专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20040248044A1 Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the same 失效
标题翻译：半导体器件的制造方法，模板掩模及其制造方法
公开(公告)号：US20040248044A1
公开(公告)日：2004-12-09
申请号：US10886656
申请日：2004-07-09
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kyoichi Suguro , Takeshi Shibata , Kazuyoshi Sugihara , Kouji Matsuo
IPC分类号： B32B003/10 , G03C005/00 , B32B013/04 , G21G005/00 , H01L021/26 , B32B009/04 , H01L021/324 , A61N005/00
CPC分类号： B82Y10/00 , C23C14/042 , C23C14/48 , G03F1/20 , H01J2237/0453 , H01J2237/31788 , H01L21/266 , Y10T428/24273
摘要： Preparing a stencil mask comprising a silicon thin film in which an opening for selectively irradiating charged particles to a semiconductor substrate is provided and whose irradiation surface on which the charged particles are irradiated is implanted with an impurity, and selectively irradiating charged particles to the semiconductor substrate using the stencil mask which is opposingly arranged on the semiconductor substrate.
摘要翻译：制备包括硅薄膜的模板掩模，其中用于选择性地将带电粒子照射到半导体基板的开口，并且其上照射有带电粒子的照射面被注入杂质，并且将带电粒子选择性地照射到半导体衬底使用相对设置在半导体衬底上的模板掩模。

12. 发明授权

US06727507B2 Electron beam proximity exposure apparatus and method 失效
标题翻译：电子束接近曝光装置及方法
公开(公告)号：US06727507B2
公开(公告)日：2004-04-27
申请号：US09765388
申请日：2001-01-22
申请人： Nobuo Shimazu , Takao Utsumi
发明人： Nobuo Shimazu , Takao Utsumi
IPC分类号： H01J3700
CPC分类号： B82Y10/00 , B82Y40/00 , G21K1/08 , H01J37/3174 , H01J2237/31788
摘要： The electron beam proximity exposure apparatus comprises: an electron beam source which emits an electron beam; an electron beam shaping device which shapes the electron beam; a mask which has an aperture and is disposed on a path of the shaped electron beam; a deflecting and scanning device which deflects the electron beam to scan the mask with the shaped electron beam; and a stage which holds and moves an object, wherein the mask is disposed in proximity to a surface of the object, and a pattern corresponding to the aperture of the mask is exposed on the surface of the object with the electron beam having passed through the aperture, wherein the electron beam shaping device shapes the electron beam into a slender beam of which cross section has a small width in a direction of the scanning and a large width in a direction perpendicular to the direction of the scanning. Thus, in the electron beam proximity exposure apparatus, the responsiveness of the on-off control over the application of the electron beam can be improved with keeping the scanning width large without lowering the throughput of the exposure apparatus.
摘要翻译：电子束接近曝光装置包括：发射电子束的电子束源; 形成电子束的电子束整形装置; 具有孔径并设置在成形电子束的路径上的掩模; 偏转和扫描装置，其使电子束偏转以用成形电子束扫描掩模; 以及保持和移动物体的台阶，其中所述掩模设置在所述物体的表面附近，并且与所述掩模的孔径相对应的图案在所述物体的表面上暴露，所述电子束已经通过所述物体孔，其中电子束成形装置将电子束成形为在扫描方向上横截面具有小宽度并且在垂直于扫描方向的方向上具有大宽度的细长光束。因此，在电子束接近曝光装置中，通过保持扫描宽度大而不降低曝光装置的生产能力，可以提高对施加电子束的开 - 关控制的响应性。

13. 发明申请

US20040004195A1 MASK INSPECTING APPARATUS 失效
标题翻译：屏蔽检查装置
公开(公告)号：US20040004195A1
公开(公告)日：2004-01-08
申请号：US10188335
申请日：2002-07-03
申请人： LEEPL Corporation
发明人： Takao Utsumi
IPC分类号： H01J037/304
CPC分类号： H01J37/3175 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/24592 , H01J2237/31776 , H01J2237/31788 , H01J2237/31794
摘要： The mask inspecting apparatus is incorporated into an electron beam proximity exposure apparatus in which a mask is arranged in proximity to a wafer, and a mask pattern formed on the mask is transferred onto a resist layer on the wafer by scanning the mask with an electron beam. The mask inspecting apparatus comprises a scanning electron microscope (SEM) arranged on a wafer stage, and a stage drive device which shifts the wafer stage so that an electron detector of the SEM can receive electrons originating from the electron beam transmitting through the mask pattern of the mask in an inspection of the mask. The SEM thereby captures an image of the mask pattern on the lower face of the mask. Thus, the mask inspection can be performed using an electron beam intended for use in proximity exposure in the electron beam proximity exposure apparatus.
摘要翻译：掩模检查装置被结合到电子束接近曝光装置中，其中掩模布置在晶片附近，并且通过用电子束扫描掩模将形成在掩模上的掩模图案转移到晶片上的抗蚀剂层上。掩模检查装置包括布置在晶片台上的扫描电子显微镜（SEM）和移动晶片台的载物台驱动装置，使得SEM的电子检测器可以接收源自通过掩模图案发射的电子束的电子面具在检查面具。 SEM从而在掩模的下表面上捕获掩模图案的图像。因此，可以使用旨在用于电子束接近曝光装置中的接近曝光的电子束来进行掩模检查。

14. 发明授权

US06653644B1 Pattern exposure method and apparatus 失效
标题翻译：图案曝光方法和装置
公开(公告)号：US06653644B1
公开(公告)日：2003-11-25
申请号：US09602460
申请日：2000-06-23
申请人： Ken Nakajima
发明人： Ken Nakajima
IPC分类号： H01J37302
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , H01J37/3174 , H01J2237/31761 , H01J2237/31788 , H01J2237/31794
摘要： In a pattern exposure method and apparatus for projecting a circuit pattern on a circuit member by an electron beam passing through a pattern exposure mask having a number of exposure regions separated from one another by a boundary region, the pattern exposure mask additionally includes a beam restraining area for restraining the electron beam scattered by the boundary region, so that the strength of the total background exposure is equalized.
摘要翻译：在通过通过具有通过边界区域彼此分离的曝光区域的数目的图案曝光掩模的电子束将电路图案投影在电路构件上的图案曝光方法和装置中，图案曝光掩模还包括光束抑制用于抑制由边界区域散射的电子束的区域，使得总背景曝光的强度相等。

15. 发明授权

US06355385B1 Methods for making reticle blanks, and for making reticles therefrom, for charged-particle-beam microlithography 失效
标题翻译：用于制作掩模版坯料并用于制作掩模版的方法用于带电粒子束微光刻法
公开(公告)号：US06355385B1
公开(公告)日：2002-03-12
申请号：US09574279
申请日：2000-05-19
申请人： Shin-ichi Takahashi
发明人： Shin-ichi Takahashi
IPC分类号： G03F900
CPC分类号： G03F1/20 , H01J2237/0453 , H01J2237/31788
摘要： Methods are disclosed for manufacturing reticle blanks, and reticles therefrom, for use in charged-particle-beam microlithography. The subject reticles exhibit substantially less tensile stress and thus substantially less pattern distortion, than conventional reticles. In a representative method, a silicon substrate is provided that includes an active silicon layer and a silicon support portion. At least on the silicon support portion, a wet-etching mask is formed that defines a prescribed pattern of openings corresponding to a desired pattern of windows. The silicon support portion, exposed in the openings, is wet etched depthwise toward the active silicon layer. After completing etching, a protective film of an oxygen-impermeable material is formed over the wet-etched product. The product is annealed, followed by removal of the protective film.
摘要翻译：公开了用于制造用于带电粒子束微光刻的掩模版坯料及其标线片的方法。与传统的掩模版相比，被摄体标线片显示出显着较小的拉伸应力，因此显着减小图案变形。在代表性的方法中，提供了包括有源硅层和硅支撑部分的硅衬底。至少在硅支撑部分上，形成湿蚀刻掩模，其限定对应于期望的窗户图案的规定的开口图案。暴露在开口中的硅支撑部分被深度地朝向有源硅层蚀刻。在完成蚀刻之后，在湿蚀刻产品上形成不透氧材料的保护膜。将产品退火，然后除去保护膜。

16. 发明授权

US06218058B1 Charged particle beam transfer mask 失效
标题翻译：带电粒子束传递掩模
公开(公告)号：US06218058B1
公开(公告)日：2001-04-17
申请号：US09363686
申请日：1999-07-29
申请人： Takehisa Yahiro , Kazuaki Suzuki , Shin-ichi Kojima
发明人： Takehisa Yahiro , Kazuaki Suzuki , Shin-ichi Kojima
IPC分类号： G03F900
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , H01J37/3174 , H01J2237/31788
摘要： A charged particle beam transfer mask (6) has a plurality of subfields (8) each of which having a different pattern density. The charged particle beam transfer mask (6) divide-irradiates a charged particle beam (5) for each of the subfields (8) and reduce-transfers a pattern onto a sensitive substrate. The charged particle beam transfer mask (6) corrects the differences in the de-focus amounts (3) caused by Coulomb effect due to the different pattern densities when the pattern is transferred for each of the subfields (8) so as to eliminate the differences in the de-focus amounts (3) caused by Coulomb effect by pre-varying the position (height) of each of the subfields (8) in the optical axis direction.
摘要翻译：带电粒子束传递掩模（6）具有多个具有不同图案密度的子场（8）。带电粒子束传递掩模（6）对每个子场（8）分开照射带电粒子束（5），并将图案减少到敏感基片上。带电粒子束传递掩模（6）校正当为每个子场（8）传送图案时由于不同图案密度而由库仑效应引起的去焦量（3）的差异，以消除差异在通过预先改变每个子场（8）在光轴方向上的位置（高度）而由库仑效应引起的去焦量（3）中。

17. 发明授权

US06175121B1 Block mask and charged particle beam exposure method and apparatus using the same 有权
标题翻译：阻挡掩模和带电粒子束曝光方法及使用其的装置
公开(公告)号：US06175121B1
公开(公告)日：2001-01-16
申请号：US09159603
申请日：1998-09-24
申请人： Akio Yamada , Hiroshi Yasuda
发明人： Akio Yamada , Hiroshi Yasuda
IPC分类号： H01J37302
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F7/16 , G03F7/2037 , H01J37/3026 , H01J2237/31764 , H01J2237/31767 , H01J2237/31776 , H01J2237/31788 , H01L21/0279
摘要： A block mask for making a charged particle beam exposure using block exposure includes a plurality of block mask patterns respectively including repeating patterns, where the block mask patterns are arranged in an order dependent on an exposure sequence, at least one first block mask pattern group made up of arbitrary ones of the block mask patterns which are arranged in a predetermined direction, and at least one second block mask pattern group made up of the arbitrary ones of the block mask patterns which are arranged in a direction opposite to the predetermined direction. The second block mask pattern group is arranged adjacent to the first block mask pattern group.
摘要翻译：使用块曝光进行带电粒子束曝光的块掩模包括分别包括重复图案的多个块掩模图案，其中块掩模图案以依赖于曝光序列的顺序排列，至少一个第一块掩模图案组沿预定方向布置的块掩模图案中的任意一个块掩模图案，以及由沿与预定方向相反的方向布置的任意块掩模图案组成的至少一个第二块掩模图案组。第二块掩模图案组被布置为与第一块掩模图案组相邻。

18. 发明授权

US6110626A Segmented stencil masks with main field and side fields containing complementary subfields, and methods for using same 失效
标题翻译：具有包含补充子场的主场和侧场的分段模板掩模，以及使用它们的方法
公开(公告)号：US6110626A
公开(公告)日：2000-08-29
申请号：US111451
申请日：1998-07-08
申请人： Mamoru Nakasuji
发明人： Mamoru Nakasuji
IPC分类号： G03C5/00 , G03F1/20 , G03F7/20 , G03F9/00 , H01L21/027
CPC分类号： G03F1/20 , H01J2237/31764 , H01J2237/31788 , H01J2237/31794
摘要： Projection-transfer methods, and segmented masks for use with reduction projection-transfer apparatus and methods, are disclosed that permit formation of large-scale device patterns on a mask substrate having limited dimensions. The overall mask pattern is divided into multiple subfields. For each subfield, a determination is made as to whether to divide the subfield into complementary subfields, based on the configuration and dimensions of certain features in the subfields such as islands and peninsular features. All resulting undivided subfields, and one of the complementary subfields of all the divided subfields, are situated in a main field of the mask on a mask substrate. The remaining complementary subfields are situated in side fields flanking the main field.
摘要翻译：公开了投影转移方法和用于还原投影转移装置和方法的分段掩模，其允许在具有有限尺寸的掩模基板上形成大规模装置图案。总体掩模图案分为多个子字段。对于每个子场，基于子场中的某些特征（例如岛屿和半岛特征）的配置和尺寸，确定是否将子场划分成互补子场。所有得到的未分割子场和所有分割子场的补充子场之一位于掩模基板上的掩模的主场中。剩余的补充子场位于主场侧面的侧场。

19. 发明授权

US5849436A Block mask and charged particle beam exposure method and apparatus using the same 失效
标题翻译：阻挡掩模和带电粒子束曝光方法及使用其的装置
公开(公告)号：US5849436A
公开(公告)日：1998-12-15
申请号：US512912
申请日：1995-08-09
申请人： Akio Yamada , Hiroshi Yasuda
发明人： Akio Yamada , Hiroshi Yasuda
IPC分类号： G21K5/04 , G03F7/16 , G03F7/20 , H01J37/302 , H01L21/027 , H01L21/30
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F7/16 , G03F7/2037 , H01J37/3026 , H01L21/0279 , H01J2237/31764 , H01J2237/31767 , H01J2237/31776 , H01J2237/31788
摘要： A block mask for making a charged particle beam exposure using block exposure includes a plurality of block mask patterns respectively including repeating patterns, where the block mask patterns are arranged in an order dependent on an exposure sequence, at least one first block mask pattern group made up of arbitrary ones of the block mask patterns which are arranged in a predetermined direction, and at least one second block mask pattern group made up of the arbitrary ones of the block mask patterns which are arranged in a direction opposite to the predetermined direction. The second block mask pattern group is arranged adjacent to the first block mask pattern group.
摘要翻译：使用块曝光进行带电粒子束曝光的块掩模包括分别包括重复图案的多个块掩模图案，其中块掩模图案以依赖于曝光序列的顺序排列，至少一个第一块掩模图案组沿预定方向布置的块掩模图案中的任意一个块掩模图案，以及由沿与预定方向相反的方向布置的任意块掩模图案组成的至少一个第二块掩模图案组。第二块掩模图案组被布置为与第一块掩模图案组相邻。

20. 发明授权

US5824437A Mask and method of creating mask as well as electron-beam exposure method and electron-beam exposure device 失效
标题翻译：掩模和创建掩模的方法以及电子束曝光方法和电子束曝光装置
公开(公告)号：US5824437A
公开(公告)日：1998-10-20
申请号：US685958
申请日：1996-07-22
申请人： Takayuki Sakakibara , Satoru Sagoh , Satoru Yamazaki , Kiichi Sakamoto , Hiroshi Yasuda
发明人： Takayuki Sakakibara , Satoru Sagoh , Satoru Yamazaki , Kiichi Sakamoto , Hiroshi Yasuda
IPC分类号： G03F1/20 , H01J37/317 , G03F9/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , H01J37/3174 , H01J2237/31764 , H01J2237/31788
摘要： A mask for exposure of an object by an electron beam is formed of a plate of material which blocks the electron beam and which has plural pattern exposure blocks defined therein, each having one or more aperture defining regions therein and, when selected, determining the shaping of the electron beam passing therethrough so as to expose a respective pattern on an object. Each aperture-defining region has one aperture or plural, spaced apertures formed respectively therein, having a total area size, selected to be smaller than the area size of the aperture defining region in accordance with controlling the current level of an electron beam passing therethrough, while reducing Coulomb interaction of the electron beam passing through the aperture or apertures of each aperture defining portion of the pattern exposure block.
摘要翻译：用于通过电子束曝光物体的掩模由阻挡电子束并且其中限定有多个图案曝光块的材料板形成，每个在其中具有一个或多个孔限定区域，并且当被选择时，确定成形的电子束通过其中以使物体上的相应图案曝光。每个孔限定区域具有根据控制通过其中的电子束的电流水平而分别形成的具有总面积尺寸的一个孔径或多个间隔开的孔，其选择为小于孔限定区域的面积尺寸，同时减少通过图案曝光块的每个孔限定部分的孔或孔的电子束的库仑相互作用。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式