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21. 发明申请

US20050059222A1 Method of forming polycrystalline semiconductor layer and thin film transistor using the same 有权
标题翻译：使用其形成多晶半导体层和薄膜晶体管的方法
公开(公告)号：US20050059222A1
公开(公告)日：2005-03-17
申请号：US10865930
申请日：2004-06-14
申请人： JaeSung You
发明人： JaeSung You
IPC分类号： G02F1/13 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L21/76 , H01L29/76
CPC分类号： H01L21/0268 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675
摘要： A method of forming a polycrystalline semiconductor layer includes forming a semiconductor layer of amorphous silicon on a substrate, forming a plurality of spot seeds in the semiconductor layer by irradiating a first laser beam through a crystallization mask, each of the plurality of spot seeds being equally spaced from one another and each having equal area, and forming a polycrystalline silicon layer along an entire surface of the substrate by irradiating a second laser beam onto the semiconductor layer.
摘要翻译：形成多晶半导体层的方法包括在衬底上形成非晶硅半导体层，通过将第一激光束照射通过结晶掩模，在半导体层中形成多个斑点种子，多个斑点种子均等彼此间隔开并且各自具有相等的面积，并且通过将第二激光束照射到半导体层上而沿着基板的整个表面形成多晶硅层。

22. 发明授权

US07977217B2 Method of crystallizing silicon 有权
标题翻译：硅结晶方法
公开(公告)号：US07977217B2
公开(公告)日：2011-07-12
申请号：US10847287
申请日：2004-05-18
申请人： JaeSung You
发明人： JaeSung You
IPC分类号： H01L21/36
CPC分类号： H01L21/0268 , H01L21/02532 , H01L21/2026 , H01L21/268
摘要： A method of crystallizing silicon including preparing a substrate having an amorphous silicon film formed thereon, aligning a mask having a first energy region and a second energy region over a first region of the amorphous silicon film formed on the substrate, irradiating a laser beam through the first and second energy regions of the mask onto the first region of the amorphous silicon film, crystallizing the first region of the amorphous silicon film by irradiating the laser beam through the first energy region of the mask, and activating the crystallized first region by irradiating the laser beam through the second energy region.
摘要翻译：一种使硅结晶的方法，包括制备其上形成有非晶硅膜的衬底，在形成在衬底上的非晶硅膜的第一区域上对准具有第一能量区和第二能区的掩模，照射激光束通过将掩模的第一和第二能量区域放置在非晶硅膜的第一区域上，通过照射穿过掩模的第一能量区域的激光束使非晶硅膜的第一区域结晶，并通过照射激光束通过第二能量区。

23. 发明授权

US07927936B2 Laser mask and crystallization method using the same 有权
标题翻译：激光掩模和结晶法使用相同
公开(公告)号：US07927936B2
公开(公告)日：2011-04-19
申请号：US12320939
申请日：2009-02-09
申请人： JaeSung You
发明人： JaeSung You
IPC分类号： H01L21/00
CPC分类号： H01L21/02675 , B23K26/066 , H01L21/02532 , H01L21/0268 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A crystallization method includes providing a substrate having a silicon thin film; positioning a laser mask having first to fourth blocks on the substrate, each block having a periodic pattern including a plurality of transmitting regions and a blocking region; and crystallizing the silicon thin film by irradiating a laser beam through the laser mask. A polycrystalline silicon film crystallized by this method is substantially free from a shot mark, and has uniform crystalline characteristics.
摘要翻译：结晶方法包括提供具有硅薄膜的基板; 将具有第一至第四块的激光掩模定位在衬底上，每个块具有包括多个发射区域和阻挡区域的周期性图案; 并通过激光束照射激光掩模使硅薄膜结晶。通过该方法结晶的多晶硅膜基本上没有喷丸，并且具有均匀的结晶特性。

24. 发明授权

US07569307B2 Laser mask and crystallization method using the same 有权
标题翻译：激光掩模和结晶法使用相同
公开(公告)号：US07569307B2
公开(公告)日：2009-08-04
申请号：US11016782
申请日：2004-12-21
申请人： Hyun Sik Seo , Yun Ho Jung , Young Joo Kim , JaeSung You
发明人： Hyun Sik Seo , Yun Ho Jung , Young Joo Kim , JaeSung You
IPC分类号： H01L21/84
CPC分类号： H01L21/0268 , B23K26/066 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675
摘要： A laser mask includes a mask pattern with edges having inverted shapes to alleviate the effects of diffraction of laser beams to reduce overlap regions such that crystallization characteristics are improved. The laser mask includes a mask pattern that includes transmitting regions and a blocking region. The edges of the mask have shapes inverted to the shapes of the edges of a silicon thin film crystallized by the pattern.
摘要翻译：激光掩模包括具有倒置形状的边缘的掩模图案，以减轻激光束的衍射的影响，以减少重叠区域，从而提高结晶特性。激光掩模包括包括透射区域和阻挡区域的掩模图案。掩模的边缘具有与通过图案结晶的硅薄膜的边缘的形状相反的形状。

25. 发明申请

US20050139925A1 Laser mask and crystallization method using the same 有权
标题翻译：激光掩模和结晶法使用相同
公开(公告)号：US20050139925A1
公开(公告)日：2005-06-30
申请号：US11013876
申请日：2004-12-17
申请人： JaeSung You
发明人： JaeSung You
IPC分类号： G02F1/136 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/04 , H01L29/786 , H01L21/00 , H01L27/01 , H01L31/0392 , H01L29/76
CPC分类号： H01L21/02675 , B23K26/066 , H01L21/02532 , H01L21/0268 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A crystallization method includes providing a substrate having a silicon thin film; positioning a laser mask having first to fourth blocks on the substrate, each block having a periodic pattern including a plurality of transmitting regions and a blocking region; and crystallizing the silicon thin film by irradiating a laser beam through the laser mask. A polycrystalline silicon film crystallized by this method is substantially free from a shot mark, and has uniform crystalline characteristics.
摘要翻译：结晶方法包括提供具有硅薄膜的基板; 将具有第一至第四块的激光掩模定位在衬底上，每个块具有包括多个发射区域和阻挡区域的周期性图案; 并通过激光束照射激光掩模使硅薄膜结晶。通过该方法结晶的多晶硅膜基本上没有喷丸，并且具有均匀的结晶特性。

26. 发明申请

US20050139580A1 Method of deciding focal plane and method of crystallization using thereof 有权
标题翻译：决定焦平面的方法及其结晶方法
公开(公告)号：US20050139580A1
公开(公告)日：2005-06-30
申请号：US11017826
申请日：2004-12-22
申请人： Hyun Seo , Yun Jung , Young Kim , JaeSung You
发明人： Hyun Seo , Yun Jung , Young Kim , JaeSung You
IPC分类号： G02F1/13 , B23K26/00 , B23K26/03 , B23K26/04 , B23K26/06 , H01L21/20 , H01L21/268 , H01L21/44 , H01L21/324
CPC分类号： H01L21/0268 , B23K26/04 , B23K26/066 , B23K2101/36 , H01L21/02686 , H01L21/2026 , H01L21/268 , Y10S117/904
摘要： A crystallization method is provided which improves a crystallization process by deciding a best-fit focal plane for a laser beam using a test mask and then applying the decided best-fit focal plane to the crystallization process. The crystallization method includes loading a test mask on a mask stage; deciding a best-fit focal plane by performing a crystallization test using the test mask, checking the test result and deciding conditions of a best-fit focal plane from the test result; moving the mask stage to a position corresponding to the best-fit focal plane; loading a mask for crystallization process onto the moved mask stage; and performing the crystallization process using the mask for crystallization process.
摘要翻译：提供一种结晶方法，其通过使用测试掩模确定用于激光束的最佳拟合焦平面，然后将所确定的最佳拟合焦平面应用于结晶过程来改善结晶过程。结晶方法包括在掩模台上装载测试掩模; 通过使用测试掩模进行结晶测试来确定最佳拟合焦平面，从测试结果检查测试结果并确定最佳拟合焦平面的条件; 将掩模台移动到对应于最佳拟合焦平面的位置; 将用于结晶过程的掩模加载到移动的掩模台上; 并使用该结晶处理用掩模进行结晶处理。

27. 发明申请

US20110253209A1 SOLAR CELL, METHOD OF FORMING EMITTER LAYER OF SOLAR CELL, AND METHOD OF MANUFACTURING SOLAR CELL 有权
标题翻译：太阳能电池，形成太阳能电池的发射体层的方法和制造太阳能电池的方法
公开(公告)号：US20110253209A1
公开(公告)日：2011-10-20
申请号：US13172696
申请日：2011-06-29
申请人： JaeSung YOU
发明人： JaeSung YOU
IPC分类号： H01L31/06 , H01L31/18
CPC分类号： H01L31/022433 , B23K26/066 , H01L31/03529 , H01L31/068 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes a substrate of a first conductive type; an emitter layer that is positioned on the substrate and is a second conductive type that is opposite to the first conductive type; first electrodes that are connected to the emitter layer; and a second electrode that is connected to the substrate, wherein the emitter layer includes a first emitter portion and a second emitter portion, the first electrodes include a finger electrode, and a bus electrode intersecting and connected to the finger electrode, and the first emitter portion and the second emitter portion are positioned under the bus electrode.
摘要翻译：太阳能电池包括第一导电类型的衬底; 位于所述基板上并且是与所述第一导电类型相反的第二导电类型的发射极层; 连接到发射极层的第一电极; 以及连接到所述基板的第二电极，其中所述发射极层包括第一发射极部分和第二发射极部分，所述第一电极包括指状电极和与所述指状电极交叉并连接的总线电极，并且所述第一发射极部分和第二发射器部分位于总线电极下方。

28. 发明授权

US07828894B2 Method for crystallizing silicon using a ramp shaped laser beam 有权
标题翻译：使用斜坡形激光束使硅结晶的方法
公开(公告)号：US07828894B2
公开(公告)日：2010-11-09
申请号：US11263838
申请日：2005-11-02
申请人： JaeSung You
发明人： JaeSung You
IPC分类号： C30B1/02
CPC分类号： H01L21/02691 , H01L21/02532 , H01L21/02686 , H01L21/2026 , H01L27/1214 , H01L27/1285 , H01L27/1296
摘要： A crystallization method, includes: forming an amorphous silicon layer on a substrate; forming a first crystallization region by irradiating the amorphous silicon layer with a laser beam having a ramp shaped cross sectional profile that decreases in a scanning direction; and performing a second crystallization by moving a predetermined length in a scanning direction so as to be partially overlapped with the first crystallization region formed by the first crystallization.
摘要翻译：一种结晶方法，包括：在衬底上形成非晶硅层; 通过用具有在扫描方向上减小的斜坡形截面轮廓的激光束照射非晶硅层来形成第一结晶区域; 并且通过沿扫描方向移动预定长度以便与通过第一结晶形成的第一结晶区域部分重叠来进行第二结晶。

29. 发明授权

US07759605B2 Method of deciding focal plane and method of crystallization using thereof 有权
标题翻译：决定焦平面的方法及其结晶方法
公开(公告)号：US07759605B2
公开(公告)日：2010-07-20
申请号：US11826160
申请日：2007-07-12
申请人： Hyun Sik Seo , Yun Ho Jung , Young Joo Kim , JaeSung You
发明人： Hyun Sik Seo , Yun Ho Jung , Young Joo Kim , JaeSung You
IPC分类号： B23K26/04 , H01L21/428
CPC分类号： H01L21/0268 , B23K26/04 , B23K26/066 , B23K2101/36 , H01L21/02686 , H01L21/2026 , H01L21/268 , Y10S117/904
摘要： A crystallization method and system are provided which improve a crystallization process by deciding a best-fit focal plane for a laser beam using a test mask and then applying the decided best-fit focal plane to the crystallization process. The crystallization method includes loading a test mask on a mask stage; deciding a best-fit focal plane by performing a crystallization test using the test mask, checking the test result and deciding conditions of a best-fit focal plane from the test result; moving the mask stage to a position corresponding to the best-fit focal plane; loading a mask for crystallization process onto the moved mask stage; and performing the crystallization process using the mask for crystallization process.
摘要翻译：提供了一种结晶方法和系统，其通过使用测试掩模确定用于激光束的最佳拟合焦平面，然后将决定的最佳拟合焦平面应用于结晶过程来改善结晶过程。结晶方法包括在掩模台上装载测试掩模; 通过使用测试掩模进行结晶测试来确定最佳拟合焦平面，从测试结果检查测试结果并确定最佳拟合焦平面的条件; 将掩模台移动到对应于最佳拟合焦平面的位置; 将用于结晶过程的掩模加载到移动的掩模台上; 并使用该结晶处理用掩模进行结晶处理。

30. 发明申请

US20090263978A1 LASER MASK AND CRYSTALLIZATION METHOD USING THE SAME 有权
标题翻译：使用其的激光掩模和结晶方法
公开(公告)号：US20090263978A1
公开(公告)日：2009-10-22
申请号：US12495377
申请日：2009-06-30
申请人： Hyun Sik SEO , Yun Ho Jung , Young Joo Kim , Jaesung You
发明人： Hyun Sik SEO , Yun Ho Jung , Young Joo Kim , Jaesung You
IPC分类号： H01L21/268
CPC分类号： H01L21/0268 , B23K26/066 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675
摘要： An embodiment of a laser crystallization method includes providing a substrate on which an amorphous silicon thin film is deposited, positioning a laser mask over the substrate, the laser mask including a mask pattern that contains transmitting regions and a blocking region, irradiating a first laser beam onto a surface of the substrate through the pattern of the laser mask to first crystallize a predetermined region of the silicon thin film, moving the laser mask or a stage on which the substrate is loaded in an X-axis direction to perform second crystallization using the laser mask, repeatedly performing the crystallization to an end of the substrate in the X-axis direction, moving the laser mask or the stage in a Y-axis direction, and repeatedly performing the crystallization in the Y-axis direction to complete crystallization.
摘要翻译：激光结晶方法的一个实施例包括提供沉积非晶硅薄膜的衬底，将激光掩模定位在衬底上，激光掩模包括含有透射区域和阻挡区域的掩模图案，照射第一激光束通过激光掩模的图案在基板的表面上，首先使硅薄膜的预定区域结晶，使激光掩模或其上载置基板的载台沿X轴方向移动，以使用第二结晶激光掩模，在X轴方向上重复地向基板的端部进行结晶，使激光掩模或载物台沿Y轴方向移动，并且在Y轴方向上反复进行结晶以完成结晶。

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