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1. 发明申请

US20100109983A1 PLASMA DISPLAY PANEL AND PLASMA DISPLAY APPARATUS 审中-公开
标题翻译：等离子显示面板和等离子显示设备
公开(公告)号：US20100109983A1
公开(公告)日：2010-05-06
申请号：US12510516
申请日：2009-07-28
申请人： Kirack PARK , Seonghwan Ryu , Jaeyoung Park
发明人： Kirack PARK , Seonghwan Ryu , Jaeyoung Park
IPC分类号： G09G3/28
CPC分类号： H01J11/12 , G09G3/2022 , G09G3/2927 , G09G2310/066 , H01J11/24 , H01J11/32 , H01J11/36 , H01J11/42 , H01J11/50 , H01J2211/245 , H01J2211/323 , H01J2211/361
摘要： A plasma display panel and a plasma display apparatus including the same are provided. The plasma display panel includes a front substrate on which a scan electrode and a sustain electrode are positioned substantially parallel to each other, a rear substrate on which an address electrode is positioned to cross the scan electrode and the sustain electrode, and a discharge gas filled in a space between the front substrate and the rear substrate. The scan electrode and the sustain electrode are ITO-less electrodes. The discharge gas contains a nitrogen gas (N2).
摘要翻译：提供了一种等离子体显示面板和包括该等离子体显示面板的等离子体显示装置。等离子体显示面板包括前面基板，扫描电极和维持电极基本上彼此平行地布置在其上，其中寻址电极定位成与扫描电极和维持电极交叉的后基板和填充有放电气体的后基板在前基板和后基板之间的空间中。扫描电极和维持电极是不含ITO的电极。放电气体含有氮气（N 2）。

2. 发明申请

US20100164358A1 FILTER FOR PLASMA DISPLAY AND FABRICATING METHOD THEREOF 审中-公开
标题翻译：等离子显示过滤器及其制作方法
公开(公告)号：US20100164358A1
公开(公告)日：2010-07-01
申请号：US12641544
申请日：2009-12-18
申请人： Jinyoung Lee , Sungyong Lee , Jaeyoung Park , Jaehyung Kim , Dohyukl Kwon
发明人： Jinyoung Lee , Sungyong Lee , Jaeyoung Park , Jaehyung Kim , Dohyukl Kwon
IPC分类号： H01J1/52 , B05D5/12 , H05K9/00
CPC分类号： H05K9/0096 , H01J11/10 , H01J11/44 , H01J2211/444 , H01J2211/446
摘要： A filter for a plasma display includes an electromagnetic interference shielding mesh formed on a substrate to shield electromagnetic waves and a hard coating layer made of inorganic material formed on the electromagnetic interference shielding mesh. The filter is fabricated so as to provide a reduced thickness of a plasma display, to prevent cracks from being generated on surfaces of the mesh and to reduce manufacturing costs.
摘要翻译：用于等离子体显示器的过滤器包括形成在基板上以屏蔽电磁波的电磁干扰屏蔽网以及形成在电磁干扰屏蔽网上的由无机材料制成的硬涂层。制造过滤器以提供等离子体显示器的减小的厚度，以防止在网的表面上产生裂纹并降低制造成本。

3. 发明申请

US20050274122A1 Spinning cold plasma apparatus and methods relating thereto 有权
标题翻译：旋转冷等离子体装置及其相关方法
公开(公告)号：US20050274122A1
公开(公告)日：2005-12-15
申请号：US11064300
申请日：2005-02-23
申请人： Choongseock Chang , Jemo Kang , Jaeyoung Park
发明人： Choongseock Chang , Jemo Kang , Jaeyoung Park
IPC分类号： A61L2/14 , F25B9/02 , F25B9/04
CPC分类号： F25B9/04 , A61L2/14 , H05H1/46 , H05H2001/3468 , H05H2240/20
摘要： Disclosed herein is an apparatus for generating a spinning cold plasma. A preferred embodiment of the spinning cold plasma apparatus is portable and includes a vortex tube having an inner wall to form a vortex reaction chamber. The vortex tube preferably has a cold gas outlet formed at a first end of the vortex tube and a hot gas outlet formed at a second end of the vortex tube. The vortex tube preferably has a plurality of gas inlet openings formed therein for directing pressurized gas tangentially to the inner wall into the vortex reaction chamber. A preferred embodiment of the portable spinning cold plasma apparatus also includes a valve positioned at least partially within the cold gas outlet and a valve positioned at least partially within the hot gas outlet. The portable device preferably also includes an ionizing device, such as an RF source or microwave source, for transmitting electromagnetic energy into the vortex reaction chamber to ionize pressurized gas therein. Additional apparatus and methods are also disclosed herein.
摘要翻译：本文公开了一种用于产生旋转冷等离子体的装置。旋转冷等离子体装置的优选实施例是便携式的，并且包括具有内壁以形成涡流反应室的涡流管。涡流管优选地具有形成在涡流管的第一端处的冷气出口和形成在涡流管的第二端处的热气体出口。涡流管优选地具有形成在其中的多个气体入口，用于将加压气体切向地引导到内壁进入涡流反应室。便携式旋转冷等离子体装置的优选实施例还包括至少部分地位于冷气出口内的阀和至少部分位于热气出口内的阀。便携式设备优选地还包括用于将电磁能量传输到涡流反应室中以将加压气体电离其中的电离装置，例如RF源或微波源。本文还公开了另外的装置和方法。

4. 发明授权

US08598253B2 Polypropylene carbonate paint composition 有权
标题翻译：聚丙烯碳酸酯漆组成
公开(公告)号：US08598253B2
公开(公告)日：2013-12-03
申请号：US13325774
申请日：2011-12-14
申请人： Seunggweon Hong , Jaeyoung Park , Hyelim Kim , Kwangjin Chung , Myungahn Ok
发明人： Seunggweon Hong , Jaeyoung Park , Hyelim Kim , Kwangjin Chung , Myungahn Ok
IPC分类号： C08J9/32
CPC分类号： C09D169/00 , C08G18/44 , C08K3/34 , C09D175/06
摘要： Provided is a polypropylene carbonate (hereinafter, PPC) paint composition, and more particularly, a pre-coated metal (PCM) paint composition for coil coating, which is mainly applied to cases for home appliances requiring high hardness, such as cases of a refrigerator. The composition can be used to provide a PCM paint, which has very low smoke density at the time of burning and emits remarkably low amounts of combustion gas and poisonous gas due to combustion at the time of firing, as compared with the existing laminate steel plate and a high-gloss film. In addition, the composition exhibits excellent adhesion to metal materials and excellent durability so that it can be usefully used for a PCM print steel plate applied to home appliances.
摘要翻译：本发明提供一种聚丙烯碳酸酯（以下称为PPC）涂料组合物，更具体地说，涉及一种用于线圈涂布的预涂金属（PCM）涂料组合物，其主要应用于需要高硬度的家用电器的情况下，例如冰箱。该组合物可用于提供在燃烧时具有非常低的烟雾密度的PCM涂料，与现有的层压钢板相比，由于燃烧时的燃烧气体和有毒气体的排出量显着降低和高光泽膜。此外，该组合物对金属材料表现出优异的粘附性和优异的耐久性，因此其可用于应用于家用电器的PCM印刷钢板。

5. 发明申请

US20100202580A1 METHOD AND APPARATUS FOR NEUTRON GENERATION USING LIQUID TARGETS 审中-公开
标题翻译：使用液体目标中和生成的方法和装置
公开(公告)号：US20100202580A1
公开(公告)日：2010-08-12
申请号：US12695677
申请日：2010-01-28
申请人： Jaeyoung Park , Glen A. Wurden , Richard A. Nebel
发明人： Jaeyoung Park , Glen A. Wurden , Richard A. Nebel
IPC分类号： G21B1/17
CPC分类号： H05H3/06 , H05H6/00
摘要： An apparatus and method for a beam target fusion neutron generator comprising a closed cycle flow generator having a continuous liquid phase flowing stream liquid target containing hydrogen isotopes where said stream has a continuously refreshed exposed surface and where said liquid target is high vacuum compatible at cryogenic temperatures; and an ion beam generator adapted to produce an ion beam and focused to direct said beam to bombard said flowing stream liquid target. The flowing stream liquid target can be a thin film curtain and said closed cycle flow generator can be a cryogenic liquid handling system having a heat exchanger adapted to maintain said liquid target at cryogenic temperatures and having a collection reservoir position to capture use target material for recycling.
摘要翻译：一种用于束目标聚变中子发生器的装置和方法，包括具有包含氢同位素的连续液相流动液体靶的封闭循环流发生器，其中所述流具有连续刷新的暴露表面，并且其中所述液体靶在低温下具有高真空兼容性 ; 以及离子束发生器，其适于产生离子束并被聚焦以引导所述光束轰击所述流动液体物体。流动液体液体靶可以是薄膜帘幕，并且所述闭合循环流发生器可以是具有热交换器的低温液体处理系统，该热交换器适于将所述液体靶保持在低温温度并且具有收集储存器位置以捕获用于回收的目标材料。

6. 发明授权

US07025856B2 Processing materials inside an atmospheric-pressure radiofrequency nonthermal plasma discharge 有权
公开(公告)号：US07025856B2
公开(公告)日：2006-04-11
申请号：US09776086
申请日：2001-02-02
申请人： Gary S. Selwyn , Ivars Henins , Jaeyoung Park , Hans W. Herrmann
发明人： Gary S. Selwyn , Ivars Henins , Jaeyoung Park , Hans W. Herrmann
IPC分类号： C23F1/00 , H01L21/306 , C23C16/509
CPC分类号： H01L21/67069 , B08B7/0035 , C23G5/00 , H01J37/32082 , H01J37/32733 , H01L21/31
摘要： Apparatus for the processing of materials involving placing a material either placed between an radio-frequency electrode and a ground electrode, or which is itself one of the electrodes. This is done in atmospheric pressure conditions. The apparatus effectively etches or cleans substrates, such as silicon wafers, or provides cleaning of spools and drums, and uses a gas containing an inert gas and a chemically reactive gas.

7. 发明申请

US20140263181A1 METHOD AND APPARATUS FOR GENERATING HIGHLY REPETITIVE PULSED PLASMAS 审中-公开
标题翻译：用于产生高度重复脉冲等离子体的方法和装置
公开(公告)号：US20140263181A1
公开(公告)日：2014-09-18
申请号：US13860393
申请日：2013-04-10
申请人： Jaeyoung Park
发明人： Jaeyoung Park
IPC分类号： H05H1/46 , C23F1/08 , C23C16/509
CPC分类号： H05H1/46 , C23C16/0245 , C23C16/452 , C23C16/453 , C23C16/45557 , C23C16/505 , C23C16/515 , H01J37/32082 , H01J37/321 , H01J37/3211 , H01J37/32146 , H01L21/3065 , H05H2001/4667 , H05H2001/4682
摘要： A pulsed radio frequency inductive plasma source and method are provided. The source may generate plasma at gas pressures from 1 torr to 2000 torr. By utilizing high power RF generation from fast solid state switches such as Insulated-Gate Bipolar Transistor (IGBT) combined with the resonance circuit, large inductive voltages can be applied to RF antennas to allow rapid gas breakdown from 1-100 μs. After initial breakdown, the same set of switches or an additional rf pulsed power systems are utilized to deliver large amount of rf power, between 10 kW to 10 MW, to the plasmas during the pulse duration of 10 μs-10 ms. In addition, several methods and apparatus for controlling the pulse power delivery, timing gas and materials supply, constructing reactor and substrate structure, and operating pumping system and plasma activated reactive materials delivery system will be disclosed. When combined with the pulsed plasma generation, these apparatuses and the methods can greatly improve the applicability and the efficacy of the industrial plasma processing.
摘要翻译：提供脉冲射频感应等离子体源和方法。源可以在1托至2000托的气体压力下产生等离子体。通过利用与谐振电路相结合的诸如绝缘栅双极晶体管（IGBT）的快速固态开关的高功率射频产生，可以对RF天线施加大的感应电压，以允许从1-100μs的快速气体击穿。在初始故障之后，在10μs-10 ms的脉冲持续时间期间，使用相同组的开关或附加的rf脉冲功率系统在10 kW至10 MW之间向等离子体提供大量的功率。此外，将公开用于控制脉冲功率输送，正时气体和材料供应，构建反应器和基底结构以及操作泵送系统和等离子体激活反应物质输送系统的几种方法和装置。当与脉冲等离子体产生相结合时，这些装置和方法可以大大提高工业等离子体处理的适用性和有效性。

8. 发明申请

US20160300929A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20160300929A1
公开(公告)日：2016-10-13
申请号：US15062742
申请日：2016-03-07
申请人： JINBUM KIM , Jaeyoung Park , Donghun Lee , Jeongho Yoo , Jieon Yoon , Kwan Heum Lee , Choeun Lee , Bonyoung Koo
发明人： JINBUM KIM , Jaeyoung Park , Donghun Lee , Jeongho Yoo , Jieon Yoon , Kwan Heum Lee , Choeun Lee , Bonyoung Koo
IPC分类号： H01L29/66 , H01L29/12 , H01L21/30 , H01L29/423 , H01L29/40 , H01L29/04 , H01L29/417
CPC分类号： H01L29/66636 , H01L21/3003 , H01L29/045 , H01L29/0847 , H01L29/12 , H01L29/165 , H01L29/401 , H01L29/41766 , H01L29/42356 , H01L29/66545 , H01L29/78
摘要： A method of fabricating a semiconductor device is provided as follows. A source/drain pattern is formed on a substrate. The source/drain pattern contains silicon atoms and germanium atoms. At least one germanium atom is removed from the germanium atoms of the source/drain pattern.
摘要翻译：如下提供制造半导体器件的方法。在衬底上形成源极/漏极图案。源/漏模式包含硅原子和锗原子。从源极/漏极图案的锗原子中去除至少一个锗原子。

9. 发明授权

US09466721B1 Semiconductor device having stressor and method of fabricating the same 有权
标题翻译：具有应力源的半导体器件及其制造方法
公开(公告)号：US09466721B1
公开(公告)日：2016-10-11
申请号：US14978155
申请日：2015-12-22
申请人： Jinbum Kim , Kwanheum Lee , Hyunjae Kang , Bonyoung Koo , Seokhoon Kim , Kanghun Moon , Jaeyoung Park , Byeongchan Lee , Sunyoung Lee , Choeun Lee , Hanki Lee , Sujin Jung , Yang Xu
发明人： Jinbum Kim , Kwanheum Lee , Hyunjae Kang , Bonyoung Koo , Seokhoon Kim , Kanghun Moon , Jaeyoung Park , Byeongchan Lee , Sunyoung Lee , Choeun Lee , Hanki Lee , Sujin Jung , Yang Xu
IPC分类号： H01L27/088 , H01L29/78 , H01L29/417 , H01L29/06 , H01L29/423 , H01L29/10
CPC分类号： H01L29/785 , H01L29/0649 , H01L29/0657 , H01L29/1054 , H01L29/42364 , H01L29/66795 , H01L29/7848
摘要： A semiconductor device may include a fin active region including a lower fin active region surrounded by a device isolation layer and an upper fin active region protruding from a top surface of the device isolation layer, a gate pattern disposed on top and side surfaces of the upper fin active region, and a source/drain region formed in the fin active region located at a side of the gate pattern. The gate pattern extends onto the device isolation region. The source/drain region includes a trench and epitaxial layers that fill the trench. Sidewalls of the trench include first sidewalls and second sidewalls that connect the first sidewalls to a bottom surface of the trench. The bottom surface of the trench is located at a lower level than the top surface of the device isolation layer beneath the gate pattern, and the second sidewalls of the trench have inclined {111} planes.
摘要翻译：半导体器件可以包括鳍状物活性区域，其包括被器件隔离层包围的下部翅片有源区域和从器件隔离层的顶表面突出的上部翅片有源区域，设置在上部的顶部和侧面上的栅极图案鳍状物活性区域和形成在位于栅极图案侧的鳍状物活性区域中的源极/漏极区域。栅极图案延伸到器件隔离区域上。源/漏区包括填充沟槽的沟槽和外延层。沟槽的侧壁包括将第一侧壁连接到沟槽的底表面的第一侧壁和第二侧壁。沟槽的底表面位于比栅极图案下方的器件隔离层的顶表面更低的水平处，并且沟槽的第二侧壁具有倾斜的{111}平面。

10. 发明申请

US20110152710A1 ADAPTIVE BRAIN-COMPUTER INTERFACE DEVICE 审中-公开
标题翻译：自适应脑电脑界面装置
公开(公告)号：US20110152710A1
公开(公告)日：2011-06-23
申请号：US12693873
申请日：2010-01-26
申请人： Kee-Eung KIM , Jinhyung Kim , Jaeyoung Park
发明人： Kee-Eung KIM , Jinhyung Kim , Jaeyoung Park
IPC分类号： A61B5/0478
CPC分类号： A61B5/0484 , A61B5/0482 , A61F4/00 , G06F3/015
摘要： Disclosed herein is an adaptive brain-computer interface device. The brain-computer interface device includes a stimulus generation unit, a signal collection unit, a preprocessing unit, an analysis unit, and a stimuli sequence determination unit. The stimulus generation unit generates stimuli and applies the stimuli to a user. The signal collection unit records the user's Electroencephalogram (EEG) signals generated by the stimuli. The preprocessing unit extracts the feature of P300 on the basis of one of the stimulus from the EEG signals. The analysis unit determines whether P300 is present in the signal extracted by the preprocessing unit. The stimuli sequence determination unit determines the sequence of the stimuli of the stimulus generation unit by inferring a current state from the observations of the analysis unit and selecting an optimum stimulus for the current state.
摘要翻译：这里公开了一种自适应脑机接口装置。脑机接口装置包括刺激生成单元，信号采集单元，预处理单元，分析单元和刺激序列确定单元。刺激生成单元产生刺激并将刺激应用于用户。信号采集单元记录由刺激产生的用户脑电图（EEG）信号。预处理单元根据EEG信号的刺激之一提取P300的特征。分析单元确定P300是否存在于由预处理单元提取的信号中。刺激序列确定单元通过从分析单元的观察结果推断当前状态并选择针对当前状态的最佳刺激来确定刺激生成单元的刺激序列。

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