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    • 11. 发明授权
    • Acoustic semiconductor device
    • 声学半导体器件
    • US08648431B2
    • 2014-02-11
    • US13220116
    • 2011-08-29
    • Kazuhide AbeTadahiro SasakiAtsuko IidaKazuhiko ItayaTakashi Kawakubo
    • Kazuhide AbeTadahiro SasakiAtsuko IidaKazuhiko ItayaTakashi Kawakubo
    • H01L29/84
    • H03J3/20H03B5/326H03H9/02566
    • According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.
    • 根据一个实施例,声学半导体器件包括元件单元和第一端子。 元件单元包括声共振单元。 声共振单元包括半导体晶体。 声驻波在声共振单元中是可兴奋的,并且被配置为通过变形电势耦合效应与半导体晶体的至少一部分内的电荷密度同步耦合。 第一端子电连接到元件单元。 从输出和输入电信号中选出的至少一个可经由第一终端实现。 电信号与电荷密度耦合。 输出电信号来自声共振单元,并且输入电信号进入声共振单元。
    • 14. 发明申请
    • SELF-POWERED, PIEZO-SURFACE ACOUSTIC WAVE APPARATUS AND METHOD
    • 自激式PIEZO-SURFACE ACOUSTIC WAVE APPARATUS AND METHOD
    • US20110241839A1
    • 2011-10-06
    • US13128684
    • 2009-11-10
    • Amit LalSteven Tin
    • Amit LalSteven Tin
    • H04Q5/22G21H1/00G06K19/06G01G9/00
    • G21H1/02H03B5/326H03H9/0542H03H9/145
    • An autonomous, self-powered device includes a radioisotope-powered current impulse generator including a spring assembly comprising a cantilever, and a piezoelectric-surface acoustic wave (P-SAW) structure connected in parallel to the current impulse generator. Positive charges are accumulated on an electrically isolated 63Ni thin film due to the continuous emission of β-particles (electrons), which are collected on the cantilever. The accumulated charge eventually pulls the cantilever into the radioisotope thin-film until electrical discharge occurs. The electrical discharge generates a transient magnetic and electrical field that can excite the RF modes of a cavity in which the electrical discharge occurs. A piezoelectric-SAW resonator is connected to the discharge assembly to control the RF frequency output. A method for generating a tuned RF signal includes inputting an energy pulse to a P-SAW resonator, exciting the resonant frequency thereof, and outputting an RF signal having a frequency tuned to the resonator frequency.
    • 自主的自供电设备包括放射性同位素供电的电流脉冲发生器,其包括包括悬臂的弹簧组件和与电流脉冲发生器并联连接的压电表面声波(P-SAW)结构。 由于在悬臂上收集的颗粒(电子)的连续发射,在电隔离的63Ni薄膜上积累正电荷。 累积的电荷最终将悬臂拉入放射性同位素薄膜直到发生放电。 放电产生瞬态磁场和电场,其可以激发发生放电的空腔的RF模式。 压电SAW谐振器连接到放电组件以控制RF频率输出。 一种用于产生调谐RF信号的方法包括:向P-SAW谐振器输入能量脉冲,激励其谐振频率,以及输出具有调谐到谐振器频率的频率的RF信号。
    • 15. 发明申请
    • SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND ELECTRONIC INSTRUMENT
    • 表面声波谐振器,表面声波振荡器和电子仪器
    • US20100244626A1
    • 2010-09-30
    • US12713461
    • 2010-02-26
    • Kunihito YAMANAKA
    • Kunihito YAMANAKA
    • H01L41/047H03B5/32
    • H03H9/25H03B5/326H03H9/02551H03H9/0296H03H9/02992H03H9/14538H03H9/14594
    • A SAW resonator which, using a quartz crystal substrate with Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, and 42.79°≦|105|≦49.57°, includes an IDT which excites a stop band upper end mode SAW, and grooves hollowed out of the substrate positioned between electrode fingers configuring the IDT, wherein, when the wavelength of the SAW is λ and the depth of the inter-electrode finger grooves is G, λ and G satisfy the relationship of 0.01λ≦G and wherein, when the line occupation rate of the IDT is η, the groove depth G and line occupation rate η satisfy the relationships of −2.0000×G/λ+0.7200≦η≦−2.5000×G/λ+0.7775 provided that 0.0100λ≦G≦0.0500λ, −3.5898×G/λ+0.7995≦η≦−2.5000+G/λ+0.7775 provided that 0.0500λ
    • 一种SAW谐振器,其使用具有欧拉角(-1.5°&amp; nlE; 1.5°,117°&nl;; Thetas; nlE; 142°和42.79°&nlE; | 105 |&amp; 49.57°的石英晶体衬底, 包括激发阻挡带上端模式SAW的IDT以及位于构成IDT的电极指之间的基板中的凹槽,其中,当SAW的波长为λ且电极间的指槽的深度为G ,λ和G满足0.01λ&nlE; G的关系,其中,当IDT的线占有率为eEgr时,沟槽深度G和线占有率eegr满足-2.0000×G /λ+ 0.7200&nlE的关系 ;&eegr;&nlE; -2.5000×G /λ+ 0.7775,条件是0.0100λ&NlE; G&nlE;0.0500λ,-3.5898×G /λ+ 0.7995&nlE;&eegr&nlE; -2.5000 + G /λ+ 0.7775,条件是0.0500λ< G&nlE;0.0695λ。
    • 17. 发明申请
    • SURFACE ACOUSTIC WAVE OSCILLATOR AND METHOD OF VARYING FREQUENCY THEREOF
    • 表面声波振荡器及其频率变化的方法
    • US20080068105A1
    • 2008-03-20
    • US11847632
    • 2007-08-30
    • Aritsugu YAJIMA
    • Aritsugu YAJIMA
    • H03B5/30
    • H03B5/326H03B5/368
    • A surface acoustic wave oscillator includes: a cross-coupled circuit including first and second active elements differentially connected to first and second output terminals; first and second surface acoustic wave elements having different resonance frequencies and connected to the cross-coupled circuit in parallel; a first variable capacitance circuit including a first variable capacitance element and changing the resonance frequency of the first surface acoustic wave element; and a second variable capacitance circuit including a second variable capacitance element and changing the resonance frequency of the second surface acoustic wave element, wherein the first surface acoustic wave element is connected to the first variable capacitance circuit, the second surface acoustic wave element is connected to the second variable capacitance circuit, and oscillating outputs from combining outputs of the first and second surface acoustic wave elements are outputted by the cross-coupled circuit.
    • 声表面波振荡器包括:交叉耦合电路,包括与第一和第二输出端子差分连接的第一和第二有源元件; 具有不同谐振频率的第一和第二表面声波元件并联连接到交叉耦合电路; 包括第一可变电容元件并改变第一表面声波元件的谐振频率的第一可变电容电路; 以及包括第二可变电容元件并改变第二弹性表面波元件的共振频率的第二可变电容电路,其中第一声表面波元件连接到第一可变电容电路,第二声表面波元件连接到 第二可变电容电路和来自第一和第二声表面波元件的组合输出的振荡输出由交叉耦合电路输出。
    • 18. 发明申请
    • Oscillator Circuit Including Surface Acoustic Wave Sensor and Biosensor Apparatus
    • 包括表面声波传感器和生物传感器设备的振荡器电路
    • US20070252475A1
    • 2007-11-01
    • US10595317
    • 2004-09-08
    • Kenjiro OkaguchiKoji FujimotoMichio Kadota
    • Kenjiro OkaguchiKoji FujimotoMichio Kadota
    • G01N29/02
    • G01N29/36G01N29/022G01N29/2462G01N2291/014G01N2291/0256G01N2291/0423H03B5/326H03B5/362
    • A surface-acoustic-wave-sensor-included oscillator circuit does not cause separation of an electrode film due to application of a bias voltage and can reliably accurate operate even if liquid is adhered thereto. The surface-acoustic-wave-sensor-included oscillator circuit includes interdigital electrode disposed on a piezoelectric substrate and a reaction film that is arranged so as to cover the interdigital electrodes and bound to a target substance or a binding material to be bound to the target substance. A surface acoustic wave sensor that is capable of detecting a bit of mass loading on the basis of a variation in frequency is connected as a resonator in the surface-acoustic-wave-sensor-included oscillator circuit. Direct-current cutting capacitors are connected in series to the surface acoustic wave sensor, and the direct-current cutting capacitors respectively define impedance matching circuits in the surface-acoustic-wave-sensor-included oscillator circuit.
    • 包含表面声波传感器的振荡电路不会由于施加偏压而引起电极膜的分离,即使液体粘附在其上也能够可靠地进行精确的动作。 包含表面声波传感器的振荡电路包括布置在压电基片上的叉指式电极和反射膜,该反射膜布置成覆盖指状电极并结合到靶物质或结合材料上以与目标物结合 物质。 能够在基于频率变化的基础上检测质量负载量的表面声波传感器作为共振器连接在包含表面声波传感器的振荡电路中。 直流切割电容器与表面声波传感器串联连接,直流切断电容器分别在包含表面声波传感器的振荡电路中形成阻抗匹配电路。