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1. 发明申请

US20040004195A1 MASK INSPECTING APPARATUS 失效
标题翻译：屏蔽检查装置
公开(公告)号：US20040004195A1
公开(公告)日：2004-01-08
申请号：US10188335
申请日：2002-07-03
申请人： LEEPL Corporation
发明人： Takao Utsumi
IPC分类号： H01J037/304
CPC分类号： H01J37/3175 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/24592 , H01J2237/31776 , H01J2237/31788 , H01J2237/31794
摘要： The mask inspecting apparatus is incorporated into an electron beam proximity exposure apparatus in which a mask is arranged in proximity to a wafer, and a mask pattern formed on the mask is transferred onto a resist layer on the wafer by scanning the mask with an electron beam. The mask inspecting apparatus comprises a scanning electron microscope (SEM) arranged on a wafer stage, and a stage drive device which shifts the wafer stage so that an electron detector of the SEM can receive electrons originating from the electron beam transmitting through the mask pattern of the mask in an inspection of the mask. The SEM thereby captures an image of the mask pattern on the lower face of the mask. Thus, the mask inspection can be performed using an electron beam intended for use in proximity exposure in the electron beam proximity exposure apparatus.
摘要翻译：掩模检查装置被结合到电子束接近曝光装置中，其中掩模布置在晶片附近，并且通过用电子束扫描掩模将形成在掩模上的掩模图案转移到晶片上的抗蚀剂层上。掩模检查装置包括布置在晶片台上的扫描电子显微镜（SEM）和移动晶片台的载物台驱动装置，使得SEM的电子检测器可以接收源自通过掩模图案发射的电子束的电子面具在检查面具。 SEM从而在掩模的下表面上捕获掩模图案的图像。因此，可以使用旨在用于电子束接近曝光装置中的接近曝光的电子束来进行掩模检查。

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