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1. 发明授权

US07446344B2 Radiation-emitting semiconductor chip, method for production thereof and radiation-emitting component 有权
标题翻译：辐射发射半导体芯片，其制造方法和辐射发射部件
公开(公告)号：US07446344B2
公开(公告)日：2008-11-04
申请号：US10491304
申请日：2002-09-27
申请人： Michael Fehrer , Volker Harle , Frank Kuhn , Ulrich Zehnder
发明人： Michael Fehrer , Volker Harle , Frank Kuhn , Ulrich Zehnder
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L24/32 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/10155 , H01L2924/12041 , H01L2924/12042 , H01L2924/00014 , H01L2924/00
摘要： A radiation-emitting semiconductor chip, having a multilayer structure (100) containing a radiation-emitting active layer (10), and having a window layer (20), which is transmissive to a radiation emitted by the active layer (10) and is arranged downstream of the multilayer structure (100) in the direction of a main radiating direction of the semiconductor component. The window layer (20) has at least one peripheral side area (21), which, in the course from a first main area (22) facing the multilayer structure (100) in the direction toward a second main area (23) remote from the multilayer structure (100), firstly has a first side area region (24) which is beveled, curved or stepped in such a way that the window layer widens with respect to the size of the first main area (22). A peripheral side area (11) of the multilayer structure (100) and at least a part of the beveled, curved or stepped first side area region (24) are coated with a continuous electrically insulating layer (30). A radiation-emitting component is disclosed having a chip of this type, and also disclosed is a method for simultaneously producing a multiplicity of such chips.
摘要翻译：一种辐射发射半导体芯片，其具有包含发射有机层（10）的多层结构（100），并且具有透过所述有源层（10）发射的辐射的窗口层（20），并且是窗口层布置在所述多层结构（100）的所述半导体部件的主辐射方向的方向上。所述窗口层（20）具有至少一个外围侧区域（21），所述至少一个周边区域沿着朝向远离所述多层结构（100）的第二主区域（23）的方向从所述多层结构（100）的第一主区域（22）多层结构（100）首先具有斜面，弯曲或阶梯状的第一侧面区域（24），使得窗口层相对于第一主区域（22）的尺寸变宽。所述多层结构（100）的外围侧区域（11）和所述倾斜的，弯曲的或阶梯状的第一侧区域区域（24）的至少一部分被涂覆有连续的电绝缘层（30）。公开了具有这种类型的芯片的辐射发射部件，并且还公开了一种用于同时产生多个这种芯片的方法。

2. 发明申请

US20050017258A1 Radiation-emitting semiconductor chip, method for production thereof and radiation-emitting component 有权
标题翻译：辐射发射半导体芯片，其制造方法和辐射发射部件
公开(公告)号：US20050017258A1
公开(公告)日：2005-01-27
申请号：US10491304
申请日：2002-09-27
申请人： Michael Fehrer , Volker Harle , Frank Kuhn , Ulrich Zehnder
发明人： Michael Fehrer , Volker Harle , Frank Kuhn , Ulrich Zehnder
IPC分类号： H01L33/20 , H01L21/00 , H01L33/00
CPC分类号： H01L33/20 , H01L24/32 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/10155 , H01L2924/12041 , H01L2924/12042 , H01L2924/00014 , H01L2924/00
摘要： A radiation-emitting semiconductor chip, having a multilayer structure (100) containing a radiation-emitting active layer (10), and having a window layer (20), which is transmissive to a radiation emitted by the active layer (10) and is arranged downstream of the multilayer structure (100) in the direction of a main radiating direction of the semiconductor component. The window layer (20) has at least one peripheral side area (21), which, in the course from a first main area (22) facing the multilayer structure (100) in the direction toward a second main area (23) remote from the multilayer structure (100), firstly has a first side area region (24) which is beveled, curved or stepped in such a way that the window layer widens with respect to the size of the first main area (22). A peripheral side area (11) of the multilayer structure (100) and at least a part of the beveled, curved or stepped first side area region (24) are coated with a continuous electrically insulating layer (30). A radiation-emitting component is disclosed having a chip of this type, and also disclosed is a method for simultaneously producing a multiplicity of such chips.
摘要翻译：一种辐射发射半导体芯片，其具有包含发射有机层（10）的多层结构（100），并且具有透过所述有源层（10）发射的辐射的窗口层（20），并且是窗口层布置在所述多层结构（100）的所述半导体部件的主辐射方向的方向上。所述窗口层（20）具有至少一个外围侧区域（21），所述至少一个周边区域沿着朝向远离所述多层结构（100）的第二主区域（23）的方向从所述多层结构（100）的第一主区域（22）多层结构（100）首先具有斜面，弯曲或阶梯状的第一侧面区域（24），使得窗口层相对于第一主区域（22）的尺寸变宽。所述多层结构（100）的外围侧区域（11）和所述倾斜的，弯曲的或阶梯状的第一侧区域区域（24）的至少一部分被涂覆有连续的电绝缘层（30）。公开了具有这种类型的芯片的辐射发射部件，并且还公开了一种用于同时产生多个这种芯片的方法。

3. 发明申请

US20080179380A1 RADIATION-EMITTING SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING THE SEMICONDUCTOR COMPONENT 有权
标题翻译：辐射发射半导体元件和用于制造半导体元件的方法
公开(公告)号：US20080179380A1
公开(公告)日：2008-07-31
申请号：US11567977
申请日：2006-12-07
申请人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Harle , Marianne Ortmann , Uwe Strauss , Johannes Volkl , Ulrich Zehnder
发明人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Harle , Marianne Ortmann , Uwe Strauss , Johannes Volkl , Ulrich Zehnder
IPC分类号： A47J36/02
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/02 , H01L2224/48091 , H01L2224/48463 , H01L2224/73265 , H01L2924/10155 , H01L2924/00014
摘要： A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.
摘要翻译：辐射发射半导体组件具有改进的辐射效率。半导体部件具有多层结构，其具有用于在多层结构内产生辐射的有源层，以及具有第一和第二主表面的窗口。多层结构邻接窗口的第一主表面。为了提高辐射效率，至少一个凹槽（例如沟槽或凹坑）从第二主表面形成在窗口中。凹部优选地具有朝向第一主表面渐缩的梯形横截面，并且可以例如通过锯入窗口来制造。

4. 发明授权

US06891199B2 Radiation-emitting semiconductor chip and light-emitting diode 有权
标题翻译：辐射发射半导体芯片和发光二极管
公开(公告)号：US06891199B2
公开(公告)日：2005-05-10
申请号：US10343851
申请日：2001-07-24
申请人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Harle , Ulrich Jacob , Werner Plass , Uwe Strauss , Johannes Völkl , Ulrich Zehnder
发明人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Volker Harle , Ulrich Jacob , Werner Plass , Uwe Strauss , Johannes Völkl , Ulrich Zehnder
IPC分类号： H01L33/20 , H01L33/24 , H01L29/16
CPC分类号： H01L33/20 , H01L33/24 , H01L2224/48091 , H01L2924/00014
摘要： Proposed for high-performance light-emitting diodes are semiconductor chips (1) whose longitudinal sides are substantially longer than their transverse sides. Light extraction can be substantially improved in this manner.
摘要翻译：用于高性能发光二极管的半导体芯片（1）的纵向边比其横向侧面大得多。以这种方式可以显着改善光提取。

5. 发明申请

US20070145402A1 SEMICONDUCTOR COMPONENT WHICH EMITS RADIATION, AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：其辐射的半导体元件及其制造方法
公开(公告)号：US20070145402A1
公开(公告)日：2007-06-28
申请号：US11684347
申请日：2007-03-09
申请人： Dominik Eisert , Volker Harle , Frank Kuhn , Manfred Mundbrod-Vangerow , Uwe Strauss , Jacob Ulrich , Ernst Nirschl , Norbert Linder , Reinhard Sedlmeier , Ulrich Zehnder , Johannes Baur
发明人： Dominik Eisert , Volker Harle , Frank Kuhn , Manfred Mundbrod-Vangerow , Uwe Strauss , Jacob Ulrich , Ernst Nirschl , Norbert Linder , Reinhard Sedlmeier , Ulrich Zehnder , Johannes Baur
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L21/32139 , H01L33/0079 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/42 , H01L33/46
摘要： This invention describes a radiation-emitting semiconductor component with the a multilayered structure that contains a radiation-emitting active layer, and a window transparent to radiation that has a first principal face and a second principal face opposite the first principal face, and whose first principal face adjoins the multilayered structure. At least one recess is made in the window, which preferably has the form of an indentation of the second principal face or as an edge excavation. At least one lateral surface of the window or of the recess is provided at least partially with a contact surface. Alternatively or cumulatively, at least one contact surface of the component has a plurality of openings.
摘要翻译：本发明描述了一种具有多层结构的辐射发射半导体部件，该多层结构包含发射有辐射的活性层和对辐射透明的窗口，该窗口具有与第一主面相对的第一主面和第二主面，并且其第一主体面临着多层结构。在窗口中至少形成一个凹槽，其优选地具有第二主面的凹陷的形式或者作为边缘挖掘。窗口或凹部的至少一个侧表面至少部分地设置有接触表面。或者或累积地，部件的至少一个接触表面具有多个开口。

6. 发明申请

US20050042843A1 Method for producing a radiation-emitting semiconductor chip 有权
公开(公告)号：US20050042843A1
公开(公告)日：2005-02-24
申请号：US10949915
申请日：2004-09-24
申请人： Dominik Eisert , Volker Harle , Frank Kuhn , Ulrich Zehnder
发明人： Dominik Eisert , Volker Harle , Frank Kuhn , Ulrich Zehnder
IPC分类号： H01L33/20 , H01L29/76
CPC分类号： H01L33/20
摘要： A semiconductor chip has a substrate that is in the form of a parallelepiped whose side surfaces are shaped as tilted parallelograms. Such a semiconductor chip has a high output efficiency and a homogeneous thermal load due to having at least two side surfaces that are provided with an acute angle and are in the form of parallelograms.

7. 发明申请

US20050116216A1 Optical semiconductor device with multiple quantum well structure 有权
标题翻译：具有多量子阱结构的光半导体器件
公开(公告)号：US20050116216A1
公开(公告)日：2005-06-02
申请号：US11014677
申请日：2004-12-16
申请人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
发明人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
IPC分类号： H01L33/06 , H01L33/32 , H01S5/34 , H01S5/343 , H01L29/06
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.
摘要翻译：具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于氮化物半导体材料的第一组合物的器件阱层（6a）具有第一提供具有与第一电子能量相比较高的电子能量的氮化物半导体材料的第二组合物的电子能量和阻挡层（6b），然后在生长方向上通过辐射活性量子阱层（6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。

8. 发明授权

US06849881B1 Optical semiconductor device comprising a multiple quantum well structure 有权
标题翻译：包括多量子阱结构的光学半导体器件
公开(公告)号：US06849881B1
公开(公告)日：2005-02-01
申请号：US09913394
申请日：2000-11-20
申请人： Volker Harle , Berthold Hahn , Hans-Jürgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Völkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
发明人： Volker Harle , Berthold Hahn , Hans-Jürgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Völkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
IPC分类号： H01L33/06 , H01L33/32 , H01S5/34 , H01S5/343 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L32/26
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： An optical semiconductor device with a multiple quantum well structure, is set out in which well layers and barrier layers, comprising various types of semiconductor layers, are alternately layered. The device well layers comprise a first composition based on a nitride semiconductor material with a first electron energy. The barrier layers comprise a second composition of a nitride semiconductor material with electron energy which is higher in comparison to the first electron energy. The well and barrier layers are in the direction of growth, by a radiation-active quatum well layer which with the essentially non-radiating well layers (6a) and the barrier layers (6b), arranged in front, form a supperlattice.
摘要翻译：提出了具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和势垒层交替层叠。器件阱层包括基于具有第一电子能的氮化物半导体材料的第一组合物。阻挡层包括氮化物半导体材料的第二组合物，其电子能量与第一电子能量相比较高。井和阻挡层沿生长方向通过辐射活性层的井层，其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。

9. 发明授权

US07106090B2 Optical semiconductor device with multiple quantum well structure 有权
标题翻译：具有多量子阱结构的光半导体器件
公开(公告)号：US07106090B2
公开(公告)日：2006-09-12
申请号：US11014677
申请日：2004-12-16
申请人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
发明人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
IPC分类号： G01R31/00 , G01R31/26 , G01R31/28
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.
摘要翻译：具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于氮化物半导体材料的第一组合物的器件阱层（6a）具有第一提供具有与第一电子能量相比较高的电子能量的氮化物半导体材料的第二组合物的电子能量和阻挡层（6b），然后在生长方向上通过辐射活性量子阱层（6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。

10. 发明申请

US20060289854A1 OPTICAL SEMICONDUCTOR DEVICE WITH MULTIPLE QUANTUM WELL STRUCTURE 有权
标题翻译：具有多个量子阱结构的光学半导体器件
公开(公告)号：US20060289854A1
公开(公告)日：2006-12-28
申请号：US11463633
申请日：2006-08-10
申请人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
发明人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
IPC分类号： H01L31/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.
摘要翻译：具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于氮化物半导体材料的第一组合物的器件阱层（6a）具有第一提供具有与第一电子能量相比较高的电子能量的氮化物半导体材料的第二组合物的电子能量和阻挡层（6b），然后在生长方向上通过辐射活性量子阱层（6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。

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