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1. 发明授权

US08817200B2 Liquid crystal display device comprising a TFT with a barrier metal formed of a first layer and a second layer wherein the first layer is denser than the second layer 有权
标题翻译：液晶显示装置，包括具有由第一层和第二层形成的阻挡金属的TFT，其中第一层比第二层更致密
公开(公告)号：US08817200B2
公开(公告)日：2014-08-26
申请号：US13028339
申请日：2011-02-16
申请人： Taro Asai , Jun Gotoh , Eiji Oue , Hiroaki Asuma , Katsumi Nakayashiki , Makoto Kurita
发明人： Taro Asai , Jun Gotoh , Eiji Oue , Hiroaki Asuma , Katsumi Nakayashiki , Makoto Kurita
IPC分类号： G02F1/136 , G02F1/1343
CPC分类号： G02F1/13306 , G02F1/136227 , H01L27/1222 , H01L27/124 , H01L27/3248 , H01L27/3276 , H01L29/41733 , H01L29/78666 , H01L29/78675
摘要： A contact resistance in a through-hole with a source or a drain electrode connected to a TFT is decreased, thereby improving the operation efficiency of a display device.In the through-hole, a source portion of the TFT is connected to a source electrode 8. The source electrode 8 is formed of three layers comprising a barrier metal, an Al alloy 82, and a cap metal 83. The barrier metal is divided into a lower layer 81a in contact with the semiconductor layer and an upper layer 81b in contact with the Al alloy. The lower layer 81a of the barrier metal is formed by sputtering, the lower layer 81a is heat-treated and, subsequently, an upper layer 81b of the base metal, the Al alloy 82, and the cap metal 83 are formed continuously by sputtering. Since the upper layer 81b of the barrier metal in contact with the Al alloy 82 is not oxidized, increase in the contact resistance in the through-hole can be prevented.
摘要翻译：与TFT连接的源极或漏极的通孔中的接触电阻降低，从而提高显示装置的操作效率。在通孔中，TFT的源极部分连接到源电极8.源电极8由包括阻挡金属，Al合金82和帽金属83的三层形成。阻挡金属被分割与半导体层接触的下层81a和与Al合金接触的上层81b。通过溅射形成阻挡金属的下层81a，对下层81a进行热处理，然后通过溅射连续地形成基体金属，Al合金82和盖金属83的上层81b。由于与Al合金82接触的阻挡金属的上层81b不被氧化，所以可以防止通孔中的接触电阻的增加。

2. 发明申请

US20130203313A1 Manufacturing Method of Liquid Crystal Display Device 有权
标题翻译：液晶显示装置的制造方法
公开(公告)号：US20130203313A1
公开(公告)日：2013-08-08
申请号：US13798317
申请日：2013-03-13
申请人： Jun Gotoh
发明人： Jun Gotoh
IPC分类号： G02F1/1335
CPC分类号： G02F1/1337 , G02F1/133514 , G02F1/133516 , G02F2001/133388 , G02F2001/133519
摘要： Manufacturing method of a liquid crystal display device having a TFT substrate with a display area in which pixels are arranged, a counter substrate, a sealing material formed in a periphery to bond the TFT and counter substrates, and a liquid crystal layer interposed between an orientation film on the TFT substrate and an orientation film on the counter substrate. The method includes the steps of forming a first color filter, a second color filter, or a third color filter corresponding to each of the pixels in the display area of the TFT substrate, and forming an orientation film stopper by overlapping a portion of the first color filter, the second color filter, or the third color filter, in an area between the display area and the sealing material. A profile of the orientation film formed in the TFT substrate is defined by the orientation film stopper.
摘要翻译：具有TFT基板的液晶显示装置的制造方法，具有排列像素的显示区域，对置基板，形成在外围的用于结合TFT和对置基板的密封材料以及夹在方向 TFT基板上的取向膜和对置基板上的取向膜。该方法包括以下步骤：形成与TFT基板的显示区域中的每个像素相对应的第一滤色器，第二滤色器或第三滤色器，以及通过将第一滤色器，滤色器，第二滤色器或第三滤色器，在显示区域和密封材料之间的区域中。在TFT基板上形成的取向膜的轮廓由取向膜止动件限定。

3. 发明申请

US20050253147A1 Display device and fabrication method of display device 有权
标题翻译：显示装置的显示装置和制造方法
公开(公告)号：US20050253147A1
公开(公告)日：2005-11-17
申请号：US11115224
申请日：2005-04-27
申请人： Makoto Kurita , Jun Gotoh
发明人： Makoto Kurita , Jun Gotoh
IPC分类号： G02F1/1343 , G02F1/133 , G02F1/1335 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/10 , H01L29/786
CPC分类号： G02F1/133555 , G02F1/13439 , H01L27/12 , H01L27/124
摘要： The present invention provides a display device which can prevent the deterioration of a transparent conductive film attributed to a cell reaction without pushing up a cost of a film forming device. The display device includes a first conductive layer which is formed of a transparent conductive film containing indium oxide as a main component, a conductive background layer which is formed on the first conductive layer, a second conductive layer which is formed of a film containing Al as a main component on the background layer, and a third conductive layer which is formed of the same material as the second conductive layer on the second conductive layer. On an interface between the second conductive layer and the third conductive layer, positions of grain boundaries are arranged discontinuously. Further, the background layer is a film which contains any one of Mo, Ti and Ta as a main component. Still further, the third conductive layer is used as a reflective electrode.
摘要翻译：本发明提供一种可以防止由于电池反应引起的透明导电膜的劣化而不会增加成膜装置的成本的显示装置。显示装置包括由以氧化铟为主要成分的透明导电膜形成的第一导电层，形成在第一导电层上的导电背景层，第二导电层，其由含有Al的膜形成背景层上的主要成分，和与第二导电层上的第二导电层相同的材料形成的第三导电层。在第二导电层和第三导电层之间的界面上，晶界的位置不连续地排列。此外，背景层是以Mo，Ti和Ta中的任一种为主要成分的膜。此外，第三导电层用作反射电极。

4. 发明申请

US20050249525A1 Display device and manufacturing metho of the same 有权
标题翻译：显示设备和制造方法相同
公开(公告)号：US20050249525A1
公开(公告)日：2005-11-10
申请号：US11180358
申请日：2005-07-13
申请人： Yuichi Harano , Jun Gotoh , Toshiki Kaneko , Masanao Yamamoto
发明人： Yuichi Harano , Jun Gotoh , Toshiki Kaneko , Masanao Yamamoto
IPC分类号： G02F1/1368 , G09F9/30 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L21/77 , H01L23/52 , H01L29/417 , H01L29/45 , H01L29/786 , G03G15/01
CPC分类号： H01L21/28568 , G03G15/0131 , G03G15/1685 , G03G2215/0141 , H01L21/76843 , H01L21/76849 , H01L21/76856 , H01L27/124 , H01L29/458 , H01L29/66757 , H01L29/78603
摘要： An endless belt transports a recording medium through image forming sections and transfers toner images from corresponding ones of the image forming sections onto the recording medium. The endless belt has a surface resistivity and a volume resistivity. The surface resistivity and the volume resistivity are related such that 0.3 ≦(log ρ s−log ρ v)≦1.3 where ρ s is the surface resistivity in Ω/□ measured after a voltage of substantially 500 V is applied to the endless belt for ten seconds and ρ v is the volume resistivity in Ω·cm ten after a voltage of substantially 250 V is applied to the endless belt for ten seconds.
摘要翻译：环形带通过图像形成部分传送记录介质，并将调色剂图像从对应的图像形成部分转印到记录介质上。环形带具有表面电阻率和体积电阻率。表面电阻率和体积电阻率相关，使得0.3 <=（log rho s-log rho v）<= 1.3其中rho是在基本上500V的电压之后测量的以Ω/□表示的表面电阻率施加到环形皮带10秒钟，rho v是在大约250V的电压施加到环形带上十秒钟之后的体积电阻率（Ω·cm·cm）。

5. 发明申请

US20050142701A1 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20050142701A1
公开(公告)日：2005-06-30
申请号：US10891522
申请日：2004-07-15
申请人： Hironaru Yamaguchi , Kiyoshi Ogata , Takuo Tamura , Jun Gotoh , Masakazu Saito , Kazuo Takeda
发明人： Hironaru Yamaguchi , Kiyoshi Ogata , Takuo Tamura , Jun Gotoh , Masakazu Saito , Kazuo Takeda
IPC分类号： G02F1/1368 , G02F1/136 , G02F1/1362 , G09F9/30 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01L21/00 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L21/02686 , G02F1/13454 , H01L21/02595 , H01L21/2026 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film. The grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of a next amorphous silicon film is measured. A value of energy density of laser beam irradiation is calculated on the basis of the average film thickness of the next amorphous silicon film and the average film thickness of the previous amorphous silicon film. The value of energy density is fed back to a laser beam irradiation system. As described above, the energy density of laser beam irradiation to be applied on a silicon film formed on a substrate is controlled in accordance with the film thickness of the silicon film whenever the film thickness of the silicon film is measured. Accordingly, polysilicon uniform and large in grain size can be formed on the whole surface of a large-size substrate. As a result, polysilicon TFTs can be formed in a large area.
摘要翻译：测量在基板上形成的非晶硅膜的平均膜厚。然后，用激光束照射非晶硅膜以形成多晶硅膜。测量多晶硅膜的晶粒尺寸分布。基于在多晶硅膜的两点A和B测量的晶粒尺寸值来计算激光束照射的能量密度的最佳值。然后，测定下一非晶硅膜的平均膜厚。基于下一非晶硅膜的平均膜厚和先前的非晶硅膜的平均膜厚计算激光束照射的能量密度值。能量密度的值被反馈到激光束照射系统。如上所述，每当测量硅膜的膜厚时，根据硅膜的膜厚度来控制施加在形成在基板上的硅膜上的激光束照射的能量密度。因此，可以在大尺寸基板的整个表面上形成均匀且粒径大的多晶硅。结果，可以在大面积上形成多晶硅TFT。

6. 发明授权

US08233119B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US08233119B2
公开(公告)日：2012-07-31
申请号：US12790063
申请日：2010-05-28
申请人： Jun Gotoh
发明人： Jun Gotoh
IPC分类号： G02F1/1337 , G02F1/1339
CPC分类号： G02F1/1337 , G02F1/133514 , G02F1/133516 , G02F2001/133388 , G02F2001/133519
摘要： There is provided a liquid crystal display device having color filters on a side of a TFT substrate, in which an orientation film is formed by inkjet printing. The formation of an orientation film by inkjet printing is more advantageous than the conventional flexographic printing in terms of the production cost. It is necessary, however, to reduce the viscosity of the orientation film to be applied by inkjet printing. For this reason, first and second orientation film stoppers are formed between a display area and a sealing portion in a TFT substrate, to prevent the orientation film from flowing to an end of the TFT substrate. The orientation film stoppers are formed by the overlapping of color filters. A profile of the orientation film is defined by the first orientation film stopper. The second orientation film stopper is formed to ensure that the orientation film does not flow to the outside.
摘要翻译：在TFT基板的一侧设置有通过喷墨印刷形成取向膜的滤色器的液晶显示装置。通过喷墨印刷形成取向膜在生产成本方面比常规柔版印刷更有利。然而，有必要降低通过喷墨印刷施加的取向膜的粘度。为此，在TFT基板的显示区域和密封部分之间形成第一和第二取向膜止动件，以防止取向膜流向TFT基板的一端。取向膜止动器由滤色器的重叠形成。取向膜的轮廓由第一取向膜止动件限定。形成第二取向膜止动件以确保取向膜不流到外部。

7. 发明申请

US20110199551A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20110199551A1
公开(公告)日：2011-08-18
申请号：US13028339
申请日：2011-02-16
申请人： Taro Asai , Jun Gotoh , Eiji Oue , Hiroaki Asuma , Katsumi Nakayashiki , Makoto Kurita
发明人： Taro Asai , Jun Gotoh , Eiji Oue , Hiroaki Asuma , Katsumi Nakayashiki , Makoto Kurita
IPC分类号： G02F1/136 , H01L33/08 , H01J1/62
CPC分类号： G02F1/13306 , G02F1/136227 , H01L27/1222 , H01L27/124 , H01L27/3248 , H01L27/3276 , H01L29/41733 , H01L29/78666 , H01L29/78675
摘要： A contact resistance in a through-hole with a source or a drain electrode connected to a TFT is decreased, thereby improving the operation efficiency of a display device.In the through-hole, a source portion of the TFT is connected to a source electrode 8. The source electrode 8 is formed of three layers comprising a barrier metal, an Al alloy 82, and a cap metal 83. The barrier metal is divided into a lower layer 81a in contact with the semiconductor layer and an upper layer 81b in contact with the Al alloy. The lower layer 81a of the barrier metal is formed by sputtering, the lower layer 81a is heat-treated and, subsequently, an upper layer 81b of the base metal, the Al alloy 82, and the cap metal 83 are formed continuously by sputtering. Since the upper layer 81b of the barrier metal in contact with the Al alloy 82 is not oxidized, increase in the contact resistance in the through-hole can be prevented.
摘要翻译：与TFT连接的源极或漏极的通孔中的接触电阻降低，从而提高显示装置的操作效率。在通孔中，TFT的源极部分连接到源电极8.源电极8由包括阻挡金属，Al合金82和帽金属83的三层形成。阻挡金属被分割与半导体层接触的下层81a和与Al合金接触的上层81b。通过溅射形成阻挡金属的下层81a，对下层81a进行热处理，然后通过溅射连续地形成基体金属，Al合金82和盖金属83的上层81b。由于与Al合金82接触的阻挡金属的上层81b不被氧化，所以可以防止通孔中的接触电阻的增加。

8. 发明授权

US07838884B2 Display device and fabrication method of display device 有权
标题翻译：显示装置的显示装置和制造方法
公开(公告)号：US07838884B2
公开(公告)日：2010-11-23
申请号：US11115224
申请日：2005-04-27
申请人： Makoto Kurita , Jun Gotoh
发明人： Makoto Kurita , Jun Gotoh
IPC分类号： H01L29/10
CPC分类号： G02F1/133555 , G02F1/13439 , H01L27/12 , H01L27/124
摘要： The present invention provides a display device which can prevent the deterioration of a transparent conductive film attributed to a cell reaction without pushing up a cost of a film forming device. The display device includes a first conductive layer which is formed of a transparent conductive film containing indium oxide as a main component, a conductive background layer which is formed on the first conductive layer, a second conductive layer which is formed of a film containing Al as a main component on the background layer, and a third conductive layer which is formed of the same material as the second conductive layer on the second conductive layer. On an interface between the second conductive layer and the third conductive layer, positions of grain boundaries are arranged discontinuously. Further, the background layer is a film which contains any one of Mo, Ti and Ta as a main component. Still further, the third conductive layer is used as a reflective electrode.
摘要翻译：本发明提供一种可以防止由于电池反应引起的透明导电膜的劣化而不会增加成膜装置的成本的显示装置。显示装置包括由以氧化铟为主要成分的透明导电膜形成的第一导电层，形成在第一导电层上的导电背景层，第二导电层，其由含有Al的膜形成背景层上的主要成分，和与第二导电层上的第二导电层相同的材料形成的第三导电层。在第二导电层和第三导电层之间的界面上，晶界的位置不连续地排列。此外，背景层是以Mo，Ti和Ta中的任一种为主要成分的膜。此外，第三导电层用作反射电极。

9. 发明申请

US20060254497A1 Semiconductor thin film decomposing method, decomposed semiconductor thin film, decomposed semiconductor thin film evaluation method, thin film transistor made of decomposed semiconductor thin film, and image display device having circuit constituted of thin film transistors 审中-公开
公开(公告)号：US20060254497A1
公开(公告)日：2006-11-16
申请号：US11449664
申请日：2006-06-09
申请人： Kazuo Takeda , Takeshi Sato , Masakazu Saito , Jun Gotoh
发明人： Kazuo Takeda , Takeshi Sato , Masakazu Saito , Jun Gotoh
IPC分类号： C30B5/00
CPC分类号： H01L21/02686 , B23K26/066 , B23K26/0738 , H01L21/02678 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675
摘要： A surface roughness of a polycrystalline semiconductor film to be formed by a laser annealing method is reduced. A transmittance distribution filter is disposed at the optical system of a laser annealing apparatus. The transmittance distribution filter controls an irradiation light intensity distribution along a scanning direction of a substrate formed with an amorphous silicon semiconductor thin film to have a distribution having an energy part equal to or higher than a fine crystal threshold on a high energy light intensity side and an energy part for melting and combining only a surface layer. This transmittance distribution filter is applied to an excimer laser annealing method, a phase shift stripe method or an SLS method respectively using a general line beam to thereby reduce the height of protrusions on a polycrystalline surface.

10. 发明申请

US20050250273A1 Display device and manufacturing method of the same 有权
公开(公告)号：US20050250273A1
公开(公告)日：2005-11-10
申请号：US11180658
申请日：2005-07-14
申请人： Yuichi Harano , Jun Gotoh , Toshiki Kaneko , Masanao Yamamoto
发明人： Yuichi Harano , Jun Gotoh , Toshiki Kaneko , Masanao Yamamoto
IPC分类号： G02F1/1368 , G09F9/30 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L21/77 , H01L23/52 , H01L29/417 , H01L29/45 , H01L29/786
CPC分类号： H01L21/28568 , G03G15/0131 , G03G15/1685 , G03G2215/0141 , H01L21/76843 , H01L21/76849 , H01L21/76856 , H01L27/124 , H01L29/458 , H01L29/66757 , H01L29/78603
摘要： The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.

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