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1. 发明授权

US4412935A Storage material for hydrogen utilizing amorphous silicon and a method for producing the same 失效
标题翻译：使用非晶硅的氢的储存材料及其制造方法
公开(公告)号：US4412935A
公开(公告)日：1983-11-01
申请号：US356231
申请日：1982-03-08
申请人： Rolf Plaettner , Wolfgang Kruehler
发明人： Rolf Plaettner , Wolfgang Kruehler
IPC分类号： B01J20/02 , C01B3/00 , C01B33/04 , B01J20/10
CPC分类号： C01B3/001 , Y02E60/324
摘要： A storage material for hydrogen comprised of amorphous silicon containing phosphorous, in addition to hydrogen (a-Si:H:P). In certain embodiments, such storage material is produced via a glow discharge plasma from a reactive gas mixture in accordance with a fluidized bed method or by quenching a phosphorous-doped silicon melt at a relatively high cooling rate. By admixing phosphorous with silicon, the absorption capacity of the resultant phosphorous-doped silicon material for hydrogen can be increased by a factor of 2 with the same production temperatures (200.degree. C.). The storage material is useful in energy storage tanks (cheap and easily mass-produced).
摘要翻译：除了氢（a-Si：H：P）外，由含有磷的非晶硅构成的氢的储存材料。在某些实施方案中，这种储存材料通过根据流化床法的反应气体混合物的辉光放电等离子体产生，或通过以相对较高的冷却速率淬灭磷掺杂的硅熔体。通过将磷与硅混合，所得到的用于氢的磷掺杂硅材料的吸收能力可以在相同的生产温度（200℃）下增加2倍。储存材料可用于储能罐（廉价且容易批量生产）。

2. 发明授权

US4292343A Method of manufacturing semiconductor bodies composed of amorphous silicon 失效
标题翻译：制造由非晶硅组成的半导体器件的方法
公开(公告)号：US4292343A
公开(公告)日：1981-09-29
申请号：US116982
申请日：1980-01-30
申请人： Rolf Plaettner , Wolfgang Kruehler , Josef Grabmaier
发明人： Rolf Plaettner , Wolfgang Kruehler , Josef Grabmaier
IPC分类号： H01L31/04 , C23C16/24 , H01L21/205 , H01L31/20 , C23C11/00
CPC分类号： H01L31/202 , C23C16/24 , H01L21/02425 , H01L21/02532 , H01L21/0262 , Y02E10/50 , Y02P70/521
摘要： Semiconductor bodies comprised of amorphous silicon are produced by sequentially depositing a plurality of amorphous silicon layers on a heat-resistant substrate by glow discharge in a silicon halide atmosphere at low pressures and low substrate temperatures, with each layer being hydrogenated with atomic hydrogen before deposition of the next subsequent layer. The semiconductor bodies thus produced are useful as basic or raw materials for fabricating solar cells.
摘要翻译：由非晶硅组成的半导体器件是通过在低压和低衬底温度的卤化硅气氛中通过辉光放电在耐热衬底上依次沉积多个非晶硅层而制造的，每个层在沉积之前用原子氢氢化下一个后续层。这样制造的半导体体可用作制造太阳能电池的基础或原料。

3. 发明授权

US5340410A Method for manufacturing polycrystalline silicon thin-film solar cells 失效
标题翻译：多晶硅薄膜太阳能电池的制造方法
公开(公告)号：US5340410A
公开(公告)日：1994-08-23
申请号：US970836
申请日：1992-11-03
申请人： Arthur Endroes , Wolfgang Kruehler , Richard Einzinger , Rolf Plaettner
发明人： Arthur Endroes , Wolfgang Kruehler , Richard Einzinger , Rolf Plaettner
IPC分类号： H01L21/302 , H01L21/3065 , H01L31/04 , H01L31/18 , H01L31/0392 , H01L31/0368
CPC分类号： H01L31/182 , Y02E10/546 , Y02P70/521
摘要： The present invention provides an improved method for manufacturing highly efficient and especially thin polycrystalline silicon thin-film solar cells. More particularly, the present invention provides a silicon nucleation layer produced on amorphous substrates with a nucleation layer being selectively etched until uniformly orientated nuclei remain. A silicon thin-film grown thereover is coarse-crystalline, has grain boundaries residing perpendicular to the substrate and has a pyramid structure as a consequence of the uniform orientation. High photocurrents can already be achieved with solar cells manufactured therefrom beginning with a layer thickness of 10 .mu.m.
摘要翻译：本发明提供一种用于制造高效且特别薄的多晶硅薄膜太阳能电池的改进方法。更具体地说，本发明提供了一种在非晶衬底上制造的硅成核层，其中成核层被选择性地蚀刻，直到保持均匀的取向核。其上生长的硅薄膜是粗晶体，其晶界垂直于衬底并且由于均匀取向而具有金字塔结构。已经可以用从10μm开始的太阳能电池开始高光电流。

4. 发明授权

US4162184A Producing layered penta-ultraphosphate monocrystals 失效
标题翻译：生产层状五磷酸盐单晶
公开(公告)号：US4162184A
公开(公告)日：1979-07-24
申请号：US821782
申请日：1977-08-04
申请人： Wolfgang Kruehler , Rolf Plaettner
发明人： Wolfgang Kruehler , Rolf Plaettner
IPC分类号： H01S3/05 , H01S3/06 , H01S3/16 , B01J17/06
CPC分类号： H01S3/1688
摘要： Monocrystalline substrates of gadolinium yttrium penta-ultraphosphate are coated with an epitaxial layer of neodymium yttrium penta-ultraphosphate to produce a wave guiding, laser active, solid state devices. The preparation procedure involves heating a solution of neodymium oxide and yttrium oxide in phosphoric acid to about 500.degree. C. with holding points being interposed at about 180.degree. C. and at about 370.degree. C. After the solution has been held at 500.degree. C. for about 12 through 15 hours, a preformed substrate monocrystal of gadolinium yttrium penta-ultraphosphate is introduced thereinto and a layer of monocrystalline neodymium yttrium penta-ultraphosphate is grown thereon.
摘要翻译：钬钇超磷酸钇的单晶衬底涂覆有钕钇五磷酸超外延层，以产生波导，激光活性固态器件。制备方法包括将氧化钕和氧化钇在磷酸中的溶液加热至约500℃，保持点在约180℃和约370℃下放置。将溶液保持在500℃ 在约12至15小时内，引入五硼酸钇超磷酸盐的预制基材单晶，并在其上生长一层单晶钕五钠超磷酸盐层。

5. 发明授权

US5238879A Method for the production of polycrystalline layers having granular crystalline structure for thin-film semiconductor components such as solar cells 失效
标题翻译：用于生产具有用于诸如太阳能电池的薄膜半导体部件的颗粒状晶体结构的多晶层的方法
公开(公告)号：US5238879A
公开(公告)日：1993-08-24
申请号：US758502
申请日：1991-09-06
申请人： Rolf Plaettner
发明人： Rolf Plaettner
IPC分类号： H01L21/20 , H01L31/18
CPC分类号： H01L31/186 , H01L21/2022 , H01L31/182 , Y02E10/546 , Y02P70/521 , Y10S148/122 , Y10S148/152 , Y10S148/154 , Y10S438/974
摘要： A method for producing polycrystalline layers having granular crystalline structure is provided. Pursuant to the method, a thin intermediate layer of amorphous is deposited before the deposition of the polycrystalline layer in order to avoid crystal structure influence proceeding from the substrate. The layer is then recrystallized applying a pattern of crystallization points or the amorphous layer. A detrimental effect of the fine-crystalline structure of the substrate is prevented by the amorphous intermediate layer. Pursuant to the present invention, the thin-film technology can also be utilized for polycrystalline silicon layers, this being especially desirable in the manufacture of solar cells.
摘要翻译：提供一种具有粒状结晶结构的多晶层的制造方法。根据该方法，在沉积多晶层之前沉积薄的非晶形中间层，以避免从衬底进行的晶体结构影响。然后将层重结晶施加结晶点或非晶层的图案。通过无定形中间层防止衬底的细晶结构的有害影响。根据本发明，薄膜技术也可以用于多晶硅层，这在太阳能电池的制造中是特别需要的。

6. 发明授权

US4948750A Method and apparatus for producing semiconductor layers composed of amorphous silicon-germanium alloys through glow discharge technique, particularly for solar cells 失效
标题翻译：用于通过辉光放电技术制造由非晶硅 - 锗合金构成的半导体层的方法和装置，特别是用于太阳能电池
公开(公告)号：US4948750A
公开(公告)日：1990-08-14
申请号：US322117
申请日：1989-03-13
申请人： Helmold Kausche , Rolf Plaettner
发明人： Helmold Kausche , Rolf Plaettner
IPC分类号： H01L21/205 , C23C16/22 , C23C16/509 , H01J37/32 , H01L31/04
CPC分类号： H01J37/321 , C23C16/22 , C23C16/5096 , H01J37/32678
摘要： A method and apparatus are provided for improving the dangling-bond saturation in amorphous silicon-germanium semiconductor layers. The deposition from the vapor phase of germane, silane, and hydrogen proceeds on the basis of different plasma excitations in the same reactor, that are spatially separated. Capacitive and inductively coupled plasmas are generated at different locations, in such a manner that the two plasmas superimpose in a central substrate region. For increasing the ionization density, the inductively excited plasma has a dc magnetic field for resonance excitation superimposed on it perpendicular to the radio frequency magnetic field. Amorphous silicon-germanium layers containing hydrogen are produced that have a low density of states and are particularly suitable for thin-film tandem solar cells.
摘要翻译：提供了一种用于改善非晶硅 - 锗半导体层中悬挂键饱和度的方法和装置。来自锗烷，硅烷和氢气的气相的沉积是在相同反应器中的不同等离子体激发的基础上进行的，其在空间上分离。在不同的位置产生电容和电感耦合等离子体，使得两个等离子体叠加在中心衬底区域中。为了增加电离密度，感应激发的等离子体具有垂直于射频磁场的谐振激励的直流磁场。产生含有氢的非晶硅锗层，其具有低密度状态，并且特别适用于薄膜串联太阳能电池。

7. 发明授权

US4744835A Arrangement for avoiding unwanted degradation in no-load operation of solar cell modules composed of amorphous silicon 失效
标题翻译：用于避免由非晶硅组成的太阳能电池模块的空载操作中的不必要的劣化的布置
公开(公告)号：US4744835A
公开(公告)日：1988-05-17
申请号：US160
申请日：1987-01-02
申请人： Guenter Winstel , Rolf Plaettner
发明人： Guenter Winstel , Rolf Plaettner
IPC分类号： G05F1/67 , H01L31/02 , H01L31/04 , H01L31/042 , H02N6/00 , H01L25/04
CPC分类号： H01L31/02021 , H01L31/03762 , H01L31/042 , H01L31/075 , Y02B10/10 , Y02E10/548 , Y10S136/293
摘要： In order to avoid unwanted degradation in no-load operation of solar cell modules composed, in particular, of amorphous silicon, an internal load resistor is integrated in the module and is connected across the output terminals during no-load operation of the module. Disconnection of the resistor during load operation occurs either in a mechanical manner by way of a mechanical switch integrated in a plug extending to the load or occurs automatically by way of an electronic switch. The arrangement is employed in operation of solar cell modules for systems having a non-continuous power consumption such as, for example, appliances in mobile homes, mountain chalets and the like.
摘要翻译：为了避免特别是非晶硅组成的太阳能电池模块的空载操作中的不必要的劣化，内部负载电阻器被集成在模块中，并且在模块的空载操作期间连接在输出端子两端。负载运行期间电阻的断开是通过集成在延伸到负载的插头中的机械开关以机械方式发生的，或者通过电子开关自动发生。该装置用于具有非连续功耗的系统的太阳能电池模块的操作，例如移动式家庭中的家电，山地小屋等。

8. 发明授权

US4948740A Method for the integrated series-interconnection of thick-film solar cells and method for the manufacture of tandem solar cells 失效
标题翻译：厚膜太阳能电池集成串联的方法及串联太阳能电池的制造方法
公开(公告)号：US4948740A
公开(公告)日：1990-08-14
申请号：US323867
申请日：1989-03-15
申请人： Rolf Plaettner
发明人： Rolf Plaettner
IPC分类号： H01L31/043 , H01L31/046
CPC分类号： H01L31/046 , H01L31/043 , H01L2924/0002 , Y02E10/50
摘要： A method is provided for the series-interconnection of a plurality of thick-film solar cells. Separating grooves in the thick-film semiconductor layer necessary for forming conductive connections between the cells are produced through a lift-off technique. The stripe pattern needed for the lift-off technique is applied onto a substrate having structured base electrodes. The stripe pattern is applied thereto as a paste in a silk-screening method before the surface-wide deposition of the thick-film semiconductor and is removed before the deposition of the cover electrode layer. Involved mechanical parting methods are avoided through the method of the present invention. According to an embodiment of the present invention, a polycrystalline silicon layer can be used as a thick-film and the solar cell manufactured therewith can be combined via an optional coupler with a solar cell based on amorphous, hydrogenated silicon (a-Si:H), whereby an a-Si:H cell comprising two transparent electrodes can be wired as the front cell. The method is cost-beneficial because it can be easily automated and allows a high throughput.
摘要翻译：提供了一种用于多个厚膜太阳能电池的串联互连的方法。通过剥离技术产生用于形成电池之间的导电连接所需的厚膜半导体层中的分隔槽。剥离技术所需的条纹图案被施加到具有结构化基底电极的基板上。在厚膜半导体的表面宽度沉积之前，将条纹图案作为糊剂施加于丝网筛选方法中，并且在覆盖电极层的沉积之前被去除。通过本发明的方法避免了涉及的机械分离方法。根据本发明的实施例，多晶硅层可以用作厚膜，并且其制造的太阳能电池可以通过可选的耦合器与基于无定形氢化硅（a-Si：H ），由此可以将包括两个透明电极的a-Si：H电池接线作为前电池。该方法是成本有益的，因为它可以容易地自动化并允许高吞吐量。

9. 发明授权

US4099836A Optical control device for integrated optical circuit 失效
标题翻译：集成光电路的光控装置
公开(公告)号：US4099836A
公开(公告)日：1978-07-11
申请号：US723146
申请日：1976-09-14
申请人： Peter Baues , Rolf Plaettner
发明人： Peter Baues , Rolf Plaettner
IPC分类号： G02F1/05 , G02F1/295 , G02B5/14
CPC分类号： G02F1/0508 , G02F1/2955
摘要： An optical control device suitable for utilization in an integrated optical system. The control device employs a monocrystalline substrate and a thin monocrystalline layer mounted thereon.
摘要翻译：适用于集成光学系统的光控制装置。控制装置采用单晶衬底和安装在其上的薄单晶层。

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