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21. 发明申请

US20160300929A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20160300929A1
公开(公告)日：2016-10-13
申请号：US15062742
申请日：2016-03-07
申请人： JINBUM KIM , Jaeyoung Park , Donghun Lee , Jeongho Yoo , Jieon Yoon , Kwan Heum Lee , Choeun Lee , Bonyoung Koo
发明人： JINBUM KIM , Jaeyoung Park , Donghun Lee , Jeongho Yoo , Jieon Yoon , Kwan Heum Lee , Choeun Lee , Bonyoung Koo
IPC分类号： H01L29/66 , H01L29/12 , H01L21/30 , H01L29/423 , H01L29/40 , H01L29/04 , H01L29/417
CPC分类号： H01L29/66636 , H01L21/3003 , H01L29/045 , H01L29/0847 , H01L29/12 , H01L29/165 , H01L29/401 , H01L29/41766 , H01L29/42356 , H01L29/66545 , H01L29/78
摘要： A method of fabricating a semiconductor device is provided as follows. A source/drain pattern is formed on a substrate. The source/drain pattern contains silicon atoms and germanium atoms. At least one germanium atom is removed from the germanium atoms of the source/drain pattern.
摘要翻译：如下提供制造半导体器件的方法。在衬底上形成源极/漏极图案。源/漏模式包含硅原子和锗原子。从源极/漏极图案的锗原子中去除至少一个锗原子。

22. 发明授权

US09466721B1 Semiconductor device having stressor and method of fabricating the same 有权
标题翻译：具有应力源的半导体器件及其制造方法
公开(公告)号：US09466721B1
公开(公告)日：2016-10-11
申请号：US14978155
申请日：2015-12-22
申请人： Jinbum Kim , Kwanheum Lee , Hyunjae Kang , Bonyoung Koo , Seokhoon Kim , Kanghun Moon , Jaeyoung Park , Byeongchan Lee , Sunyoung Lee , Choeun Lee , Hanki Lee , Sujin Jung , Yang Xu
发明人： Jinbum Kim , Kwanheum Lee , Hyunjae Kang , Bonyoung Koo , Seokhoon Kim , Kanghun Moon , Jaeyoung Park , Byeongchan Lee , Sunyoung Lee , Choeun Lee , Hanki Lee , Sujin Jung , Yang Xu
IPC分类号： H01L27/088 , H01L29/78 , H01L29/417 , H01L29/06 , H01L29/423 , H01L29/10
CPC分类号： H01L29/785 , H01L29/0649 , H01L29/0657 , H01L29/1054 , H01L29/42364 , H01L29/66795 , H01L29/7848
摘要： A semiconductor device may include a fin active region including a lower fin active region surrounded by a device isolation layer and an upper fin active region protruding from a top surface of the device isolation layer, a gate pattern disposed on top and side surfaces of the upper fin active region, and a source/drain region formed in the fin active region located at a side of the gate pattern. The gate pattern extends onto the device isolation region. The source/drain region includes a trench and epitaxial layers that fill the trench. Sidewalls of the trench include first sidewalls and second sidewalls that connect the first sidewalls to a bottom surface of the trench. The bottom surface of the trench is located at a lower level than the top surface of the device isolation layer beneath the gate pattern, and the second sidewalls of the trench have inclined {111} planes.
摘要翻译：半导体器件可以包括鳍状物活性区域，其包括被器件隔离层包围的下部翅片有源区域和从器件隔离层的顶表面突出的上部翅片有源区域，设置在上部的顶部和侧面上的栅极图案鳍状物活性区域和形成在位于栅极图案侧的鳍状物活性区域中的源极/漏极区域。栅极图案延伸到器件隔离区域上。源/漏区包括填充沟槽的沟槽和外延层。沟槽的侧壁包括将第一侧壁连接到沟槽的底表面的第一侧壁和第二侧壁。沟槽的底表面位于比栅极图案下方的器件隔离层的顶表面更低的水平处，并且沟槽的第二侧壁具有倾斜的{111}平面。

23. 发明授权

US08376537B2 Composition of rotogravure hotmelt ink containing polypropylene carbonate 有权
标题翻译：含有聚碳酸丙烯酯的轮转凹版热熔油墨的组成
公开(公告)号：US08376537B2
公开(公告)日：2013-02-19
申请号：US13213470
申请日：2011-08-19
申请人： SeungGweon Hong , JaeYoung Park , HyeLim Kim , Kwang Jin Chung , Myung Ahn Ok
发明人： SeungGweon Hong , JaeYoung Park , HyeLim Kim , Kwang Jin Chung , Myung Ahn Ok
IPC分类号： C09D11/10
CPC分类号： C09D11/03 , C09D11/10 , C09D11/34
摘要： Provided is an eco-friendly rotogravure hot melt ink composition. More specifically, the present invention provides the rotogravure hot melt ink composition meeting requirements of a carbon footprint system by using, as a vehicle, poly propylene carbonate prepared using carbon dioxide as a raw material. The rotogravure hot melt ink prepared by the composition of the present invention has a higher printing density and more easily performs printing at low temperature than a poly vinyl acetate based hot melt ink according to the related art.
摘要翻译：提供了一种环保型凹版印刷热熔油墨组合物。更具体地说，本发明通过使用以二氧化碳为原料制备的聚碳酸丙烯酯作为载体，提供了满足碳足迹系统要求的轮转凹版热熔墨组合物。通过本发明的组合物制备的轮转凹版热熔油墨具有更高的印刷密度，并且在相对于现有技术的聚乙酸乙烯酯基热熔性油墨的低温下更容易进行印刷。

24. 发明申请

US20110152710A1 ADAPTIVE BRAIN-COMPUTER INTERFACE DEVICE 审中-公开
标题翻译：自适应脑电脑界面装置
公开(公告)号：US20110152710A1
公开(公告)日：2011-06-23
申请号：US12693873
申请日：2010-01-26
申请人： Kee-Eung KIM , Jinhyung Kim , Jaeyoung Park
发明人： Kee-Eung KIM , Jinhyung Kim , Jaeyoung Park
IPC分类号： A61B5/0478
CPC分类号： A61B5/0484 , A61B5/0482 , A61F4/00 , G06F3/015
摘要： Disclosed herein is an adaptive brain-computer interface device. The brain-computer interface device includes a stimulus generation unit, a signal collection unit, a preprocessing unit, an analysis unit, and a stimuli sequence determination unit. The stimulus generation unit generates stimuli and applies the stimuli to a user. The signal collection unit records the user's Electroencephalogram (EEG) signals generated by the stimuli. The preprocessing unit extracts the feature of P300 on the basis of one of the stimulus from the EEG signals. The analysis unit determines whether P300 is present in the signal extracted by the preprocessing unit. The stimuli sequence determination unit determines the sequence of the stimuli of the stimulus generation unit by inferring a current state from the observations of the analysis unit and selecting an optimum stimulus for the current state.
摘要翻译：这里公开了一种自适应脑机接口装置。脑机接口装置包括刺激生成单元，信号采集单元，预处理单元，分析单元和刺激序列确定单元。刺激生成单元产生刺激并将刺激应用于用户。信号采集单元记录由刺激产生的用户脑电图（EEG）信号。预处理单元根据EEG信号的刺激之一提取P300的特征。分析单元确定P300是否存在于由预处理单元提取的信号中。刺激序列确定单元通过从分析单元的观察结果推断当前状态并选择针对当前状态的最佳刺激来确定刺激生成单元的刺激序列。

25. 发明申请

US20100109983A1 PLASMA DISPLAY PANEL AND PLASMA DISPLAY APPARATUS 审中-公开
标题翻译：等离子显示面板和等离子显示设备
公开(公告)号：US20100109983A1
公开(公告)日：2010-05-06
申请号：US12510516
申请日：2009-07-28
申请人： Kirack PARK , Seonghwan Ryu , Jaeyoung Park
发明人： Kirack PARK , Seonghwan Ryu , Jaeyoung Park
IPC分类号： G09G3/28
CPC分类号： H01J11/12 , G09G3/2022 , G09G3/2927 , G09G2310/066 , H01J11/24 , H01J11/32 , H01J11/36 , H01J11/42 , H01J11/50 , H01J2211/245 , H01J2211/323 , H01J2211/361
摘要： A plasma display panel and a plasma display apparatus including the same are provided. The plasma display panel includes a front substrate on which a scan electrode and a sustain electrode are positioned substantially parallel to each other, a rear substrate on which an address electrode is positioned to cross the scan electrode and the sustain electrode, and a discharge gas filled in a space between the front substrate and the rear substrate. The scan electrode and the sustain electrode are ITO-less electrodes. The discharge gas contains a nitrogen gas (N2).
摘要翻译：提供了一种等离子体显示面板和包括该等离子体显示面板的等离子体显示装置。等离子体显示面板包括前面基板，扫描电极和维持电极基本上彼此平行地布置在其上，其中寻址电极定位成与扫描电极和维持电极交叉的后基板和填充有放电气体的后基板在前基板和后基板之间的空间中。扫描电极和维持电极是不含ITO的电极。放电气体含有氮气（N 2）。

26. 发明授权

US06909237B1 Production of stable, non-thermal atmospheric pressure rf capacitive plasmas using gases other than helium or neon 有权
标题翻译：使用氦气或氖气以外的气体生产稳定的非热大气压rf电容等离子体
公开(公告)号：US06909237B1
公开(公告)日：2005-06-21
申请号：US10205786
申请日：2002-07-25
申请人： Jaeyoung Park , Ivars Henins
发明人： Jaeyoung Park , Ivars Henins
IPC分类号： H05H1/24 , H01J7/24
CPC分类号： H05H1/2406 , H05H2001/2412 , H05H2240/10
摘要： The present invention enables the production of stable, steady state, non-thermal atmospheric pressure rf capacitive α-mode plasmas using gases other than helium and neon. In particular, the current invention generates and maintains stable, steady-state, non-thermal atmospheric pressure rf α-mode plasmas using pure argon or argon with reactive gas mixtures, pure oxygen or air. By replacing rare and expensive helium with more readily available gases, this invention makes it more economical to use atmospheric pressure rf α-mode plasmas for various materials processing applications.
摘要翻译：本发明能够使用除氦和氖之外的气体来生产稳定，稳态，非热大气压rf电容式α模式等离子体。特别地，本发明使用具有反应气体混合物，纯氧气或空气的纯氩或氩产生并维持稳定的，稳态的，非热的大气压rfα模式等离子体。通过用更容易获得的气体代替稀有和昂贵的氦气，本发明使得使用大气压rfα模式等离子体用于各种材料处理应用是更经济的。

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