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1. 发明授权

US07262441B2 Laminates for encapsulating devices 有权
标题翻译：用于封装装置的层压板
公开(公告)号：US07262441B2
公开(公告)日：2007-08-28
申请号：US11171826
申请日：2005-06-29
申请人： Ewald Karl Michael Guenther , Wei Wang , Soo Jin Chua
发明人： Ewald Karl Michael Guenther , Wei Wang , Soo Jin Chua
IPC分类号： H01L29/21
CPC分类号： H01L51/524 , H01L51/5246 , H01L51/525 , H01L51/5253 , H01L2251/5338
摘要： An encapsulation for an electrical device is disclosed. The encapsulation comprises plastic substrates which are laminated onto the surface of the electrical device. The use of laminated plastics is particularly useful for flexible electrical devices such as organic LEDs.
摘要翻译：公开了一种用于电气设备的封装。封装包括层压在电气设备表面上的塑料基板。层压塑料的使用对于诸如有机LED的柔性电气装置特别有用。

2. 发明授权

US06949825B1 Laminates for encapsulating devices 有权
标题翻译：用于封装装置的层压板
公开(公告)号：US06949825B1
公开(公告)日：2005-09-27
申请号：US09786833
申请日：1999-07-09
申请人： Ewald Karl Michael Guenther , Wei Wang , Soo Jin Chua
发明人： Ewald Karl Michael Guenther , Wei Wang , Soo Jin Chua
IPC分类号： H01L23/29 , H01L21/56 , H01L23/02 , H01L23/31 , H01L27/32 , H01L29/24 , H01L51/52 , H05K5/02 , H05K5/06 , H01L23/34
CPC分类号： H01L51/524 , H01L51/5246 , H01L51/525 , H01L51/5253 , H01L2251/5338
摘要： An encapsulation for an electrical device is disclosed. The encapsulation comprises plastic substrates which are laminated onto the surface of the electrical device. The use of laminated plastics is particularly useful for flexible electrical devices such as organic LEDs.
摘要翻译：公开了一种用于电气设备的封装。封装包括层压在电气设备表面上的塑料基板。层压塑料的使用对于诸如有机LED的柔性电气装置特别有用。

3. 发明授权

US07098591B1 Transparent electrode material for quality enhancement of OLED devices 有权
标题翻译：用于OLED器件质量增强的透明电极材料
公开(公告)号：US07098591B1
公开(公告)日：2006-08-29
申请号：US10168249
申请日：1999-12-17
申请人： Furong Zhu , Ewald Karl Michael Guenther , Soo Jin Chua
发明人： Furong Zhu , Ewald Karl Michael Guenther , Soo Jin Chua
IPC分类号： H05B33/00
CPC分类号： H01L51/5206 , H01L2251/55
摘要： A transparent conductive material in which the desired resistivity is achieved with a high carrier concentration is provided for use in an OLED. In one embodiment, the transparent conductive material comprises indium-tin-oxide. (ITO) with a high carrier concentration of at least at least 7×1020 cm−3. The high carrier concentration improved the performance of the OLED device.
摘要翻译：提供其中以高载流子浓度实现所需电阻率的透明导电材料用于OLED中。在一个实施例中，透明导电材料包括氧化铟锡。（ITO），其具有至少7×10 20 cm -3以上的高载流子浓度。高载流子浓度改善了OLED器件的性能。

4. 发明授权

US06692610B2 Oled packaging 有权
标题翻译： Oled包装
公开(公告)号：US06692610B2
公开(公告)日：2004-02-17
申请号：US09915803
申请日：2001-07-26
申请人： Hong Yee Low , Soo Jin Chua , Ewald Karl Michael Guenther
发明人： Hong Yee Low , Soo Jin Chua , Ewald Karl Michael Guenther
IPC分类号： B32B3128
CPC分类号： H01L51/5246 , H01L21/50 , H01L23/10 , H01L2924/0002 , Y10T156/109 , H01L2924/00
摘要： An improved method of fabricating a device such as OLED is disclosed. The method includes applying an adhesive on a cap or substrate. The adhesive is partially cured to initiate the cross-linking process while remaining in the liquid phase. The cap is then mounted onto the substrate and the adhesive is cured to encapsulate the device. By partially curing the adhesive prior to mounting the cap, the curing of the adhesive can be achieved without prolonged exposure to UV radiation or high temperatures which can adversely impact the device.
摘要翻译：公开了一种制造诸如OLED的器件的改进方法。该方法包括在盖或基底上施加粘合剂。粘合剂被部分固化以在残留在液相中引发交联过程。然后将盖安装到基底上，并将粘合剂固化以封装该装置。通过在安装盖之前部分固化粘合剂，可以实现粘合剂的固化，而不会持续暴露于可能不利地影响装置的UV辐射或高温。

5. 发明授权

US08603825B2 Sensor for measuring gas permeability of a test material 有权
标题翻译：用于测量测试材料的透气度的传感器
公开(公告)号：US08603825B2
公开(公告)日：2013-12-10
申请号：US10594789
申请日：2004-03-31
申请人： Soo Jin Chua , Senthil Kumar Ramadas , Xinbo He
发明人： Soo Jin Chua , Senthil Kumar Ramadas , Xinbo He
IPC分类号： G01N15/08 , B01J19/00
CPC分类号： G01N15/0826 , G01N27/121
摘要： A sensor for measuring gas permeability of a test material, comprising: an electrically conductive sensing element that comprises a water and/or oxygen sensitive material, wherein the reaction of said material with water or oxygen when the sensing element is contacted with water and/or oxygen results in a change in the electrical conductivity of the sensing element, and two electrodes electrically connected to the sensing element.
摘要翻译：一种用于测量测试材料的透气性的传感器，包括：导电感测元件，其包括水和/或氧敏感材料，其中当感测元件与水接触时，所述材料与水或氧的反应和/或氧导致感测元件的电导率的变化，以及电连接到感测元件的两个电极。

6. 发明授权

US08211321B2 Method for fabricating micro and nano structures 失效
标题翻译：制造微结构和纳米结构的方法
公开(公告)号：US08211321B2
公开(公告)日：2012-07-03
申请号：US12938973
申请日：2010-11-03
申请人： Benzhong Wang , Soo Jin Chua
发明人： Benzhong Wang , Soo Jin Chua
IPC分类号： B29D11/00
CPC分类号： B29D11/00365 , B82Y20/00 , B82Y30/00 , G02B3/0012 , G02B3/0056 , Y10S977/888 , Y10T428/24165 , Y10T428/24893 , Y10T428/24909
摘要： A method of forming an array of selectively shaped optical elements on a substrate, the method including the steps of providing the substrate, the substrate having an optical layer placed thereon; placing a layer of particles on the optical layer; performing an etching cycle. The cycle includes the steps of: etching the layer of particles, using a first etching process so as to reduce the size of the particles within the layer, then; simultaneously etching the optical layer and the layer of particles, using a second etching process, the further reducing particles forming a mask over areas of the optical layer to create discrete optical elements from the optical layer.
摘要翻译：一种在衬底上形成选择性地成形的光学元件的阵列的方法，所述方法包括以下步骤：提供衬底，所述衬底具有放置在其上的光学层; 在光学层上放置一层颗粒; 执行蚀刻循环。该循环包括以下步骤：使用第一蚀刻工艺蚀刻颗粒层，以减小层内的颗粒的尺寸，然后; 使用第二蚀刻工艺同时蚀刻光学层和颗粒层，在光学层的区域上形成进一步的还原颗粒形成掩模以从光学层产生离散的光学元件。

7. 发明授权

US07910937B2 Method and structure for fabricating III-V nitride layers on silicon substrates 失效
标题翻译：在硅衬底上制造III-V族氮化物层的方法和结构
公开(公告)号：US07910937B2
公开(公告)日：2011-03-22
申请号：US11344472
申请日：2006-02-01
申请人： Peng Chen , Soo Jin Chua , Zhonglin Miao , Sudhiranjan Tripathy
发明人： Peng Chen , Soo Jin Chua , Zhonglin Miao , Sudhiranjan Tripathy
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01L21/02381 , H01L21/02458 , H01L21/02491 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/007 , H01L33/04
摘要： A method and structure for fabricating III-V nitride layers on silicon substrates includes a substrate, a transition structure having AlGaN, AlN and GaN layers, and a superlattice structure having AlGaN and GaN layers. In the invention, the large lattice mismatch (17%) between GaN and silicon is solved by using AlN as the first buffer layer with a 5:4 coincidence between AlN(0001) and Si(111) lattice to reduce the lattice mismatch to 1.3%.
摘要翻译：用于在硅衬底上制造III-V族氮化物层的方法和结构包括衬底，具有AlGaN，AlN和GaN层的过渡结构，以及具有AlGaN和GaN层的超晶格结构。在本发明中，通过使用AlN作为第一缓冲层，在AlN（0001）和Si（111）晶格之间具有5:4的一致性来解决GaN和硅之间的大晶格失配（17％），以将晶格失配减小到1.3 ％。

8. 发明授权

US07419842B2 Encapsulation of electroluminescent devices with shaped spacers 失效
标题翻译：具有成型间隔物的电致发光器件的封装
公开(公告)号：US07419842B2
公开(公告)日：2008-09-02
申请号：US11674098
申请日：2007-02-12
申请人： Mark Auch , Ewald Guenther , Soo Jin Chua
发明人： Mark Auch , Ewald Guenther , Soo Jin Chua
IPC分类号： H01L21/00
CPC分类号： H01L51/525 , H01L27/3241 , H01L33/483 , H01L51/5246
摘要： A method of encapsulating a device is disclosed. Spacer particles are randomly located in a device region to prevent a cap mounted on the substrate from contacting the active components when pressure is applied to the cap, thereby protecting the active components from damage. The spacer particles comprise a base and an upper portion, the base being at least equal to or wider than the upper portion.
摘要翻译：公开了封装装置的方法。间隔物颗粒随机地位于装置区域中，以防止当将压力施加到盖子上时，安装在基板上的盖子与活性组分接触，从而保护活性成分免受损坏。间隔物颗粒包括基部和上部，基部至少等于或大于上部。

9. 发明授权

US07223623B2 Method for forming a modified semiconductor having a plurality of band gaps 失效
标题翻译：用于形成具有多个带隙的改性半导体的方法
公开(公告)号：US07223623B2
公开(公告)日：2007-05-29
申请号：US10510357
申请日：2003-04-04
申请人： Jing Hua Teng , Soo Jin Chua , Jian Rong Dong
发明人： Jing Hua Teng , Soo Jin Chua , Jian Rong Dong
IPC分类号： H01L21/00
CPC分类号： B82Y10/00 , B82Y20/00 , H01L21/182 , H01L29/122 , H01L29/125 , H01L29/127 , H01L33/0095 , H01S5/1003 , H01S5/1092 , H01S5/162 , H01S5/3412 , H01S5/3414 , H01S5/4087
摘要： A method for forming a modified semiconductor having a number of band gaps involves providing a semiconductor having a surface and a quantum region which emits photons in response to electrical or optical stimulation, the quantum region having an original band gap and being disposed under the surface and applying a number of layers of a number of materials to a number of selected regions of the surface, the materials being adapted to cause, upon thermal annealing, a number of different degrees of intermixing in a number of portions of the quantum region disposed immediately below each of the selected regions of the surface. The layers of materials can be applied in a dot or line pattern, or both, to increase the plurality of band gap tuning. The method includes thermally annealing the layers to the surface. The methods result in a modified semiconductor which exhibits a number of different band gaps in a number of portions of the quantum region depending upon the positioning of the layers of materials on the surface immediately above the respective portions of the quantum region.
摘要翻译：用于形成具有多个带隙的修改的半导体的方法涉及提供具有表面的半导体和响应于电或光刺激而发射光子的量子区域，该量子区域具有原始带隙并设置在该表面下方，将多个材料层施加到表面的多个选定区域，该材料适于在热退火时引起在紧邻下面布置的量子区域的多个部分中的多个不同程度的混合每个表面的选定区域。可以以点或线图案或两者来施加材料层以增加多个带隙调谐。该方法包括将层热层退火到表面。该方法产生一种修饰的半导体，其取决于材料层在量子区的相应部分上方的表面上的位置，在量子区的多个部分中表现出许多不同的带隙。

10. 发明授权

US06887972B2 Blue electroluminescent materials for polymer light-emitting diodes 失效
标题翻译：用于高分子发光二极管的蓝色电致发光材料
公开(公告)号：US06887972B2
公开(公告)日：2005-05-03
申请号：US09841705
申请日：2001-04-24
申请人： Wei Huang , Wang Lin Yu , Jian Pei , Soo Jin Chua
发明人： Wei Huang , Wang Lin Yu , Jian Pei , Soo Jin Chua
IPC分类号： H01L51/30 , H01L51/50 , C08G73/00
CPC分类号： H01L51/0039 , H01L51/0035 , H01L51/0043 , H01L51/5012 , Y10S428/917
摘要： A polymeric material comprising alternate substituted fluorene and phenylene units, as represented by the following formula wherein R1, R2, R3 and R4, which may be identical or different, are each selected from the group consisting of H, a (C1-C22) linear or branched alkyl, alkoxy or oligo (oxyetylene) group, a (C6-C30) cycloalkyl group, and an unsubstituted or substituted aryl group, and n is from about 3 to about 5000.
摘要翻译：包含交替取代的芴和亚苯基单元的聚合物材料，如下式所示：其中R 1，R 2，R 3和R 3，其可以相同或不同，各自选自H，直链或支链的H（C 1 -C 12 -C 22）烷基，烷氧基或低聚（亚乙烯基），（C 6 -C 30）环烷基和未取代或取代的芳基，n为约3〜约5000。

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