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11. 发明授权

US4162184A Producing layered penta-ultraphosphate monocrystals 失效
标题翻译：生产层状五磷酸盐单晶
公开(公告)号：US4162184A
公开(公告)日：1979-07-24
申请号：US821782
申请日：1977-08-04
申请人： Wolfgang Kruehler , Rolf Plaettner
发明人： Wolfgang Kruehler , Rolf Plaettner
IPC分类号： H01S3/05 , H01S3/06 , H01S3/16 , B01J17/06
CPC分类号： H01S3/1688
摘要： Monocrystalline substrates of gadolinium yttrium penta-ultraphosphate are coated with an epitaxial layer of neodymium yttrium penta-ultraphosphate to produce a wave guiding, laser active, solid state devices. The preparation procedure involves heating a solution of neodymium oxide and yttrium oxide in phosphoric acid to about 500.degree. C. with holding points being interposed at about 180.degree. C. and at about 370.degree. C. After the solution has been held at 500.degree. C. for about 12 through 15 hours, a preformed substrate monocrystal of gadolinium yttrium penta-ultraphosphate is introduced thereinto and a layer of monocrystalline neodymium yttrium penta-ultraphosphate is grown thereon.
摘要翻译：钬钇超磷酸钇的单晶衬底涂覆有钕钇五磷酸超外延层，以产生波导，激光活性固态器件。制备方法包括将氧化钕和氧化钇在磷酸中的溶液加热至约500℃，保持点在约180℃和约370℃下放置。将溶液保持在500℃ 在约12至15小时内，引入五硼酸钇超磷酸盐的预制基材单晶，并在其上生长一层单晶钕五钠超磷酸盐层。

12. 发明授权

US4046617A Method of crystallization 失效
标题翻译：结晶方法
公开(公告)号：US4046617A
公开(公告)日：1977-09-06
申请号：US610801
申请日：1975-09-05
申请人： James C. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Fletcher , Hans U. Walter , Robert S. Snyder
发明人： James C. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Fletcher , Hans U. Walter , Robert S. Snyder
IPC分类号： C30B11/00 , C30B30/08 , B01J17/06 , B01J17/10
CPC分类号： C30B11/00 , C30B30/08 , Y10S117/901
摘要： The method of refining, or growing, bulk single crystals in which the base material is suspended, positioned, and shaped as a containerless melt by wetting forces in an environment substantially free of gravity.

13. 发明授权

US3956718A Crystals having zero temperature coefficients of delay 失效
标题翻译：具有零温度系数延迟的晶体
公开(公告)号：US3956718A
公开(公告)日：1976-05-11
申请号：US540194
申请日：1975-01-10
申请人： Robert W. Weinert , Thelma J. Isaacs
发明人： Robert W. Weinert , Thelma J. Isaacs
IPC分类号： H03H9/30 , B01J17/06 , H01L41/18
CPC分类号： H03H9/02543
摘要： Crystals or Tl.sub.3 VS.sub.4, Tl.sub.3 VSe.sub.4, Tl.sub.3 NbS.sub.4, Tl.sub.3 NbSe.sub.4, Tl.sub.3 TaS.sub.4, and Tl.sub.3 TaSe.sub.4 are disclosed which have a surface containing of normal to a zero temperature coefficient of delay direction. The crystals are used to transmit acoustic waves in surface and bulk wave devices.
摘要翻译：公开了具有垂直于零温度系数的延迟方向的表面的晶体或Tl3VS4，T13VSe4，T13NbS4，T13NbSe4，T13Ta4和T13Teta4。晶体用于在表面和体波器件中传输声波。

14. 发明授权

US3933573A Aluminum nitride single crystal growth from a molten mixture with calcium nitride 失效
标题翻译：硝酸铝单晶生长与硝酸钙的混合物
公开(公告)号：US3933573A
公开(公告)日：1976-01-20
申请号：US563008
申请日：1975-03-27
申请人： Cortland O. Dugger
发明人： Cortland O. Dugger
IPC分类号： C30B9/00 , C01F7/00 , B01J17/06
CPC分类号： C30B9/00 , C30B29/403
摘要： A method for growing single crystals which utilizes calcium nitride as a solvent system in the molten solution growth of bulk aluminum nitride crystals.

15. 发明授权

US3494804A Method for growing crystals 失效
公开(公告)号：US3494804A
公开(公告)日：1970-02-10
申请号：US3494804D
申请日：1968-07-15
申请人： AIR REDUCTION
发明人： HANKS CHARLES W , HUNT CHARLES D A
IPC分类号： C30B15/16 , B01J17/06
CPC分类号： C30B15/16 , Y10S117/905

16. 发明授权

US4116752A Production of single crystalline ferrite particles 失效
标题翻译：生产单晶铁素体颗粒
公开(公告)号：US4116752A
公开(公告)日：1978-09-26
申请号：US472740
申请日：1974-05-23
申请人： Seiji Matsumoto , Kiyoshi Fukai
发明人： Seiji Matsumoto , Kiyoshi Fukai
IPC分类号： C01G49/00 , C30B9/00 , H01F1/11 , B01J17/06 , C01F11/00 , C01G49/02
CPC分类号： C30B29/22 , C30B9/00
摘要： Single crystalline, ferrite particles are obtained by the thermal reaction of ferric oxyhydroxide, ferric hydroxide, porous ferric oxide made therefrom or ferric oxide having a particle size less than 0.8.mu. with a strontium or barium compound such as the oxide, hydroxide, the carbonate or the carboxylate in the presence of a small amount of a metal chloride flux such as strontium chloride or barium chloride.The resulting particles have a well-defined, hexagonal plate configuration and are particularly adapted for the production of anisotropic magnets.
摘要翻译：通过热氧化氢氧化物，氢氧化铁，由其制成的多孔氧化铁或粒度小于0.8μm的氧化铁与锶或钡化合物如氧化物，氢氧化物，碳酸盐或碳酸氢盐的热反应获得单晶铁素体颗粒。羧酸盐在少量金属氯化物助熔剂如氯化锶或氯化钡的存在下进行。

17. 发明授权

US4055457A Method for growing absorption-free alkali metal halide single crystals 失效
标题翻译：生长无吸收的碱金属卤化物单晶的方法
公开(公告)号：US4055457A
公开(公告)日：1977-10-25
申请号：US716051
申请日：1976-08-20
申请人： Carl F. Swinehart
发明人： Carl F. Swinehart
IPC分类号： C30B11/00 , C30B17/00 , B01J17/06 , B01J17/08 , C01D3/04 , C01D3/10
CPC分类号： C30B17/00 , C30B11/00 , C30B29/12
摘要： Large ultra-pure, prism-quality essentially single crystal boules and ingots of alkali metal chlorides and alkali metal bromides are grown by the methods of Kyropoulos and Stockbarger. Optically single crystals of these alkali metal halides are clear optical bodies free of haze throughout. A typical Kyropoulos grown boule of KBr of this invention is also absorption-free, and has cleavage or crystallographic planes which deviate from parallel by 1.degree. to 3.degree. per inch. By `absorption-free` is meant freedom of absorption at 7.2 microns (.mu.) due to nitrate, at 9.5-11 .mu. due to silicate, and at between 8 and 9 .mu. due to sulfate, which are the most difficult to control but as the term implies the bodies are also free of infrared absorption for impurities such as CO.sub.3.sup.-2, PO.sub.4.sup.-3, OH.sup.-, BO.sub.2.sup.-, SH.sup.-, CNO.sup.-, HCO.sub.3.sup.-, etc., which are easily avoided by use of good commercially available growth stock.A particular process for growth for either of the foregoing methods in a silica or quartz crucible, comprises growing an ultrapure ingot of KBr from a relatively impure melt containing silicate, sulfate, nitrate and nitrite ions, and includes maintaining the sodium content of the melt during growth to less than about 20 ppm (parts per million) and the barium content less than 10 ppm, adding barium bromide to the melt if necessary, and, contacting the melt with a trace of free bromine in a covered, but not air-tight, pot.
摘要翻译：通过Kyropoulos和Stockbarger的方法生长大型超纯，棱柱质量的碱性金属氯化物和碱金属溴化物。这些碱金属卤化物的光学单晶是透明的光学体。本发明的KBr的典型的Kyropoulos生长的棒也是无吸收的，并且具有相对于每平方英寸1°至3°的切割或结晶平面。 “无吸收”是指由于硝酸盐在7.2微米（μm）下的吸收自由度，由于硅酸盐而在9.5-11微米处，并且由于硫酸盐而在8至9微米之间，这是最难控制的，但是作为该术语意味着物体对于诸如CO 3 -2，PO 4 -3，OH-，BO 2 - ，SH-，CNO-，HCO 3 - 等杂质也没有红外吸收，这些容易通过使用商业上很好地避免可用成长股。

18. 发明授权

US4040894A Process of preparing crystals of compounds and alloys 失效
标题翻译：制备化合物和合金晶体的方法
公开(公告)号：US4040894A
公开(公告)日：1977-08-09
申请号：US527688
申请日：1974-11-27
申请人： Huguette Fumeron Rodot , Maurice Schneider , Arnost Hruby
发明人： Huguette Fumeron Rodot , Maurice Schneider , Arnost Hruby
IPC分类号： C01B25/06 , C30B11/00 , C30B11/06 , C30B11/10 , B01J17/06
CPC分类号： C30B11/10 , C01B25/06 , C30B11/00 , C30B11/003 , C30B11/06 , C30B29/10 , C30B29/52
摘要： A liquid phase, which comprises either at least one of the constituents of the compound or alloy of which the crystal is to be prepared, or a foreign material, is fed continuously at its surface with the other constituent or constituents of this compound or alloy (or with all the constituents when the liquid phase comprises a foreign material). This liquid phase is subjected to two successive temperature gradients the first of which is slight and the second steep, so that the constituents are transported through the liquid phase and so that the crystallization of the compound or alloy takes place at the level of the second gradient. The liquid phase and the temperature gradients are displaced with respect to each other at a speed determined such that the composition of the liquid phase does not change and such that the crystallization always takes place at the same temperature.
摘要翻译：包含要制备晶体的化合物或合金的成分中的至少一种或异物的液相在其表面上与该化合物或合金的其它成分或成分连续供给（或当液相包含异物时与所有组分一起使用）。该液相经受两个连续的温度梯度，其中第一个是轻微的，第二个陡峭的，使得组分被输送通过液相，使得化合物或合金的结晶发生在第二梯度的水平。液相和温度梯度以确定为使得液相的组成不改变并且使得结晶总是在相同温度下发生的速度相对于彼此移位。

19. 发明授权

US4018566A Light responsive measuring device for heater control 失效
标题翻译：用于加热器控制的光响应测量装置
公开(公告)号：US4018566A
公开(公告)日：1977-04-19
申请号：US559016
申请日：1975-03-17
申请人： Klaus Zeuch , Josef Stadter
发明人： Klaus Zeuch , Josef Stadter
IPC分类号： C30B11/06 , C30B13/00 , C30B13/28 , C30B29/40 , B01J17/08 , B01J17/06
CPC分类号： C30B13/28 , C30B13/00 , C30B29/44 , Y10T117/1004 , Y10T117/1012
摘要： In apparatus for the preparation of a semiconductor compound such as gallium phosphide using the Bridgman method in a horizontal system equipped with a heating device and disposed in a pressure vessel, the reaction tube is mounted in a stationary fashion in a reaction boat and the heating device supported so that it is moveable in the direction of the horizontal axis of the system to permit synthesis of the semiconductor compound along with zone melting and drawing of single crystals. A light guide having its free end arranged below the reaction tube is mounted to the heating device for movement therewith and is used to measure the temperature at the reaction boat.
摘要翻译：在装备有加热装置的水平系统中，使用布里奇曼法（Bridgman method）制备半导体化合物如磷化镓的设备，并设置在压力容器中，反应管以静止的方式安装在反应舟皿和加热装置支撑使得其可以在系统的水平轴线的方向上移动，以允许半导体化合物的合成以及单晶的区域熔融和拉伸。将其自由端布置在反应管下方的导光体安装到加热装置上以与其一起运动，并用于测量反应舟皿的温度。

20. 发明授权

US3829556A Growth of gallium nitride crystals 失效
标题翻译：氮化镓晶体的生长
公开(公告)号：US3829556A
公开(公告)日：1974-08-13
申请号：US23789672
申请日：1972-03-24
申请人： BELL TELEPHONE LABOR INC
发明人： LOGAN R , THURMOND C
IPC分类号： C09K11/74 , C30B19/02 , B01J17/06
CPC分类号： C30B29/406 , C09K11/7492 , C30B19/02
摘要： The size and photoluminescent efficiency of crystals of gallium nitride, grown in a solution of molten gallium and bismuth, are improved by maintaining the partial pressure of ammonia vapor in a hydrogen gas atmosphere flowing above the solution at a value which is, at most, about an order of magnitude greater than the ''''equilibrium pressure'''' of formation vs. decomposition of gallium nitride. The photoluminescent efficiency of a blue band, whose energy is centered around 4,350 angstroms, emitted by such gallium nitride crystals is also improved by introducing zinc vapor into the carrier gas.

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