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1. 发明授权

US4263604A Graded gap semiconductor detector 失效
标题翻译：分级间隙半导体检测器
公开(公告)号：US4263604A
公开(公告)日：1981-04-21
申请号：US143694
申请日：1980-04-25
申请人： James D. Jensen , Richard B. Schoolar
发明人： James D. Jensen , Richard B. Schoolar
IPC分类号： C30B23/00 , C30B23/04 , H01L31/032 , H01L31/065 , H01L27/14
CPC分类号： H01L31/065 , C30B23/007 , C30B23/04 , C30B29/46 , H01L31/0324 , Y02E10/50
摘要： A variable temperature method for the preparation of single and multiple taxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide, [Pb.sub.1-w Cd.sub.w ].sub.a [S].sub.1-a where w varies between zero and fifteen hundredths, inclusive, and a=0.500.+-.0.003), deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.
摘要翻译：单相（例如，面心立方），三元铅硫族化物合金（例如，硫化铅，[Pb1-wCdw] a [S] 1-a）的单个和多个外延层的制备的可变温度方法，其中 w在不同的升华铅合金和硫族化合物源之间保持在接近热力学平衡状态下沉积在氟化钡BaF2的基底上的零和百分之零和百分之零和百分之零零零零，并且a = 0.500 +/- 0.003）。在制备过程中，衬底的温度是变化的，从而提供具有渐变组成的外延层和沿着生长方向的预定的电学和光学特性。该生长技术可用于生产红外透镜，窄带检测器和双异质结激光器。

2. 发明授权

US4312114A Method of preparing a thin-film, single-crystal photovoltaic detector 失效
标题翻译：制备薄膜单晶光伏探测器的方法
公开(公告)号：US4312114A
公开(公告)日：1982-01-26
申请号：US16236
申请日：1979-02-28
申请人： Richard B. Schoolar
发明人： Richard B. Schoolar
IPC分类号： H01L31/02 , H01L31/032 , H01L31/0352 , H01L31/103 , H01L21/363 , H01L27/14
CPC分类号： H01L31/1037 , H01L31/02024 , H01L31/0324 , H01L31/03529 , Y02E10/50
摘要： A thin-film single-crystal infrared detector exhibiting an increased frequency of response. A closed transverse junction, formed by diffusing a central electrode of an impurity rich metal into a lead-salt film epitaxially grown on an insulating substrate, provides an effective optical area in excess of the junction surface. An ohmic contact is spaced apart from the central electrode. Junction capacitance, a limitation upon the electrical response, is diminished by the detector geometry while detectivity is enhanced. In an alternative embodiment the detector may be segmented to provide directional detection.
摘要翻译：呈现出增加的响应频率的薄膜单晶红外检测器。通过将富杂金属的中心电极扩散到在绝缘衬底上外延生长的铅 - 盐膜中而形成的封闭横向结，提供了超过接合面的有效光学面积。欧姆接触与中心电极间隔开。结电容，对电响应的限制，被检测器几何减少，同时增强了检测性。在替代实施例中，检测器可以被分段以提供方向检测。

3. 发明授权

US4282045A Pb.sub.1-W Cd.sub.W S Epitaxial thin film 失效
标题翻译： Pb1-WCdWS外延薄膜
公开(公告)号：US4282045A
公开(公告)日：1981-08-04
申请号：US143562
申请日：1980-04-25
申请人： James D. Jensen , Richard B. Schoolar
发明人： James D. Jensen , Richard B. Schoolar
IPC分类号： C30B23/00 , C30B23/04 , H01L31/032 , H01L31/065 , H01L29/26 , H01L27/12
CPC分类号： H01L31/065 , C30B23/007 , C30B23/04 , C30B29/46 , H01L31/0324 , Y02E10/50 , Y10S438/93 , Y10S438/936
摘要： A variable temperature method for the preparation of single and multiple epitaxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide, [Pb.sub.1-w Cd.sub.w ].sub.a [S].sub.1-a wherein w varies between zero and fifteen hundredths, inclusive, and a=0.500.+-.0.003), deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.
摘要翻译：用于制备单相（例如，面心立方）三元铅硫族化物合金（例如，硫化铅，[Pb1-wCdw] a [S] 1-a）的单个和多个外延层的可变温度方法，其中 w在不同的升华铅合金和硫族化合物源之间保持在接近热力学平衡状态下沉积在氟化钡BaF2的基底上的零和百分之零和百分之零和百分之零零零零，并且a = 0.500 +/- 0.003）。在制备过程中，衬底的温度是变化的，从而提供具有渐变组成的外延层和沿着生长方向的预定的电学和光学特性。该生长技术可用于生产红外透镜，窄带检测器和双异质结激光器。

4. 发明授权

US4339764A PbS.sub.x Se.sub.1-x semiconductor 失效
标题翻译： PbSxSe1-x半导体
公开(公告)号：US4339764A
公开(公告)日：1982-07-13
申请号：US23983
申请日：1979-03-26
申请人： Richard B. Schoolar
发明人： Richard B. Schoolar
IPC分类号： C30B23/02 , H01L21/363 , H01L29/24 , H01L27/14
CPC分类号： H01L29/245 , C30B23/02 , C30B29/48 , H01L21/0242 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/02631
摘要： A high temperature method for the preparation of single and multiple epitaxial layers of single-phase lead sulfide-selenide, [Pb].sub.a [S.sub.x Se.sub.1-x ].sub.1-a wherein x varies between one and zero, inclusive, and a=0.500.+-.0.003, deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the substrate is exposed to the vapor emanating from the single chimney of a two-zone, dual-chamber furnace, thereby providing an epilayer of uniform, and predetermined electrical and optical properties.
摘要翻译：用于制备单相硫化铅/硒化物[Pb] a [SxSe1-x] 1-a的单个和多个外延层的高温方法，其中x在1和0之间变化，包括1和0，a = 0.500 + -0.003，沉积在与同时升华的铅合金和硫族化合物源保持接近热力学平衡的氟化钡BaF2的基底上。在制备过程中，将基板暴露于由双区双腔炉的单个烟囱发出的蒸气中，从而提供均匀且预定的电气和光学特性的外延层。

5. 发明授权

US4126732A Surface passivation of IV-VI semiconductors with As.sub.2 S.sub.3 失效
标题翻译： IV-VI半导体的表面钝化与As {hd 2 {b S {HD 3
公开(公告)号：US4126732A
公开(公告)日：1978-11-21
申请号：US825007
申请日：1977-08-16
申请人： Richard B. Schoolar , James D. Jensen
发明人： Richard B. Schoolar , James D. Jensen
IPC分类号： H01L21/471 , H01L23/29 , H01L23/31 , H01L29/24 , H01L21/208 , B05D5/12 , H01L21/368
CPC分类号： H01L21/471 , H01L23/29 , H01L23/3107 , H01L29/245 , H01L2924/0002 , Y10S438/958
摘要： The process of coating epitaxial films of lead chalcogenide materials withs.sub.2 S.sub.3 to insulate the films from the effects of oxygen upon exposure to air.
摘要翻译：用As2S3涂覆铅硫族化物材料的外延膜的过程使膜不受氧气暴露于空气中的影响。

6. 发明授权

US4482881A Thick extended contact photoconductor 失效
标题翻译：厚延伸接触感光体
公开(公告)号：US4482881A
公开(公告)日：1984-11-13
申请号：US399267
申请日：1982-07-19
申请人： Richard B. Schoolar , Alfred A. Fote
发明人： Richard B. Schoolar , Alfred A. Fote
IPC分类号： H01L27/144 , H01L31/0224 , H01L31/08
CPC分类号： H01L31/08 , H01L27/144 , H01L31/0224
摘要： A semiconductor photoconductor having low impedance nonmetallic contacts is disclosed which has increased detectivity over prior art photoconductor structures. The improved photoconductor has metallic contacts that are separated by a contact length that is greater than the optical length of the detector. The contact regions of the semiconductor adjacent the detector region are thicker than the detector region. The process for fabricating the photoconductor includes thinning the detector region to an appropriate thickness while preserving the greater thickness of the contact regions.
摘要翻译：公开了一种具有低阻抗非金属触点的半导体感光体，其具有比现有技术的光电导体结构更高的检测率。改进的光电导体具有金属触点，其被接触长度分开，该接触长度大于检测器的光学长度。与检测器区域相邻的半导体的接触区域比检测器区域厚。制造光电导体的方法包括将检测器区域变薄到适当的厚度，同时保持接触区域的较大厚度。

7. 发明授权

US4231053A High electrical frequency infrared detector 失效
标题翻译：高电频红外探测器
公开(公告)号：US4231053A
公开(公告)日：1980-10-28
申请号：US17217
申请日：1979-03-05
申请人： Richard B. Schoolar
发明人： Richard B. Schoolar
IPC分类号： H01L27/142 , H01L31/02 , H01L31/103 , H01L27/14
CPC分类号： H01L31/02024 , H01L27/142 , H01L31/1037 , Y02E10/50
摘要： A thin-film single-crystal infrared detector exhibiting an increased freqcy of response. A closed transverse junction, formed by diffusing a central electrode of an impurity rich metal into a lead-salt film epitaxially grown on an insulating substrate, provides an effective optical area in excess of the junction surface. An ohmic contact is spaced apart from the central electrode. Junction capacitance, a limitation upon the electrical response, is diminished by the detector geometry while detectivity is enhanced. In an alternative embodiment the detector may be segmented to provide directional detection.
摘要翻译：呈现出增加的响应频率的薄膜单晶红外检测器。通过将富杂金属的中心电极扩散到在绝缘衬底上外延生长的铅 - 盐膜中而形成的封闭横向结，提供了超过接合面的有效光学面积。欧姆接触与中心电极间隔开。结电容，对电响应的限制，被检测器几何减少，同时增强了检测性。在替代实施例中，检测器可以被分段以提供方向检测。

8. 发明授权

US4371232A Graded gap semiconductor optical device 失效
标题翻译：分级间隙半导体光器件
公开(公告)号：US4371232A
公开(公告)日：1983-02-01
申请号：US143695
申请日：1980-04-25
申请人： James D. Jensen , Richard B. Schoolar
发明人： James D. Jensen , Richard B. Schoolar
IPC分类号： C30B23/00 , C30B23/04 , H01L31/032 , H01L31/065 , H01L27/14 , G02B1/02
CPC分类号： H01L31/065 , C30B23/007 , C30B23/04 , C30B29/46 , H01L31/0324 , Y02E10/50
摘要： A variable temperature method for the preparation of single and multiple taxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide [Pb.sub.1-w Cd.sub.w ].sub.a [S].sub.1-a wherein w varies between zero and fifteen hundredths, inclusive, and a=0.500.+-.0.003), deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.
摘要翻译：用于制备单相（例如，面心立方）三元铅硫族化物合金（例如，硫化铅[Pb1-wCdw] a [S] 1-a）的单个和多个外延层的可变温度方法，其中w 变化在零和百分之零零零之间，并且a = 0.500 +/- 0.003），沉积在与同时升华的铅合金和硫族化物源保持接近热力学平衡的氟化钡BaF2的衬底上。在制备过程中，衬底的温度是变化的，从而提供具有渐变组成的外延层和沿着生长方向的预定的电学和光学特性。该生长技术可用于生产红外透镜，窄带检测器和双异质结激光器。

9. 发明授权

US4227948A Growth technique for preparing graded gap semiconductors and devices 失效
标题翻译：制备梯度半导体和器件的生长技术
公开(公告)号：US4227948A
公开(公告)日：1980-10-14
申请号：US864417
申请日：1977-12-27
申请人： James D. Jensen , Richard B. Schoolar
发明人： James D. Jensen , Richard B. Schoolar
IPC分类号： C30B23/00 , C30B23/04 , H01L21/365 , H01L31/032 , H01L31/04 , H01L31/065 , H01L21/203
CPC分类号： H01L31/065 , C30B23/007 , C30B23/04 , C30B29/46 , H01L31/0324 , Y02E10/50 , Y10S438/93 , Y10S438/936
摘要： A variable temperature method for the preparation of single and multiple taxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide, [Pb.sub.1-w Cd.sub.w ].sub.a [S].sub.1-a wherein w varies between zero and fifteen hundredths, inclusive, and a=0.500.+-.0.003), deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.
摘要翻译：用于制备单相（例如，面心立方）三元铅硫族化物合金（例如，硫化铅，[Pb1-wCdw] a [S] 1-a）的单个和多个外延层的可变温度方法，其中 w在不同的升华铅合金和硫族化合物源之间保持在接近热力学平衡状态下沉积在氟化钡BaF2的基底上的零和百分之零和百分之零和百分之零零零零，并且a = 0.500 +/- 0.003）。在制备过程中，衬底的温度是变化的，从而提供具有渐变组成的外延层和沿着生长方向的预定的电学和光学特性。该生长技术可用于生产红外透镜，窄带检测器和双异质结激光器。

10. 发明授权

US4157926A Method of fabricating a high electrical frequency infrared detector by vacuum deposition 失效
标题翻译：通过真空沉积制造高电频红外检测器的方法
公开(公告)号：US4157926A
公开(公告)日：1979-06-12
申请号：US918133
申请日：1978-06-22
申请人： Richard B. Schoolar
发明人： Richard B. Schoolar
IPC分类号： H01L31/032 , H01L21/363 , H01L27/14
CPC分类号： H01L31/0324 , Y10S438/93
摘要： A thin-film single-crystal infrared detector exhibiting an increased frequency of response. A closed transverse junction, formed by diffusing a central electrode of an impurity rich metal into a lead-salt film epitaxially grown on an insulating substrate, provides an effective optical area in excess of the junction surface. An ohmic contact is spaced apart from the central electrode. Junction capacitance, a limitation upon the electrical response, is diminished by the detector geometry while detectivity is enhanced. In an alternative embodiment the detector may be segmented to provide directional detection.
摘要翻译：呈现出增加的响应频率的薄膜单晶红外检测器。通过将富杂金属的中心电极扩散到在绝缘衬底上外延生长的铅 - 盐膜中而形成的封闭横向结，提供了超过接合面的有效光学面积。欧姆接触与中心电极间隔开。结电容，对电响应的限制，被检测器几何减少，同时增强了检测性。在替代实施例中，检测器可以被分段以提供方向检测。

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