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21. 发明授权

US4841345A Modified conductivity modulated MOSFET 失效
标题翻译：改进的电导率调制MOSFET
公开(公告)号：US4841345A
公开(公告)日：1989-06-20
申请号：US900443
申请日：1986-08-26
申请人： Gourab Majumdar
发明人： Gourab Majumdar
IPC分类号： H01L29/08 , H01L29/739
CPC分类号： H01L29/7395 , H01L29/0834 , H01L2924/0002
摘要： A planar vertical diffusion self aligned conductivity modulated MOSFET comprising a semiconductor island region (70) of a first conductivity type having a high impurity concentration and formed in an island shape in a predetermined region on the surface on the side of a electrode (8) of a semiconductor substrate layer (10) of a second conductivity type having a high impurity concentration.
摘要翻译：一种平面垂直扩散自对准导电调制MOSFET，包括具有高杂质浓度的第一导电类型的半导体岛区（70），并且在电极（8）侧的表面上的预定区域中形成岛状具有高杂质浓度的第二导电类型的半导体衬底层（10）。

22. 发明授权

US08421087B2 Semiconductor module including a switch and non-central diode 有权
标题翻译：半导体模块包括开关和非中心二极管
公开(公告)号：US08421087B2
公开(公告)日：2013-04-16
申请号：US13311762
申请日：2011-12-06
申请人： Kiyoshi Arai , Gourab Majumdar
发明人： Kiyoshi Arai , Gourab Majumdar
IPC分类号： H01L25/07 , H01L25/18 , H01L29/12
CPC分类号： H01L27/0664 , H01L21/8213 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/071 , H01L25/074 , H01L25/18 , H01L29/6606 , H01L29/861 , H01L29/872 , H01L2224/32145 , H01L2224/371 , H01L2224/37147 , H01L2224/40095 , H01L2224/40225 , H01L2224/40227 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49107 , H01L2224/73263 , H01L2224/73265 , H01L2225/06562 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01068 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/00 , H01L2224/83801
摘要： A semiconductor module having one or more silicon carbide diode elements mounted on a switching element is provided in which the temperature rise is reduced by properly disposing each of the diode elements on the switching element, to thereby provide a thermal dissipation path for the respective diode elements. The respective diode elements are arranged on a non-central portion of the switching element, to facilitate dissipation of the heat produced by each of the diode elements, whereby the temperature rise in the semiconductor module is reduced.
摘要翻译：提供了一种具有安装在开关元件上的一个或多个碳化硅二极管元件的半导体模块，其中通过将开关元件中的每个二极管元件适当地布置来降低温度上升，从而为各个二极管元件提供散热路径。各个二极管元件布置在开关元件的非中心部分上，以便于散发由每个二极管元件产生的热量，从而降低半导体模块中的温度升高。

23. 发明授权

US07423391B2 Power conversion device and vehicle equipped therewith 失效
标题翻译：电力转换装置及配备的车辆
公开(公告)号：US07423391B2
公开(公告)日：2008-09-09
申请号：US11579272
申请日：2005-05-18
申请人： Hichirosai Oyobe , Tetsuhiro Ishikawa , Tsuyoshi Yano , Masahiro Kimata , Gourab Majumdar , Yoshiharu Yu
发明人： Hichirosai Oyobe , Tetsuhiro Ishikawa , Tsuyoshi Yano , Masahiro Kimata , Gourab Majumdar , Yoshiharu Yu
IPC分类号： H02M7/797 , B60L11/18
CPC分类号： H02M7/487 , H02M7/797
摘要： A power conversion portion (10) and a connection portion (20) converting power between a fuel cell (FC) and a battery (BAT) corresponding to dc power supply and a motor generator (MG) corresponding to an ac machine, are configured of a matrix converter. For a power flow pattern requiring that the dc power supply provide high voltage, a switch (SCd) in the connection portion (20) operates in response to a control signal received from a control device (30) to electrically connect a power supply line (LC) to a power supply line (Ld) to connect the fuel cell (FC) and the battery (BAT) in series.
摘要翻译：在对应于直流电源的燃料电池（FC）和电池（BAT）之间转换功率的电力转换部分（10）和转换部分（20）和与交流电机对应的电动发电机（MG）矩阵转换器。对于要求直流电源提供高电压的功率流模式，连接部分（20）中的开关（SCd）响应于从控制装置（30）接收的控制信号而工作，以将电源线（ LC）连接到电源线（Ld）以将燃料电池（FC）和电池（BAT）串联连接。

24. 发明授权

US06762937B2 Power module 有权
标题翻译：电源模块
公开(公告)号：US06762937B2
公开(公告)日：2004-07-13
申请号：US10314989
申请日：2002-12-10
申请人： Nobuyoshi Kimoto , Takanobu Yoshida , Naoki Yoshimatsu , Masuo Koga , Dai Nakajima , Gourab Majumdar , Masakazu Fukada
发明人： Nobuyoshi Kimoto , Takanobu Yoshida , Naoki Yoshimatsu , Masuo Koga , Dai Nakajima , Gourab Majumdar , Masakazu Fukada
IPC分类号： H05K720
CPC分类号： H02M7/003 , H01L23/057 , H01L23/50 , H01L23/60 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/4811 , H01L2224/48137 , H01L2224/48227 , H01L2224/49109 , H01L2224/73265 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01074 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1532 , H01L2924/16152 , H01L2924/19041 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H01L2924/3025 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： A power module includes a substrate with a power semiconductor device mounted thereon, a case having an interior in which the substrate is disposed, a cooling fin having a surface on which the substrate and the case are placed, and a smoothing capacitor disposed on an opposite surface of the cooling fin from the surface on which the substrate is placed, the smoothing capacitor being electrically connected to the power semiconductor device for smoothing a voltage to be externally supplied to the power semiconductor device.
摘要翻译：功率模块包括其上安装有功率半导体器件的衬底，具有其中设置有衬底的内部的壳体，具有衬底和壳体的表面的冷却翅片以及布置在其上的平滑电容器所述平滑电容器电连接到所述功率半导体器件，用于使外部提供给所述功率半导体器件的电压平滑。

25. 发明授权

US06639295B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06639295B2
公开(公告)日：2003-10-28
申请号：US09954172
申请日：2001-09-18
申请人： Gourab Majumdar , Shinji Hatae , Akihisa Yamamoto
发明人： Gourab Majumdar , Shinji Hatae , Akihisa Yamamoto
IPC分类号： H01L2900
CPC分类号： H01L29/7395 , H01L29/0834 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor substrate, semiconductor regions belonging to the IGBT are formed in an IGBT region and semiconductor regions belonging to the diode are formed in a diode region. The IGBT and the diode are connected in anti-parallel to each other. A trench in which an insulator is buried is formed between the IGBT region and the diode region. The insulator restricts the reverse recovery current which flows from the diode region into the IGBT region. Thus, semiconductor regions of an IGBT and a diode connected in anti-parallel with each other are fabricated in a single semiconductor substrate and the chip size is reduced.
摘要翻译：在半导体基板中，属于IGBT的半导体区域形成在IGBT区域中，属于二极管的半导体区域形成在二极管区域中。 IGBT和二极管彼此反并联连接。在IGBT区域和二极管区域之间形成有埋入绝缘体的沟槽。绝缘体限制从二极管区域流入IGBT区域的反向恢复电流。因此，在单个半导体衬底中制造IGBT和二极管彼此反并联的半导体区域，并且芯片尺寸减小。

26. 发明授权

US5747876A Semiconductor device and semiconductor module 失效
标题翻译：半导体器件和半导体模块
公开(公告)号：US5747876A
公开(公告)日：1998-05-05
申请号：US680614
申请日：1996-07-16
申请人： Gourab Majumdar , Satoshi Mori , Sukehisa Noda , Tooru Iwagami , Yoshio Takagi , Hisashi Kawafuji
发明人： Gourab Majumdar , Satoshi Mori , Sukehisa Noda , Tooru Iwagami , Yoshio Takagi , Hisashi Kawafuji
IPC分类号： H01L23/28 , H01L23/24 , H01L23/36 , H01L23/433 , H01L23/495 , H01L25/07 , H01L25/16 , H01L25/18 , H05K1/02 , H01L23/22
CPC分类号： H05K1/0204 , H01L23/24 , H01L23/4334 , H01L23/49575 , H01L25/16 , H01L25/165 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/8547 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01079 , H01L2924/13055 , H01L2924/14 , H01L2924/181 , H01L2924/19105 , H01L2924/19107 , H05K2201/0382 , H05K2201/09054 , H05K2201/10689
摘要： It is an object to facilitate assembly of an application device. A device (101) is provided with a heat sink (51) to radiate loss heat of an IGBT element (11) as a power semiconductor element to an external radiation fin. External terminals (5 and 6) connected to an external circuit substrate protrude in the direction in which the exposed surface of the heat sink (51) is directed. Accordingly, when assembling an application device by mounting the device (101) on the external circuit substrate together with other circuit elements, it is possible to mount the device (101) and other circuit elements together on the common main surface of the circuit substrate, i.e., on its main surface on the side opposite to the side where the radiation fin is attached. Accordingly, it is possible to collectively apply solder on the common main surface of the circuit substrate and collectively solder the device (101) and the other circuit elements.
摘要翻译：其目的是便于组装应用装置。设备（101）设置有散热器（51），以将作为功率半导体元件的IGBT元件（11）的损耗散热到外部散热片。连接到外部电路基板的外部端子（5和6）沿着散热器（51）的暴露表面被引导的方向突出。因此，当通过将装置（101）与其它电路元件一起安装在外部电路基板上来组装应用装置时，可以将装置（101）和其它电路元件安装在电路基板的公共主表面上，即，在与辐射翅片附接的一侧相对的一侧的主表面上。因此，可以在电路基板的公共主表面上共同地施加焊料，并且一起焊接器件（101）和其他电路元件。

27. 发明授权

US5706189A Method of driving a power converter 失效
标题翻译：驱动电源转换器的方法
公开(公告)号：US5706189A
公开(公告)日：1998-01-06
申请号：US675719
申请日：1996-07-02
申请人： Gourab Majumdar , Shinji Hatae
发明人： Gourab Majumdar , Shinji Hatae
IPC分类号： H02M7/537 , H02M7/5387 , H03K17/06 , H03K17/082 , H02M7/219
CPC分类号： H02M7/5387 , H03K17/0828
摘要： Disclosed is a method of driving a power converter which can simplify a charging sequence of a charge pump capacitor to reduce the time required to design the device without using a voltage protective circuit and optimum design required to determine the capacitance of the charge pump capacitor. A charging pulse signal for a capacitor (CP) is provided as an input signal from an external control device (EC) substantially simultaneously as a control power source (PS) is switched on to provide a predetermined control power source voltage (V.sub.PS). A driver circuit (DR20) outputs a control signal (V.sub.D) to turn on a transistor (Q2) in a pulse-like manner, starting charging the capacitor (CP). The charging pulse signal continues being provided after completion of the charging of the capacitor (CP) and stops being provided immediately before a PWM signal is provided.
摘要翻译：公开了一种驱动功率转换器的方法，其可以简化电荷泵电容器的充电顺序，以减少设计器件所需的时间，而不使用电压保护电路和确定电荷泵电容器的电容所需的最佳设计。当控制电源（PS）接通时，用于电容器（CP）的充电脉冲信号基本上同时作为来自外部控制装置（EC）的输入信号提供，以提供预定的控制电源电压（VPS）。驱动电路（DR20）以类似脉冲的方式输出控制信号（VD）以接通晶体管（Q2），开始对电容器（CP）充电。在电容器（CP）的充电完成之后继续提供充电脉冲信号，并且在提供PWM信号之前停止提供充电脉冲信号。

28. 发明授权

US5200638A A semiconductor device for extracting a signal used to monitor potential of a high voltage island at a low voltage island and method of manufacturing the same 失效
标题翻译：用于提取用于监视低电压岛屿的高电压电压的信号的半导体器件及其制造方法
公开(公告)号：US5200638A
公开(公告)日：1993-04-06
申请号：US547243
申请日：1990-07-03
申请人： Takeshi Kida , Kazumasa Satsuma , Gourab Majumdar , Tomohide Terashima , Hiroshi Yamaguchi , Masanori Fukunaga , Masao Yoshizawa
发明人： Takeshi Kida , Kazumasa Satsuma , Gourab Majumdar , Tomohide Terashima , Hiroshi Yamaguchi , Masanori Fukunaga , Masao Yoshizawa
IPC分类号： H01L29/73 , H01L21/331 , H01L21/336 , H01L21/66 , H01L29/06 , H01L29/40 , H01L29/732 , H01L29/735 , H01L29/739 , H01L29/745 , H01L29/78 , H01L29/861
CPC分类号： H01L29/404 , H01L29/66681 , H01L29/735 , H01L29/7393 , H01L29/7455 , H01L29/7826 , H01L29/8611
摘要： On the p.sup.- substrate, the n.sup.- epitaxial layer is surrounded and isolated by the p well. In the surface of the n.sup.- epitaxial layer, there is provided the p floating region in the vicinity of the p well, on which the sense electrode is provided. The insulation film and the conductive film are formed on the n.sup.- epitaxial layer between the p well and the p floating region to overlap them. The conductive film and the p floating region serve as a composite field plate, which makes it hard that the surface electric field distribution is influenced by the state of electric charge in the surface and relieves the surface electric field by expanding the depletion layer, which extends from the pn junction between the n.sup.31 epitaxial layer and the p well into the n.sup.- epitaxial layer in current blocking state, toward the center of the n.sup.- epitaxial layer. The potential of the p floating region is determined by capacity coupling in the current blocking state and thus the sense voltage characteristics through the sense electrode can be smooth.

29. 发明授权

US5055721A Drive circuit for IGBT device 失效
标题翻译： IGBT器件驱动电路
公开(公告)号：US5055721A
公开(公告)日：1991-10-08
申请号：US422685
申请日：1989-10-17
申请人： Gourab Majumdar , Shigekazu Yoshida
发明人： Gourab Majumdar , Shigekazu Yoshida
IPC分类号： H03K17/00 , H03K17/082
CPC分类号： H03K17/0828 , H03K2217/0036
摘要： A MOS transistor (Q.sub.M) detects an increase of the collector current (I.sub.C) of an IGBT device (Q.sub.O). When an excess current passes, the transistor (Q.sub.M) turns on, which restricts the gate voltage (V.sub.G) of the IGBT device (Q.sub.O) to decrease the collector current (I.sub.C). This protects the IGBT device (Q.sub.O) from the excess current. A Zener diode (D.sub.Z) placed on a path which is for detecting the excess current of the IGBT device (Q.sub.O) restricts the current passing through the path. This decreases reactive power which is consumed in protecting the device (Q.sub.O) from the excess current while protecting a drive circuit from an erroneous operation.

30. 发明授权

US4902921A Drive circuit for driving cascode bipolar-MOS circuit 失效
标题翻译：驱动电路驱动共源共栅双极MOS电路
公开(公告)号：US4902921A
公开(公告)日：1990-02-20
申请号：US195286
申请日：1988-05-17
申请人： Takahiro Hiramoto , Gourab Majumdar
发明人： Takahiro Hiramoto , Gourab Majumdar
IPC分类号： H03K17/56 , H03K17/04 , H03K17/567 , H03K17/60 , H03K17/615
CPC分类号： H03K17/567 , H03K17/0406 , H03K17/615
摘要： The drive circuit for driving a cascode bipolar MOS circuit (1) has a bipolar transistor (21) coupled to a bipolar transistor (11) in the bipolar MOS circuit (1) through a Darlington connection. A base current for the bipolar transistor (11) is supplied through the other bipolar transistor (21), without a transformer.
摘要翻译：用于驱动级联双极MOS电路（1）的驱动电路具有通过达林顿连接在双极MOS电路（1）中耦合到双极晶体管（11）的双极晶体管（21）。双极晶体管（11）的基极电流通过另一双极晶体管（21）提供，而没有变压器。

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