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11. 发明授权

US07955432B2 Phase modulation device, phase modulation device fabrication method, crystallization apparatus, and crystallization method 失效
标题翻译：相位调制装置，相位调制装置制造方法，结晶装置和结晶方法
公开(公告)号：US07955432B2
公开(公告)日：2011-06-07
申请号：US11523567
申请日：2006-09-20
申请人： Hiroyuki Ogawa , Masato Hiramatsu
发明人： Hiroyuki Ogawa , Masato Hiramatsu
IPC分类号： C30B1/02
CPC分类号： G02B26/06 , B23K26/066 , G02B5/1857 , G02B5/1871 , G03F1/34 , H01L21/02422 , H01L21/02532 , H01L21/0268 , H01L21/02686
摘要： A phase shifter which modulates the phase of incident light has a light-transmitting substrate such as a glass substrate, and a phase modulator such as a concavity and convexity pattern which is formed on the laser beam incident surface of the light-transmitting substrate and modules the phase of incident light. A light-shielding portion which shields light in the peripheral portion where the optical intensity distribution decreases of the phase modulator is formed on the laser beam incident surface or exit surface of the phase shifter, thereby shielding the peripheral light in the irradiation surface of the incident laser beam.
摘要翻译：调制入射光的相位的移相器具有诸如玻璃基板的透光基板和形成在透光基板和模块的激光入射表面上的诸如凹凸图案的相位调制器入射光的相位。在移相器的激光入射面或出射面上形成遮光部，该遮光部遮挡相位调制器的光强度分布下降的周边部分的光，从而屏蔽入射的照射面的周围光激光束。

12. 发明授权

US07892703B2 CPL mask and a method and program product for generating the same 有权
标题翻译： CPL掩码和用于生成CPL掩码的方法和程序产品
公开(公告)号：US07892703B2
公开(公告)日：2011-02-22
申请号：US11501916
申请日：2006-08-10
申请人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke , Jung Chul Park , Thomas Laidig
发明人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke , Jung Chul Park , Thomas Laidig
IPC分类号： G03F1/00 , G03F7/00
CPC分类号： G03F1/34 , G03F1/32
摘要： A method of generating a mask for printing a pattern including a plurality of features. The method includes the steps of obtaining data representing the plurality of features; and forming at least one of the plurality of features by etching a substrate to form a mesa and depositing a chrome layer over the entire upper surface of the mesa, where said mesa has a predetermined height.
摘要翻译：一种生成用于打印包括多个特征的图案的掩模的方法。该方法包括获取表示多个特征的数据的步骤; 以及通过蚀刻基底以形成台面并在所述台面的整个上表面上沉积铬层，形成所述多个特征中的至少一个，其中所述台面具有预定高度。

13. 发明授权

US07846643B1 Method and system for providing a structure in a microelectronic device using a chromeless alternating phase shift mask 有权
标题翻译：在使用无铬交替相移掩模的微电子器件中提供结构的方法和系统
公开(公告)号：US07846643B1
公开(公告)日：2010-12-07
申请号：US11934599
申请日：2007-11-02
申请人： Hai Sun , Winnie Yu , Hongping Yuan , Yizhong Wang , Xianzhong Zeng
发明人： Hai Sun , Winnie Yu , Hongping Yuan , Yizhong Wang , Xianzhong Zeng
IPC分类号： G03F1/00
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , G03F1/30 , G03F1/34
摘要： A method and system for providing a microelectric device, such as a magnetoresistive read sensor are described. The method and system include providing a mask layer on the microelectric device. The method and system further include exposing the mask layer to provide a mask. A portion of the mask covers a portion of the microelectric device. The step of exposing the mask layer further includes utilizing a chromeless alt-phase shift mask for providing the portion of the mask.
摘要翻译：描述了一种用于提供诸如磁阻读取传感器的微电子装置的方法和系统。该方法和系统包括在微电子器件上提供掩模层。该方法和系统还包括曝光掩模层以提供掩模。掩模的一部分覆盖微电子器件的一部分。暴露掩模层的步骤进一步包括利用无铬替代相位掩模来提供掩模的该部分。

14. 发明授权

US07816061B2 Lithography masks for improved line-end patterning 有权
标题翻译：光刻面具
公开(公告)号：US07816061B2
公开(公告)日：2010-10-19
申请号：US11820420
申请日：2007-06-19
申请人： Richard Schenker , Swaminathan Sivakumar , Paul Nyhus , Sven Henrichs
发明人： Richard Schenker , Swaminathan Sivakumar , Paul Nyhus , Sven Henrichs
IPC分类号： G03F1/00 , H01L21/00
CPC分类号： G03F1/34 , G03F1/32 , G03F1/36
摘要： In one embodiment, a mask for use in semiconductor processing comprises a first region formed from a first material that is primarily opaque, a second region formed from a second material that is primarily transmissive, and a third region in which at least a portion of the second material is removed to generate a phase shift in radiation applied to the mask.
摘要翻译：在一个实施例中，用于半导体处理的掩模包括由主要是不透明的第一材料形成的第一区域，由主要透射的第二材料形成的第二区域，以及第三区域，其中至少一部分第二材料被去除以产生施加到掩模的辐射的相移。

15. 发明授权

US07811723B2 Phase-shift mask and method for forming a pattern 有权
标题翻译：相移掩模和形成图案的方法
公开(公告)号：US07811723B2
公开(公告)日：2010-10-12
申请号：US12128617
申请日：2008-05-29
申请人： Kuo-Kuei Fu , Yuan-Hsun Wu , Ya-Chih Wang
发明人： Kuo-Kuei Fu , Yuan-Hsun Wu , Ya-Chih Wang
IPC分类号： G03F1/00
CPC分类号： G03F1/34 , G03F1/28 , G03F7/2022
摘要： A phase-shift mask for forming a pattern includes a glass substrate and a pattern, a first phase-shift region, a second phase-shift region and a third phase-shift region on the glass substrate. The first phase-shift region and the second phase-shift region are alternately arranged and the third phase-shift regions are formed at the terminal ends of the first phase-shift region.
摘要翻译：用于形成图案的相移掩模包括在玻璃基板上的玻璃基板和图案，第一相移区域，第二相移区域和第三相移区域。交替布置第一相移区域和第二相移区域，并且在第一相移区域的末端形成第三相移区域。

16. 发明申请

US20100248093A1 Reticle Constructions 有权
标题翻译：标线结构
公开(公告)号：US20100248093A1
公开(公告)日：2010-09-30
申请号：US12797474
申请日：2010-06-09
申请人： Baorui Yang
发明人： Baorui Yang
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/29 , G03F1/34
摘要： The invention includes reticle constructions and methods of forming reticle constructions. In a particular aspect, a method of forming a reticle includes provision of a reticle substrate having a defined main-field region and a defined boundary region. The substrate has a relatively transparent base and a relatively opaque material over the base. A thickness of the relatively opaque material of the main-field region is reduced relative to a thickness of the relatively opaque material of the boundary region. A reticle construction of the present invention can comprise a relatively transparent base, and a relatively opaque material over the base. The construction can have a defined main-field region and a defined boundary region, and the relatively opaque material of the main-field region can have a reduced thickness relative to the relatively opaque material of the boundary region.
摘要翻译：本发明包括掩模版结构和形成掩模版结构的方法。在特定方面，形成掩模版的方法包括提供具有限定的主场区域和限定的边界区域的掩模版衬底。基底在基底上具有相对透明的基部和相对不透明的材料。主场区域的相对不透明材料的厚度相对于边界区域的相对不透明材料的厚度减小。本发明的掩模版结构可以包括相对透明的基底和在基底上的相对不透明的材料。该结构可以具有限定的主场区域和限定的边界区域，并且主场区域的相对不透明的材料可以相对于边界区域的相对不透明的材料具有减小的厚度。

17. 发明申请

US20100159368A1 OPTICALLY SEMITRANSMISSIVE FILM, PHOTOMASK BLANK AND PHOTOMASK, AND METHOD FOR DESIGNING OPTICALLY SEMITRANSMISSIVE FILM 有权
标题翻译：光学SEMITRANSMISSIC FILM，PHOTOMASK BLANK和PHOTOMASK，以及设计光学透射电影的方法
公开(公告)号：US20100159368A1
公开(公告)日：2010-06-24
申请号：US12632103
申请日：2009-12-07
申请人： Yuki SHIOTA , Osamu Nozawa
发明人： Yuki SHIOTA , Osamu Nozawa
IPC分类号： G03F1/00
CPC分类号： G03F1/26 , G03F1/32 , G03F1/34 , G03F1/54
摘要： The present invention provides an optically semitransmissive film that has a near-zero phase shift, has a desired transmissivity, and is relatively thin; a novel phase-shift mask that uses the optically semitransmissive film; a photomask blank that can [be used to] manufacture the phase-shift mask; and a method for designing the optically semitransmissive film. The film is formed on a translucent substrate and transmits a portion of light having a desired wavelength λ, wherein the film has at least one phase-difference reduction layer that fulfills the following functions. Specifically, the phase-difference reduction layer is a layer that has a refractive index n and a thickness d that satisfy the expression 0
摘要翻译：本发明提供一种光学半透射膜，其具有接近零的相移，具有期望的透射率，并且相对较薄; 一种使用光学半透射膜的新型相移掩模; 可以[用于]制造相移掩模的光掩模坯料; 以及用于设计光学半透射膜的方法。膜形成在透光性基板上，透过具有期望波长λ的光的一部分，其中，膜具有满足以下功能的至少一个相位差减少层。具体地说，相位差减少层是折射率n和厚度d满足表达式0

18. 发明申请

US20100086877A1 PATTERN FORMING METHOD AND PATTERN FORM 审中-公开
标题翻译：图案形成方法和图案形式
公开(公告)号：US20100086877A1
公开(公告)日：2010-04-08
申请号：US12635214
申请日：2009-12-10
申请人： Munehisa Soma , Gaku Suzuki
发明人： Munehisa Soma , Gaku Suzuki
IPC分类号： G03F7/20
CPC分类号： B29C33/42 , B82Y10/00 , B82Y40/00 , G03F1/26 , G03F1/34 , G03F7/0002 , H01L21/0273 , Y02P70/605
摘要： One embodiment of the present invention is a pattern forming method for forming a fine three-dimensional structural pattern, including: forming a resist material film on a substrate having a projecting pattern on a step in such a manner as to cover at least a marginal portion of the projecting pattern such that the resist material film is heaped on the projecting pattern in conformity with the step; reducing the heaped resist material film formed by first etching until the marginal portion of the projecting pattern is exposed from an edge of the heaped resist material film; and forming an upper projecting pattern according to the projecting pattern in a self-aligning manner by second etching on the marginal portion of the exposed projecting pattern by using the reduced resist material film as a mask.
摘要翻译：本发明的一个实施方案是一种用于形成精细三维结构图案的图案形成方法，包括：在具有突出图案的基板上形成抗蚀剂材料膜，以至少覆盖边缘部分的突出图案，使得抗蚀剂材料膜与该台阶一致地堆叠在突出图案上; 减少由第一蚀刻形成的堆积的抗蚀剂材料膜，直到突出图案的边缘部分从堆积的抗蚀剂材料膜的边缘露出; 并且通过使用还原的抗蚀剂材料膜作为掩模，通过对暴露的突出图案的边缘部分进行第二次蚀刻，以自对准的方式，根据投影图案形成上部突出图案。

19. 发明授权

US07667216B2 Method of achieving CD linearity control for full-chip CPL manufacturing 有权
标题翻译：实现全芯片CPL制造的CD线性控制的方法
公开(公告)号：US07667216B2
公开(公告)日：2010-02-23
申请号：US11708029
申请日：2007-02-20
申请人： Doug Van Den Broeke , Chungwei Hsu , Jang Fung Chen
发明人： Doug Van Den Broeke , Chungwei Hsu , Jang Fung Chen
IPC分类号： G01N21/86 , G03F1/00 , G06F17/50
CPC分类号： G03F1/36 , G03F1/34
摘要： A method of generating masks for printing a pattern including a plurality of features having varying critical dimensions. The method includes the steps of: (1) obtaining data representing the pattern; (2) defining a plurality of distinct zones based on the critical dimensions of the plurality of features; (3) categorizing each of the features into one of the plurality of distinct zones; and (4) modifying the mask pattern for each feature categorized into a predefined distinct zone of the plurality of distinct zones.
摘要翻译：一种生成用于打印包括具有不同临界尺寸的多个特征的图案的掩模的方法。该方法包括以下步骤：（1）获取表示图案的数据; （2）基于所述多个特征的临界尺寸定义多个不同区域; （3）将每个特征分类为多个不同区域中的一个; 以及（4）对于分类为所述多个不同区域中的预定义的不同区域的每个特征修改所述掩模图案。

20. 发明申请

US20090246645A1 PHOTOMASK BLANK, PHOTOMASK, AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译： PHOTOMASK BLANK，PHOTOMASK及其制造方法
公开(公告)号：US20090246645A1
公开(公告)日：2009-10-01
申请号：US12414198
申请日：2009-03-30
申请人： Osamu NOZAWA
发明人： Osamu NOZAWA
IPC分类号： G03F1/00
CPC分类号： G03F1/34 , G03F1/80
摘要： A photomask blank is for manufacturing a phase shift mask having a light-transmitting substrate provided with a phase shift portion adapted to give a predetermined phase difference to transmitted exposure light. The phase shift portion is a dug-down part that is dug down from a surface of the light-transmitting substrate to a digging depth adapted to produce the predetermined phase difference with respect to exposure light transmitted through the light-transmitting substrate at a portion where the phase shift portion is not provided. The photomask blank includes, on the digging-side surface of the light-transmitting substrate, an etching mask film that is made of a material being dry-etchable with a chlorine-based gas, but not dry-etchable with a fluorine-based gas, and serves as an etching mask at least until, when forming the dug-down part by dry etching, the dry etching reaches the digging depth. The photomask blank further includes, on a surface of the etching mask film, a light-shielding film that is made of a material mainly containing tantalum and has a thickness so as to be removable during the dry etching for forming the dug-down part of the light-transmitting substrate.
摘要翻译：光掩模坯件用于制造具有透光基板的相移掩模，该透光基板设置有适于给予透射曝光光的预定相位差的相移部分。相移部分是从透光基板的表面向下挖掘的挖掘部分，其适于相对于透过透光基板的曝光来产生预定的相位差，不设置相移部。光掩模坯料在透光基板的挖掘侧表面上包括由用氯基气体可干蚀刻的材料制成的蚀刻掩模膜，但不能用氟基气体进行干法蚀刻并且至少在通过干法蚀刻形成所述下陷部分时，至少形成蚀刻掩模，所述干蚀刻达到所述挖掘深度。光掩模坯料还包括在蚀刻掩模膜的表面上的遮光膜，其由主要包含钽的材料制成，并且具有在干法蚀刻期间能够移除的厚度，以形成下垂部分的透光基板。

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