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1. 发明授权

US08207050B2 Laser mask and crystallization method using the same 有权
标题翻译：激光掩模和结晶法使用相同
公开(公告)号：US08207050B2
公开(公告)日：2012-06-26
申请号：US13050789
申请日：2011-03-17
申请人： JaeSung You
发明人： JaeSung You
IPC分类号： H01L21/20
CPC分类号： H01L21/02675 , B23K26/066 , H01L21/02532 , H01L21/0268 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A crystallization method includes providing a substrate having a silicon thin film; positioning a laser mask having first to fourth blocks on the substrate, each block having a periodic pattern including a plurality of transmitting regions and a blocking region; and crystallizing the silicon thin film by irradiating a laser beam through the laser mask. A polycrystalline silicon film crystallized by this method is substantially free from a shot mark, and has uniform crystalline characteristics.
摘要翻译：结晶方法包括提供具有硅薄膜的基板; 将具有第一至第四块的激光掩模定位在衬底上，每个块具有包括多个发射区域和阻挡区域的周期性图案; 并通过激光束照射激光掩模使硅薄膜结晶。通过该方法结晶的多晶硅膜基本上没有喷丸，并且具有均匀的结晶特性。

2. 发明授权

US07790341B2 Laser mask and method of crystallization using the same 有权
标题翻译：激光掩模和使用其的结晶方法
公开(公告)号：US07790341B2
公开(公告)日：2010-09-07
申请号：US12076120
申请日：2008-03-13
申请人： JaeSung You
发明人： JaeSung You
IPC分类号： G03F1/00 , C30B28/08
CPC分类号： H01L21/0268 , B23K26/066 , H01L21/2026 , H01L27/1214 , H01L27/1274
摘要： Provided is a method for crystallizing using a laser mask for selectively crystallizing active regions without a laser shot mark, including: providing an array substrate in which N×M active regions are defined; positioning a laser mask having first and second blocks over the substrate, wherein the first and second blocks have first and second mask patterns, respectively, and the second mask pattern is a reverse pattern of the first mask pattern; irradiating a first laser beam onto the active regions through the first block; and irradiating a second laser beam onto the active regions through the second block.
摘要翻译：提供了一种使用激光掩模结晶的方法，用于选择性地结晶活性区而没有激光拍摄标记，包括：提供其中限定N×M个活性区的阵列基板; 将具有第一和第二块的激光掩模定位在衬底上，其中第一和第二块分别具有第一和第二掩模图案，并且第二掩模图案是第一掩模图案的反向图案; 通过第一块将第一激光束照射到有源区上; 以及通过所述第二块将第二激光束照射到所述有源区上。

3. 发明授权

US07759051B2 Laser mask and method of crystallization using the same 有权
标题翻译：激光掩模和使用其的结晶方法
公开(公告)号：US07759051B2
公开(公告)日：2010-07-20
申请号：US11878591
申请日：2007-07-25
申请人： JaeSung You
发明人： JaeSung You
IPC分类号： G02B5/20 , H01L29/04
CPC分类号： H01L21/0268 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/04
摘要： A laser mask and method of crystallization using the same that can produce a polycrystalline silicon thin film having uniform crystallization characteristics. According to the present invention, a method of crystallization using a laser mask having a reference pattern in a first block and the reverse pattern of the reference pattern in a second block includes providing a substrate having a silicon thin film; positioning the first block of the laser mask over a portion of the silicon film and irradiating a first laser beam through the first block; and moving either the laser mask or the substrate to position the second block of the laser mask over the portion of the silicon film and irradiating a second laser beam through the second block.
摘要翻译：激光掩模和使用该激光掩模的结晶方法可以产生具有均匀结晶特性的多晶硅薄膜。根据本发明，使用在第一块中具有参考图案的激光掩模和第二块中的参考图案的反向图案的结晶方法包括提供具有硅薄膜的基板; 将所述激光掩模的所述第一块定位在所述硅膜的一部分上，并且将第一激光束照射通过所述第一块; 以及移动所述激光掩模或所述基板以将所述激光掩模的所述第二块定位在所述硅膜的所述部分上并且将第二激光束照射通过所述第二块。

4. 发明授权

US07714331B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US07714331B2
公开(公告)日：2010-05-11
申请号：US11987233
申请日：2007-11-28
申请人： JaeSung You
发明人： JaeSung You
IPC分类号： H01L29/786
CPC分类号： H01L21/0268 , B23K26/066 , H01L21/2026
摘要： A display device includes a gate line and a data line crossing each other to form a pixel; a thin film transistor (TFT) near the crossing, the TFT including a polycrystalline silicon layer, wherein the polycrystalline silicon layer includes a plurality of first, second and third circular crystals, and the three first, second and third adjacent circular crystals form one equilateral triangle, and six of the equilateral triangles form a regular hexagon, wherein the second crystals are grown radially staffing from circumferences of the first crystals and wherein the third crystals are grown radially starting from circumferences of the first or second crystals.
摘要翻译：显示装置包括彼此交叉以形成像素的栅极线和数据线; 在交叉点附近的薄膜晶体管（TFT），所述TFT包括多晶硅层，其中所述多晶硅层包括多个第一，第二和第三圆形晶体，并且所述三个第一，第二和第三相邻圆形晶体形成一个等边三角形和六个等边三角形形成正六边形，其中第二晶体从第一晶体的周缘径向配置，并且其中第三晶体从第一或第二晶体的周边径向生长。

5. 发明申请

US20080166668A1 Laser mask and method of crystallization using the same 有权
公开(公告)号：US20080166668A1
公开(公告)日：2008-07-10
申请号：US12076120
申请日：2008-03-13
申请人： JaeSung You
发明人： JaeSung You
IPC分类号： G03F7/00
CPC分类号： H01L21/0268 , B23K26/066 , H01L21/2026 , H01L27/1214 , H01L27/1274
摘要： Provided is a method for crystallizing using a laser mask for selectively crystallizing active regions without a laser shot mark, including: providing an array substrate in which N×M active regions are defined; positioning a laser mask having first and second blocks over the substrate, wherein the first and second blocks have first and second mask patterns, respectively, and the second mask pattern is a reverse pattern of the first mask pattern; irradiating a first laser beam onto the active regions through the first block; and irradiating a second laser beam onto the active regions through the second block.

6. 发明授权

US07384476B2 Method for crystallizing silicon 有权
标题翻译：硅结晶方法
公开(公告)号：US07384476B2
公开(公告)日：2008-06-10
申请号：US10851180
申请日：2004-05-24
申请人： JaeSung You
发明人： JaeSung You
IPC分类号： C30B3/00 , H01L21/20 , H01L29/12
CPC分类号： H01L21/0268 , B23K26/066 , C30B13/24 , C30B29/06 , H01L21/02532 , H01L21/2026 , Y10S117/904
摘要： A method for crystallizing silicon is provided. The method includes: forming an amorphous silicon layer on a substrate; aligning a mask above the substrate, the mask being divided into a plurality of blocks, each block having at least two transmission patterns, the transmission patterns of one block and the transmission patterns of another adjacent block being complimentary with each other and the mask including at least two diffraction patterns disposed between the transmission patterns; forming a first crystallization region on the amorphous silicon layer by irradiating a laser beam through the transmission patterns of the mask; and displacing the substrate or the mask by a predetermined distance and irradiating a laser beam onto the substrate to recrystallize the crystallization region using the laser beam that passes through the diffraction patterns, and forming a second crystallization region using the laser beam that passes through the transmission patterns.
摘要翻译：提供了一种结晶硅的方法。该方法包括：在衬底上形成非晶硅层; 将掩模对准衬底上方，掩模被划分为多个块，每个块具有至少两个透射图案，一个块的透射图案和另一个相邻块的透射图案彼此互补，掩模包括在布置在传输图案之间的至少两个衍射图案; 通过照射通过掩模的透射图案的激光束在非晶硅层上形成第一结晶区域; 将基板或掩模移动预定距离，并将激光束照射到基板上，使用穿过衍射图案的激光束使结晶区域再结晶，并使用穿过透射体的激光束形成第二结晶区域模式。

7. 发明申请

US20080011726A1 Method of deciding focal plane and method of crystallization using thereof 有权
标题翻译：决定焦平面的方法及其结晶方法
公开(公告)号：US20080011726A1
公开(公告)日：2008-01-17
申请号：US11826160
申请日：2007-07-12
申请人： Hyun Seo , Yun Jung , Young Kim , JaeSung You
发明人： Hyun Seo , Yun Jung , Young Kim , JaeSung You
IPC分类号： B23K26/02
CPC分类号： H01L21/0268 , B23K26/04 , B23K26/066 , B23K2101/36 , H01L21/02686 , H01L21/2026 , H01L21/268 , Y10S117/904
摘要： A crystallization method and system are provided which improve a crystallization process by deciding a best-fit focal plane for a laser beam using a test mask and then applying the decided best-fit focal plane to the crystallization process. The crystallization method includes loading a test mask on a mask stage; deciding a best-fit focal plane by performing a crystallization test using the test mask, checking the test result and deciding conditions of a best-fit focal plane from the test result; moving the mask stage to a position corresponding to the best-fit focal plane; loading a mask for crystallization process onto the moved mask stage; and performing the crystallization process using the mask for crystallization process.
摘要翻译：提供了一种结晶方法和系统，其通过使用测试掩模确定用于激光束的最佳拟合焦平面，然后将决定的最佳拟合焦平面应用于结晶过程来改善结晶过程。结晶方法包括在掩模台上装载测试掩模; 通过使用测试掩模进行结晶测试来确定最佳拟合焦平面，从测试结果检查测试结果并确定最佳拟合焦平面的条件; 将掩模台移动到对应于最佳拟合焦平面的位置; 将用于结晶过程的掩模加载到移动的掩模台上; 并使用该结晶处理用掩模进行结晶处理。

8. 发明授权

US07279383B2 Liquid crystal display device and method of fabricating the same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US07279383B2
公开(公告)日：2007-10-09
申请号：US10875308
申请日：2004-06-25
申请人： JaeSung You
发明人： JaeSung You
IPC分类号： H01L21/8242
CPC分类号： G02F1/136277 , G02F2001/136231 , Y10S438/924
摘要： There is disclosed a liquid crystal display device and a fabricating method thereof that reduce the number of processes and production cost. A liquid crystal display device and a fabricating method thereof according to an embodiment of the present invention forms a poly-silicon pattern by partially crystallizing an amorphous silicon, and simultaneously etches the amorphous silicon and the poly-silicon pattern, thereby removing the amorphous silicon and leaving the poly-silicon pattern on the substrate.
摘要翻译：公开了一种减少处理次数和生产成本的液晶显示装置及其制造方法。根据本发明的实施例的液晶显示装置及其制造方法通过部分地使非晶硅结晶而形成多晶硅图案，同时蚀刻非晶硅和多晶硅图案，从而除去非晶硅和将多晶硅图案留在基片上。

9. 发明申请

US20060003506A1 Crystallization method and apparatus thereof 有权
公开(公告)号：US20060003506A1
公开(公告)日：2006-01-05
申请号：US11158005
申请日：2005-06-22
申请人： JaeSung You
发明人： JaeSung You
IPC分类号： H01L21/20 , B23K26/00
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2026 , H01L27/1285
摘要： A method of crystallizing an amorphous silicon thin film on a substrate includes loading a substrate onto a stage, the substrate having an amorphous silicon thin film thereon and having first and second regions, performing a first crystallization by irradiating a laser beam on the first region of the amorphous silicon thin film, the first region being crystallized by moving the stage by a first distance, and performing a second crystallization by irradiating the laser beam on the second region, the second region being crystallized by moving the stage by a second distance.

10. 发明申请

US20050142453A1 Laser mask and crystallization method using the same 有权
标题翻译：激光掩模和结晶法使用相同
公开(公告)号：US20050142453A1
公开(公告)日：2005-06-30
申请号：US11016782
申请日：2004-12-21
申请人： Hyun Seo , Yun Jung , Young Kim , JaeSung You
发明人： Hyun Seo , Yun Jung , Young Kim , JaeSung You
IPC分类号： G02F1/136 , B23K26/06 , G03F1/14 , G03F9/00 , H01L21/00 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/786
CPC分类号： H01L21/0268 , B23K26/066 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675
摘要： A laser mask includes a mask pattern with edges having inverted shapes to alleviate the effects of diffraction of laser beams to reduce overlap regions such that crystallization characteristics are improved. The laser mask includes a mask pattern that includes transmitting regions and a blocking region. The edges of the mask have shapes inverted to the shapes of the edges of a silicon thin film crystallized by the pattern.
摘要翻译：激光掩模包括具有倒置形状的边缘的掩模图案，以减轻激光束的衍射的影响，以减少重叠区域，从而提高结晶特性。激光掩模包括包括透射区域和阻挡区域的掩模图案。掩模的边缘具有与通过图案结晶的硅薄膜的边缘的形状相反的形状。

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