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21. 发明申请

US20070284526A1 Inspection apparatus for circuit pattern 审中-公开
标题翻译：电路图案检查装置
公开(公告)号：US20070284526A1
公开(公告)日：2007-12-13
申请号：US11790330
申请日：2007-04-25
申请人： Yasuhiko Nara , Masaaki Nojiri , Kouichi Hayakawa , Hiroyuki Shinada , Yukio Hagita
发明人： Yasuhiko Nara , Masaaki Nojiri , Kouichi Hayakawa , Hiroyuki Shinada , Yukio Hagita
IPC分类号： G01N23/00
CPC分类号： H01J37/28 , H01J2237/004 , H01J2237/2817
摘要： In a circuit pattern inspection apparatus, while an electron beam is irradiated onto a surface of a substrate having a plurality of chips where circuit patterns have been formed, a signal produced from the irradiated substrate is detected so as to form an image, and then, the formed image is compared with another image in order to detect a defect on the circuit patterns. Before the electron beam is irradiated onto either the chip or the plurality of chips so as to acquire the image for an inspection purpose, an electron beam is previously irradiated onto the region to be irradiated, so that charging conditions of the substrate to be inspected are arbitrarily controlled.
摘要翻译：在电路图案检查装置中，当电子束照射到已经形成电路图案的具有多个芯片的基板的表面上时，检测从照射的基板产生的信号以形成图像，将形成的图像与另一图像进行比较，以便检测电路图案上的缺陷。在将电子束照射到芯片或多个芯片上以获取用于检查目的的图像之前，将电子束预先照射到要照射的区域上，使得要检查的基板的充电条件为任意控制

22. 发明授权

US07260256B2 Method and system for inspecting a pattern 失效
标题翻译：检查图案的方法和系统
公开(公告)号：US07260256B2
公开(公告)日：2007-08-21
申请号：US09571938
申请日：2000-05-16
申请人： Takashi Hiroi , Maki Tanaka , Masahiro Watanabe , Asahiro Kuni , Hiroyuki Shinada , Mari Nozoe , Aritoshi Sugimoto , Chie Shishido
发明人： Takashi Hiroi , Maki Tanaka , Masahiro Watanabe , Asahiro Kuni , Hiroyuki Shinada , Mari Nozoe , Aritoshi Sugimoto , Chie Shishido
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G06T2207/10056 , G06T2207/30148
摘要： The present invention relates to detection of defects with simple specification of the coordinates, in the inspection of an object having a plurality of patterns in which a portion having the two-dimensional repetition and portions having the repetition only in the X direction and in the Y direction are mixedly present. The cross comparison between a notice point and comparison points, for example which are repetitive pitches away from the notice point, is carried out, and only the portion having the difference which can be found out with any of the comparison points is extracted as a defect candidate, which results in that the portion having the two-dimensional repetition as well as the portion having the repetition only in the X direction or in the Y direction can be inspected. As a result, while the portion, such as an isolated point, having no repetition both in the X direction and in the Y direction is extracted as the defect candidate, the defect candidate is not treated as the defect in the case where the defect candidate of interest occurs regularly in a plurality of objects to be inspected, so that such a defect candidate is excluded to extract only a true defect.
摘要翻译：本发明涉及通过简单的坐标指定来检测缺陷，在检查具有多个图案的物体时，其中具有二维重复的部分和仅在X方向上重复的部分和Y 方向混合存在。执行通知点和比较点之间的交叉比较，例如，距离通知点的重复间距是比较点，并且只有具有任何比较点可以找出的具有差异的部分被提取为缺陷候选，这导致可以检查具有二维重复的部分以及仅在X方向或Y方向上具有重复的部分。结果，虽然提取了在X方向和Y方向上都没有重复的诸如孤立点的部分作为缺陷候选，但是在缺陷候选者的情况下，缺陷候选不被视为缺陷感兴趣的事件定期发生在要检查的多个对象中，因此排除这样的缺陷候选者仅提取真实的缺陷。

23. 发明授权

US07223975B2 Inspection apparatus for circuit pattern 有权
公开(公告)号：US07223975B2
公开(公告)日：2007-05-29
申请号：US10843642
申请日：2004-05-12
申请人： Yasuhiko Nara , Masaaki Nojiri , Kouichi Hayakawa , Hiroyuki Shinada , Yukio Hagita
发明人： Yasuhiko Nara , Masaaki Nojiri , Kouichi Hayakawa , Hiroyuki Shinada , Yukio Hagita
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , H01J2237/004 , H01J2237/2817
摘要： In a circuit pattern inspection apparatus, while an electron beam is irradiated onto a surface of a substrate having a plurality of chips where circuit patterns have been formed, a signal produced from the irradiated substrate is detected so as to form an image, and then, the formed image is compared with another image in order to detect a defect on the circuit patterns. Before the electron beam is irradiated onto either the chip or the plurality of chips so as to acquire the image for an inspection purpose, an electron beam is previously irradiated onto the region to be irradiated, so that charging conditions of the substrate to be inspected are arbitrarily controlled.

24. 发明申请

US20060289751A1 Charged particle beam apparatus and automatic astigmatism adjustment method 有权
公开(公告)号：US20060289751A1
公开(公告)日：2006-12-28
申请号：US11404610
申请日：2006-04-13
申请人： Masahiro Watanabe , Hiroyuki Shinada , Atsuko Takafuji , Masami lizuka , Yasuhiro Gunji , Kouichi Hayakawa , Masayoshi Takeda
发明人： Masahiro Watanabe , Hiroyuki Shinada , Atsuko Takafuji , Masami lizuka , Yasuhiro Gunji , Kouichi Hayakawa , Masayoshi Takeda
IPC分类号： G21K7/00
CPC分类号： G01R31/307 , H01J37/153 , H01J2237/1532 , H01J2237/216 , H01J2237/2817
摘要： According to the invention, techniques for automatically adjusting for astigmatism in a charged particle beam apparatus. Embodiments according to the present invention can provide a charged particle beam apparatus and an automatic astigmatism adjustment methods capable of automatically correcting astigmatism and a focal point in a relatively short period of time by finding a plurality of astigmatism correction quantities and a focal point correction quantity in a single operation from a relatively small number of 2 dimensional images. Specific embodiments can perform such automatic focusing while minimizing damages inflicted on subject samples. Embodiments include, among others, a charged particle optical system for carrying out an inspection, a measurement and a fabrication with a relatively high degree of accuracy by using a charged particle beam.

25. 发明申请

US20060231758A1 Inspection system, inspection method, and process management method 有权
公开(公告)号：US20060231758A1
公开(公告)日：2006-10-19
申请号：US11450459
申请日：2006-06-12
申请人： Hiroshi Makino , Hisaya Murakoshi , Hiroyuki Shinada , Hideo Todokoro
发明人： Hiroshi Makino , Hisaya Murakoshi , Hiroyuki Shinada , Hideo Todokoro
IPC分类号： G21K7/00
CPC分类号： H01J37/292 , G01N23/04 , H01J2237/2817
摘要： The present invention relates to an inspection apparatus comprising: an electron emitting unit for sequentially emitting an electron beam in the direction of the inspection area of a sample; a decelerating means for drawing back the electron beam in the vicinity of the inspection area; an imaging unit for forming images of the electron beam, which has been drawn back in the vicinity of the inspection area, on multiple different image forming conditions; an image detecting unit for capturing the electron beam that formed an image corresponding to each image forming condition and an image processing unit for comparing the images on different image forming conditions with one another to thereby detect a defect in the inspection area.

26. 发明授权

US07122796B2 Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same 有权
标题翻译：电子束检查方法及装置及半导体制造方法及其制造线
公开(公告)号：US07122796B2
公开(公告)日：2006-10-17
申请号：US11003506
申请日：2004-12-06
申请人： Takashi Hiroi , Maki Tanaka , Masahiro Watanabe , Asahiro Kuni , Yukio Matsuyama , Yuji Takagi , Hiroyuki Shinada , Mari Nozoe , Aritoshi Sugimoto
发明人： Takashi Hiroi , Maki Tanaka , Masahiro Watanabe , Asahiro Kuni , Yukio Matsuyama , Yuji Takagi , Hiroyuki Shinada , Mari Nozoe , Aritoshi Sugimoto
IPC分类号： G01N23/00
CPC分类号： H01J37/28 , H01J2237/2817
摘要： An inspection method and apparatus includes control of an acceleration voltage of an electron beam, irradiation of the electron beam to an object to be inspected mounted on a stage which is continuously moving at least in one direction, and detection of at least one of secondary electrons and reflected electrons emanated from the object in response to the irradiation. An image of the object is obtained from the detected electron by using positional information of the stage and inspection or measurement of the object is conducted using and obtained image. In the detection, an electric field in the vicinity of the object mounted on the stage is controlled so that at least one secondary electrons and the reflected electrons emanated from the object in response to the irradiation of the electron beam are decelerated.
摘要翻译：检查方法和装置包括控制电子束的加速电压，将电子束照射到安装在至少在一个方向上连续移动的台上的被检查物体，以及二次电子中的至少一个的检测以及响应于照射从物体发射的反射电子。通过使用舞台的位置信息从被检测的电子获得对象的图像，并使用获得的图像进行对象的检查或测量。在检测中，控制安装在平台上的物体附近的电场，使得响应于电子束的照射而从物体发出的至少一个二次电子和反射电子减速。

27. 发明授权

US06987265B2 Method and an apparatus of an inspection system using an electron beam 失效
公开(公告)号：US06987265B2
公开(公告)日：2006-01-17
申请号：US10083481
申请日：2002-02-27
申请人： Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
发明人： Yuko Iwabuchi , Hideo Todokoro , Hiroyoshi Mori , Mitsugu Sato , Yasutsugu Usami , Mikio Ichihashi , Satoru Fukuhara , Hiroyuki Shinada , Yutaka Kaneko , Katsuya Sugiyama , Atsuko Takafuji , Hiroshi Toyama
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , G01N23/20 , G01N23/2251 , G03F7/7065 , G06T7/001 , G06T2207/10056 , G06T2207/30148 , H01J37/04 , H01J37/20 , H01J37/265 , H01J2237/04756 , H01J2237/20221 , H01J2237/2444 , H01J2237/24592 , H01J2237/2817 , H01J2237/31766
摘要： Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

28. 发明授权

US06885012B2 Convergent charged particle beam apparatus and inspection method using same 有权
标题翻译：收敛带电粒子束装置及其检验方法
公开(公告)号：US06885012B2
公开(公告)日：2005-04-26
申请号：US10851322
申请日：2004-05-24
申请人： Maki Tanaka , Masahiro Watanabe , Takashi Hiroi , Hiroyuki Shinada , Taku Ninomiya
发明人： Maki Tanaka , Masahiro Watanabe , Takashi Hiroi , Hiroyuki Shinada , Taku Ninomiya
IPC分类号： G01N1/28 , G01Q30/16 , G01Q30/20 , G01Q40/00 , G01Q60/44 , H01J37/21 , H01J37/244 , H01J37/28
CPC分类号： H01J37/21 , G01N2001/2893 , H01J2237/2817 , H01J2237/304
摘要： A convergent charged particle beam apparatus includes an electron beam system which emits a converged electron beam, a vacuum chamber which is connected to the electron beam system, and a stage which mounts a specimen and moves at least in one direction inside of the vacuum chamber. An electron beam image observation unit observes an electron beam image of a surface of the specimen. A height detector optically detects a height of the specimen mounted on the stage by illuminating the surface of said specimen with light and by detecting reflected light of the illumination reflected from the surface of the specimen, and a controller controls a focus position of the electron beam in accordance with an output from the height detector while the stage is moving at least in one direction.
摘要翻译：收敛带电粒子束装置包括发射会聚电子束的电子束系统，连接到电子束系统的真空室和安装样本并至少沿真空室内的一个方向移动的台。电子束图像观察单元观察样品表面的电子束图像。高度检测器通过用光照射所述样本的表面并通过检测从样本表面反射的照明的反射光来光学地检测安装在舞台上的样本的高度，并且控制器控制电子束的聚焦位置根据来自高度检测器的输出，而舞台至少在一个方向上移动。

29. 发明授权

US06825480B1 Charged particle beam apparatus and automatic astigmatism adjustment method 有权
标题翻译：带电粒子束装置和自动散光调节方法
公开(公告)号：US06825480B1
公开(公告)日：2004-11-30
申请号：US09603459
申请日：2000-06-22
申请人： Masahiro Watanabe , Hiroyuki Shinada , Atsuko Takafuji , Masami Iizuka , Yasuhiro Gunji , Kouichi Hayakawa , Masayoshi Takeda
发明人： Masahiro Watanabe , Hiroyuki Shinada , Atsuko Takafuji , Masami Iizuka , Yasuhiro Gunji , Kouichi Hayakawa , Masayoshi Takeda
IPC分类号： G01B1100
CPC分类号： G01R31/307 , H01J37/153 , H01J2237/1532 , H01J2237/216 , H01J2237/2817
摘要： According to the invention, techniques for automatically adjusting for astigmatism in a charged particle beam apparatus. Embodiments according to the present invention can provide a charged particle beam apparatus and an automatic astigmatism adjustment methods capable of automatically correcting astigmatism and a focal point in a relatively short period of time by finding a plurality of astigmatism correction quantities and a focal point correction quantity in a single operation from a relatively small number of 2 dimensional images. Specific embodiments can perform such automatic focusing while minimizing damages inflicted on subject samples. Embodiments include, among others, a charged particle optical system for carrying out an inspection, a measurement and a fabrication with a relatively high degree of accuracy by using a charged particle beam.
摘要翻译：根据本发明，用于自动调整带电粒子束装置中的像散的技术。根据本发明的实施例可以提供一种带电粒子束装置和自动像散调节方法，其能够通过在多个像散校正量和焦点校正量中找到多个像散校正量和焦点校正量来在相对短的时间段内自动校正散光和焦点来自相对较少数量的二维图像的单一操作。具体实施例可以执行这种自动聚焦，同时最小化对受试样品造成的损害。实施例包括用于通过使用带电粒子束来进行检查，测量和以相对高的精度制造的带电粒子光学系统。

30. 发明授权

US06703850B2 Method of inspecting circuit pattern and inspecting instrument 失效
标题翻译：电路图案检查方法
公开(公告)号：US06703850B2
公开(公告)日：2004-03-09
申请号：US10430188
申请日：2003-05-07
申请人： Mari Nozoe , Hiroyuki Shinada , Kenji Watanabe , Keiichi Saiki , Aritoshi Sugimoto , Hiroshi Morioka , Maki Tanaka , Hiroshi Miyai
发明人： Mari Nozoe , Hiroyuki Shinada , Kenji Watanabe , Keiichi Saiki , Aritoshi Sugimoto , Hiroshi Morioka , Maki Tanaka , Hiroshi Miyai
IPC分类号： G01R31305
CPC分类号： H01J37/28 , G01R31/307 , G09G3/006 , H01J37/265 , H01J2237/221 , H01J2237/2817 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： In order to obtain optimum irradiation conditions of an electron beam according to the material and structure of a circuit pattern to be inspected and the kind of a failure to be detected and inspect under the optimum conditions without delay of the inspection time, an inspection device for irradiating the electron beam 19 to the sample board 9 which is a sample, detecting generated secondary electrons by the detector 7, storing obtained signals sequentially in the storage, comparing the same pattern stored in the storage by the comparison calculation unit, and extracting a failure by comparing the predetermined threshold value with the comparison signal by the failure decision unit is provided, wherein the optimum value of the irradiation energy is stored in the data base inside the device beforehand according to the structure of a sample and a recommended value of the irradiation energy suited to inspection can be searched for by inputting or selecting the irradiation energy by a user or inputting information regarding the structure of an article to be inspected.
摘要翻译：为了根据要检查的电路图案的材料和结构获得电子束的最佳照射条件以及在最佳条件下无故障检测的种类和检查时间的延迟，检查装置将电子束19照射到作为样本的样品板9，由检测器7检测产生的二次电子，将获得的信号顺序地存储在存储器中，比较由比较计算单元存储在存储器中的相同模式，并提取故障提供了通过故障判定单元将预定阈值与比较信号进行比较，其中根据样本的结构和照射的推荐值，将照射能量的最佳值预先存储在设备内部的数据库中可以通过使用照射能量的输入或选择来搜索适合于检查的能量或输入关于被检查物品的结构的信息。

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