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11. 发明申请

US20060138395A1 Semiconductor photoelectric surface and its manufacturing method, and photodetecting tube using semiconductor photoelectric surface 审中-公开
标题翻译：半导体光电表面及其制造方法，以及使用半导体光电表面的光电管
公开(公告)号：US20060138395A1
公开(公告)日：2006-06-29
申请号：US10515112
申请日：2003-05-21
申请人： Yasuyuki Kohno , Toshimitsu Nagai , Yutaka Hasegawa
发明人： Yasuyuki Kohno , Toshimitsu Nagai , Yutaka Hasegawa
IPC分类号： H01L29/06
CPC分类号： H01J43/08 , H01J1/34 , H01J9/12 , H01J40/06
摘要： A semiconductor photocathode of the present invention is provided with: a support substrate 10; a photoelectric surface 30 which is formed of a plurality of semiconductor layers layered on this support substrate 10 and which emits photoelectrons from a photoelectron emitting surface 341 in response to the incidence of light to be detected; and a metal electrode 35 which is formed in film form so as to coat at least a portion of support substrate 10 and a portion of photoelectric surface 30 and which makes ohmic contact with the photoelectric surface, wherein metal electrode 30 in film form includes titanium and the electron affinity of photoelectron emitting surface 341, which is an exposed portion of photoelectric surface 30 without being coated with metal electrode 35 in film form, is in a negative condition.
摘要翻译：本发明的半导体光电阴极具有：支撑基板10; 光电表面30，其由层叠在该支撑基板10上的多个半导体层形成，并且响应于待检测的光的入射而从光电子发射表面341发射光电子; 以及形成为膜状以便涂覆至少一部分支撑基板10和光电表面30的一部分并与光电表面欧姆接触的金属电极35，其中膜形式的金属电极30包括钛和作为光电面30的露出部分的光电子发射表面341的电子亲和力没有涂覆有薄膜形式的金属电极35，处于负面状态。

12. 发明申请

US20060049755A1 Alkali metal generating agent, alkali metal generator, photoelectric surface, secondary electron emission surface, electron tube, method for manufacturing photoelectric surface, method for manufacturing secondary electron emission surface, and method for manufacturing electron tube 有权
标题翻译：碱金属发生剂，碱金属发生剂，光电表面，二次电子发射表面，电子管，光电表面制造方法，二次电子发射表面的制造方法和电子管的制造方法
公开(公告)号：US20060049755A1
公开(公告)日：2006-03-09
申请号：US10537587
申请日：2004-01-16
申请人： Takashi Watanabe , Yoshiro Akai , Shirou Sakai
发明人： Takashi Watanabe , Yoshiro Akai , Shirou Sakai
IPC分类号： H01J40/06 , H01J31/50
CPC分类号： C22B26/10 , C22B5/04 , C23C14/14 , C23C14/243 , H01J1/35 , H01J9/12 , H01J2201/32 , H01J2201/3426
摘要： The present invention relates to an alkali metal generating agent and others for formation of a photo-cathode or a secondary-electron emitting surface capable of stably generating an alkali metal. The alkali metal generating agent is used in formation of a photo-cathode for emitting a photoelectron corresponding to incident light, or in formation of a secondary-electron emitting surface for emitting secondary electrons corresponding to an incident electron. Particularly, the alkali metal generating agent contains at least an oxidizer comprising at least one vanadate with an alkali metal ion as a counter cation, and a reducer for reducing the ion. An alkali metal generating device comprises at least the alkali metal generating agent and a case housing it, and the case is provided with a discharge port for discharging the vapor of the alkali metal.
摘要翻译：本发明涉及一种用于形成能够稳定产生碱金属的光阴极或二次电子发射表面的碱金属发生剂等。碱金属发生剂用于形成用于发射对应于入射光的光电子的光阴极，或者形成用于发射对应于入射电子的二次电子的二次电子发射表面。特别地，碱金属发生剂至少包含至少一种含有碱金属离子作为抗衡阳离子的钒酸盐的氧化剂和用于还原离子的还原剂。碱金属发生装置至少包括碱金属发生剂和容纳它的壳体，并且壳体设置有用于排出碱金属的蒸气的排出口。

13. 发明授权

US06992441B2 MBE grown alkali antimonide photocathodes 有权
标题翻译： MBE生长碱锑光电阴极
公开(公告)号：US06992441B2
公开(公告)日：2006-01-31
申请号：US10711354
申请日：2004-09-13
申请人： Robert Glosser , Joseph P. Estrera , Loig E. Bourree
发明人： Robert Glosser , Joseph P. Estrera , Loig E. Bourree
IPC分类号： H01J40/06 , H01J40/14
CPC分类号： H01J9/12 , H01J40/06
摘要： A photocathode manufacturing intermediary article (24) includes a substrate layer (26), and an active layer (20) that is carried by the substrate layer (26). The active layer (20) includes photoemissive alkali antimonide material that is epitaxially grown on the substrate (26).
摘要翻译：光电阴极制造中间体（24）包括基底层（26）和由基底层（26）承载的活性层（20）。有源层（20）包括在衬底（26）上外延生长的光发射碱锑化物材料。

14. 发明授权

US06753648B2 Cesium dispensers and process for the use thereof 有权
标题翻译：铯分配器及其使用方法
公开(公告)号：US06753648B2
公开(公告)日：2004-06-22
申请号：US10465004
申请日：2003-06-19
申请人： Claudio Boffito , Luca Toia , Lorena Cattaneo
发明人： Claudio Boffito , Luca Toia , Lorena Cattaneo
IPC分类号： H01J1726
CPC分类号： H01J9/12 , C23C14/06 , C23C14/243 , C30B23/06 , H01L51/002 , H01L51/5012 , H05B33/10 , H05B33/22
摘要： Cesium dispensers are produced based on the use of a mixture of at least one reducing agent and at least one cesium compound selected among molybdate, tungstate, niobate, tantalate, silicate and zirconate. The cesium dispensers are useful in the production of OLED-type screens.
摘要翻译：基于使用选自钼酸盐，钨酸盐，铌酸盐，钽酸盐，硅酸盐和锆酸盐中的至少一种还原剂和至少一种铯化合物的混合物来制备铯分配器。铯分配器可用于生产OLED型屏幕。

15. 发明授权

US06692209B1 Method and system for manufacturing a photocathode 失效
标题翻译：制造光电阴极的方法和系统
公开(公告)号：US06692209B1
公开(公告)日：2004-02-17
申请号：US09443180
申请日：1999-11-19
申请人： James D. Pruet , David G. Couch
发明人： James D. Pruet , David G. Couch
IPC分类号： B65G4907
CPC分类号： H01J9/12 , Y10S414/139
摘要： A system (10) for manufacturing a photocathode includes a housing (12) having a first end and a second end. The first end of the housing (12) is operable to be coupled to a vacuum chamber (22). The system (10) also includes a drive support (20) disposed within the housing (12). The system (10) includes a shaft (14) disposed within the housing (12) and a ladder (16) coupled to the shaft (14). The ladder (16) includes at least one rung (140) to retain the photocathode. The system (10) further includes a drive system (18) supported by the drive support (20) within the housing (12). The drive system (18) is coupled to the shaft (14) and is operable to translate the shaft (14) relative to the housing (12) to position the rung (140) of the ladder (16) at a predetermined location within the vacuum chamber (22).
摘要翻译：用于制造光电阴极的系统（10）包括具有第一端和第二端的壳体（12）。壳体（12）的第一端可操作以联接到真空室（22）。系统（10）还包括设置在壳体（12）内的驱动支架（20）。系统（10）包括设置在壳体（12）内的轴（14）和联接到轴（14）的梯子（16）。梯子（16）包括至少一个用于保持光电阴极的梯级（140）。系统（10）还包括由壳体（12）内的驱动支撑（20）支撑的驱动系统（18）。驱动系统（18）联接到轴（14）并且可操作以相对于壳体（12）平移轴（14），以将梯子（16）的梯级（140）定位在梯子（16）的预定位置真空室（22）。

16. 发明申请

US20030222579A1 Photocathode 有权
标题翻译：光电阴极
公开(公告)号：US20030222579A1
公开(公告)日：2003-12-04
申请号：US10293014
申请日：2002-11-13
申请人： Burle Technologies, Inc.
发明人： Youssef M. Habib , John G. Bryan , Charles W. Stoll , John W. Steinbeck
IPC分类号： H01J040/16
CPC分类号： B82Y20/00 , B82Y10/00 , H01J1/34 , H01J9/12 , H01J40/16
摘要： An electron-emitting photocathode includes a base and a large number of projecting elements such as microscopic wires projecting from a surface of the base. The photocathode has high quantum efficiency, and hence can be used as the emitting element in a sensitive phototube.
摘要翻译：电子发射光电阴极包括基底和大量突出元件，例如从基底的表面突出的微细线。光电阴极具有高量子效率，因此可以用作敏感光电管中的发光元件。

17. 发明授权

US6146229A Cathode structure for reduced emission and robust handling properties 失效
标题翻译：阴极结构，减少排放和强大的处理性能
公开(公告)号：US6146229A
公开(公告)日：2000-11-14
申请号：US080424
申请日：1998-05-18
申请人： Arlynn W. Smith , Warren David Vrescak
发明人： Arlynn W. Smith , Warren David Vrescak
IPC分类号： H01J1/34 , H01J9/12 , H01J9/02
CPC分类号： H01J9/12 , H01J1/34 , H01J2201/3423 , H01J2231/5001
摘要： A photocathode device for use in an image intensifier, fabricated with a photoemissive semiconductor wafer having an active cathode layer which includes a central region of a first predetermined height surrounded by a peripheral region of a second predetermined height. The first predetermined height of the central region is configured to be greater than the second predetermined height of the peripheral region in order to create a recessed contact structure which is less likely to have unwanted emission points. A layer of conductive material covers the peripheral region to provide an electrical contact to the photocathode device. A layer of insulating material covers the layer of conductive material in order to protect the contact layer from being damage during handling operations.
摘要翻译：一种用于图像增强器的光电阴极器件，其由具有活性阴极层的发光半导体晶片制造，所述活性阴极层包括由第二预定高度的周边区域包围的第一预定高度的中心区域。中心区域的第一预定高度被配置为大于周边区域的第二预定高度，以便产生不太可能具有不需要的发射点的凹陷接触结构。一层导电材料覆盖周边区域以提供与光电阴极器件的电接触。一层绝缘材料覆盖导电材料层，以保护接触层在操作过程中不被损坏。

18. 发明授权

US5992429A Method for cleaning semiconductor wafers with an external heat source 失效
标题翻译：用外部热源清洗半导体晶片的方法
公开(公告)号：US5992429A
公开(公告)日：1999-11-30
申请号：US815959
申请日：1997-03-13
申请人： Robert Peckman
发明人： Robert Peckman
IPC分类号： B08B7/00 , H01J9/12 , H01L21/00
CPC分类号： H01L21/67115 , B08B7/0035 , H01J9/12 , H01L21/67028 , Y10S134/902
摘要： A method of cleaning semiconductor wafers by use of a heat source external to the system is disclosed. The semiconductor wafers are disposed within a vacuum chamber having a transmissive window, and a radiant heat source external to the chamber is applied so that the radiation passes through the window onto the semiconductor wafers. The invention has particular application to semiconductor wafers used for photocathodes and image intensifier tubes.
摘要翻译：公开了通过使用系统外部的热源清洁半导体晶片的方法。将半导体晶片设置在具有透射窗口的真空室内，并且施加室外的辐射热源，使得辐射通过窗口通过半导体晶片。本发明特别适用于用于光电阴极和图像增强管的半导体晶片。

19. 发明授权

US5726076A Method of making thin-film continuous dynodes for electron multiplication 失效
标题翻译：制造电子倍增的薄膜连续倍增极的方法
公开(公告)号：US5726076A
公开(公告)日：1998-03-10
申请号：US365242
申请日：1994-12-28
申请人： G. William Tasker , Jerry Randall Horton
发明人： G. William Tasker , Jerry Randall Horton
IPC分类号： H01J9/12 , H01J43/24 , H01J49/02 , H01J41/00
CPC分类号： H01J43/246 , H01J49/025 , H01J9/12 , H01J2201/32 , H01J2201/3423
摘要： The invention is directed to continuous dynodes formed by thin-film processing techniques. According to one embodiment of the invention, a continuous dynode is formed by reacting a chemical vapor in the presence of a substrate at a temperature and pressure sufficient to result in chemical vapor deposition. In another embodiment, the layer is formed by liquid phase deposition and in another embodiment, the layer is formed by nitriding or oxidizing a substrate.
摘要翻译：本发明涉及通过薄膜加工技术形成的连续倍增极。根据本发明的一个实施方案，通过在足以导致化学气相沉积的温度和压力下在基板存在下使化学气相反应形成连续的倍增极。在另一个实施方案中，该层通过液相沉积形成，并且在另一个实施方案中，该层通过氮化或氧化底物而形成。

20. 发明授权

US5449449A Method for the fabrication of a scintillator and scintillator obtained thereby 失效
标题翻译：用于制造由此获得的闪烁体和闪烁体的方法
公开(公告)号：US5449449A
公开(公告)日：1995-09-12
申请号：US365326
申请日：1994-12-28
申请人： Gerard Vieux , Paul De Groot
发明人： Gerard Vieux , Paul De Groot
IPC分类号： H01J9/233 , G21K4/00 , H01J9/12 , H01J29/38 , H01J31/50 , C25D5/00
CPC分类号： H01J29/385 , G21K4/00 , H01J9/12
摘要： Disclosed is a improvement in the fabrication of a scintillator, notably for the input screen of an X-ray image intensifier tube. According to the disclosure, the substrate on which a layer of scintillating material such as cesium iodide deposited in is made to grow is subjected to a treatment resulting in the formation of an alveolate structure or surface state, the consequence of which is the formation of thinner needles. The reduction of the mean diameter of the needles results in a improvement of the resolution of the device.
摘要翻译：公开了闪烁体的制造的改进，特别是对于X射线图像增强管的输入屏幕。根据公开内容，使其上沉积有诸如碘化铯的闪烁材料层生长的基底进行处理，从而形成叶绿体结构或表面状态，其结果是形成更薄的针。针的平均直径的减小导致装置的分辨率的提高。

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