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11. 发明授权

US07449898B2 Method and apparatus for reviewing defects by detecting images having voltage contrast 有权
标题翻译：通过检测具有电压对比度的图像来检查缺陷的方法和装置
公开(公告)号：US07449898B2
公开(公告)日：2008-11-11
申请号：US11704228
申请日：2007-02-09
申请人： Toshifumi Honda , Takehiro Hirai
发明人： Toshifumi Honda , Takehiro Hirai
IPC分类号： G01R31/00 , G01R31/305 , G01N23/00
CPC分类号： G01R31/307 , G01R31/2884 , H01J37/265 , H01J37/28 , H01J37/304 , H01J2237/221 , H01J2237/24564 , H01J2237/2487 , H01J2237/2594 , H01J2237/2817 , H01J2237/30416
摘要： In a traditional method for automatically obtaining high-magnification images of defects by using an electron microscope for defect-reviewing of a semiconductor wafer, high-magnification images of a voltage contrast changing part are obtained in the case of defects generating voltage contrast change, this made difficult to observe defects themselves generating voltage contrast change. In the present invention, based on energy of secondary electron to be detected, after obtaining two types of images, namely an image making voltage contrast conspicuous easily, and an image not making it easily, and acquiring a shape change area adjacent to a voltage contrast change area based on this area as a defect location, a high-magnification image can automatically be obtained.
摘要翻译：在通过使用电子显微镜自动获得高倍率图像的传统方法中，通过使用电子显微镜对半导体晶片进行缺陷检查，在产生电压对比度变化的缺陷的情况下，获得电压对比度变化部分的高倍率图像，难以观察缺陷本身产生电压对比度变化。在本发明中，基于被检测的二次电子的能量，在获得两种类型的图像之后，即容易形成明显的图像形成电压对比度，以及不容易进行图像的图像，并且获取与电压对比相邻的形状变化区域基于该区域的变化区域作为缺陷位置，可以自动获得高倍率图像。

12. 发明授权

US07435954B2 Electron microscope, methods to determine the contact point and the contact of the probe 失效
标题翻译：电子显微镜，确定探针的接触点和接触的方法
公开(公告)号：US07435954B2
公开(公告)日：2008-10-14
申请号：US11459359
申请日：2006-07-23
申请人： Cheng-Hsun Nien , Chuen-Horng Tsai , Kun-Ying Shin , Wen-Bin Jian
发明人： Cheng-Hsun Nien , Chuen-Horng Tsai , Kun-Ying Shin , Wen-Bin Jian
IPC分类号： H01J37/26 , H01J37/20
CPC分类号： G01R31/307 , H01J2237/2594
摘要： An electron microscope suitable for observing at least one sample is provided. The sample has at least one testing area, and a material of the sample on the testing area is semiconductive or conductive. The electron microscope includes a stage, an electron gun, and at least one probe. The stage is suitable for carrying the sample and the sample is not electrically grounded. The electron gun is suitable for generating an electron beam and accumulating charges on the sample. When the probe contacts with the testing area, the image contrast of the testing area will change. The current through the probe will also change upon contact. Methods have been provided based on these principles to determine “when” and “where” the probe starts to contact the sample surface inside an electron microscope.
摘要翻译：提供适用于观察至少一个样品的电子显微镜。样品具有至少一个测试区域，测试区域上的样品材料是半导体或导电的。电子显微镜包括载物台，电子枪和至少一个探针。该阶段适用于携带样品，样品不接地。电子枪适用于产生电子束并在样品上积累电荷。当探头与测试区域接触时，测试区域的图像对比度将发生变化。通过探头的电流也将随接触而改变。已经基于这些原理提供了用于确定探针在电子显微镜内开始与样品表面接触的“何时”和“在哪里”的方法。

13. 发明授权

US07375538B2 Method of inspecting pattern and inspecting instrument 失效
标题翻译：检查模式和检验仪器的方法
公开(公告)号：US07375538B2
公开(公告)日：2008-05-20
申请号：US11166231
申请日：2005-06-27
申请人： Mari Nozoe
发明人： Mari Nozoe
IPC分类号： G01R31/305
CPC分类号： H01J37/222 , G01R31/307 , H01J37/256 , H01J37/263 , H01J37/265 , H01J37/266 , H01J2237/043 , H01J2237/24564 , H01J2237/2594 , H01J2237/2813 , H01J2237/2817 , H01J2237/304
摘要： Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.
摘要翻译：电子束在连接点成为向后偏置的状态下以预定间隔在步骤中照射到晶片，并且监视在向后偏置中减轻电荷的时间段的特性差。结果，在比正常部分短的时间段内产生结漏电的位置处的电荷被减轻，因此在正常部分和失效部分之间产生电位差，并且在潜在对比图像中观察到电荷作为亮度的差异。通过连续重复获取图像的操作，实时执行图像处理并存储失败部分的位置和亮度，可以执行指定区域的自动检查。故障部分的图像，亮度和分布信息在检查后自动保存并输出。

14. 发明授权

US07372028B2 Sample electrification measurement method and charged particle beam apparatus 有权
公开(公告)号：US07372028B2
公开(公告)日：2008-05-13
申请号：US11429237
申请日：2006-05-08
申请人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
发明人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： H01J37/265 , G01N23/2251 , H01J37/21 , H01J37/244 , H01J37/28 , H01J2237/0041 , H01J2237/216 , H01J2237/244 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices.To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.

15. 发明授权

US07170056B2 Methodology and apparatus for leakage detection 有权
标题翻译：泄漏检测方法和装置
公开(公告)号：US07170056B2
公开(公告)日：2007-01-30
申请号：US11025197
申请日：2004-12-29
申请人： Dmirty Shur , Alexander Kadyshevitch
发明人： Dmirty Shur , Alexander Kadyshevitch
IPC分类号： H01J37/256 , G01N23/225
CPC分类号： G01R31/307 , G01N23/225 , H01J2237/2594
摘要： A method for measuring leakage through a dielectric layer of a semiconductor device on a wafer, including irradiating the dielectric layer with a charged particle beam having a beam current. The irradiation generates a wafer current having a relation to the beam current in a selected range of the beam current. The method further includes determining a boundary value of the beam current at which the relation is not satisfied, and determining a leakage current through the dielectric layer in response to the boundary value.
摘要翻译：一种用于测量通过晶片上的半导体器件的电介质层的泄漏的方法，包括用具有束电流的带电粒子束照射介电层。照射产生在束电流的选定范围内具有与束电流关系的晶片电流。该方法还包括确定不满足关系的束电流的边界值，以及响应于边界值确定通过电介质层的漏电流。

16. 发明申请

US20020149381A1 Voltage contrast method and apparatus for semiconductor inspection using low voltage particle beam 有权
标题翻译：使用低电压粒子束的电压对比方法和半导体检测装置
公开(公告)号：US20020149381A1
公开(公告)日：2002-10-17
申请号：US10033845
申请日：2001-12-27
发明人： Chiwoei Wayne Lo , Kenichi Kanai
IPC分类号： G01R031/305
CPC分类号： G01R31/307 , H01J2237/2594 , H01J2237/2817 , Y10S977/849
摘要： Defects in a patterned substrate are detected by inspection with a charged particle beam inspection tool which generates an image of a portion of the patterned substrate and compares the image with a reference in order to identify any defects in the patterned substrate. Parameters of the tool are optimized to improve image uniformity and contrast, particularly voltage contrast. Prior to imaging an area of the substrate, the tool charges an area surrounding the image area to eliminate or reduce the effects caused by asymmetrical charging in the surrounding area. The tool alternates between charging the surrounding area and imaging the image area to produce a plurality of images of the image area, which are then averaged. The result is a highly uniform image with improved contrast for accurate defect detection.
摘要翻译：通过用带电粒子束检查工具进行检查来检测图案化衬底中的缺陷，其产生图案化衬底的一部分的图像，并将图像与参考值进行比较，以便识别图案化衬底中的任何缺陷。该工具的参数被优化，以提高图像的均匀性和对比度，特别是电压对比度。在对基板的区域进行成像之前，工具对图像区域周围的区域进行充电以消除或减少由周围区域中的不对称充电引起的影响。该工具在对周围区域充电并对图像区域进行成像之间交替产生图像区域的多个图像，然后将其平均。结果是高度均匀的图像，具有改进的对比度，用于精确的缺陷检测。

17. 发明授权

US06344750B1 Voltage contrast method for semiconductor inspection using low voltage particle beam 有权
标题翻译：使用低电压粒子束进行半导体检测的电压对比方法
公开(公告)号：US06344750B1
公开(公告)日：2002-02-05
申请号：US09227395
申请日：1999-01-08
申请人： Chiwoei Wayne Lo , Kenichi Kanai
发明人： Chiwoei Wayne Lo , Kenichi Kanai
IPC分类号： G01R31305
CPC分类号： G01R31/307 , H01J2237/2594 , H01J2237/2817 , Y10S977/849
摘要： Defects in a patterned substrate are detected by inspection with a charged particle beam inspection tool which generates an image of a portion of the patterned substrate and compares the image with a reference in order to identify any defects in the patterned substrate. Parameters of the tool are optimized to improve image uniformity and contrast, particularly voltage contrast. Prior to imaging an area of the substrate, the tool charges an area surrounding the image area to eliminate or reduce the effects caused by asymmetrical charging in the surrounding area. The tool alternates between charging the surrounding area and imaging the image area to produce a plurality of images of the image area, which are then averaged. The result is a highly uniform image with improved contrast for accurate defect detection.
摘要翻译：通过用带电粒子束检查工具进行检查来检测图案化衬底中的缺陷，其产生图案化衬底的一部分的图像，并将图像与参考值进行比较，以便识别图案化衬底中的任何缺陷。该工具的参数被优化，以提高图像的均匀性和对比度，特别是电压对比度。在对基板的区域进行成像之前，工具对图像区域周围的区域进行充电以消除或减少由周围区域中的不对称充电引起的影响。该工具在对周围区域充电并对图像区域进行成像之间交替产生图像区域的多个图像，然后将其平均。结果是高度均匀的图像，具有改进的对比度，用于精确的缺陷检测。

18. 发明授权

US5614833A Objective lens with large field deflection system and homogeneous large area secondary electron extraction field 失效
标题翻译：具有大场偏转系统和均匀大面积二次电子提取场的物镜
公开(公告)号：US5614833A
公开(公告)日：1997-03-25
申请号：US435330
申请日：1995-05-05
申请人： Steven D. Golladay
发明人： Steven D. Golladay
IPC分类号： G01Q30/02 , G01R31/307 , G21K1/093 , H01J37/26 , G01R31/305
CPC分类号： G21K1/093 , G01R31/307 , H01J37/268 , H01J2237/047 , H01J2237/2594
摘要： A method of noncontact testing and an electron optical system includes an electron source for producing a high energy electron beam, a retarding field objective lens system for receiving and focussing the high energy electron beam to produce a focussed low energy electron beam, and a magnetic deflector for deflecting the focussed low energy electron beam to the sample, thereby to expose the sample to the low energy electron beam, and simultaneously maintaining a predetermined spot size of the beam. The retarding field objective lens system includes a device for retarding electrons in the low energy electron beam directed to the sample and for accelerating electrons, emitted by the sample upon being irradiated by the low energy electron beam.
摘要翻译：非接触测试方法和电子光学系统包括用于产生高能电子束的电子源，用于接收和聚焦高能电子束以产生聚焦低能电子束的延迟场物镜系统，以及磁偏转器用于将聚焦的低能电子束偏转到样品，从而将样品暴露于低能电子束，同时保持光束的预定光斑尺寸。延迟场物镜系统包括用于延迟针对样品的低能电子束中的电子的装置，并用于加速被低能电子束照射时样品发射的电子。

19. 发明授权

US11902665B2 Automated application of drift correction to sample studied under electron microscope 有权
公开(公告)号：US11902665B2
公开(公告)日：2024-02-13
申请号：US17585222
申请日：2022-01-26
申请人： Protochips, Inc.
发明人： Franklin Stampley Walden, II , John Damiano, Jr. , David P. Nackashi , Daniel Stephen Gardiner , Mark Uebel , Alan Philip Franks , Benjamin Jacobs , Joshua Brian Friend , Katherine Elizabeth Marusak , Nelson L Marthe, Jr. , Benjamin Bradshaw Larson
IPC分类号： G01B11/16 , H04N23/695 , G06T7/33 , G06T7/215 , H01J37/20
CPC分类号： H04N23/695 , G06T7/215 , G06T7/337 , H01J37/20 , G06T2207/10061 , H01J2237/2594
摘要： Methods and systems for calibrating a transmission electron microscope are disclosed. A fiducial mark on the sample holder is used to identify known reference points so that a current collection area and a through-hole on the sample holder can be located. A plurality of beam current and beam area measurements are taken, and calibration tables are extrapolated from the measurements for a full range of microscope parameters. The calibration tables are then used to determine electron dose of a sample during an experiment at a given configuration.

20. 发明申请

US20150323583A1 METHOD FOR DETECTING AN ELECTRICAL DEFECT OF CONTACT/VIA PLUGS 有权
标题翻译：检测接触电极缺陷的方法
公开(公告)号：US20150323583A1
公开(公告)日：2015-11-12
申请号：US14275437
申请日：2014-05-12
申请人： MACRONIX International Co., Ltd.
发明人： Hsiang-Chou Liao , Tuung Luoh , Ling-Wuu Yang , Ta-Hone Yang , Kuang-Chao Chen
IPC分类号： G01R31/04 , G01R31/305 , H01J37/28 , H01J37/22 , H01J37/244
CPC分类号： G01R31/04 , G01R31/305 , H01J37/222 , H01J37/244 , H01J37/28 , H01J2237/049 , H01J2237/063 , H01J2237/221 , H01J2237/24592 , H01J2237/2594 , H01J2237/28 , H01J2237/2817 , H01L22/12 , H01L22/14
摘要： A method for detecting an electrical defect of contact/via plugs is provided. In the method, the contact/via plugs are monitored by an electron-beam (E-Beam) inspection tool to capture an image with a VC (voltage contrast) difference, and then an image extraction is performed on the image with the VC difference, wherein the image extraction is based on Target gray level/back ground gray level. The extracted image is contrasted with a layout design base to obtain a blind contact or Quasi-blind issue of contact/via plugs. A grayscale value of the VC difference having the blind contact or Quasi-blind issue is compared with a determined range of grayscale value to determine whether the VC difference is abnormal.
摘要翻译：提供一种用于检测接触/通孔的电气缺陷的方法。在该方法中，通过电子束（E-Beam）检查工具来监视接触/通孔塞以捕获具有VC（电压对比度）差异的图像，然后对具有VC差异的图像执行图像提取，其中所述图像提取基于目标灰度/背景灰度级。提取的图像与布局设计基础形成对照，以获得接触/通孔插头的盲接或准盲问题。将具有盲接或准盲问题的VC差的灰阶值与确定的灰度值范围进行比较，以确定VC差异是否异常。

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