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11. 发明授权

US5115118A Heat-treatment furnace 失效
标题翻译：热处理炉
公开(公告)号：US5115118A
公开(公告)日：1992-05-19
申请号：US622481
申请日：1990-12-05
申请人： Hiromi Harada , Toshihisa Nozawa
发明人： Hiromi Harada , Toshihisa Nozawa
IPC分类号： H01L21/22 , C30B31/10 , C30B31/12 , F27B17/00
CPC分类号： C30B31/12 , C30B31/10 , F27B17/0025
摘要： A heat-treatment furnace comprising a process tube for containing an object of treatment, a heater surrounding the process tube, and an infrared impermeable member located on the process tube side of the heater and at least one the side of an open end of the process tube through which the object of treatment is carried in and out.
摘要翻译：一种热处理炉，其包括用于容纳处理对象的处理管，围绕处理管的加热器和位于加热器的处理管侧的红外不可渗透构件以及该处理的开口端的至少一侧待处理对象通过其进出的管。

12. 发明授权

US4999228A Silicon carbide diffusion tube for semi-conductor 失效
标题翻译：半导体碳化硅扩散管
公开(公告)号：US4999228A
公开(公告)日：1991-03-12
申请号：US346736
申请日：1989-05-03
申请人： Fukuji Matsumoto , Yoshio Tawara , Michio Hayashi
发明人： Fukuji Matsumoto , Yoshio Tawara , Michio Hayashi
IPC分类号： C04B35/573 , C30B31/10
CPC分类号： C30B31/10 , C04B35/573 , Y10T428/131
摘要： Disclosed is a silicon carbide type diffusion tube comprising a diffusion tube base made of reaction-sintered silicon carbide having an iron concentration of 20 ppm or below and a density of 3.0 g/cm.sup.3 or over, and a silicon carbide layer consisting of a high-purity silicon carbide film having an iron concentration of 5 ppm or below deposited on the inner surface of the tube base and a silicon carbide type diffusion tube comprising a diffusion tube base made of reaction-sintered silicon carbide, and a silicon carbide layer consisting of a Si-depleted layer formed in the inner wall of the reaction-sintered silicon carbide tube base and a high-purity silicon carbide film deposited on the Si-depleted layer, said silicon carbide film having a thickness of more than 0.5 mm.

13. 发明授权

US4943234A Procedure and equipment for the thermal treatment of semiconductor materials 失效
标题翻译：半导体材料热处理的程序和设备
公开(公告)号：US4943234A
公开(公告)日：1990-07-24
申请号：US314460
申请日：1989-02-23
申请人： Heinrich Sohlbrand
发明人： Heinrich Sohlbrand
IPC分类号： H01L21/22 , C30B31/10 , C30B31/12 , C30B31/14 , H01L21/31
CPC分类号： C30B31/14 , C30B31/10 , C30B31/12 , Y10S414/14
摘要： The invention proposes a process and equipment for the thermal treatment of semiconductor materials which contains an isothermal, all-round heated process tube in a so-called "closed-tube" process using a compact construction of the furnace, whereby a defined process gas atmosphere is present in the process chamber from the very start of the process and a reverse diffusion is prevented. A double-tube system is used here with an adjustable interspace rinsing, i.e. the use of the so-called "rapid cassette" in cold blowing. Applications for the invention are in particular the oxidation, diffusion, deposition and tempering of semiconductor discs.
摘要翻译：本发明提出了一种用于热处理半导体材料的方法和设备，该方法和设备在使用炉的紧凑结构的所谓“封闭管”方法中包含等温全方位加热的加工管，由此定义的工艺气体气氛从工艺的开始就存在于处理室中，并且防止反向扩散。这里使用双管系统，其中可调节的间隙冲洗，即在所谓的“快速盒”中使用冷吹。本发明的应用特别是半导体盘的氧化，扩散，沉积和回火。

14. 发明授权

US4760244A Apparatus for the treatment of semiconductor materials 失效
标题翻译：半导体材料处理装置
公开(公告)号：US4760244A
公开(公告)日：1988-07-26
申请号：US929285
申请日：1986-11-12
申请人： Jiri Hokynar
发明人： Jiri Hokynar
IPC分类号： C30B31/10 , H05B3/62
CPC分类号： C30B31/10
摘要： A system for the heat treatment and doping of semiconductor wafers or the like has a heating system which can be moved axially over a quartz pipe by means of a linear shifting means, in which quartz pipe the materials to be treated are arranged. The ambient atmosphere is at least partially removed from the quartz pipe in the process, after which the semiconductor wafers are subjected to the desired treatment atmosphere; the heated oven is thereafter moved over the quartz pipe to complete the treatment.
摘要翻译：用于半导体晶片等的热处理和掺杂的系统具有可以通过线性移动装置在石英管上轴向移动的加热系统，石英管中布置有要处理的材料。在该过程中环境气氛至少部分地从石英管中除去，之后半导体晶片经受所需的处理气氛; 然后将加热的烘箱移动到石英管上以完成处理。

15. 发明授权

US4753763A Method of manufacturing heating furnace parts 失效
标题翻译：加热炉部件的制造方法
公开(公告)号：US4753763A
公开(公告)日：1988-06-28
申请号：US685844
申请日：1984-12-24
申请人： Takashi Tanaka , Kenro Hayashi
发明人： Takashi Tanaka , Kenro Hayashi
IPC分类号： C04B35/565 , C04B35/573 , C04B35/626 , C30B31/10 , H01L21/22 , C04B41/53
CPC分类号： C30B31/10 , C04B35/565 , C04B35/573
摘要： A method of manufacturing heating furnace parts having high purity which comprises the steps of molding a raw powder mainly consisting of silicon carbide powder into a prescribed form, and subjecting the molded product to a purification treatment at a temperature ranging between 1,500.degree. and 2,100.degree. C. in an atmosphere containing a gas selected from the group consisting of halogen gas and hydrogen halide gas, and an inert gas applied as a carrier gas.
摘要翻译：一种制造高纯度的加热炉部件的方法，包括以下步骤：将主要由碳化硅粉末组成的原料粉末成型为规定形式，并在1500-2100℃的温度范围内对成型产品进行净化处理在含有选自卤素气体和卤化氢气体的气体的气氛中，以及作为载气施加的惰性气体。

16. 发明授权

US4753192A Movable core fast cool-down furnace 失效
标题翻译：移动式核心快速冷却炉
公开(公告)号：US4753192A
公开(公告)日：1988-06-28
申请号：US1445
申请日：1987-01-08
申请人： Forest S. Goldsmith , Arthur Waugh
发明人： Forest S. Goldsmith , Arthur Waugh
IPC分类号： C23C8/00 , C30B31/10 , F27B17/00 , F27D9/00 , F27D19/00
CPC分类号： C30B31/10 , C23C8/00 , F27B17/0025 , F27D19/00 , F27D9/00
摘要： One fast cool-down furnace embodiment discloses a double wall in the interspace of which a cooling air stream is flowable to provide fast cool-down of a load of wafers. The double wall embodiment is retrofittable on existing diffusion furnace, and includes a cylindrical member aligned in concentric relation with the diffusion tube by combination plenum defining and supporting manifolds. In a second embodiment, the fast cool-down furnace includes a reaction vessel and a heating core relatively movable relative to each other in such a way that in a fast cool-down condition the core and reaction vessel are spaced apart. Cooling tubes are embedded in the movable core. Fans or other aids to cooling are provided. Operation is either in a controlled cool-down mode or in a quick quench mode.
摘要翻译：一个快速冷却炉实施例公开了在其间隙中的双壁，其中冷却空气流可流动以提供晶片负载的快速冷却。双壁实施例可在现有扩散炉上改装，并且包括通过组合气室限定和支撑歧管与扩散管同心地对准的圆柱形构件。在第二实施例中，快速冷却炉包括反应容器和加热芯，其相对于彼此可相对移动，使得在快速冷却状态下，芯和反应容器间隔开。冷却管嵌入在可动芯中。提供风扇或其他冷却辅助设备。操作处于受控冷却模式或快速淬火模式。

17. 发明授权

US4367768A Refractory protective tube for the heat treatment of semiconductor components 失效
$Refractory protective tube for the heat treatment of semiconductor components$
标题翻译：用于半导体元件热处理的耐火保护管
公开(公告)号：US4367768A
公开(公告)日：1983-01-11
申请号：US122089
申请日：1980-02-19
申请人： Karl A. Schulke
发明人： Karl A. Schulke
IPC分类号： H01L21/22 , C30B25/08 , C30B31/10 , C23C13/08
CPC分类号： C30B31/10 , C30B25/08 , Y10T137/7902 , Y10T137/7922
摘要： In a refractory protective tube for the heat treatment of semiconductor components which is constricted at one end and at such constricted end is provided with a treating or working gas inlet, said tube having opposite to said gas inlet a closed end provided with a gas outlet, the improvement for the prevention of back diffusion of ambient air wherein said closed end is closed by a cover which is fastened to a holding bracket which is movably suspended from the tube.
摘要翻译：在用于热处理半导体部件的耐火保护管中，所述半导体部件在一端被收缩并且在这种收缩端处设置有处理或工作气体入口，所述管与所述气体入口相对，具有设置有气体出口的封闭端，防止环境空气的背面扩散的改进，其中所述封闭端被固定到可移动地从管中悬挂的保持支架的盖封闭。

18. 发明授权

US4345142A Directly heatable semiconductor tubular bodies 失效
标题翻译：可直接加热的半导体管状体
公开(公告)号：US4345142A
公开(公告)日：1982-08-17
申请号：US950452
申请日：1978-10-11
申请人： Wolfgang Dietze
发明人： Wolfgang Dietze
IPC分类号： C01B33/02 , C01B33/035 , C23C16/01 , C23C16/22 , C23C18/12 , C30B31/10 , C30B31/12 , F27B5/14 , H01C1/14 , H05B3/10
CPC分类号： C23C16/22 , C23C16/01 , C30B31/10 , C30B31/12 , Y10T428/1393
摘要： Directly heatable tubular semiconductor bodies are produced by pyrolytically depositing a continuous layer of silicon or silicon carbide from a thermally decomposable silicon compound onto a heated graphite mandrel, non-destructively removing the so-deposited tubular body from the mandrel, applying a dopant-containing lacquer or the like onto select outer surface portions of such tubular body and subjecting the so-coated tubular body to diffusion conditions sufficient to dope the select outer body portions of the body and render such body directly heatable via an applied electrical current.
摘要翻译：通过将热可分解的硅化合物的连续的硅或碳化硅层热解沉积到加热的石墨心轴上，直接可加热的管状半导体本体，不间断地从芯棒上除去所沉积的管状体，施加含掺杂剂的漆或类似物放置在这种管状体的选定的外表面部分上，并使经涂覆的管状体经受足以掺杂身体的选择外部身体部分并使得这种身体经由所施加的电流直接加热的扩散条件。

19. 发明授权

US4312294A Apparatus for thermal treatment of semiconductors 失效
标题翻译：半导体热处理装置
公开(公告)号：US4312294A
公开(公告)日：1982-01-26
申请号：US132735
申请日：1980-03-24
申请人： Ryozo Satoh
发明人： Ryozo Satoh
IPC分类号： H01L21/205 , C23C16/455 , C30B25/08 , C30B31/10 , H01L21/22 , C23C13/08
CPC分类号： C30B25/08 , C23C16/455 , C30B31/10
摘要： In an apparatus for thermal treatment of semiconductors in a treating gas, a cylindrical plug extends into a treating tube so as to substantially fill the treating tube, as far as the cylindrical plug extends into the treating tube, except for a clearance provided around the cylindrical plug, between the cylindrical plug and the treating tube, whereby formation of convection currents in the treating gas is prevented. The cylindrical plug may be separate from a sealing closure, integral with the sealing closure, or integral with the treating tube. If integral with the treating tube, the cylindrical plug has a tubular portion and a bottom portion, which plugs the tubular portion but is removable.
摘要翻译：在用于处理气体中半导体热处理的装置中，圆柱形塞子延伸到处理管中，以便基本上填充处理管，只要圆柱塞延伸到处理管中，除了围绕圆筒形的间隙插塞在圆柱塞和处理管之间，从而防止处理气体中的对流电流的形成。圆柱形塞子可以与密封盖分离，密封封闭件与密封封闭件一体，或与处理管件成一体。如果与处理管成一体，则圆柱形塞子具有管状部分和底部部分，其堵塞管状部分但是是可移除的。

20. 发明授权

US4278422A Diffusion tube support collar 失效
标题翻译：扩散管支撑领
公开(公告)号：US4278422A
公开(公告)日：1981-07-14
申请号：US108553
申请日：1979-12-31
申请人： David L. Thompson
发明人： David L. Thompson
IPC分类号： C30B31/10 , F27D11/02 , H01L21/22 , F27B7/00 , B65D53/00 , F02F11/00
CPC分类号： F27D11/02 , C30B31/10
摘要： A collar for supporting and positioning a diffusion tube in a furnace used in the manufacture of semiconductors, integrated circuits and the like, is disclosed. The collar has a resilient core and an outer cover enclosing the core. The core and the cover are made of materials which readily withstand the normal operating temperatures of the furnace. The collar is dimensioned to tightly fit around a circumference of the diffusion tube, and to fit within an aperture provided in a support block of the furnace. The collar permits precise positioning of the diffusion tube relative to a helical heating coil provided in the furnace.
摘要翻译：公开了一种用于在用于半导体，集成电路等的制造中使用的炉中支撑和定位扩散管的套环。套环具有弹性芯和封闭芯的外盖。芯和盖由易于承受炉的正常操作温度的材料制成。套环的尺寸被设计成紧密地配合在扩散管的圆周周围，并且装配在设置在炉的支撑块中的孔内。套环允许扩散管相对于设置在炉中的螺旋加热线圈进行精确定位。

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