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1. 发明授权

US07759605B2 Method of deciding focal plane and method of crystallization using thereof 有权
标题翻译：决定焦平面的方法及其结晶方法
公开(公告)号：US07759605B2
公开(公告)日：2010-07-20
申请号：US11826160
申请日：2007-07-12
申请人： Hyun Sik Seo , Yun Ho Jung , Young Joo Kim , JaeSung You
发明人： Hyun Sik Seo , Yun Ho Jung , Young Joo Kim , JaeSung You
IPC分类号： B23K26/04 , H01L21/428
CPC分类号： H01L21/0268 , B23K26/04 , B23K26/066 , B23K2101/36 , H01L21/02686 , H01L21/2026 , H01L21/268 , Y10S117/904
摘要： A crystallization method and system are provided which improve a crystallization process by deciding a best-fit focal plane for a laser beam using a test mask and then applying the decided best-fit focal plane to the crystallization process. The crystallization method includes loading a test mask on a mask stage; deciding a best-fit focal plane by performing a crystallization test using the test mask, checking the test result and deciding conditions of a best-fit focal plane from the test result; moving the mask stage to a position corresponding to the best-fit focal plane; loading a mask for crystallization process onto the moved mask stage; and performing the crystallization process using the mask for crystallization process.
摘要翻译：提供了一种结晶方法和系统，其通过使用测试掩模确定用于激光束的最佳拟合焦平面，然后将决定的最佳拟合焦平面应用于结晶过程来改善结晶过程。结晶方法包括在掩模台上装载测试掩模; 通过使用测试掩模进行结晶测试来确定最佳拟合焦平面，从测试结果检查测试结果并确定最佳拟合焦平面的条件; 将掩模台移动到对应于最佳拟合焦平面的位置; 将用于结晶过程的掩模加载到移动的掩模台上; 并使用该结晶处理用掩模进行结晶处理。

2. 发明申请

US20090263978A1 LASER MASK AND CRYSTALLIZATION METHOD USING THE SAME 有权
标题翻译：使用其的激光掩模和结晶方法
公开(公告)号：US20090263978A1
公开(公告)日：2009-10-22
申请号：US12495377
申请日：2009-06-30
申请人： Hyun Sik SEO , Yun Ho Jung , Young Joo Kim , Jaesung You
发明人： Hyun Sik SEO , Yun Ho Jung , Young Joo Kim , Jaesung You
IPC分类号： H01L21/268
CPC分类号： H01L21/0268 , B23K26/066 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675
摘要： An embodiment of a laser crystallization method includes providing a substrate on which an amorphous silicon thin film is deposited, positioning a laser mask over the substrate, the laser mask including a mask pattern that contains transmitting regions and a blocking region, irradiating a first laser beam onto a surface of the substrate through the pattern of the laser mask to first crystallize a predetermined region of the silicon thin film, moving the laser mask or a stage on which the substrate is loaded in an X-axis direction to perform second crystallization using the laser mask, repeatedly performing the crystallization to an end of the substrate in the X-axis direction, moving the laser mask or the stage in a Y-axis direction, and repeatedly performing the crystallization in the Y-axis direction to complete crystallization.
摘要翻译：激光结晶方法的一个实施例包括提供沉积非晶硅薄膜的衬底，将激光掩模定位在衬底上，激光掩模包括含有透射区域和阻挡区域的掩模图案，照射第一激光束通过激光掩模的图案在基板的表面上，首先使硅薄膜的预定区域结晶，使激光掩模或其上载置基板的载台沿X轴方向移动，以使用第二结晶激光掩模，在X轴方向上重复地向基板的端部进行结晶，使激光掩模或载物台沿Y轴方向移动，并且在Y轴方向上反复进行结晶以完成结晶。

3. 发明授权

US07569307B2 Laser mask and crystallization method using the same 有权
标题翻译：激光掩模和结晶法使用相同
公开(公告)号：US07569307B2
公开(公告)日：2009-08-04
申请号：US11016782
申请日：2004-12-21
申请人： Hyun Sik Seo , Yun Ho Jung , Young Joo Kim , JaeSung You
发明人： Hyun Sik Seo , Yun Ho Jung , Young Joo Kim , JaeSung You
IPC分类号： H01L21/84
CPC分类号： H01L21/0268 , B23K26/066 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675
摘要： A laser mask includes a mask pattern with edges having inverted shapes to alleviate the effects of diffraction of laser beams to reduce overlap regions such that crystallization characteristics are improved. The laser mask includes a mask pattern that includes transmitting regions and a blocking region. The edges of the mask have shapes inverted to the shapes of the edges of a silicon thin film crystallized by the pattern.
摘要翻译：激光掩模包括具有倒置形状的边缘的掩模图案，以减轻激光束的衍射的影响，以减少重叠区域，从而提高结晶特性。激光掩模包括包括透射区域和阻挡区域的掩模图案。掩模的边缘具有与通过图案结晶的硅薄膜的边缘的形状相反的形状。

4. 发明授权

US07816196B2 Laser mask and crystallization method using the same 有权
标题翻译：激光掩模和结晶法使用相同
公开(公告)号：US07816196B2
公开(公告)日：2010-10-19
申请号：US12495377
申请日：2009-06-30
申请人： Hyun Sik Seo , Yun Ho Jung , Young Joo Kim , JaeSung You
发明人： Hyun Sik Seo , Yun Ho Jung , Young Joo Kim , JaeSung You
IPC分类号： H01L21/84
CPC分类号： H01L21/0268 , B23K26/066 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675
摘要： An embodiment of a laser crystallization method includes providing a substrate on which an amorphous silicon thin film is deposited, positioning a laser mask over the substrate, the laser mask including a mask pattern that contains transmitting regions and a blocking region, irradiating a first laser beam onto a surface of the substrate through the pattern of the laser mask to first crystallize a predetermined region of the silicon thin film, moving the laser mask or a stage on which the substrate is loaded in an X-axis direction to perform second crystallization using the laser mask, repeatedly performing the crystallization to an end of the substrate in the X-axis direction, moving the laser mask or the stage in a Y-axis direction, and repeatedly performing the crystallization in the Y-axis direction to complete crystallization.
摘要翻译：激光结晶方法的一个实施例包括提供沉积非晶硅薄膜的衬底，将激光掩模定位在衬底上，激光掩模包括含有透射区域和阻挡区域的掩模图案，照射第一激光束通过激光掩模的图案在基板的表面上，首先使硅薄膜的预定区域结晶，使激光掩模或其上载置基板的载台沿X轴方向移动，以使用第二结晶激光掩模，在X轴方向上重复地向基板的端部进行结晶，使激光掩模或载物台沿Y轴方向移动，并且在Y轴方向上反复进行结晶以完成结晶。

5. 发明授权

US07253010B2 Method of deciding focal plane and method of crystallization using thereof 有权
标题翻译：决定焦平面的方法及其结晶方法
公开(公告)号：US07253010B2
公开(公告)日：2007-08-07
申请号：US11017826
申请日：2004-12-22
申请人： Hyun Sik Seo , Yun Ho Jung , Young Joo Kim , JaeSung You
发明人： Hyun Sik Seo , Yun Ho Jung , Young Joo Kim , JaeSung You
IPC分类号： H01L21/428
CPC分类号： H01L21/0268 , B23K26/04 , B23K26/066 , B23K2101/36 , H01L21/02686 , H01L21/2026 , H01L21/268 , Y10S117/904
摘要： A crystallization method is provided which improves a crystallization process by deciding a best-fit focal plane for a laser beam using a test mask and then applying the decided best-fit focal plane to the crystallization process. The crystallization method includes loading a test mask on a mask stage; deciding a best-fit focal plane by performing a crystallization test using the test mask, checking the test result and deciding conditions of a best-fit focal plane from the test result; moving the mask stage to a position corresponding to the best-fit focal plane; loading a mask for crystallization process onto the moved mask stage; and performing the crystallization process using the mask for crystallization process.
摘要翻译：提供一种结晶方法，其通过使用测试掩模确定用于激光束的最佳拟合焦平面，然后将所确定的最佳拟合焦平面应用于结晶过程来改善结晶过程。结晶方法包括在掩模台上装载测试掩模; 通过使用测试掩模进行结晶测试来确定最佳拟合焦平面，从测试结果检查测试结果并确定最佳拟合焦平面的条件; 将掩模台移动到对应于最佳拟合焦平面的位置; 将用于结晶过程的掩模加载到移动的掩模台上; 并使用该结晶处理用掩模进行结晶处理。

6. 发明申请

US20100255663A1 SILICON CRYSTALLIZATION APPARATUS AND SILICON CRYSTALLIZATION METHOD THEREOF 有权
标题翻译：硅结晶装置及其结晶方法
公开(公告)号：US20100255663A1
公开(公告)日：2010-10-07
申请号：US12767407
申请日：2010-04-26
申请人： Yun Ho JUNG , Young Joo Kim
发明人： Yun Ho JUNG , Young Joo Kim
IPC分类号： H01L21/20
CPC分类号： H01L21/0268 , B23K26/0622 , B23K26/0823 , B23K26/0853 , B23K37/0461 , C30B11/005 , C30B29/06 , H01L21/2026 , H01L21/68
摘要： A silicon crystallization method renders it is possible to form alignment key without additional photolithography, and to adjust a substrate to a correct position by sensing a deviation of the substrate when the substrate is loaded. The silicon crystallization method includes aligning the substrate by sensing a fixed substrate with a sensing device, and moving and/or rotating a stage, wherein the sensing device faces toward an edge of the substrate to directly sense the edge of the substrate; forming alignment keys on predetermined portions of a non-display area of the substrate by correspondingly placing a mask for formation of an alignment key above the substrate; and crystallizing an amorphous silicon by correspondingly providing a mask for crystallization above the substrate.
摘要翻译：硅结晶方法使得可以在没有附加光刻的情况下形成对准键，并且通过在衬底被加载时感测衬底的偏差来将衬底调整到正确的位置。硅结晶方法包括通过感测固定基板与感测装置对基板进行定位，以及移动和/或旋转载物台，其中感测装置面向基板的边缘以直接感测基板的边缘; 通过相应地放置用于在基板上方形成对准键的掩模，在基板的非显示区域的预定部分上形成对准键; 并通过相应地在衬底上提供用于结晶的掩模来结晶非晶硅。

7. 发明授权

US07115456B2 Sequential lateral solidification device and method of crystallizing silicon using the same 有权
公开(公告)号：US07115456B2
公开(公告)日：2006-10-03
申请号：US10951821
申请日：2004-09-29
申请人： Yun Ho Jung , Young Joo Kim
发明人： Yun Ho Jung , Young Joo Kim
IPC分类号： H01L21/84 , H01L21/00 , H01L21/205
CPC分类号： H01L21/0268 , B01D9/0036 , B01D9/0063 , B23K26/066 , H01L21/2026 , H01L27/1285
摘要： A sequential lateral solidification (SLS) device and a method of crystallizing silicon using the same is disclosed, wherein alignment keys are formed on a substrate with one mask having a plurality of different patterns, and a crystallization process is progressed in parallel to an imaginary line connecting the alignment keys with information for a distance between the mask and the alignment key. The SLS device includes a laser beam generator for irradiating laser beams; a mask having a plurality of areas; a mask stage for moving the mask loaded thereto, to transmit a laser beam through a selective area of the mask; and a substrate stage for moving a substrate loaded thereto, to change portions of the substrate irradiated with the laser beam passing through the mask.

8. 发明授权

US08409940B2 Silicon crystallization apparatus and silicon crystallization method thereof 有权
标题翻译：硅结晶装置及其硅结晶方法
公开(公告)号：US08409940B2
公开(公告)日：2013-04-02
申请号：US12767407
申请日：2010-04-26
申请人： Yun Ho Jung , Young Joo Kim
发明人： Yun Ho Jung , Young Joo Kim
IPC分类号： H01L21/00
CPC分类号： H01L21/0268 , B23K26/0622 , B23K26/0823 , B23K26/0853 , B23K37/0461 , C30B11/005 , C30B29/06 , H01L21/2026 , H01L21/68
摘要： A silicon crystallization method renders it is possible to form alignment key without additional photolithography, and to adjust a substrate to a correct position by sensing a deviation of the substrate when the substrate is loaded. The silicon crystallization method includes aligning the substrate by sensing a fixed substrate with a sensing device, and moving and/or rotating a stage, wherein the sensing device faces toward an edge of the substrate to directly sense the edge of the substrate; forming alignment keys on predetermined portions of a non-display area of the substrate by correspondingly placing a mask for formation of an alignment key above the substrate; and crystallizing an amorphous silicon by correspondingly providing a mask for crystallization above the substrate.
摘要翻译：硅结晶方法使得可以在没有附加光刻的情况下形成对准键，并且通过在衬底被加载时感测衬底的偏差来将衬底调整到正确的位置。硅结晶方法包括通过感测固定基板与感测装置对基板进行定位，以及移动和/或旋转载物台，其中感测装置面向基板的边缘以直接感测基板的边缘; 通过相应地放置用于在基板上方形成对准键的掩模，在基板的非显示区域的预定部分上形成对准键; 并通过相应地在衬底上提供用于结晶的掩模来结晶非晶硅。

9. 发明授权

US07728256B2 Silicon crystallization apparatus and silicon crystallization method thereof 有权
标题翻译：硅结晶装置及其硅结晶方法
公开(公告)号：US07728256B2
公开(公告)日：2010-06-01
申请号：US11019353
申请日：2004-12-23
申请人： Yun Ho Jung , Young Joo Kim
发明人： Yun Ho Jung , Young Joo Kim
IPC分类号： B23K26/02
CPC分类号： H01L21/0268 , B23K26/0622 , B23K26/0823 , B23K26/0853 , B23K37/0461 , C30B11/005 , C30B29/06 , H01L21/2026 , H01L21/68
摘要： A novel silicon crystallization apparatus and a silicon crystallization method renders it is possible to form alignment key without additional photolithography, and to adjust a substrate to a correct position by sensing a deviation of the substrate when the substrate is loaded. The silicon crystallization apparatus includes a moving stage being moved in a horizontal direction, and a fixing plate provided in the moving stage, to fix a substrate. A rotating frame is provided in the moving stage, to rotate the fixing plate.
摘要翻译：新型硅结晶装置和硅结晶方法使得可以在没有附加光刻的情况下形成对准键，并且通过在衬底被加载时感测衬底的偏差来将衬底调整到正确的位置。硅结晶装置包括沿水平方向移动的移动台和设置在移动台中的固定板以固定基板。旋转框架设置在移动台中，以旋转固定板。

10. 发明授权

US07569793B2 Sequential lateral solidification device and method of crystallizing silicon using the same 有权
标题翻译：顺序侧向凝固装置及使用其结晶硅的方法
公开(公告)号：US07569793B2
公开(公告)日：2009-08-04
申请号：US11518202
申请日：2006-09-11
申请人： Yun Ho Jung , Young Joo Kim
发明人： Yun Ho Jung , Young Joo Kim
IPC分类号： B23K26/14 , H01L21/20
CPC分类号： H01L21/0268 , B01D9/0036 , B01D9/0063 , B23K26/066 , H01L21/2026 , H01L27/1285
摘要： A sequential lateral solidification (SLS) device and a method of crystallizing silicon using the same is disclosed, wherein alignment keys are formed on a substrate with one mask having a plurality of different patterns, and a crystallization process is progressed in parallel to an imaginary line connecting the alignment keys with information for a distance between the mask and the alignment key. The SLS device includes a laser beam generator for irradiating laser beams; a mask having a plurality of areas; a mask stage for moving the mask loaded thereto, to transmit a laser beam through a selective area of the mask; and a substrate stage for moving a substrate loaded thereto, to change portions of the substrate irradiated with the laser beam passing through the mask.
摘要翻译：公开了一种顺序横向固化（SLS）器件和使用其的使硅结晶的方法，其中对准键形成在具有多个不同图案的一个掩模的衬底上，并且结晶过程平行于假想线进行将对准键与掩模和对准键之间的距离的信息连接。 SLS装置包括用于照射激光束的激光束发生器; 具有多个区域的掩模; 用于移动加载到其上的掩模的掩模台，以将激光束透过掩模的选择区域; 以及用于移动装载到其上的基板的基板台，以改变被穿过掩模的激光束照射的基板的部分。

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