粒尺寸值来计算激光束照射的能量密度的最佳值。然后，测量形成在随后的基板上的非晶硅膜的平均膜厚。基于两个平均膜厚度计算随后的非晶硅膜的激光束照射的能量密度值。因此，在大尺寸基板的整个表面上形成均匀的大晶粒尺寸的多晶硅膜，以提供大面积的多晶硅TFT。

28. 发明授权

US07151046B2 Semiconductor thin film decomposing method, decomposed semiconductor thin film, decomposed semiconductor thin film evaluation method, thin film transistor made of decomposed semiconductor thin film, and image display device having circuit constituted of thin film transistors 失效
标题翻译：半导体薄膜分解方法，分解半导体薄膜，分解半导体薄膜评估方法，由分解的半导体薄膜制成的薄膜晶体管，以及具有由薄膜晶体管构成的电路的图像显示装置
公开(公告)号：US07151046B2
公开(公告)日：2006-12-19
申请号：US10900365
申请日：2004-07-28
申请人： Kazuo Takeda , Takeshi Sato , Masakazu Saito , Jun Gotoh
发明人： Kazuo Takeda , Takeshi Sato , Masakazu Saito , Jun Gotoh
IPC分类号： H01L21/20
CPC分类号： H01L21/02686 , B23K26/066 , B23K26/0738 , H01L21/02678 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675
摘要： A surface roughness of a polycrystalline semiconductor film to be formed by a laser annealing method is reduced. A transmittance distribution filter is disposed at the optical system of a laser annealing apparatus. The transmittance distribution filter controls an irradiation light intensity distribution along a scanning direction of a substrate formed with an amorphous silicon semiconductor thin film to have a distribution having an energy part equal to or higher than a fine crystal threshold on a high energy light intensity side and an energy part for melting and combining only a surface layer. This transmittance distribution filter is applied to an excimer laser annealing method, a phase shift stripe method or an SLS method respectively using a general line beam to thereby reduce the height of protrusions on a polycrystalline surface.
摘要翻译：通过激光退火法形成的多晶半导体膜的表面粗糙度降低。透射率分布滤光器设置在激光退火装置的光学系统中。透射率分布滤光器控制沿着形成有非晶硅半导体薄膜的基板的扫描方向的照射光强度分布，以具有在高能量光强度侧具有等于或高于精细晶体阈值的能量分布的分布，以及用于熔化和组合仅表面层的能量部分。该透射率分布滤波器分别应用于准分子激光退火方法，相移条纹法或SLS法，使用通用线束，从而降低多晶表面上的突起的高度。

29. 发明授权

US06933525B2 Display device and manufacturing method of the same 有权
标题翻译：显示装置及其制造方法相同
公开(公告)号：US06933525B2
公开(公告)日：2005-08-23
申请号：US10742896
申请日：2003-12-23
申请人： Yuichi Harano , Jun Gotoh , Toshiki Kaneko , Masanao Yamamoto
发明人： Yuichi Harano , Jun Gotoh , Toshiki Kaneko , Masanao Yamamoto
IPC分类号： G02F1/1368 , G09F9/30 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L21/77 , H01L23/52 , H01L29/417 , H01L29/45 , H01L29/786 , H01L27/01
CPC分类号： H01L21/28568 , G03G15/0131 , G03G15/1685 , G03G2215/0141 , H01L21/76843 , H01L21/76849 , H01L21/76856 , H01L27/124 , H01L29/458 , H01L29/66757 , H01L29/78603
摘要： The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.
摘要翻译：本发明防止了在与低温多晶硅接触的源/漏电极中使用铝基导电层时，在加热步骤中铝元素扩散到多晶硅层中，从而可以发生不良显示消除了在源/漏电极中使用铝基导电层，并且在铝基导电层和多晶硅层之间形成由钼制成的阻挡层或钼合金层。此外，在构成阻挡层的钼或钼合金的表面上形成在氮气氛中通过快速热处理（快速热退火）形成的氧化钼氮化物膜。

30. 发明申请

US20050139830A1 Semiconductor thin film decomposing method, decomposed semiconductor thin film, decomposed semiconductor thin film evaluation method, thin film transistor made of decomposed semiconductor thin film, and image display device having circuit constituted of thin film transistors 失效
标题翻译：半导体薄膜分解方法，分解半导体薄膜，分解半导体薄膜评估方法，由分解的半导体薄膜制成的薄膜晶体管，以及具有由薄膜晶体管构成的电路的图像显示装置
公开(公告)号：US20050139830A1
公开(公告)日：2005-06-30
申请号：US10900365
申请日：2004-07-28
申请人： Kazuo Takeda , Takeshi Sato , Masakazu Saito , Jun Gotoh
发明人： Kazuo Takeda , Takeshi Sato , Masakazu Saito , Jun Gotoh
IPC分类号： G02F1/1368 , B23K26/06 , B23K26/073 , H01L21/20 , H01L21/268 , H01L21/324 , H01L21/336 , H01L21/77 , H01L27/12 , H01L29/786 , H01L29/10
CPC分类号： H01L21/02686 , B23K26/066 , B23K26/0738 , H01L21/02678 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675
摘要： A surface roughness of a polycrystalline semiconductor film to be formed by a laser annealing method is reduced. A transmittance distribution filter is disposed at the optical system of a laser annealing apparatus. The transmittance distribution filter controls an irradiation light intensity distribution along a scanning direction of a substrate formed with an amorphous silicon semiconductor thin film to have a distribution having an energy part equal to or higher than a fine crystal threshold on a high energy light intensity side and an energy part for melting and combining only a surface layer. This transmittance distribution filter is applied to an excimer laser annealing method, a phase shift stripe method or an SLS method respectively using a general line beam to thereby reduce the height of protrusions on a polycrystalline surface.
摘要翻译：通过激光退火法形成的多晶半导体膜的表面粗糙度降低。透射率分布滤光器设置在激光退火装置的光学系统中。透射率分布滤光器控制沿着形成有非晶硅半导体薄膜的基板的扫描方向的照射光强度分布，以具有在高能量光强度侧具有等于或高于精细晶体阈值的能量分布的分布，以及用于熔化和组合仅表面层的能量部分。该透射率分布滤波器分别应用于准分子激光退火方法，相移条纹法或SLS法，使用通用线束，从而降低多晶表面上的突起的高度。

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