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11. 发明申请

US20110269312A1 CHEMICAL MECHANICAL POLISHING (CMP) POLISHING SOLUTION WITH ENHANCED PERFORMANCE 有权
标题翻译：具有增强性能的化学机械抛光（CMP）抛光溶液
公开(公告)号：US20110269312A1
公开(公告)日：2011-11-03
申请号：US13122496
申请日：2009-09-29
申请人： Yuzhuo Li , Harvey Wayne Pinder , Shyam S. Venkataraman
发明人： Yuzhuo Li , Harvey Wayne Pinder , Shyam S. Venkataraman
IPC分类号： H01L21/306 , H01L21/304 , C09K13/00
CPC分类号： C09K3/1463 , C09G1/02
摘要： This invention relates to a chemical composition for chemical mechanical polishing (CMP) of substrates that are widely used in the semiconductor industry. The inventive chemical composition contains additives that are capable of improving consistency of the polishing performance and extending the lifetime of a polishing pad.
摘要翻译：本发明涉及广泛应用于半导体工业的基板的化学机械抛光（CMP）化学组合物。本发明的化学组合物包含能够提高抛光性能的一致性并延长抛光垫的寿命的添加剂。

12. 发明申请

US20130273739A1 AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES HAVING PATTERNED OR UNPATTERNED LOW-K DIELECTRIC LAYERS 有权
标题翻译：水性抛光组合物和具有图形或未加工的低K介电层的化学机械抛光底材的工艺
公开(公告)号：US20130273739A1
公开(公告)日：2013-10-17
申请号：US13878361
申请日：2011-10-04
申请人： Vijay Immanuel Raman , Frank Rittig , Yuzhuo Li , Wei Lan William Chiu
发明人： Vijay Immanuel Raman , Frank Rittig , Yuzhuo Li , Wei Lan William Chiu
IPC分类号： H01L21/306
CPC分类号： H01L21/30625 , C09G1/02 , C09G1/04 , G09G1/02 , H01L21/31053 , H01L21/3212 , H01L21/7684
摘要： An aqueous polishing composition comprising (A) abrasive particles and (B) an amphiphilic nonionic surfactant selected from the group consisting of water-soluble or water-dispersible surfactants having (b1) hydrophobic groups selected from the group consisting of branched alkyl groups having 10 to 18 carbon atoms; and (b2) hydrophilic groups selected from the group consisting of polyoxyalkylene groups comprising (b21) oxyethylene monomer units and (b22) substituted oxyalkylene monomer units wherein the substituents are selected from the group consisting of alkyl, cycloalkyl, or aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups, the said polyoxyalkylene group containing the monomer units (b21) and (b22) in random, alternating, gradient and/or blocklike distribution; a CMP process for substrates having patterned or unpatterned low-k or ultra-low-k dielectric layers making use of the said aqueous polishing composition; and the use of the said aqueous polishing composition for manufacturing electrical, mechanical and optical devices.
摘要翻译：一种水性抛光组合物，其包含（A）研磨颗粒和（B）选自水溶性或水分散性表面活性剂的两亲性非离子表面活性剂，所述水性或水分散性表面活性剂具有（b1）疏水基团，所述支链烷基选自具有10〜 18个碳原子; 和（b2）选自包含（b21）氧化乙烯单体单元和（b22）取代的氧化烯单体单元的聚氧化烯基的亲水基团，其中取代基选自烷基，环烷基或芳基，烷基 - 环烷基，烷基 - 芳基，环烷基 - 芳基和烷基 - 环烷基 - 芳基，所述含有单体单元（b21）和（b22）的聚氧化烯基以随机，交替，梯度和/或嵌段分布形式存在; 用于使用所述水性抛光组合物的具有图案化或未图案化的低k或超低k电介质层的衬底的CMP工艺; 以及使用所述水性抛光组合物制造电气，机械和光学装置。

13. 发明申请

US20150159050A1 CHEMICAL MECHANICAL POLISHING COMPOSITION COMPRISING POLYVINYL PHOSPHONIC ACID AND ITS DERIVATIVES 有权
标题翻译：包含聚乙烯磷酸及其衍生物的化学机械抛光组合物
公开(公告)号：US20150159050A1
公开(公告)日：2015-06-11
申请号：US14362510
申请日：2011-12-21
申请人： Vijay Immanuel Raman , Christian Schade , Shyam Sundar Venkataraman , Eason Yu-Shen Su , Sheik Ansar Usman Ibrahim
发明人： Vijay Immanuel Raman , Yuzhuo Li , Christian Schade , Shyam Sundar Venkataraman , Eason Yu-Shen Su , Sheik Ansar Usman Ibrahim
IPC分类号： C09G1/04 , H01L21/306
CPC分类号： C09G1/04 , C09G1/00 , C09G1/02 , C09K3/1463 , C09K13/00 , H01L21/302 , H01L21/30625 , H01L21/31053 , H01L21/461
摘要： A chemical mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of an organic polymeric compound as a dispersing agent or charge reversal agent comprising a phosphonate (P(═O)(OR1)(0R2) or phosphonic acid (P(═O)(OH)2) moiety or their deprotonated forms as pendant groups, wherein R1 is alkyl, aryl, alkylaryl, or arylalkyl, R2 is H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.
摘要翻译：一种化学机械抛光（CMP）组合物，其包含：（A）无机颗粒，有机颗粒或其混合物或复合物，（B）至少一种作为分散剂的有机聚合物或电荷反转剂，其包含膦酸盐 P（ΟO）（OR1）（OR2）或膦酸（P（ΟO）（OH）2）部分或其去质子化形式作为侧基，其中R 1是烷基，芳基，烷基芳基或芳基烷基，烷基，芳基，烷基芳基或芳烷基，和（C）水性介质。

14. 发明申请

US20080090500A1 PROCESS FOR REDUCING DISHING AND EROSION DURING CHEMICAL MECHANICAL PLANARIZATION 审中-公开
标题翻译：在化学机械平面化中减少破碎和腐蚀的方法
公开(公告)号：US20080090500A1
公开(公告)日：2008-04-17
申请号：US11735513
申请日：2007-04-16
申请人： Stuart Hellring , Yuzhuo Li , Robert Auger
发明人： Stuart Hellring , Yuzhuo Li , Robert Auger
IPC分类号： B24B29/02
CPC分类号： H01L21/02074 , C09G1/02 , H01L21/3212
摘要： This invention is directed to a slurry system and process of metal removal from a substrate. This invention is useful for polishing a microelectronic device. This invention is especially useful for chemical mechanical planarization of a semiconductor wafer for removal of an overburden thereof. The slurry system of the present invention includes a first slurry and a second slurry, wherein the first slurry has a higher abrasive concentration than the second slurry. The process of the present invention includes a first polish with the first slurry to partially remove metal from the substrate, and a second polish with the second slurry to further remove metal from the substrate.
摘要翻译：本发明涉及一种从衬底去除金属的浆料系统和方法。本发明对于抛光微电子器件是有用的。本发明对于用于去除其上覆层的半导体晶片的化学机械平面化是特别有用的。本发明的浆液系统包括第一浆料和第二浆料，其中第一浆料具有比第二浆料更高的研磨剂浓度。本发明的方法包括第一抛光剂，其具有第一浆料以从基底部分地去除金属，以及第二抛光剂，其具有第二浆料以从基底进一步除去金属。

15. 发明授权

US07279119B2 Silica and silica-based slurry 失效
标题翻译：二氧化硅和二氧化硅基浆料
公开(公告)号：US07279119B2
公开(公告)日：2007-10-09
申请号：US10627776
申请日：2003-07-28
申请人： Stuart D. Hellring , Colin P. McCann , Suryadevara V. Babu , Yuzhuo Li , Satish Narayanan , Robert L. Auger
发明人： Stuart D. Hellring , Colin P. McCann , Suryadevara V. Babu , Yuzhuo Li , Satish Narayanan , Robert L. Auger
IPC分类号： H01I21/302 , C09K5/00
CPC分类号： H01L21/3212 , B82Y30/00 , C01B33/18 , C01B33/193 , C01P2004/50 , C01P2004/51 , C01P2004/62 , C01P2004/64 , C01P2006/12 , C01P2006/19 , C01P2006/90 , C09G1/02 , C09K3/1409 , C09K3/1436 , C09K3/1463 , C23F3/00 , H01L21/30625 , H01L21/31053
摘要： This invention relates to a silica, a slurry composition, and a method of their preparation. In particular, the silica of the present invention includes aggregated primary particles. The slurry composition which incorporates the silica, is suitable for polishing articles and especially useful for chemical-mechanical planarization of semiconductor substrates and other microelectronic substrates.
摘要翻译：本发明涉及二氧化硅，浆料组合物及其制备方法。特别地，本发明的二氧化硅包括聚集的一次粒子。掺入二氧化硅的浆料组合物适用于抛光制品，特别适用于半导体衬底和其他微电子衬底的化学机械平面化。

16. 发明授权

US06916428B2 Photo-chemical remediation of Cu-CMP waste 失效
公开(公告)号：US06916428B2
公开(公告)日：2005-07-12
申请号：US10678415
申请日：2003-10-03
申请人： Yuzhuo Li , Jason Keleher , Ning Gao
发明人： Yuzhuo Li , Jason Keleher , Ning Gao
IPC分类号： C02F1/30 , C02F1/32 , C02F1/68 , C02F1/70 , C02F1/72
CPC分类号： C02F1/32 , C02F1/30 , C02F1/683 , C02F1/705 , C02F1/725 , C02F2103/16 , C02F2103/346 , C02F2305/10 , Y02W10/37 , Y10S210/912
摘要： A photo-chemical remediation of Cu-CMP waste streams basically includes the following acts: adding photo-catalyst particles into waste streams containing copper ions and organic pollutants and exposing the waste streams to UV light or sunlight to make copper ions become deposited on surfaces of the photo-catalyst particles. Whereby, the copper ions are removed from the waste streams. Meanwhile, organic and inorganic pollutants are decomposed by the photolysis capability of the photo-catalyst to make the waste streams dischargable within environmental standards to the environment.

17. 发明授权

US06620215B2 Abrasive composition containing organic particles for chemical mechanical planarization 失效
公开(公告)号：US06620215B2
公开(公告)日：2003-09-16
申请号：US10023827
申请日：2001-12-21
申请人： Yuzhuo Li , Guomin Bian , Kwok Tang , Joe Zunzi Zhao , John Westbrook , Yong Lin , Leina Chan
发明人： Yuzhuo Li , Guomin Bian , Kwok Tang , Joe Zunzi Zhao , John Westbrook , Yong Lin , Leina Chan
IPC分类号： C09K314
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention is drawn to a composition comprising abrasive particles comprising an organic resin for chemical mechanical planarization (CMP), which can be widely used in the semiconductor industry. The abrasive composition is an aqueous slurry comprising abrasive particles comprising an organic resin, wherein the slurry is held at a pH in the range of 2-12. An attractive feature of the inventive abrasive composition is that it can be tailored to selectively remove different components from the surface. The inventive abrasive composition also provides efficient polishing rates and good surface quality when used in CMP applications.

18. 发明授权

US06508953B1 Slurry for chemical-mechanical polishing copper damascene structures 失效
标题翻译：用于化学机械抛光铜镶嵌结构的浆料
公开(公告)号：US06508953B1
公开(公告)日：2003-01-21
申请号：US09692729
申请日：2000-10-19
申请人： Yuzhuo Li , Jason Keleher
发明人： Yuzhuo Li , Jason Keleher
IPC分类号： C09K1300
CPC分类号： C09G1/02 , C23F3/00
摘要： The present invention provides a chemical-mechanical polishing slurry for use in removing copper overlaying a tantalum-based barrier layer during the fabrication of a copper damascene structure, and a method of retarding the corrosion of copper lines during the chemical-mechanical polishing of a copper damascene structure using the slurry. The slurry according to the invention includes an oxidizing agent that releases free radicals and a non-chelating free radical quencher that is effective to retard the corrosion of the copper lines during chemical-mechanical polishing. Preferred oxidizing agents that release free radicals used in the slurry according to the invention include peroxides, peroxydiphosphates, and persulfates. Preferred non-chelating free radical quenchers used in the slurry according to the invention include ascorbic acid, thiamine, 2-propanol, and alkyl glycols, with ascorbic acid being most preferred.
摘要翻译：本发明提供了一种用于在铜镶嵌结构的制造期间去除覆盖钽基阻挡层的铜的化学机械抛光浆料，以及在铜化学机械抛光期间延缓铜线腐蚀的方法大马士革结构使用浆料。根据本发明的浆料包括释放自由基的氧化剂和非化学自由基猝灭剂，其在化学机械抛光期间有效地延缓铜线的腐蚀。根据本发明的用于释放浆料中的自由基的优选氧化剂包括过氧化物，过氧二磷酸酯和过硫酸盐。用于根据本发明的浆料中的优选的非螯合自由基猝灭剂包括抗坏血酸，硫胺素，2-丙醇和烷基二醇，其中抗坏血酸是最优选的。

19. 发明授权

US09005472B2 Aqueous polishing agent and graft copolymers and their use in a process for polishing patterned and unstructured metal surfaces 有权
标题翻译：水性抛光剂和接枝共聚物及其在用于抛光图案和非结构化金属表面的方法中的用途
公开(公告)号：US09005472B2
公开(公告)日：2015-04-14
申请号：US13580039
申请日：2011-01-19
申请人： Vijay Immanuel Raman , Ilshat Gubaydullin , Mario Brands , Yuzhuo Li , Maxim Peretolchin
发明人： Vijay Immanuel Raman , Ilshat Gubaydullin , Mario Brands , Yuzhuo Li , Maxim Peretolchin
IPC分类号： H01L21/302 , H01L21/461 , C03C15/00 , C03C25/68 , C09K13/00 , C09K13/04 , C09K13/08 , C09K13/06 , C09G1/02 , C09K3/14 , C08F283/00
CPC分类号： C09G1/02 , C08F283/00 , C09K3/1463 , C08F220/32
摘要： An aqueous polishing agent, comprising, as the abrasive, at least one kind of polymer particles (A) finely dispersed in the aqueous phase and having at their surface a plurality of at least one kind of functional groups (a1) capable of interacting with the metals and/or the metal oxides on top of the surfaces to be polished and forming complexes with the said metals and metal cations, the said polymer particles (A) being preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomer or polymer containing a plurality of functional groups (a1); graft copolymers preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomeric or polymeric aminotriazine-polyamine condensate; and a process for the chemical and mechanical polishing of patterned and unstructured metal surfaces making use of the said aqueous polishing agent.
摘要翻译：一种水性抛光剂，其包含作为研磨剂的至少一种聚合物颗粒（A），其细分散在水相中并且在其表面具有多种至少一种能够与其相互作用的官能团（a1）金属和/或金属氧化物在要抛光的表面上并与所述金属和金属阳离子形成复合物，所述聚合物颗粒（A）可通过至少一种含至少一种的单体的乳液或悬浮聚合制备在含有多个官能团（a1）的至少一种低聚物或聚合物的存在下，可自由基聚合的双键; 在至少一种低聚或聚合氨基三嗪 - 聚胺缩合物存在下，通过至少一种含有至少一个可自由基聚合的双键的单体的乳液或悬浮聚合制备的接枝共聚物; 以及利用所述水性抛光剂对图案化和非结构化金属表面进行化学和机械抛光的方法。

20. 发明申请

US20130344696A1 METHOD FOR FORMING THROUGH-BASE WAFER VIAS 有权
标题翻译：通过基底波浪形成的方法
公开(公告)号：US20130344696A1
公开(公告)日：2013-12-26
申请号：US14004585
申请日：2012-02-28
申请人： Yuzhuo Li , Changxue Wang , Daniel Kwo-Hung Shen
发明人： Yuzhuo Li , Changxue Wang , Daniel Kwo-Hung Shen
IPC分类号： H01L21/306
CPC分类号： H01L21/30625 , C09G1/02 , H01L21/31053 , H01L21/3212 , H01L21/76898
摘要： Method for manufacturing semiconductor wafers having at least one through-base wafer via, the said method comprising the steps of (1) providing a semiconductor wafer having at least one electrically conductive via comprising an electrically conductive metal and extending from the front side of the semiconductor wafer at least partially through the semiconductor wafer; (2) affixing the frontside of the semiconductor wafer to a carrier; (3) contacting the backside of the semiconductor wafer with a polishing pad and an aqueous chemical mechanical polishing composition having a pH of equal to or greater than 9 and comprising (A) abrasive particles; (B) an oxidizing agent containing at least one peroxide group; and (C) an additive acting both as metal chelating agent and metal corrosion inhibitor; (4) chemically mechanically polishing the backside of the semiconductor wafer until at least one electrically conductive via is exposed. Preferably, the additive (C) is 1,2,3-triazole.
摘要翻译：一种用于制造具有至少一个贯通基底晶片通孔的半导体晶片的方法，所述方法包括以下步骤：（1）提供具有至少一个导电通孔的半导体晶片，所述导电通孔包括导电金属并从半导体的前侧延伸晶片至少部分地穿过半导体晶片; （2）将半导体晶片的前端固定在载体上; （3）使半导体晶片的背面与抛光垫和pH等于或大于9的含水化学机械抛光组合物接触，并包含（A）磨料颗粒; （B）含有至少一种过氧化物基团的氧化剂; 和（C）作为金属螯合剂和金属缓蚀剂的添加剂; （4）对半导体晶片的背面进行化学机械抛光直至至少一个导电通孔露出。优选地，添加剂（C）是1,2,3-三唑。

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