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    • 21. 发明授权
    • Optical sensing head and method for fabricating the sensing head
    • 光学感测头及其制造方法
    • US07223952B2
    • 2007-05-29
    • US10667717
    • 2003-09-22
    • Ulrich SteegmüllerWolfgang GramannFrank SingerJürgen DachsMathias Kämpf
    • Ulrich SteegmüllerWolfgang GramannFrank SingerJürgen DachsMathias Kämpf
    • G01B7/00
    • G11B7/1263G02B6/4214G11B7/123G11B7/22
    • An optical sensing head, which is for reading out an optical data memory, has a substrate with a main surface. An edge-emitting laser component is configured on the main surface of the substrate and has irradiation axis oriented essentially parallel to the first main plane. A deflection device is arranged on the main surface of the substrate and deflects the laser radiation in a direction that is essentially perpendicular to the main surface. At least one signal detector is provided for sensing the laser radiation that is reflected by the optical data memory. An optical element guides the deflected laser radiation to the optical data memory and guides reflected laser radiation to the signal detector. The optical element is connected to the substrate by at least one supporting element. The invention also includes a method for fabricating such a sensing head.
    • 用于读出光学数据存储器的光学检测头具有具有主表面的基板。 边缘发射激光器部件被构造在基板的主表面上,并具有基本上平行于第一主平面定向的照射轴。 偏转装置设置在基板的主表面上,并使激光辐射沿基本垂直于主表面的方向偏转。 提供至少一个信号检测器用于感测由光学数据存储器反射的激光辐射。 光学元件将偏转的激光辐射引导到光学数据存储器并将反射的激光辐射引导到信号检测器。 光学元件通过至少一个支撑元件连接到基板。 本发明还包括一种用于制造这种感测头的方法。
    • 24. 发明申请
    • Radiation-emitting semiconductor chip, method for production thereof and radiation-emitting component
    • 辐射发射半导体芯片,其制造方法和辐射发射部件
    • US20050017258A1
    • 2005-01-27
    • US10491304
    • 2002-09-27
    • Michael FehrerVolker HarleFrank KuhnUlrich Zehnder
    • Michael FehrerVolker HarleFrank KuhnUlrich Zehnder
    • H01L33/20H01L21/00H01L33/00
    • H01L33/20H01L24/32H01L2224/32245H01L2224/48091H01L2224/48247H01L2224/73265H01L2924/10155H01L2924/12041H01L2924/12042H01L2924/00014H01L2924/00
    • A radiation-emitting semiconductor chip, having a multilayer structure (100) containing a radiation-emitting active layer (10), and having a window layer (20), which is transmissive to a radiation emitted by the active layer (10) and is arranged downstream of the multilayer structure (100) in the direction of a main radiating direction of the semiconductor component. The window layer (20) has at least one peripheral side area (21), which, in the course from a first main area (22) facing the multilayer structure (100) in the direction toward a second main area (23) remote from the multilayer structure (100), firstly has a first side area region (24) which is beveled, curved or stepped in such a way that the window layer widens with respect to the size of the first main area (22). A peripheral side area (11) of the multilayer structure (100) and at least a part of the beveled, curved or stepped first side area region (24) are coated with a continuous electrically insulating layer (30). A radiation-emitting component is disclosed having a chip of this type, and also disclosed is a method for simultaneously producing a multiplicity of such chips.
    • 一种辐射发射半导体芯片,其具有包含发射有机层(10)的多层结构(100),并且具有透过所述有源层(10)发射的辐射的窗口层(20),并且是窗口层 布置在所述多层结构(100)的所述半导体部件的主辐射方向的方向上。 所述窗口层(20)具有至少一个外围侧区域(21),所述至少一个周边区域沿着朝向远离所述多层结构(100)的第二主区域(23)的方向从所述多层结构(100)的第一主区域(22) 多层结构(100)首先具有斜面,弯曲或阶梯状的第一侧面区域(24),使得窗口层相对于第一主区域(22)的尺寸变宽。 所述多层结构(100)的外围侧区域(11)和所述倾斜的,弯曲的或阶梯状的第一侧区域区域(24)的至少一部分被涂覆有连续的电绝缘层(30)。 公开了具有这种类型的芯片的辐射发射部件,并且还公开了一种用于同时产生多个这种芯片的方法。