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11. 发明授权

US06897493B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06897493B2
公开(公告)日：2005-05-24
申请号：US10457658
申请日：2003-06-10
申请人： Tetsuo Takahashi , Katsumi Nakamura , Tadaharu Minato , Masana Harada
发明人： Tetsuo Takahashi , Katsumi Nakamura , Tadaharu Minato , Masana Harada
IPC分类号： H01L21/331 , H01L29/06 , H01L29/423 , H01L29/739 , H01L29/74 , H01L29/76 , H01L29/768 , H01L29/861 , H01L29/868 , H01L31/111
CPC分类号： H01L29/7397 , H01L29/0692 , H01L29/0696 , H01L29/66348 , H01L29/66356 , H01L29/7391 , H01L29/7455 , H01L29/749 , H01L29/861 , H01L29/868
摘要： A pin diode is formed by a p+ collector region, an n type buffer region, an n− region and an n+ cathode region. A trench is formed from the surface of n+ cathode region through n+ cathode region to reach n− region. An insulating film is formed along an inner wall surface of trench. A gate electrode layer is formed to oppose to the sidewall of n+ cathode region with insulating film interposed. A cathode electrode is formed to be electrically connected to n+ cathode region. An anode electrode is formed to be electrically connected to p+ collector region. The n+ cathode region is formed entirely over the surface between trenches extending parallel to each other. Thus, a power semiconductor device in which gate control circuit is simplified and which has good on property can be obtained.
摘要翻译： pin二极管由p + +集电极区，n型缓冲区，n + SUP区和n + + SUP阴极区形成。从n + +阴极区域的表面形成沟槽，以通过n + + + / - >阴极区域形成沟槽，以达到n + - SUP区域。绝缘膜沿沟槽的内壁表面形成。形成与绝缘膜插入的n + +阴极区的侧壁相对的栅极电极层。阴极电极形成为与n + +阴极区电连接。阳极电极形成为与p + +集电极区域电连接。阴极区域整体形成在彼此平行延伸的沟槽之间的表面上。因此，可以获得其中简化了栅极控制电路并且具有良好的性能的功率半导体器件。

12. 发明授权

US06710401B2 Semiconductor device including a trench with at least one of an edge of an opening and a bottom surface being round 失效
标题翻译：半导体装置包括具有开口的边缘和底面中的至少一个的沟槽
公开(公告)号：US06710401B2
公开(公告)日：2004-03-23
申请号：US09569031
申请日：2000-05-11
申请人： Katsumi Nakamura , Tadaharu Minato , Shuuichi Tominaga , Katsuomi Shiozawa
发明人： Katsumi Nakamura , Tadaharu Minato , Shuuichi Tominaga , Katsuomi Shiozawa
IPC分类号： H01L2976
CPC分类号： H01L29/7824 , H01L21/76232 , H01L21/76264 , H01L21/76286 , H01L21/763 , H01L29/0696 , H01L29/1608 , H01L29/4236 , H01L29/42368 , H01L29/66325 , H01L29/66348 , H01L29/66356 , H01L29/66378 , H01L29/66666 , H01L29/7391 , H01L29/7394 , H01L29/7397 , H01L29/7455 , H01L29/78 , H01L29/7801 , H01L29/7813 , H01L29/7827
摘要： A semiconductor device which includes a substrate made of a semiconductor having a main surface. A trench is selectively formed in the substrate at a predetermined depth from the main surface. An insulating film is formed at an inner wall of the trench. A control electrode layer fills an inside of the trench through the insulating film. An insulating layer protrudes from the main surface on the control electrode layer. At least one of an edge of an opening of the trench and a bottom of the trench has a rounded surface.
摘要翻译：一种半导体器件，包括由具有主表面的半导体制成的衬底。在距离主表面的预定深度处，在衬底中选择性地形成沟槽。绝缘膜形成在沟槽的内壁处。控制电极层通过绝缘膜填充沟槽的内部。绝缘层从控制电极层上的主表面突出。沟槽的开口的边缘和沟槽的底部中的至少一个具有圆形表面。

13. 发明授权

US06218217B1 Semiconductor device having high breakdown voltage and method of manufacturing the same 有权
标题翻译：具有高击穿电压的半导体器件及其制造方法
公开(公告)号：US06218217B1
公开(公告)日：2001-04-17
申请号：US09618761
申请日：2000-07-18
申请人： Akio Uenishi , Katsumi Nakamura
发明人： Akio Uenishi , Katsumi Nakamura
IPC分类号： H01L2974
CPC分类号： H01L29/7813 , H01L29/0653 , H01L29/0696 , H01L29/402 , H01L29/407 , H01L29/66348 , H01L29/7397
摘要： In a semiconductor device with a high breakdown voltage, insulating layers are buried at regions in n− silicon substrate located between gate trenches which are arranged with a predetermined pitch. This structure increases a carrier density at a portion near an emitter, and improves characteristic of an IGBT of a gate trench type having a high breakdown voltage.
摘要翻译：在具有高击穿电压的半导体器件中，绝缘层被掩埋在位于以预定间距排列的栅极沟槽之间的n-硅衬底中的区域。该结构增加了发射极附近部分的载流子密度，提高了具有高击穿电压的栅沟槽型IGBT的特性。

14. 发明授权

US06199622B1 Connecting structure for connecting radiator and condenser 有权
标题翻译：连接散热器和冷凝器的连接结构
公开(公告)号：US06199622B1
公开(公告)日：2001-03-13
申请号：US09362962
申请日：1999-07-30
申请人： Katsuji Mashio , Fumihiro Inoue , Yukinobu Take , Hiroshi Koizumi , Katsumi Nakamura , Hironori Muramoto
发明人： Katsuji Mashio , Fumihiro Inoue , Yukinobu Take , Hiroshi Koizumi , Katsumi Nakamura , Hironori Muramoto
IPC分类号： F28F900
CPC分类号： F28F9/002 , B60K11/04 , F28D1/0435 , F28D2021/0084 , F28D2021/0094 , F28F2240/00
摘要： A connecting structure for connecting a radiator having a reinforcement member and a condenser having a bracket is provided. The structure includes a connecting member having a spacer portion and a holding portion integrally formed on opposite sides of a notch. The spacer portion is fittingly inserted into the reinforcement member, and a folded portion of the reinforcement member and the condenser bracket are inserted into the notch. A bolt is inserted through the reinforcement member, the spacer portion, the bracket and the holding portion and a nut is screwed onto a tip of the bolt for clamping the radiator and the condenser together.
摘要翻译：提供了一种用于连接具有加强构件的散热器和具有托架的冷凝器的连接结构。该结构包括具有间隔部分和一体地形成在凹口的相对侧上的保持部分的连接部件。间隔部分适配地插入到加强件中，并且加强件和冷凝器支架的折叠部分插入槽口中。螺栓穿过加强构件，间隔件部分，支架和保持部分，螺母被拧在螺栓的顶端上，用于将散热器和冷凝器夹紧在一起。

15. 发明授权

US06173766B1 Integrated heat exchanger 失效
标题翻译：集成热交换器
公开(公告)号：US06173766B1
公开(公告)日：2001-01-16
申请号：US09013221
申请日：1998-01-26
申请人： Katsumi Nakamura , Michitake Sumida
发明人： Katsumi Nakamura , Michitake Sumida
IPC分类号： F28B706
CPC分类号： F28D1/05375 , F28D1/0435 , F28D2021/0084 , F28D2021/0094 , F28F9/0212 , F28F2009/0287 , F28F2215/02
摘要： An integrated heat exchanger includes a radiator having a core formed between a pair of radiator tanks, a condenser adjoining the radiator and having the core formed between a pair of condenser tanks, and a corrugated fin provided in the core and shared between the radiator and the condenser, the heat exchanger containing first partitions which divide the inside of the pair of condenser tanks to thereby create fluid chambers on one side of the respective condenser tanks in such a way as to become opposite to each other; and a fluid inflow pipe and a fluid outflow pipe connected to the fluid chamber of the condenser tanks.
摘要翻译：集成热交换器包括散热器，散热器具有形成在一对散热器箱之间的芯体，邻接散热器的冷凝器和形成在一对冷凝器容器之间的芯体，以及设置在芯体中并在散热器和冷凝器，所述热交换器包含分隔所述一对冷凝器罐的内部的第一隔板，从而在相应的冷凝器箱的一侧上以彼此相反的方式产生流体室; 以及连接到冷凝罐的流体室的流体流入管和流体流出管。

16. 发明授权

US6111290A Semiconductor device having high breakdown voltage and method of manufacturing the same 有权
标题翻译：具有高击穿电压的半导体器件及其制造方法
公开(公告)号：US6111290A
公开(公告)日：2000-08-29
申请号：US178767
申请日：1998-10-26
申请人： Akio Uenishi , Katsumi Nakamura
发明人： Akio Uenishi , Katsumi Nakamura
IPC分类号： H01L21/331 , H01L29/06 , H01L29/40 , H01L29/739 , H01L29/78 , H01L29/745
CPC分类号： H01L29/402 , H01L29/0653 , H01L29/0696 , H01L29/407 , H01L29/66348 , H01L29/7397 , H01L29/7813
摘要： In a semiconductor device with a high breakdown voltage, insulating layers are buried at regions in n.sup.- silicon substrate located between gate trenches which are arranged with a predetermined pitch. This structure increases a carrier density at a portion near an emitter, and improves characteristic of an IGBT of a gate trench type having a high breakdown voltage.
摘要翻译：在具有高击穿电压的半导体器件中，绝缘层被掩埋在位于以预定间距排列的栅极沟槽之间的n-硅衬底中的区域。该结构增加了发射极附近部分的载流子密度，提高了具有高击穿电压的栅沟槽型IGBT的特性。

17. 发明授权

US5894149A Semiconductor device having high breakdown voltage and method of manufacturing the same 失效
标题翻译：具有高击穿电压的半导体器件及其制造方法
公开(公告)号：US5894149A
公开(公告)日：1999-04-13
申请号：US762175
申请日：1996-12-09
申请人： Akio Uenishi , Katsumi Nakamura
发明人： Akio Uenishi , Katsumi Nakamura
IPC分类号： H01L21/331 , H01L29/06 , H01L29/40 , H01L29/739 , H01L29/78 , H01L29/745
CPC分类号： H01L29/402 , H01L29/0653 , H01L29/0696 , H01L29/407 , H01L29/66348 , H01L29/7397 , H01L29/7813
摘要： In a semiconductor device with a high breakdown voltage, insulating layers are buried at regions in n.sup.31 silicon substrate located between gate trenches which are arranged with a predetermined pitch. This structure increases a carrier density at a portion near an emitter, and improves characteristic of an IGBT of a gate trench type having a high breakdown voltage.
摘要翻译：在具有高击穿电压的半导体器件中，绝缘层被掩埋在位于以预定间距排列的栅极沟槽之间的n31硅衬底的区域。该结构增加了发射极附近部分的载流子密度，提高了具有高击穿电压的栅沟槽型IGBT的特性。

18. 发明授权

US4900083A Modular vehicle body and method of building same 失效
标题翻译：模块化车身及其搭建方法
公开(公告)号：US4900083A
公开(公告)日：1990-02-13
申请号：US171813
申请日：1988-03-22
申请人： Hideyuki Kumasaka , Tarou Haiwara , Katsumi Nakamura , Kenichi Miyazaki , Hiroshi Kuriyama , Kouji Takao , Keizo Inoue
发明人： Hideyuki Kumasaka , Tarou Haiwara , Katsumi Nakamura , Kenichi Miyazaki , Hiroshi Kuriyama , Kouji Takao , Keizo Inoue
IPC分类号： B62D23/00 , B62D27/06 , B62D31/02 , B62D65/04
CPC分类号： B62D65/04 , B62D23/00 , B62D27/065 , Y10T29/49904
摘要： A vehicle body consists of six independent body sections, i.e., an engine compartment assembly, floor assembly, rear end assembly, a pair of body side assemblies and roof assembly. The assemblies are prepared and painted independently and then respectively provided with equipment such as an engine, suspensions, upholsteries, etc. so as to constitute an engine compartment module, floor module, rear end module, body side modules and roof module, respectively. A complete vehicle or nearly complete vehicle is obtained by joining the modules together with bolts and nuts.
摘要翻译：车身由六个独立的主体部分组成，即发动机舱组件，地板组件，后端组件，一对车身侧组件和车顶组件。各组件的制备和独立涂装，分别设置有发动机，悬架，升降器等设备，以分别构成发动机舱模块，地板模块，后端模块，车身侧模块和车顶模块。通过将模块与螺栓和螺母连接在一起可获得完整的车辆或几乎完整的车辆。

19. 发明授权

US09035434B2 Semiconductor device having first and second portions with opposite conductivity type which contact an electrode 有权
标题翻译：具有与电极接触的具有相反导电类型的第一和第二部分的半导体器件
公开(公告)号：US09035434B2
公开(公告)日：2015-05-19
申请号：US12716427
申请日：2010-03-03
申请人： Katsumi Nakamura
发明人： Katsumi Nakamura
IPC分类号： H01L21/02 , H01L29/02 , H01L29/861 , H01L29/08 , H01L29/739
CPC分类号： H01L29/861 , H01L29/0834 , H01L29/36 , H01L29/7397 , H01L29/8618
摘要： A semiconductor device having first and second portions with opposite conductivity types. There are first through fourth layers in the semiconductor device. A peak value of the impurity concentration of the fourth layer is higher than the peak value of the impurity concentration of the second layer and lower than the peak value of the impurity concentration of a first portion of the third layer. The fourth layer includes a third portion located on the first portion and a fourth portion which is located on the second portion. The semiconductor device allows a decrease in the forward voltage drop and also allows an improvement of the safe operating area tolerance. Thus, it is possible to decrease the forward voltage drop, improve the maximum reverse voltage, and suppress oscillations at the time of recovery.
摘要翻译：一种具有相反导电类型的第一和第二部分的半导体器件。在半导体器件中有第一到第四层。第四层的杂质浓度的峰值高于第二层的杂质浓度的峰值，并且低于第三层的第一部分的杂质浓度的峰值。第四层包括位于第一部分上的第三部分和位于第二部分上的第四部分。半导体器件允许正向压降的降低，并且还允许提高安全工作面积容差。因此，可以减小正向压降，提高最大反向电压，并抑制恢复时的振荡。

20. 发明授权

US08469336B2 Valve assembly 有权
标题翻译：阀组件
公开(公告)号：US08469336B2
公开(公告)日：2013-06-25
申请号：US12734116
申请日：2008-10-01
申请人： Katsumi Nakamura , Shingo Iguchi
发明人： Katsumi Nakamura , Shingo Iguchi
IPC分类号： F16K31/44 , F16K1/22
CPC分类号： F02D9/106 , F02M26/35 , F02M26/70 , F02M26/73 , F16K1/2268 , Y10T137/794
摘要： A valve assembly in which, even if a housing corrodes, application of a radially inward compression force to a heat-resistant filter can be suppressed. The valve assembly includes the housing having a gas path and a valve shaft hole, a valve having a valve shaft movably inserted in the valve shaft hole and also having a valve element connected to the valve shaft, and tubular heat-resistant filters installed between the inner peripheral surface of the valve shaft hole and the outer peripheral surface of the valve shaft and capturing dust in exhaust gas. The housing is made of cast iron. The valve assembly further has reinforcement collars installed between the inner peripheral surface of the valve shaft hole and the outer peripheral surfaces of the heat-resistant filters. The reinforcement collars have higher rigidity than the heat-resistant filters. At least the surfaces of the reinforcement collars are made of a high corrosion resistant material having higher corrosion resistance than the cast iron.
摘要翻译：一种阀组件，其中即使外壳腐蚀，也可以抑制向耐热过滤器施加径向向内的压缩力。阀组件包括具有气体通道的壳体和阀轴孔，阀具有可移动地插入阀轴孔中并且还具有连接到阀轴的阀元件的阀轴和安装在阀轴孔之间的管状耐热过滤器阀轴孔的内周面和阀轴的外周面，并捕获废气中的灰尘。外壳由铸铁制成。阀组件还具有安装在阀轴孔的内周面与耐热过滤器的外周面之间的加强套环。加强套环具有比耐热过滤器更高的刚性。至少加强套圈的表面由具有比铸铁更高的耐腐蚀性的高耐腐蚀材料制成。

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