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1. 发明授权

US07374817B2 Topological crystal of transition metal chalcogenide and method of forming the same 失效
标题翻译：过渡金属硫族化物的拓扑结晶及其形成方法
公开(公告)号：US07374817B2
公开(公告)日：2008-05-20
申请号：US10535450
申请日：2003-05-20
申请人： Satoshi Tanda , Taku Tsuneta , Yoshitoshi Okajima , Katsuhiko Inagaki , Kazuhiko Yamaya , Noriyuki Hatakenaka
发明人： Satoshi Tanda , Taku Tsuneta , Yoshitoshi Okajima , Katsuhiko Inagaki , Kazuhiko Yamaya , Noriyuki Hatakenaka
IPC分类号： B32B15/01
CPC分类号： C30B11/12 , C30B23/007 , C30B29/46
摘要： Disclosed is a transition-metal chalcogenide crystal having a topological configuration/structure. A micro-droplet of a chalcogen element, such as S, Se or Te, is condensed and circulated in suspended form in an atmosphere containing a Group IVb, Vb or VI transition metal element, such as Nb, Ta, Zr, Ti, Hf or W, together with the chalcogen element. Then, micro-whiskers of a transition metal chalcogenide formed in the atmosphere are attached onto a surface of the chalcogen-element micro-droplet by the action of a surface tension of the micro-droplet, and grown as a loop-shaped crystal wound around the surface of the micro-droplet to obtain a loop-shaped crystal having a twist of 0, π or 2π. The crystal has a ribbon-like open or closed loop configuration. The transition-metal chalcogenide crystal with the topological loop-shaped microstructure can exhibit original properties peculiar to each transition-metal chalcogenide, and has applicability, for example, to a quantum device, such as SQUID.
摘要翻译：公开了具有拓扑结构/结构的过渡金属硫族化物晶体。硫族元素如S，Se或Te的微滴在悬浮状态下冷凝并循环在含有IVb，Vb或VI族过渡金属元素如Nb，Ta，Zr，Ti，Hf的气氛中或W，与硫属元素一起。然后，通过微滴的表面张力的作用将在大气中形成的过渡金属硫属元素化物的微晶须附着在硫族元素微滴的表面上，并以缠绕在周围的环形晶体生长微滴的表面，以获得扭曲为0，pi或2pi的环形晶体。该晶体具有带状的开环或闭环配置。具有拓扑环状微结构的过渡金属硫族化物晶体可以显示出每种过渡金属硫族化物特有的原始特性，并且具有例如量子器件（例如SQUID）的适用性。

2. 发明申请

US20060124048A1 Topological crystal of transition metal chalcogenide and method of forming the same 失效
标题翻译：过渡金属硫族化物的拓扑结晶及其形成方法
公开(公告)号：US20060124048A1
公开(公告)日：2006-06-15
申请号：US10535450
申请日：2003-05-20
申请人： Satoshi Tanda , Taku Tsuneta , Yoshitoshi Okajima , Katsuhiko Inagaki , Kazuhiko Yamaya , Noriyuki Hatakenaka
发明人： Satoshi Tanda , Taku Tsuneta , Yoshitoshi Okajima , Katsuhiko Inagaki , Kazuhiko Yamaya , Noriyuki Hatakenaka
IPC分类号： H01L21/322 , C30B15/14
CPC分类号： C30B11/12 , C30B23/007 , C30B29/46
摘要： Disclosed is a transition-metal chalcogenide crystal having a topological configuration/structure. A micro-droplet of a chalcogen element, such as S, Se or Te, is condensed and circulated in suspended form in an atmosphere containing a Group IVb, Vb or VI transition metal element, such as Nb, Ta, Zr, Ti, Hf or W, together with the chalcogen element. Then, micro-whiskers of a transition metal chalcogenide formed in the atmosphere are attached onto a surface of the chalcogen-element micro-droplet by the action of a surface tension of the micro-droplet, and grown as a loop-shaped crystal wound around the surface of the micro-droplet to obtain a loop-shaped crystal having a twist of 0, π or 2 π. The crystal has a ribbon-like open or closed loop configuration. The transition-metal chalcogenide crystal with the topological loop-shaped microstructure can exhibit original properties peculiar to each transition-metal chalcogenide, and has applicability, for example, to a quantum device, such as SQUID.
摘要翻译：公开了具有拓扑结构/结构的过渡金属硫族化物晶体。硫族元素如S，Se或Te的微滴在悬浮状态下冷凝并循环在含有IVb，Vb或VI族过渡金属元素如Nb，Ta，Zr，Ti，Hf的气氛中或W，与硫属元素一起。然后，通过微滴的表面张力的作用将在大气中形成的过渡金属硫属元素化物的微晶须附着在硫族元素微滴的表面上，并以缠绕在周围的环形晶体生长微滴的表面以获得具有0，pi或2π的扭曲的环形晶体。该晶体具有带状的开环或闭环配置。具有拓扑环状微结构的过渡金属硫族化物晶体可以显示出每种过渡金属硫族化物特有的原始特性，并且具有例如量子器件（例如SQUID）的适用性。

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