专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20160215389A1 COMPOSITIONS OF MATTER AND METHODS OF PRODUCING A CARBONIZED CLOTH FOR GROWTH OF GRAPHENE NANO-PETALS 审中-公开
标题翻译：碳纳米管生长碳纤维布的制备方法及其制备方法
公开(公告)号：US20160215389A1
公开(公告)日：2016-07-28
申请号：US15007966
申请日：2016-01-27
申请人： Purdue Research Foundation
发明人： Timothy Fisher , Guoping Xiong
IPC分类号： C23C16/26 , C23C16/505 , C01B31/04 , C23C16/50 , D06M11/74 , C23C16/511 , C23C16/503
CPC分类号： C23C16/26 , C01B32/186 , C23C16/0245 , C23C16/50 , D06M10/025 , D06M10/06 , D06M11/74 , D06M2101/06
摘要： Compositions of matter including a cloth base comprising one or more not fully carbon fibers woven together, where at least a portion of the not fully carbon fibers of the cloth base are carbonized and comprise graphene petals thereon. The not fully carbon fibers may be selected from a variety of materials including cellulose fibers such as hemp, linen, and/or cotton, and may also or alternatively include synthetic fibers such as polyester, Kevlar, and/or Rayon. A method for producing such a carbonized conductive fiber-based cloth is also provided, the method including carbonizing a cloth base comprising not fully carbon fibers in a plasma stream of a plasma process and growing graphene petals integrally on the carbonized cloth using the same plasma process.
摘要翻译：包括一种包括一个或多个未完全碳纤维织物的布基的物质组合物，其中布基的至少一部分未完全碳纤维被碳化并且在其上包括石墨烯花瓣。不完全碳纤维可以选自包括纤维素纤维如大麻，亚麻和/或棉的各种材料，并且还可以或者可选地包括合成纤维如聚酯，凯夫拉尔和/或人造丝。还提供了一种生产这种碳化导电纤维基布的方法，该方法包括在等离子体工艺的等离子体流中将不完全碳纤维的基体碳化，并且使用相同的等离子体工艺在碳化布上一体地生长石墨烯花瓣。

12. 发明申请

US20160068960A1 METHOD FOR GENERATING PLASMA UNIFORMLY ON DIELECTRIC MATERIAL 审中-公开
标题翻译：在电介质材料上产生等离子体均匀的方法
公开(公告)号：US20160068960A1
公开(公告)日：2016-03-10
申请号：US14846048
申请日：2015-09-04
申请人： Research & Business Foundation Sungkyunkwan University
发明人： Dong Geun JUNG , Yong Ki CHO , Won Jin BAN
IPC分类号： C23C16/503 , C23C16/52 , A61F2/82 , G01R19/00
CPC分类号： C23C16/503 , A61F2/82 , A61F2240/001 , C23C16/0245 , C23C16/045 , C23C16/52 , G01R31/1263 , H05H1/2406 , H05H2001/2412 , H05H2001/2456 , H05H2001/2462
摘要： The present invention relates to a method for checking a discharge inception voltage of a dielectric material, a method for forming a displacement field on the dielectric materials comprising applying a voltage the same as or higher than the discharge inception voltage generated by an external field obtained from the above to the dielectric material to which electrodes are connected, a method for forming plasma on the surfaces of the dielectric material comprising injecting reaction gases and applying a voltage the same as or higher than the discharge inception voltage obtained above to the dielectric material to which electrodes are connected, a method for forming a displacement field on the entire surface of the dielectric material comprising applying a voltage the same as or higher than the discharge inception voltage obtained above to the dielectric material to which electrodes are connected, and a dielectric material which is modified, in which the surfaces thereof are treated with plasma by the methods described above.
摘要翻译：本发明涉及一种用于检查电介质材料的放电起始电压的方法，一种用于在电介质材料上形成位移场的方法，包括施加与外部场产生的放电起始电压相同或更高的电压，上述电极与电极连接的电介质材料，在电介质材料的表面上形成等离子体的方法，包括将反应气体注入并施加与上述获得的放电起始电压相同或更高的电压至电介质材料电极连接，在电介质材料的整个表面上形成位移场的方法，包括将与上述获得的放电起始电压相同或更高的电压施加到与其连接的电介质材料上的电介质材料和被修饰，其中表面被处理 h等离子体。

13. 发明申请

US20150299847A1 ION BOMBARDMENT DEVICE AND METHOD FOR USING THE SAME TO CLEAN SUBSTRATE SURFACE 审中-公开
标题翻译：离子BOBBARDMENT器件及其使用方法清洗基片表面
公开(公告)号：US20150299847A1
公开(公告)日：2015-10-22
申请号：US14651004
申请日：2014-01-09
申请人： KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.)
发明人： Satoshi HIROTA , Homare NOMURA
IPC分类号： C23C16/02 , C23C16/44 , H01J37/32 , C23C16/48
CPC分类号： C23C16/0245 , C23C14/022 , C23C16/0227 , C23C16/44 , C23C16/4584 , C23C16/486 , H01J37/32568 , H01J37/3266 , H01J2237/3321 , H01J2237/335
摘要： An ion bombardment device for stabilizing and cleaning the surface of a substrate. The device includes: a vacuum chamber; at least one electrode that is disposed on the inner wall face of the vacuum chamber and emits electrons; a plurality of anodes that receive the electrons from the electrode and that are arranged so as to face the electrode with the substrate sandwiched therebetween; and a plurality of discharge power sources corresponding to the anodes respectively. Each of the discharge power sources is insulated from the vacuum chamber and provides to the anode corresponding to the relevant discharge power source currents and voltages that can be set independently of one another, thereby generating a glow discharge between such anode and the electrode.
摘要翻译：一种用于稳定和清洁基底表面的离子轰击装置。该装置包括：真空室; 至少一个电极，设置在真空室的内壁面上并发射电子; 多个阳极，其从所述电极接收电子，并且被布置为与所述电极对置，所述基板夹在其间; 以及分别对应于阳极的多个放电电源。每个放电电源与真空室绝缘，并且提供给阳极，该阳极对应于可以彼此独立设置的相关放电电源电流和电压，从而在这种阳极和电极之间产生辉光放电。

14. 发明授权

US09150418B2 Method and system for graphene formation 有权
标题翻译：石墨烯形成方法和系统
公开(公告)号：US09150418B2
公开(公告)日：2015-10-06
申请号：US13774188
申请日：2013-02-22
申请人： California Institute of Technology
发明人： David A. Boyd
IPC分类号： C23C14/02 , C01B31/04 , B01J19/12 , C07C9/04 , B01J19/08 , B01J19/22 , B82Y30/00 , B82Y40/00
CPC分类号： C01B31/0453 , B01J19/088 , B01J19/22 , B01J2219/0879 , B01J2219/0894 , B82Y30/00 , B82Y40/00 , C01B32/186 , C23C16/0245 , C23C16/26 , C23C16/52 , C23C16/545 , H01J37/32082 , H01J37/32449 , H01J37/32522 , H01J37/32816 , H01J2237/335 , H01L21/02046 , H01L21/02425 , H01L21/02527 , H01L21/0262 , H01L21/02661 , H01L29/1606 , H01L29/32
摘要： A method for forming graphene includes providing a substrate and subjecting the substrate to a reduced pressure environment. The method also includes providing a carrier gas and a carbon source and exposing at least a portion of the substrate to the carrier gas and the carbon source. The method further includes performing a surface treatment process on the at least a portion of the substrate and converting a portion of the carbon source to graphene disposed on the at least a portion of the substrate.
摘要翻译：一种用于形成石墨烯的方法包括提供基底并使基底经历减压环境。该方法还包括提供载气和碳源，并将基底的至少一部分暴露于载气和碳源。所述方法还包括对所述基底的所述至少一部分进行表面处理过程，并将所述碳源的一部分转化为设置在所述基底的所述至少一部分上的石墨烯。

15. 发明授权

US09064816B2 Dry-etch for selective oxidation removal 有权
标题翻译：干蚀刻用于选择性氧化去除
公开(公告)号：US09064816B2
公开(公告)日：2015-06-23
申请号：US13839948
申请日：2013-03-15
申请人： Applied Materials, Inc.
发明人： Sang Hyuk Kim , Dongqing Yang , Young S. Lee , Weon Young Jung , Sang-jin Kim , Ching-Mei Hsu , Anchuan Wang , Nitin K. Ingle
IPC分类号： B44C1/22 , H01L21/311 , H01L21/02 , H01J37/32
CPC分类号： H01L21/3065 , C23C16/0245 , H01J37/32357 , H01J2237/334 , H01L21/02046 , H01L21/02068 , H01L21/31116 , H01L21/31122 , H01L21/32135 , H01L21/32136 , H01L21/76814
摘要： Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. In some embodiments, the tungsten oxide selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate.
摘要翻译：描述了相对于钨，氧化硅，氮化硅和/或氮化钛选择性地蚀刻氧化钨的方法。这些方法包括由含氟前体和/或氢（H 2）形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与氧化钨反应。等离子体流出物与暴露的表面反应并选择性地去除氧化钨，同时非常缓慢地除去其它暴露的材料。在一些实施方案中，氧化钨选择性部分地来自位于远程等离子体和基板处理区域之间的离子抑制元件的存在。离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。

16. 发明申请

US20150104648A1 Method and Apparatus of Growing Metal-free and Low Stress Thick Film of Diamond-like Carbon 审中-公开
标题翻译：生长金刚石和低应力厚膜的金刚石碳的方法和装置
公开(公告)号：US20150104648A1
公开(公告)日：2015-04-16
申请号：US14490692
申请日：2014-09-19
申请人： Nano and Advanced Materials Institute Limited
发明人： Zhonghui Alex WANG
IPC分类号： C23C16/27 , C23C16/503 , C23C16/458 , C23C16/52 , C23C16/505 , H01J37/32 , C23C16/56
CPC分类号： H01J37/32724 , C23C16/0245 , C23C16/26 , C23C16/517 , C23C16/52 , C23C16/56 , C23C28/046 , C23C28/42 , H01J37/32082 , H01J37/32889 , H01J2237/2007 , H01J2237/327 , H01J2237/3321 , H01J2237/3341 , Y10T428/30
摘要： The presently claimed invention provides a metal-free and low stress thick film of diamond-like carbon (DLC). The diamond-like carbon layer of the present invention has a wide range of applications such as automotive coating, hydrophobic-hydrophilic tuning, solar photovoltaic, decorative coating, protective coating and bio-compatible coating. The presently claimed invention further provides a method and an apparatus to grow a metal-free and low stress thick film of diamond-like carbon by performing deposition and plasma etching to stack more than one diamond-like carbon layers together in the same chamber.
摘要翻译：本发明提供一种无金属和低应力的类金刚石碳（DLC）。本发明的类金刚石碳层具有广泛的应用，例如汽车涂层，疏水亲水调谐，太阳能光伏，装饰涂层，保护涂层和生物相容性涂层。本发明还提供了一种通过进行沉积和等离子体蚀刻在相同的室中将多于一个类金刚石碳层堆叠在一起而生长无金属和低应力厚金刚石碳的膜的方法和装置。

17. 发明申请

US20150099123A1 CARBON BASED COATINGS AND METHODS OF PRODUCING THE SAME 审中-公开
标题翻译：碳基涂料及其生产方法
公开(公告)号：US20150099123A1
公开(公告)日：2015-04-09
申请号：US14357554
申请日：2012-11-17
申请人： UNITED PROTECTIVE TECHNOLOGIES
发明人： Brent William Barbee , Jordan Moriah Larson , Michael Raymond Greenwald , Christopher Shane Alexander , Matthew James Decourcelle , Jamey Tollfeldt Ewing
IPC分类号： C23C16/26 , C23C16/50 , C23C16/02
CPC分类号： C23C16/26 , C23C16/0227 , C23C16/0245 , C23C16/50 , Y10T428/30
摘要： Provided herein is a carbon based coating and methods of producing the same. The carbon based coating comprising an amorphous carbon thin film deposited on a substrate, the carbon based coating characterized in that the carbon based coating imparts enhanced surface durability properties.
摘要翻译：本文提供的是碳基涂层及其制备方法。碳基涂层包含沉积在基底上的无定形碳薄膜，碳基涂层的特征在于碳基涂层具有增强的表面耐久性。

18. 发明申请

US20140287588A1 Deposition Method and Deposition Apparatus 审中-公开
标题翻译：沉积方法和沉积装置
公开(公告)号：US20140287588A1
公开(公告)日：2014-09-25
申请号：US14347537
申请日：2013-04-26
申请人： ULVAC, INC.
发明人： Seiichi Takahashi
IPC分类号： H01L21/02 , H01L21/67
CPC分类号： H01L21/02518 , C23C16/0227 , C23C16/0236 , C23C16/0245 , C30B25/02 , C30B25/186 , C30B29/06 , C30B29/08 , C30B35/00 , H01L21/02046 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/02661 , H01L21/31116 , H01L21/67161 , H01L21/6719 , H01L21/67207
摘要： [Object] To provide a deposition method and a deposition apparatus, which are capable of cleaning a surface of a silicon substrate and causing a single crystal film having excellent crystallinity to grow on the surface.[Solving Means] A deposition method according to an embodiment of the present invention includes a process of etching a natural oxide film formed on a surface of a silicon substrate. The surface of the silicon substrate is cleaned. A film is caused to grow on the cleaned surface of the silicon substrate, the film including at least one of silicon and germanium.
摘要翻译：本发明提供能够清洗硅衬底表面并使具有优异结晶度的单晶膜在表面上生长的沉积方法和沉积设备。 [解决方案]根据本发明的实施方案的沉积方法包括蚀刻形成在硅衬底的表面上的自然氧化膜的工艺。清洗硅衬底的表面。导致在硅衬底的清洁表面上生长膜，该膜包括硅和锗中的至少一种。

19. 发明申请

US20140272187A1 ADHESION IMPROVEMENT BETWEEN CVD DIELECTRIC FILM AND CU SUBSTRATE 审中-公开
标题翻译： CVD介质膜与铜基板之间的粘合改进
公开(公告)号：US20140272187A1
公开(公告)日：2014-09-18
申请号：US14180339
申请日：2014-02-13
申请人： Applied Materials, Inc.
发明人： Tae Kyung WON , Yi CUI , Beom Soo PARK , Soo Young CHOI
IPC分类号： C23C16/02 , C23C16/34
CPC分类号： C23C16/345 , C23C16/0245
摘要： Methods of forming dielectric layers on a copper substrate are disclosed herein. In one embodiment, a method of depositing a dielectric layer can include positioning a copper substrate in a process chamber, forming and delivering the cleaning plasma to the substrate to form a cleaned surface on the substrate, forming and delivering the adhesion plasma to the surface of the substrate to form a copper compound thereon and depositing a dielectric layer over the copper compound. In another embodiment, a method of depositing a dielectric layer can include positioning a copper substrate in a process chamber, delivering an adhesion plasma to the copper substrate to form a copper compound and flowing a deposition gas into the process chamber to deposit a dielectric layer over the copper compound, wherein the flow between the adhesion plasma and the deposition gas is continuous.
摘要翻译：本文公开了在铜基底上形成电介质层的方法。在一个实施例中，沉积电介质层的方法可以包括将铜衬底定位在处理室中，形成并将清洁等离子体输送到衬底，以在衬底上形成清洁表面，形成并将粘合等离子体输送到所述基板在其上形成铜化合物并在所述铜化合物上沉积介电层。在另一个实施例中，沉积电介质层的方法可以包括将铜衬底定位在处理室中，将粘合等离子体输送到铜衬底以形成铜化合物并将沉积气体流入处理室以沉积介电层铜化合物，其中粘附等离子体和沉积气体之间的流动是连续的。

20. 发明申请

US20140255676A1 POLYMER ARTICLE HAVING A THIN COATING FORMED ON AT LEAST ONE OF ITS SIDES BY PLASMA AND METHOD FOR PRODUCING SUCH AN ARTICLE 审中-公开
标题翻译：具有通过等离子体形成的薄膜形成的薄膜的聚合物及其生产方法
公开(公告)号：US20140255676A1
公开(公告)日：2014-09-11
申请号：US14195949
申请日：2014-03-04
申请人： Nasser BELDI , Patrick CHOLLET
发明人： Nasser BELDI , Patrick CHOLLET
IPC分类号： B65D25/14
CPC分类号： B65D25/14 , C23C16/0245 , C23C16/30 , C23C16/505 , C23C16/54 , C23C28/04 , Y10T428/24975 , Y10T428/265
摘要： Polymer article having a thin coating on at least one of its side, the coating including a first coating of SiOxCyHz which is a plasma polymerized tetramethylsilane deposited on the surface on the polymer article, the x value being between 0 and 1.7, the y value being between 0.5 and 0.8, the z value being between 0.35 and 0.6 for the first SiOxCyHz coating and a second coating of SiOxCyHz which is a plasma polymerized tetramethylsilane deposited on the surface on the first coating, the x value being between 1.7 and 1.99, the y value being between 0.2 and 0.7, the z value being between 0.2 and 0.35 for the second SiOxCyHz coating and in that the thickness of the first coating is from about 1 nanometer to about 15 nanometers and in that the thickness of the second coating is from about 10 nanometers to about 100 nanometers.
摘要翻译：聚合物制品在其至少一侧具有薄涂层，该涂层包括沉积在聚合物制品表面上的等离子体聚合四甲基硅烷的SiO x C H z的第一涂层，x值在0和1.7之间，y值为在0.5和0.8之间，对于第一SiO x C y H z涂层，z值在0.35和0.6之间，而沉积在第一涂层上的表面上的等离子聚合的四甲基硅烷的SiO x C y H的第二涂层，x值在1.7和1.99之间，y 值在0.2和0.7之间，对于第二SiO x C y H z涂层，z值在0.2和0.35之间，并且第一涂层的厚度为约1纳米至约15纳米，并且第二涂层的厚度为约 10纳米至约100纳米。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式