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11. 发明申请

US20060124048A1 Topological crystal of transition metal chalcogenide and method of forming the same 失效
标题翻译：过渡金属硫族化物的拓扑结晶及其形成方法
公开(公告)号：US20060124048A1
公开(公告)日：2006-06-15
申请号：US10535450
申请日：2003-05-20
申请人： Satoshi Tanda , Taku Tsuneta , Yoshitoshi Okajima , Katsuhiko Inagaki , Kazuhiko Yamaya , Noriyuki Hatakenaka
发明人： Satoshi Tanda , Taku Tsuneta , Yoshitoshi Okajima , Katsuhiko Inagaki , Kazuhiko Yamaya , Noriyuki Hatakenaka
IPC分类号： H01L21/322 , C30B15/14
CPC分类号： C30B11/12 , C30B23/007 , C30B29/46
摘要： Disclosed is a transition-metal chalcogenide crystal having a topological configuration/structure. A micro-droplet of a chalcogen element, such as S, Se or Te, is condensed and circulated in suspended form in an atmosphere containing a Group IVb, Vb or VI transition metal element, such as Nb, Ta, Zr, Ti, Hf or W, together with the chalcogen element. Then, micro-whiskers of a transition metal chalcogenide formed in the atmosphere are attached onto a surface of the chalcogen-element micro-droplet by the action of a surface tension of the micro-droplet, and grown as a loop-shaped crystal wound around the surface of the micro-droplet to obtain a loop-shaped crystal having a twist of 0, π or 2 π. The crystal has a ribbon-like open or closed loop configuration. The transition-metal chalcogenide crystal with the topological loop-shaped microstructure can exhibit original properties peculiar to each transition-metal chalcogenide, and has applicability, for example, to a quantum device, such as SQUID.
摘要翻译：公开了具有拓扑结构/结构的过渡金属硫族化物晶体。硫族元素如S，Se或Te的微滴在悬浮状态下冷凝并循环在含有IVb，Vb或VI族过渡金属元素如Nb，Ta，Zr，Ti，Hf的气氛中或W，与硫属元素一起。然后，通过微滴的表面张力的作用将在大气中形成的过渡金属硫属元素化物的微晶须附着在硫族元素微滴的表面上，并以缠绕在周围的环形晶体生长微滴的表面以获得具有0，pi或2π的扭曲的环形晶体。该晶体具有带状的开环或闭环配置。具有拓扑环状微结构的过渡金属硫族化物晶体可以显示出每种过渡金属硫族化物特有的原始特性，并且具有例如量子器件（例如SQUID）的适用性。

12. 发明授权

US3852060A Formation of metal filaments by solid state reactions 失效
标题翻译：通过固体反应形成金属膜
公开(公告)号：US3852060A
公开(公告)日：1974-12-03
申请号：US35940073
申请日：1973-06-25
申请人： US INTERIOR
发明人： LEAVENWORTH H , GOLDSMITH C , DUNNING B , GABLER R
IPC分类号： B22F1/00 , B22F9/30 , C30B23/00 , B22F9/00
CPC分类号： B22F9/30 , B22F1/004 , C30B23/007 , C30B29/02 , Y10S75/952
摘要： Metal filaments are grown by solid state reactions from a matrix or matte of copper, iron and sulfur. Copper filaments, iron filaments or copper-iron duplex filaments may be produced by adjustment of temperature and growth conditions. The copper-iron duplex filaments consist of copper at one end and iron at the other with a sharp junction between the two compositions. Individual filaments are typically on the order of 1 micron in diameter and the filaments grow in bundles often about 10 microns in diameter. Growth is extremely rapid; lengths of 2 to 3 centimeters being attained in a few minutes.
摘要翻译：金属丝由铜，铁和硫的基体或无光泽的固态反应生长。可以通过调节温度和生长条件来生产铜丝，铁丝或铜 - 铁双相丝。铜 - 铁双相丝由一端的铜和另一端的铁组成，两个组合物之间具有尖锐的连接。单丝通常直径约为1微米，长丝通常以直径约10微米的束生长。增长极快; 在几分钟内达到2到3厘米的长度。

13. 发明授权

US3455724A Processes of preparing vanadium suboxide coatings 失效
标题翻译：制备氧化铝薄膜的方法
公开(公告)号：US3455724A
公开(公告)日：1969-07-15
申请号：US35806564
申请日：1964-04-07
申请人： TEEG RESEARCH INC
发明人： TEEG ROBERT O , HALLMAN ROBERT W
IPC分类号： C01G31/02 , C23C14/08 , C23C14/24 , C23C14/58 , C30B23/00 , C23C13/00
CPC分类号： C01G31/02 , C01P2004/10 , C01P2006/60 , C23C14/083 , C23C14/24 , C23C14/58 , C23C14/5806 , C23C14/5846 , C23C14/5853 , C30B23/007 , C30B29/16
摘要： Method can be used in vacuum deposition, electro-deposition and cathode sputtering and involves the vapourisation of vanadium pentoxide at 650-700 degrees C under a pressure of similar to 10-5 mm.Hg. A thin film is condensed on the substrate and this is heated in the presence of an appropriate stoichiometric amount of vanadium sesquioxide at 450-550 degrees C and 10-2 mm.Hg.

14. 发明授权

US09493890B2 Direct band gap wurtzite semiconductor nanowires 有权
标题翻译：直接带隙纤锌矿半导体纳米线
公开(公告)号：US09493890B2
公开(公告)日：2016-11-15
申请号：US14184085
申请日：2014-02-19
申请人： Technische Universiteit Eindhoven
发明人： Simone Assali , Ilaria Zardo , Jozef Everardus Maria Haverkort , Erik Petrus Antonius Maria Bakkers
IPC分类号： C30B23/04 , C30B11/12 , C30B23/00 , C30B25/00 , C30B29/40 , C30B29/44 , C30B29/60
CPC分类号： C30B11/12 , C30B23/007 , C30B25/005 , C30B29/40 , C30B29/44 , C30B29/605
摘要： Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.
摘要翻译：提供GaP和III-V GaP合金通过气相外延（VPE）在纤锌矿晶体结构中的生长。这种材料具有直接的带隙，因此与具有闪锌矿晶体结构且具有间接带隙的常规GaP和GaP合金相比，对于光电子器件更有用。

15. 发明申请

US20160075565A1 INDIUM OXIDE NANOROD AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：氧化铝纳米粒及其制造方法
公开(公告)号：US20160075565A1
公开(公告)日：2016-03-17
申请号：US14740293
申请日：2015-06-16
申请人： Kuo-Ming Hsu
发明人： Kuo-Ming Hsu
IPC分类号： C01G15/00
CPC分类号： C01G15/00 , C01P2004/16 , C30B23/007 , C30B29/16 , C30B29/60
摘要： Provided is a manufacturing method of indium oxide nanorods, including the following steps: providing a temperature furnace divided into a first zone and a second zone; putting an indium metal source in the first zone and putting a substrate in the second zone; modulating a temperature of the first zone to a first temperature and modulating a temperature of the second zone to a second temperature, wherein the first temperature is higher than the second temperature; and inputting argon and oxygen into the temperature furnace when the temperature of the first zone reaches the first temperature and the temperature of the second zone reaches the second temperature, wherein a ratio of argon and oxygen is in a range of 30:1 to 70:1 such that a plurality of indium oxide nanorods are formed on the substrate. An indium oxide nanorod is also provided.
摘要翻译：提供了一种氧化铟纳米棒的制造方法，包括以下步骤：提供分为第一区和第二区的温度炉; 在第一区域放置铟金属源，并在第二区域放置衬底; 将第一区域的温度调节到第一温度并将第二区域的温度调节到第二温度，其中第一温度高于第二温度; 以及当所述第一区域的温度达到所述第一温度并且所述第二区域的温度达到第二温度时，将氩和氧输入到所述温度炉中，其中所述氩气和氧气的比例在30:1至70:1的范围内。 1，使得在基板上形成多个氧化铟纳米棒。还提供了氧化铟纳米棒。

16. 发明申请

US20150152570A1 CONCENTRIC FLOW REACTOR 有权
标题翻译：浓缩液反应器
公开(公告)号：US20150152570A1
公开(公告)日：2015-06-04
申请号：US14403427
申请日：2013-05-24
申请人： SOL VOLTAICS AB
发明人： Greg Alcott , Martin Magnusson , Olivier Postel , Knut Deppert , Lars Samuelson , Jonas Ohlsson
IPC分类号： C30B25/00 , C30B29/40 , C30B29/62 , C30B11/12 , C30B11/00
CPC分类号： C30B25/14 , C23C16/301 , C23C16/45504 , C23C16/45519 , C30B11/003 , C30B11/006 , C30B11/12 , C30B23/007 , C30B25/005 , C30B25/025 , C30B29/06 , C30B29/40 , C30B29/403 , C30B29/42 , C30B29/60 , C30B29/62 , Y10T117/102
摘要： A gas phase nanowire growth apparatus including a reaction chamber (200), a first input and a second input (202 B, 202 A). The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires
摘要翻译：一种气相纳米线生长装置，包括反应室（200），第一输入端和第二输入端（202B，202A）。所述第一输入同心地位于所述第二输入内，并且所述第一和第二输入被配置为使得从所述第二输入端递送的第二流体在从所述第一输入端输送的第一流体与所述反应室的壁之间提供护套。可以使用催化剂颗粒的气溶胶来生长纳米线

17. 发明申请

US20120240845A1 PRODUCTION METHOD OF AN ALUMINUM NITRIDE SINGLE CRYSTAL 审中-公开
标题翻译：硝酸铝单晶的生产方法
公开(公告)号：US20120240845A1
公开(公告)日：2012-09-27
申请号：US13512627
申请日：2010-11-29
申请人： Hiroyuki Fukuyama , Masanobu Azuma , Kazuya Takada , Takeshi Hattori
发明人： Hiroyuki Fukuyama , Masanobu Azuma , Kazuya Takada , Takeshi Hattori
IPC分类号： C30B25/14 , C30B25/16
CPC分类号： C30B29/403 , C30B23/00 , C30B23/007 , C30B25/00 , C30B29/62
摘要： Disclosed is a novel method wherein an aluminum nitride single crystal having good crystallinity is efficiently and easily manufactured. The method for produsing an aluminum nitride single crystal wherein nitrogen gas is circulated in the presence of a raw material gas generation source, which generates an aluminum gas or an aluminum oxide gas, and a carbon body, and then the aluminum nitride single crystal is grown under a heating condition; characterized in that, at least a part of the carbon body does not directly contact with the raw material gas generation source, at least a part of the raw material gas generation source does not directly contact with the carbon body, the raw material gas generation source and the carbon body are positioned to make a space in which a clearance between the raw material gas generation source, which does not contact with the carbon body, and the carbon body, which does not contact with the raw material gas generation source, is 0.01 to 50 mm, and a heat temperature and a nitrogen gas flow rate are set so as to satisfy a condition for aluminum nitride deposition in a space between the raw material gas generation source, which does not contact with carbon body, and the carbon body, which does not contact with raw material gas generation source.
摘要翻译：公开了一种新颖的方法，其中具有良好结晶度的氮化铝单晶被有效且容易地制造。在生成铝气体或氧化铝气体的原料气体发生源的存在下生成氮气的氮化铝单晶的制造方法和碳体，然后生长氮化铝单晶在加热条件下其特征在于，所述碳体的至少一部分不与所述原料气体发生源直接接触，所述原料气体发生源的至少一部分不与碳体直接接触，所述原料气体产生源并且碳体被定位成使与未与碳体接触的原料气体发生源与不与原料气体发生源接触的碳体之间的间隙为0.01的空间至50mm，并且设定加热温度和氮气流量以满足与碳体不接触的原料气体发生源与碳体之间的空间中的氮化铝沉积的条件，其不与原料气体发生源接触。

18. 发明授权

US4812352A Article having surface layer of uniformly oriented, crystalline, organic microstructures 失效
标题翻译：制品具有均匀取向，结晶，有机微观结构的表层
公开(公告)号：US4812352A
公开(公告)日：1989-03-14
申请号：US899653
申请日：1986-08-25
申请人： Mark K. Debe
发明人： Mark K. Debe
IPC分类号： B05D7/24 , B32B3/10 , B32B7/00 , B32B7/02 , B32B9/00 , C23C14/12 , C23C14/20 , C23C14/58 , C30B23/00 , C30B25/00 , C30B33/00 , F24J2/48 , B32B5/00
CPC分类号： C23C14/5806 , C23C14/12 , C23C14/20 , C23C14/58 , C23C14/584 , C30B23/007 , C30B25/005 , C30B29/54 , C30B29/62 , C30B33/00 , F24J2/0488 , F24J2/485 , Y02E10/44 , Y10T428/24364 , Y10T428/24372 , Y10T428/249921 , Y10T428/25 , Y10T428/265 , Y10T428/268 , Y10T428/29 , Y10T428/31692 , Y10T428/31855
摘要： Article comprising a substrate bearing a microlayer which comprises uniformly oriented, crystalline, solid, organic microstructures and a method for preparing said article. The microstructures may be mono- or polycrystalline. In the preferred embodiment, the microstructures are of uniform shape and size.The articles can be prepared by (1) depositing a vapor of an organic compound as a thin, continuous film onto a substrate to provide a composite, and (2) annealing the composite in a vacuum sufficiently such that a physical change is induced in the orginal deposited film to form the microstructures.The microlayer can be overcoated with other materials to provide desired properties to the article. The articles of this invention are useful for many forms of light trapping, energy absorption, imaging, data transmission and storage, and gradient index applications.
摘要翻译：一种制品，其特征在于，具有含有均匀取向，结晶，固体，有机微观结构的微层的基板和制备所述制品的方法。微结构可以是单晶或多晶。在优选实施例中，微结构具有均匀的形状和尺寸。制品可以通过以下步骤制备：（1）将有机化合物的蒸气作为薄的连续膜沉积到基底上以提供复合材料，和（2）在足够的真空中使复合材料退火，使得在原始沉积膜形成微结构。微层可以用其他材料涂覆以提供所需的物品。本发明的制品可用于许多形式的光捕获，能量吸收，成像，数据传输和存储以及梯度指数应用。

19. 发明授权

US4263604A Graded gap semiconductor detector 失效
标题翻译：分级间隙半导体检测器
公开(公告)号：US4263604A
公开(公告)日：1981-04-21
申请号：US143694
申请日：1980-04-25
申请人： James D. Jensen , Richard B. Schoolar
发明人： James D. Jensen , Richard B. Schoolar
IPC分类号： C30B23/00 , C30B23/04 , H01L31/032 , H01L31/065 , H01L27/14
CPC分类号： H01L31/065 , C30B23/007 , C30B23/04 , C30B29/46 , H01L31/0324 , Y02E10/50
摘要： A variable temperature method for the preparation of single and multiple taxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide, [Pb.sub.1-w Cd.sub.w ].sub.a [S].sub.1-a where w varies between zero and fifteen hundredths, inclusive, and a=0.500.+-.0.003), deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.
摘要翻译：单相（例如，面心立方），三元铅硫族化物合金（例如，硫化铅，[Pb1-wCdw] a [S] 1-a）的单个和多个外延层的制备的可变温度方法，其中 w在不同的升华铅合金和硫族化合物源之间保持在接近热力学平衡状态下沉积在氟化钡BaF2的基底上的零和百分之零和百分之零和百分之零零零零，并且a = 0.500 +/- 0.003）。在制备过程中，衬底的温度是变化的，从而提供具有渐变组成的外延层和沿着生长方向的预定的电学和光学特性。该生长技术可用于生产红外透镜，窄带检测器和双异质结激光器。

20. 发明授权

US3775061A Apparatus for making fibers 失效
标题翻译：制造纤维的装置
公开(公告)号：US3775061A
公开(公告)日：1973-11-27
申请号：US3775061D
申请日：1965-08-19
申请人： GLASS J
发明人： GLASS J
IPC分类号： C30B23/00 , C30B25/00 , B01D9/00
CPC分类号： C30B25/005 , C30B23/007 , Y10T117/1008 , Y10T117/102
摘要： Apparatus for making crystal fibers by condensing a material from a vapor phase comprising a chamber, a vaporiser for supplying a vapor which is condensed and crystalized into fibers, heating elements around the chamber to maintain the vapor, cooling apparatus located at an exit orifice of the chamber, said cooling apparatus directing a stream of gas into the chamber to provide a cooler region where the vapor condenses to form solid fibrous materials, apparatus for applying an electrostatic charge to the growing fibers to fan out the ends of the fibers so that the ends are separated and individually exposed to the vapor, a reel for withdrawing the fibers through the exit opening, servo motor apparatus for operating the reel, an electric circuit for measuring the electrostatic charge on the fibers and actuating the reel in response thereto, and apparatus for coordinating the speed of rotation of the reel with the speed of producing fibers.
摘要翻译：用于通过冷凝来自包括室的气相的材料制造晶体纤维的装置，用于供应被冷凝并结晶成纤维的蒸气的蒸发器，围绕所述室的加热元件以保持蒸气，冷却装置位于所述冷却装置将气体流引导到所述室中以提供更冷的区域，其中所述蒸汽冷凝以形成固体纤维材料，用于向所述生长的纤维施加静电荷以扇出所述纤维的端部的装置，被分离并单独地暴露于蒸汽，用于通过出口排出纤维的卷轴，用于操作卷轴的伺服电动机装置，用于测量纤维上的静电电荷并响应于此驱动卷轴的电路，以及用于使卷轴的旋转速度与生产纤维的速度协调。

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